Gallium supplier | CasNO.7440-55-3

Name
Gallium
EINECS 231-163-8
CAS No. 7440-55-3
Article Data119
CAS DataBase
Density 5.904 g/mL at 25 °C(lit.)
Solubility
Melting Point 29.8 °C(lit.)
Formula Ga
Boiling Point 2403 °C(lit.)
Molecular Weight 69.723
Flash Point
Transport Information UN 3264 8/PG 3
Appearance light grey solid
Safety 26-45-36/37/39-36-28-27
Risk Codes 36/38-34-23/24/25
Molecular Structure
Hazard Symbols C, Xi, T
Synonyms Galliumelement;
PSA 0.00000
LogP -0.04330

Synthetic route

: decamethylsilicocene

: 13450-90-3
Gallium trichloride

A: 7440-55-3
gallium

B: 856588-85-7, 15024-93-8
gallium trichloride-pyridine (1/1)

Conditions

Conditions	Yield
In toluene inert atmosphere; soln. of Si-compd. cooled to -80°C, addn. of GaCl3 (equiv. amt.) soln., warming to room temp., Gallium pptn. on standing (3-5 d), filtration of Ga, pptn. on pyridine addn. to filtrate; filtration;	A 98% B 87%

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: decamethylsilicocene

: 13450-88-9
gallium(III) bromide

A: 7440-55-3
gallium

B pyridine; compound with gallium bromide: pyridine; compound with gallium bromide

Conditions

Conditions	Yield
In toluene inert atmosphere; soln. of Si-compd. cooled to -80°C, addn. of GaBr3 (equiv. amt.) soln., warming to room temp., gallium pptn. on standing (3-5 d), filtration of Ga, pptn. on pyridine addn. to filtrate; filtration;	A 96% B 79%

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IMes*GaH3: 311311-59-8
IMes*GaH3

GaBr3(1,3-dimesitylimidazol-2-ylidene): GaBr3(1,3-dimesitylimidazol-2-ylidene)

A: 7440-55-3
gallium

B GaHBr2(1,3-bis(2,4,6-trimethylphenyl)imidazol-2-ylidene): 1159704-40-1
GaHBr2(1,3-bis(2,4,6-trimethylphenyl)imidazol-2-ylidene)

Conditions

Conditions	Yield
In toluene (under Ar, Schlenk); soln. of Ga-complex added dropwise to soln. of Ga-complex in toluene with stirring at room temp., heated to 50°C for36 h; filtered, volatiles removed in vacuo;	A n/a B 71%

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: gallium(III) trichloride

: 63991-26-4
ephedrine hydrochloride

A: 7440-55-3
gallium

B: [Ga(ephedrine)2(Cl)3]

Conditions

Conditions	Yield
With ammonium hydroxide In methanol for 3h; pH=8 - 9; Reflux;	A n/a B 66%

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: digallium tetrachloride

: 7440-55-3
gallium

Conditions

Conditions	Yield
With 2,3,5,6-tetramethyl-1,4-bis(trimethylsilyl)-1,4-diaza-2,5-cyclo-hexadiene In tetrahydrofuran at 20℃; for 15h; Inert atmosphere;	59%

: exo-Li(N,N,N',N'-tetramethylethylenediamine)-1-Li(N,N,N',N'-tetramethylethylenediamine)-2,3-(SiMe3)2-2,3-C2B4H4

: 13450-90-3
Gallium trichloride

A: 7440-55-3
gallium

B: 1-Cl-1-(N,N,N',N'-tetramethylethylenediamine)-2,3-(SiMe3)2-closo-1,2,3-GaC2B4H4

Conditions

Conditions	Yield
In benzene byproducts: LiCl; addn. of soln. of carborane to GaCl3 (C6H6, 0°C), stirring at room temp. overnight; filtration off of LiCl and Ga, concn.; elem. anal.;	A n/a B 51%

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: [((((Bu(t))NC(H))2)GaI)2]

: 181886-00-0
[LiAs(SiMe3)2*DME]

A: 7440-55-3
gallium

B: 124592-82-1
bis(1,4-di-t-butyl-1,4-diazabuta-1,3-diene)gallium

C [(((Bu(t))NC(H))2)Ga(As(SiMe3)2)I]: [(((Bu(t))NC(H))2)Ga(As(SiMe3)2)I]

Conditions

Conditions	Yield
In diethyl ether under Ar atm. to soln. Ga complex in Et2O LiAs(SiMe3)2*DME in Et2O (1:2)was added at -78°C over 5 min, soln. was warmed to room temp. an d stirred overnight; volatiles were emoved in vacuo, residue was extd. with hexane, filtered,concd., and cooled to -30°C overnight; elem. anal.;	A n/a B n/a C 33%

