Conditions | Yield |
---|---|
In melt 5 mol% excess of gaseous chlorine passed through metal gallium melt; | 99% |
excess Cl2;; | |
mixt. heating (two-section glass tube, 200-250°C); vac. sublimation (water pump, ca. 250°C); |
gallium hydrogen dichloride
1,2,4,5-tetrakis((trimethylsilyl)ethynyl)benzene
A
C6H2((CHC(Si(CH3)3))2GaCl(O(C2H5)2))2
B
Gallium trichloride
Conditions | Yield |
---|---|
In hexane under Ar; soln. of HGaCl2 in n-hexane treated with soln. of (Me3SiC2)4C6H2 in n-hexane at room temp.; heated under reflux for 14 h; filtered; ppt. washed with n-hexane; treated with Et2O; filtered; filtrate concd.; cooled to -45°C; elem. anal.; | A 46% B n/a |
Conditions | Yield |
---|---|
In neat (no solvent) heating up to 250 °C;; | |
In neat (no solvent) heating up to 250 °C;; |
Conditions | Yield |
---|---|
In neat (no solvent) 200°C;; | |
In neat (no solvent) 200°C;; |
tetrachlorosilane
A
Gallium trichloride
B
silica gel
Conditions | Yield |
---|---|
300-350°C in vac.; Two-fold vacuum sublimation with prior distilling off SiCl4.; |
Conditions | Yield |
---|---|
In neat (no solvent, solid phase) byproducts: Ag; oven (cf. Grabandt, de Lange, Mooyman, Chem. Phys. Lett. 160 (1989) 359) filled with a mixt. of gallium metal and AgCl, oven temp. between 700 to 900°C, inner ionization chamber kept at low temp.; not isolated, detected by photoelectron spectra; |
Conditions | Yield |
---|---|
With Cl2 Kinetics; GaAs wafer, 25-150°C, pressure from 0.09 to 20 Torr of Cl2; |
trimethyl gallium
A
Gallium trichloride
B
dimethylchlorogallane
C
methylgallium dichloride
Conditions | Yield |
---|---|
With HCl In neat (no solvent, gas phase) | |
With HCl In diethyl ether |
gallium
Gallium trichloride
Conditions | Yield |
---|---|
With chlorine In neat (no solvent) Ar atmosphere; chlorination by 120°C; distn. (flow of chloridine), resublimation (flow of Ar); | |
With Cl2 200-250°C; | |
With Cl2 chlorination; sublimation; |
Conditions | Yield |
---|---|
gentle heating;; | |
In neat (no solvent) Ga metal was dissolved in concd. HCl; |
Conditions | Yield |
---|---|
In neat (no solvent) heating of Ga in a stream of dry HCl at 200 - 400 °C;; distillation at 200 - 400 °C;; | |
In neat (no solvent) heating of Ga in a stream of dry HCl at 200 - 400 °C;; distillation at 200 - 400 °C;; | |
In neat (no solvent) moderate heating of Ga in a stream of dry HCl;; excess of HCl is removed by distillation in CO2 stream (traces of brown-yellow residue are formed);; |
Conditions | Yield |
---|---|
In gaseous matrix co-deposition of Ga (heated from molybdenum or graphite cell to 1150 °C) and a Cl2/Ar mixt. (1:100 - 1:200) on to a polished Cu surface at 14-17 K;; IR; |
Gallium trichloride
Conditions | Yield |
---|---|
In neat (no solvent) dissociation observable above 273 °C;; vapor density measurements;; | |
In neat (no solvent) complete dissociation above 440 °C;; vapor density measurements;; | > 99 |
In gaseous matrix heating in Ar-flow (5-10 mmol/h, up to 900 K); condensing at 12 K; vibration spectroscopy; |
Conditions | Yield |
---|---|
complex dissociation in temp. range 100-500°C; tensimetric equilibrium monitoring; |
gallium
silver(I) chloride
A
gallium chloride
B
Gallium trichloride
Conditions | Yield |
---|---|
In neat (no solvent, solid phase) byproducts: Ag; oven (cf. Grabandt, de Lange, Mooyman, Chem. Phys. Lett. 160 (1989) 359) filled with a mixt. of gallium metal and AgF, comparatively high temps.; not isolated, detected by photoelectron spectra; |
Conditions | Yield |
---|---|
In neat (no solvent) |
Conditions | Yield |
---|---|
In neat (no solvent, solid phase) mixt. of the starting materials heated in evacuated sealed quartz tubes to 500-900°C; decompn. of educts ocurrs, GaCl3 sublimates off; | A 0% B n/a |
Conditions | Yield |
---|---|
In neat (no solvent) mixt. of the starting materials heated in evacuated sealed quartz tubes to 500-900°C; decompn. of educts ocurrs, GaCl3 sublimates off; | A 0% B n/a |
Conditions | Yield |
---|---|
In neat (no solvent) mixt. of the starting materials heated in evacuated sealed quartz tubes to 500-900°C; decompn. of educts ocurrs, GaCl3 sublimates off; | A 0% B n/a |
Conditions | Yield |
---|---|
With water In water Kinetics; calorimetric monitoring; |
Conditions | Yield |
---|---|
In neat (no solvent) decompn. during sublimation;; | |
In neat (no solvent) decompn. during sublimation;; |
D
Gallium trichloride
Conditions | Yield |
---|---|
In neat (no solvent, gas phase) heating to 445 K; identification by mass spectroscopy and electron diffraction; |
Gallium trichloride
Conditions | Yield |
---|---|
With chlorine Kinetics; byproducts: O2; 400-850°C; reaction products identified by X-ray diffraction and chem. anal.; |
Conditions | Yield |
---|---|
With sulfur dioxide In neat (no solvent) Kinetics; byproducts: O2; temps. above 500°C; reaction products identified by X-ray diffraction and chem. anal.; |
Conditions | Yield |
---|---|
In neat (no solvent) Kinetics; byproducts: O2; 400-850°C; reaction products identified by X-ray diffraction and chem. anal.; |
gallane
Gallium trichloride
Conditions | Yield |
---|---|
With hydrogenchloride byproducts: H2; at -95°C, excess of anhydrous HCl; | >99 |
hydrogen sulfide
Gallium trichloride
gallium trichloride*hydrogen sulfide
Conditions | Yield |
---|---|
In dichloromethane under N2, H2S introduced in soln. of GaCl3 in CH2Cl2 at -78°C for 15 min, further stirred for 1h at -78°C; evapn. of solvent at -20°C, dried in vac. for 3h at -20°C, elem. anal.; | 100% |
Gallium trichloride
ethanethiol
trichlorogallium * ethanethiol
Conditions | Yield |
---|---|
In benzene slow addn. of ethanethiol to a suspn. of an equimolar amt. of GaCl3 in benzene; mixt. stirred for 1 h at room temp.; solvent distd. off in vac. at 60°C; elem. anal.; | 100% |
In benzene under N2, dropwise addn. of thiol soln. to a suspension of GaCl3 in benzene, dissoln.of GaCl3, stirred for 15 min at room temp.; evapn. of solvent, dried in vac. at room temp. for 3h, elem. anal.; | 100% |
Conditions | Yield |
---|---|
In benzene under N2, dropwise addn. of thiol soln. to a suspension of GaCl3 in benzene, dissoln. of GaCl3, stirred for 15 min at room temp.; evapn. of solvent, dried in vac. at room temp. for 3h, elem. anal.; | 100% |
Conditions | Yield |
---|---|
In benzene under N2, dropwise addn. of thiol soln. to a suspension of GaCl3 in benzene, dissoln.of GaCl3, stirred for 15 min at room temp.; evapn. of solvent, dried in vac. at room temp. for 3h, elem. anal.; | 100% |
methyl methylphenylphosphinate
Gallium trichloride
Conditions | Yield |
---|---|
In further solvent(s) byproducts: MeCl; slow heating in neat Ph(Me)P(O)OMe until complete pptn.; particle size and polymerization degree depending on heating rate; | 100% |
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: Me3SiCl; (inert atm.); stirring (room temp. 6 h, 60°C 60 h, 75°C 4 h); byprod. and educt excess removal (vac.), washing (hexane), drying (vac.); | 100% |
Gallium trichloride
Conditions | Yield |
---|---|
In not given mixting GaCl3 and benzyl protected D-1,2-hopobactin; after reaction was complete, pH was adjusted to 8; chromy.; | 99% |
Gallium trichloride
Conditions | Yield |
---|---|
In not given mixting GaCl3 and benzyl protected L-1,2-hopobactin; after reaction was complete, pH was adjusted to 8; chromy.; | 99% |
Conditions | Yield |
---|---|
In toluene uner Ar; stoich. amts. of compounds stirred at 20°C for 48 h in toluene; solvent evapd. in vac.; | 99% |
Conditions | Yield |
---|---|
In diethyl ether; hexane byproducts: Me3SiCl; N2-atmosphere; dropwise addn. of stoic. mixt. of metal salts (in ether) to Me3SiCN (in hexane), stirring for 12 h; collection (filtration), heating in hexane (several h), washing (hexane); | 99% |
Al(3+)*C33H48N2O2(2-)*Cl(1-)=Al(C33H48N2O2)Cl
Gallium trichloride
Conditions | Yield |
---|---|
In dichloromethane stirring (25°C, 6 h); solvent removal (vac.), hexanes addn., cooling (-30°C, 1 d, crystn.), filtration, drying (vac.); elem. anal.; | 99% |
Gallium trichloride