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lithium tetrahydridogallate: lithium tetrahydridogallate

: H2Ga(μ-Cl)2GaH2

A: 7440-55-3
gallium

B: Li(1+)*GaH3Cl(1-)=LiGaH3Cl

C: 13572-93-5
gallane

Conditions

Conditions	Yield
With octane byproducts: H2; at -30°C in vac. (<1E-4 mm Hg); Gallane condenses as a white solid, elem. anal.;	A n/a B n/a C 5%
With octane In solid byproducts: H2; at -30°C in vac. (<1E-4 mm Hg); Gallane condenses as a white solid, elem. anal.;	A n/a B n/a C 5%

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: 7732-18-5
water

: 13450-90-3
Gallium trichloride

A: 7440-55-3
gallium

: gallium oxide hydroxide

Conditions

Conditions	Yield
In water byproducts: H(1+); Sonication; Ar atmosphere (1.5 atm); 100 W/cm**2, 20-kHz, room temp., 90 min - 6 h; washing (H2O, 4 times), drying (vac.); detd. by powder X-ray diffraction;	A 1% B n/a

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: 325774-15-0
1,1,3,3-tetramethylgyanidine-gallane (1/1)

A: 7440-55-3
gallium

B: 1333-74-0
hydrogen

C: 80-70-6
N,N,N',N'-tetramethylguanidine

Conditions

Conditions	Yield
at 85 - 90℃; Thermodynamic data;

...Expand

: gallium(III) oxide

: 7440-55-3
gallium

Conditions

Conditions	Yield
With filter paper coal In neat (no solvent) annealing;
With hydrogen In neat (no solvent) in H2-stream at red heat;;
With filter paper coal In neat (no solvent) annealing;
With H2 In neat (no solvent) in H2-stream at red heat;;

: 19287-45-7
diborane

: 1445-79-0
trimethyl gallium

A: 7440-55-3
gallium

B methyl diborane: 23777-55-1
methyl diborane

C: 1333-74-0
hydrogen

Conditions

Conditions	Yield
at room temp. with excess of B2H6;
at room temp. with excess of B2H6;

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: gallium arsenide

A: 7440-55-3
gallium

B arsenic: 23878-46-8
arsenic

Conditions

Conditions	Yield
In solid at 580-650°C; UPS; Auger spect.;

: gallium arsenide

: 7440-55-3
gallium

Conditions

Conditions	Yield
In neat (no solvent) heated at 585 - 750 °C for 3 - 8 min under vac.;

: 1445-79-0
trimethyl gallium

: 7440-55-3
gallium

Conditions

Conditions	Yield
In gaseous matrix Kinetics; Irradiation (UV/VIS); photolysis at 403.3 nm; KrF laser; carrier gas H2, D2 or CH4; monitoring fluorescence at 417.2 nm;
In neat (no solvent) deposition of Ga droplets on heated Si substrate (480 °C) at moleflow of GaMe3 of 2.2E-5 mol/min for 30 s;
In neat (no solvent) thermal decompn. on heated Cu or GaAs surfaces; detn. by MPI/MS;

: 1445-79-0
trimethyl gallium

A: 7440-55-3
gallium

B: 99601-83-9
monomethyl gallium

C: 106693-86-1
dimethylgallium

Conditions

Conditions	Yield
In gas byproducts: CH3, C2H6; Irradiation (UV/VIS); laser photolysis;
In gas byproducts: C2H6, CH3; Irradiation (UV/VIS); photolysis (190-310 nm); studied by laser mass spectrometry and UV absorption spectrometry;

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: gallium(III)

: 7440-43-9
cadmium

: 7440-55-3
gallium

Conditions

Conditions	Yield
	0%

: gallium(III)

: 7440-66-6
zinc

: 7440-55-3
gallium

Conditions

Conditions	Yield
	0%

: gallium nitride

: 80937-33-3
oxygen

: 7440-21-3
silicon

A: gallium(III) oxide

B: 7440-55-3
gallium

C: 112926-00-8, 7631-86-9
silica gel

Conditions

Conditions	Yield
In neat (no solvent) High Pressure; under Ar flow; Si wafer placed on Al plate; Ga droplets (obtained from GaN at 1150°C) transferred by Ar contg. O2 (7.8 Torr partial pressure) and deposited onto Si wafer; heated at 1150°C (400 Torr) for5 h; detd. by scanning and transmission electron microscopy, and energy dispersive X-ray spectroscopy;	A n/a B 0% C 0%

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: 13450-90-3
Gallium trichloride

: 7440-55-3
gallium

Conditions

Conditions	Yield
With arsenic(III) trioxide In water Electrochem. Process; electrodeposition, pH 14 (silicon substrate, -2.99 V vs Ag/AgCl,lead substrate, -1.73 V vs Ag/AgCl ); X-ray diffraction, Auger electron spectroscopy;
With potassium hydroxide In potassium hydroxide Electrolysis;
With LiBH(CH2CH3)3 In tetrahydrofuran byproducts: LiCl; (Ar); addn. of dioctylether to THF soln. of Superhydride, stirring for 1.5 at 90°C in vac., addn. of gallium compd.; centrifugation, washing with THF, drying in vac. for 20 min;

gallium: gallium

: arsenic

: gallium arsenide

Conditions

Conditions	Yield
In neat (no solvent) Ga, As evacuated, closed in an outgassed quartz ampoule at .apprx.1E-4 Pa, heated at 580.+-.20°C, 140h;	100%
With iodine In neat (no solvent) stoichiometric amts. of Ga and As heated at 1000°C for 5 days at the presence of a small amts. of iodine; identified by X-ray diffraction;
In gas gas phase reaction of Ga and As vapour at 1E-10 Torr;

: 7440-55-3
gallium

: 7440-56-4
germanium

: 7440-36-0
antimony

Ge#dotGa#dotSb: Ge#dotGa#dotSb

Conditions

Conditions	Yield
In neat (no solvent) Ge, Ga and Sb placed in evacuated (1E-2 Pa), sealed quartz ampoules, annealed (800°C, 1400 h); single phase (microstructural analysis), samples prepared with total of 0.25 at.% dopant (Ge = 99.75 at.%) and others with total dopant content of 5 E19 cm-3, also Ge:Sb = 3:1, 1:1 and 1:3;	100%

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: 7440-55-3
gallium

: 7439-91-0
lanthanum

: 10099-58-8
lanthanum(III) chloride

: La10Cl4Ga5

Conditions

Conditions	Yield
In neat (no solvent) stoich. mixt. sealed in Ta tubes under Ar; Ta tubes sealed in silica ampoules (1E-2 mbar); heated (900°C, 20 d);	100%

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: 7440-55-3
gallium

: 7440-56-4
germanium

gallium doped germanium: gallium doped germanium

Conditions

Conditions	Yield
In neat (no solvent) Ge and Ga placed in evacuated (1E-2 Pa), sealed quartz ampoules, annealed (800°C, 1400 h); single phase (microstructural analysis), dopant content of 5 E19 cm-3;	100%

: 7440-55-3
gallium

: 7440-36-0
antimony

: galium antimonide

Conditions

Conditions	Yield
In neat (no solvent) Ga, Sb evacuated, closed in an outgassed quartz ampoule at .apprx.1E-4 Pa, heated at 580.+-.20°C, 140h;	100%
melting in a quartz crucible in flowing hydrogen (purified over Pd, flow rate 70 ml/min); for compensation of evapn. of Sb, 0.1% excess Sb was applied;;
In neat (no solvent) Sb/Ga flux ratio was approx. 8.5, GaAs(001) as substrate, mol. beam epitaxy;

: 7440-55-3
gallium

: 7439-91-0
lanthanum

: 13536-79-3
lanthanum(III) bromide

: La3Br3Ga

Conditions

Conditions	Yield
In neat (no solvent) stoich. mixt. sealed in Ta tubes under Ar; Ta tubes sealed in silica ampoules (1E-2 mbar); heated (850°C, 20 d);	100%

...Expand

: 7440-55-3
gallium

: 7439-91-0
lanthanum

: 13536-79-3
lanthanum(III) bromide

: La10Br4Ga5

Conditions

Conditions	Yield
In neat (no solvent) stoich. mixt. sealed in Ta tubes under Ar; Ta tubes sealed in silica ampoules (1E-2 mbar); heated (950°C, 33 d);	100%

...Expand

: 7440-55-3
gallium

: 14457-87-5
cerium(III) bromide

: Ce4Br2Ga5

Conditions

Conditions	Yield
In neat (no solvent, solid phase) all manipulations under Ar atm.; stoich. mixt. of compds. sealed in Ta tubes then tubes sealed inside silica ampoules under vac. (ca. 1E-2 mbar), heated at 930°C for 36 d;	100%

: 7440-55-3
gallium

: 75-03-6
ethyl iodide

: 2Ga(3+)*3I(1-)*3C2H5(1-)