tetraphenyl phosphonium chloride
chromium(0) hexacarbonyl
Conditions | Yield |
---|---|
With C8K In tetrahydrofuran byproducts: KCl, graphite; inert atmosphere; treatment of Cr(CO)6 with C8K, addn. of 1 equiv. GaCl3at -78°C (stirring), warming to room temp., standing for 3.5 h, addn. of slight excess PPNCl, standing for 1 h; filtration, washing of residue (THF), solvent removal (vac.), washing (Et2O); elem. anal.; | 99% |
ethanol
Gallium trichloride
(μ5-oxo)pentachloroocta(μ-ethoxide)pentagallium
Conditions | Yield |
---|---|
With sodium In ethanol byproducts: HCl, NaCl; N2, Na dissolved at room temp., GaCl3 added, refluxed for 5-6 h, left overnight; ppt. removed, solvents evapd. to drynss (vac.), suspd. (toluene), ppt. treated with CH3CN/toluene, soln. stored for 5 mn; elem. anal.; | 99% |
Conditions | Yield |
---|---|
In neat (no solvent, solid phase) (Ar); solid state reaction; equimolar mixt. of TlCl, and GaCl3 sealed under vac. in glass ampoules; heated with 10°C/h to 150°C for 48 h; cooled to 25°C with 2.degre.C/h; detn. by XRD; | 99% |
Gallium trichloride
Conditions | Yield |
---|---|
In methanol addn. of Zn compd. in MeOH to GaCl3, heating under reflux for 2 h or stirring overnight; | 99% |
In methanol addn. of Zn compd. in MeOH to GaCl3, heating under reflux for 6 h (or 2 h) or stirring overnight; isolation as mixture of symmetric and asymmetric isomers; cooling to room temp., filtration, washing with Et2O, drying under vacuum, elem. anal.; | 54% |
Gallium trichloride
Conditions | Yield |
---|---|
In methanol addn. of Zn compd. in MeOH to GaCl3, heating under reflux for 2 h or stirring overnight; | 99% |
In methanol addn. of Zn compd. in MeOH to GaCl3, heating under reflux for 6 h; isolation as symmetric and asymmetric isomers (1.3:1); cooling to room temp., filtration, washing with Et2O, drying under vacuum, elem. anal.; | 36% |
Conditions | Yield |
---|---|
In benzene under Ar and N2; at room temp.; elem. anal.; | 99% |
Gallium trichloride
acetonitrile
Conditions | Yield |
---|---|
In acetonitrile byproducts: KCl; CH3CN added to metal complex, sealed in a glass ampule, kept at 100°C for 3-4 d, filtered (Ar), treated with excess of GaCl3, sealed, heated at 100°C for 12 h; evapd. slowly; | 99% |
Gallium trichloride
Conditions | Yield |
---|---|
In tetrahydrofuran byproducts: LiCl; slow addn. of GaCl3 to 64% excess of freshly ground LiH (during 4 h, 5-10°C), stirring for 2 h; filtration, evapn. of filtrate, dissoln. in ether, evapn., dissoln. in THF; | 98% |
In tetrahydrofuran byproducts: LiCl; slow addn. of GaCl3 to 25% excess of freshly ground LiH, stirring for 1-2 h (total reaction time 4.5 h; 5-10°C); evapn., dissoln. in ether; | 96% |
In diethyl ether byproducts: LiCl; slow addn. of GaCl3 to 73% excess of freshly ground LiH (over 1 h, 8-10°C), stirring for 1.5 h; | 96% |
Conditions | Yield |
---|---|
In tetrahydrofuran byproducts: LiCl; Li-compd. grinding in solvent, excess suspn. treating with Ga-salt soln.(three-necked flask, 5-10°C, 4 h, stirring), further stirring fo r 2 h, soln. filtration, evapn. to paste, treatment with ether (LiCl removal); sol. evapn., ppt. dissoln. in THF; | 98% |
In diethyl ether byproducts: LiCl; Ga-salt soln. addn. to excess Li-compd. suspn. (three-necked flask, 8-10°C, 1 h, stirring), further stirring for 1.5 h, soln. filtration,evapn. to paste, treatment with ether (LiCl removal); Ga-complex isolation according to: L. I. Zakharkin, V. V. Gavrilenko, Yu. N. Karaksin, Zhur. Obshch. Khim. 41 (1973) 2689; | 96% |
Gallium trichloride
A
dihydro-bis(1-pyrazolyl)borate acid
B
(acetato)bis{dihydrobis(1-pyrazolyl)borato}gallium(III)
Conditions | Yield |
---|---|
With NaO2CCH3 In tetrahydrofuran N2-atmosphere; mixing of borate and AcONa, addn. to GaCl3 soln. (-78°C), stirring and warming to room temp. during 8 h; evapn. (vac.), extn. (benzene), filtration, evapn. (vac.), recrystn. (benzene/hexane, 0°C); elem. anal.; | A n/a B 98% |
Reported in EPA TSCA Inventory. EPA Extremely Hazardous Substances List.