Conditions

Conditions	Yield
With gallium(III) trichloride for 5h; Inert atmosphere; Reflux;	100%

: 7440-55-3
gallium

: 74-88-4
methyl iodide

2Ga(3+)*3I(1-)*3CH3(1-): 2Ga(3+)*3I(1-)*3CH3(1-)

Conditions

Conditions	Yield
With gallium(III) trichloride for 2h; Inert atmosphere; Reflux;	100%

: 7440-55-3
gallium

: 7553-56-2
iodine

A: (gallium triiodide)2

B: 17845-89-5
Ga(1+)*GaI4(1-)=Ga2I4

C: 2Ga(1+)*Ga2I6(2-) = Ga2(Ga2I6)

Conditions

Conditions	Yield
In toluene at 30℃; Glovebox; Inert atmosphere; Sonication;	A n/a B 100% C n/a

...Expand

: 7440-55-3
gallium

: 7782-50-5
chlorine

: 13450-90-3
Gallium trichloride

Conditions

Conditions	Yield
In melt 5 mol% excess of gaseous chlorine passed through metal gallium melt;	99%
excess Cl2;;
mixt. heating (two-section glass tube, 200-250°C); vac. sublimation (water pump, ca. 250°C);

: 7440-55-3
gallium

: 7440-56-4
germanium

: yttrium

: Y3Ga9Ge

Conditions

Conditions	Yield
In melt mixing of Y, Ga and Ge in ratio Y:Ga:Ge as 1:15:1 under N2; slowly heating (60°C/h) up to 1000°C; holding at 1000°C for 5 h; cooling (75°C/h) to 850°C; holding isothermally for 6 days; cooling to 200°C; hot-temp. span-filtration; treatment with 3 M soln. of I2 in DMF for 12-24 h; rinsing with DMF, hot water, drying with acetone and ether;	99%

...Expand

: 7440-55-3
gallium

: 7440-56-4
germanium

: ytterbium

: Yb3Ga9Ge

Conditions

Conditions	Yield
In melt mixing of Yb, Ga and Ge in ratio Yb:Ga:Ge as 1:15:1 under N2; slowly heating (60°C/h) up to 1000°C; holding at 1000°C for 5h; cooling (75°C/h) to 850°C; holding isothermally for 6 days; cooling to 200°C; hot-temp. span-filtration; treatment with 3 M soln. of I2 in DMF for 12-24 h; rinsing with DMF, hot water, drying with acetone and ether;	99%

...Expand

: 7440-55-3
gallium

: 7440-56-4
germanium

: 7440-19-9
samarium

: Sm3Ga9Ge

Conditions

Conditions	Yield
In melt mixing of Sm, Ga and Ge in ratio Sm:Ga:Ge as 1:15:1 under N2; slowly heating (60°C/h) up to 1000°C; holding at 1000°C for 5h; cooling (75°C/h) to 850°C; holding isothermally for 6 days; cooling to 200°C; hot-temp. span-filtration; treatment with 3 M soln. of I2 in DMF for 12-24 h; rinsing with DMF, hot water, drying with acetone and ether;	99%

...Expand

: erbium

: 7440-55-3
gallium

: 7664-41-7
ammonia

erbium-implanted gallium nitride: erbium-implanted gallium nitride

Conditions

Conditions	Yield
In melt Ga mixed with 1 mol% Er in presence of wetting agent Bi in quartz tube placed in furnace, after purging with Ar for 1 h, heating under Ar flow at 950-1050 °C, gas switched from Ar to NH3, temp. held for 3-5 h;	99%
In gas Ga and Er were deposited on sapphire substrate at 700°C under ammonia flow;

...Expand

: 7440-55-3
gallium

: 81795-88-2
triethylarsine diiodide

: 182921-15-9
[GaI2(As(C2H5)3)]2

Conditions

Conditions	Yield
In not given recrystn. (Et2O);	99%

: 7440-55-3
gallium

: 75-75-2
methanesulfonic acid

: galium(III) mesylate

Conditions

Conditions	Yield
In nitromethane at 20℃; for 1.5h; Sonication;	99%

: 7440-55-3
gallium

: 7732-18-5
water

: gallium(III) oxide

Conditions

Conditions	Yield
Stage #1: gallium; water With hydrogenchloride; potassium oxalate; urea at 20℃; for 0.5h; Stage #2: at 179.84℃; for 3h; Reagent/catalyst; Autoclave;	99%

: 7440-55-3
gallium

: 7782-50-5
chlorine

: gallium(III) trichloride

Conditions

Conditions	Yield
Heating;	99%
In neat (no solvent)