The Gallium trichloride with CAS registry number of 13450-90-3 is also known as Gallium trichloride. The IUPAC name and product name are the same. It belongs to product categories of Inorganics; Crystal Grade Inorganics; Catalysis and Inorganic Chemistry; Chemical Synthesis; Gallium Salts; GalliumMetal and Ceramic Science; Salts. Its EINECS registry number is 236-610-0. In addition, the formula is GaCl3 and the molecular weight is 176.08. This chemical is a white crystals or powder and should be sealed in a ventilated, cool and dry place at room temperature. What's more, it is used as organic catalyst.
Physical properties about Gallium trichloride are:
(1)Exact Mass: 173.832139; (2)MonoIsotopic Mass: 173.832139; (3)Heavy Atom Count: 4; (4)Complexity: 8; (5)Covalently-Bonded Unit Count: 1;(6)#H bond acceptors: 0; (7)#H bond donors: 0; (8)#Freely Rotating Bonds: 0.
Preparation of Gallium trichloride:
It is prepared by reaction of gallium oxide with thionyl chloride. Firstly, the reaction mixture is heated to 200 °C until gallium oxide is chlorinated completely. Then the reaction mixture is cooled to -10 °C and distilled to remove the excess thionyl chloride. At last, product is refined by distillating at 220 °C.
Safety information of Gallium trichloride:
When you are using this chemical, please be cautious about it. As a chemical, it is extremely flammable and causes burns. It reacts violently with water and it is toxic to aquatic organisms that may cause long-term adverse effects in the aquatic environment. During using it, wear suitable protective clothing, gloves and eye/face protection. Keep away from sources of ignition and avoid release to the environment. After contact with skin, take off immediately all contaminated clothing, and wash immediately. In case of contact with eyes, rinse immediately with plenty of water and seek medical advice. If accident happens or you feel unwell seek medical advice immediately. What's more, do not empty into drains and take precautionary measures against static discharges.
You can still convert the following datas into molecular structure:
(1)SMILES:Cl[Ga](Cl)Cl;
(2)Std. InChI:InChI=1S/3ClH.Ga/h3*1H;/q;;;+3/p-3;
(3)Std. InChIKey:UPWPDUACHOATKO-UHFFFAOYSA-K;
The toxicity data of Gallium trichloride is as follows:
Organism | Test Type | Route | Reported Dose (Normalized Dose) | Effect | Source |
---|---|---|---|---|---|
dog | LD50 | intravenous | 41mg/kg (41mg/kg) | Environmental Quality and Safety, Supplement. Vol. 1, Pg. 1, 1975. | |
mouse | LD50 | intraperitoneal | 36975ug/kg (36.975mg/kg) | Comptes Rendus Hebdomadaires des Seances, Academie des Sciences. Vol. 256, Pg. 1043, 1963. | |
rabbit | LD50 | intravenous | 43mg/kg (43mg/kg) | Environmental Quality and Safety, Supplement. Vol. 1, Pg. 1, 1975. | |
rabbit | LD50 | subcutaneous | 245mg/kg (245mg/kg) | Environmental Quality and Safety, Supplement. Vol. 1, Pg. 1, 1975. | |
rat | LCLo | inhalation | 316mg/m3/3H (316mg/m3) | Journal of Pharmacology and Experimental Therapeutics. Vol. 95, Pg. 487, 1949. | |
rat | LD50 | intravenous | 47mg/kg (47mg/kg) | Environmental Quality and Safety, Supplement. Vol. 1, Pg. 1, 1975. | |
rat | LD50 | parenteral | 1408mg/kg (1408mg/kg) | AJR, American Journal of Roentgenology. Vol. 142, Pg. 619, 1984. | |
rat | LD50 | subcutaneous | 306mg/kg (306mg/kg) | Environmental Quality and Safety, Supplement. Vol. 1, Pg. 1, 1975. |
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