: 7440-55-3
gallium

: 7429-90-5
aluminium

: aluminum gallium

Conditions

Conditions	Yield
In neat (no solvent) Al and Ga metals were heated in sealed quartz tube to 700° and then cooled to room temp.;	98%
In neat (no solvent)
In neat (no solvent)
In neat (no solvent) melting Ga and Al in a porcelain tube in vac.;;

: 7440-55-3
gallium

: 3383-21-9
3,5-di-tert-butyl-o-benzoquinone

: gallium(III) tris(3,5-di-tert-butyl-1,2-semibenzoquinonate)

Conditions

Conditions	Yield
In toluene N2 atmosphere; refluxing (24 h); removal of solvent; elem. anal.;	98%

: 7440-55-3
gallium

: 84-11-7
9,10-phenanthrenequinone

: gallium(III) tris(9,10-phenanthrenesemiquinonate)

Conditions

Conditions	Yield
In toluene 1:3 mixt. refluxed in toluene for 18 h (until metal was completely dissolved); filtration, evapd. to dryness, elem. anal.;	98%

: 7440-55-3
gallium

: 301658-93-5
2,6-bis[1-[(2,6-di(iso-propyl)phenyl)imino]-benzyl]pyridine

: 7553-56-2
iodine

: 108-88-3
toluene

: [GaI2(2,6-bis[1-[(2,5-di(isopropyl)phenyl)imino]benzyl]pyridine)GaI4]3*toluene

Conditions

Conditions	Yield
In toluene Sonication; (under N2); Ga and I2 added to soln. of ligand in toluene, sealed, sonicated for 3 h, stirred overnight; filtered, washed with hexane, dried under vac.;	98%

...Expand

: 7440-55-3
gallium

: methyl aluminium sesquichloride

A: 75-24-1
trimethylaluminum

B: 1445-79-0
trimethyl gallium

Conditions

Conditions	Yield
With methylene chloride; sodium at 40 - 50℃; under 375.038 Torr; Inert atmosphere; Flow reactor;	A 93.7% B 96.8%

...Expand

Gallium History

Gallium (CAS NO.7440-55-3) was first discovered by Paul Emile Lecoq de Boisbaudran in 1875 by its characteristic spectrum in an examination of a zinc blende from the Pyrenees. Later, in 1875, Lecoq obtained the free metal by electrolysis of its hydroxide in potassium hydroxide solution. He named the element "gallia" after his native land of France.

Gallium Consensus Reports

Reported in EPA TSCA Inventory.

Gallium Standards and Recommendations

DOT Classification: 8; Label: Corrosive

Gallium Specification

The Gallium, with the cas registry number 7440-55-3, is a kind of silvery-white liquid at room temperature. This is stable chemically and sensitive to moisture and is incompatible with strong acids, strong bases, halogens, strong oxidizing agents.

Its product categories are including Inorganics; Gallium; Metal and Ceramic Science; Metals; AA Standard SolutionsAnalytical Standards; GSpectroscopy; AAS; Alphabetic; Matrix Selection; NitrateSpectroscopy; Reference/Calibration Standards; Single Solution; Standard Solutions; Analytical Standards; GApplication CRMs; ICP CRMs; ICP-OES/-MS; ICPSpectroscopy; Spectroscopy.

The physical properties of this chemical are as below: (1)#H bond acceptors: 0; (2)#H bond donors: 0; (3)#Freely Rotating Bonds: 0; (4)Polar Surface Area: 0; (5)Exact Mass: 68.925581; (6)MonoIsotopic Mass: 68.925581; (7)Heavy Atom Count: 1; (8)Covalently-Bonded Unit Count: 1.

The production method of this chemical is below: add the high purity gallium solvent into the reactor and stir and then add oxalic acid to have the reduction reaction; Next filter and then wash with the deionized water, and then you could get the high purity products.

When you are dealing with this chemical, you should be very careful. For one thing, it is irritant which may cause inflammation to the skin or other mucous membranes and it is irritating to eyes and skin. For another thing, it is toxic which may at low levels cause damage to health. It will be toxic if by inhalation, in contact with skin and if swallowed. In addition, it is corrosive which may destroy living tissue on contact and may causes burns.

Due to so many dangers mentioned above, you should take different measures to deal with different cases. Wear suitable protective clothing, gloves and eye/face protection. If in case of contact with eyes, rinse immediately with plenty of water and seek medical advice and if in case of accident or if you feel unwell, seek medical advice immediately (show label). After contact with skin, wash immediately with plenty of ... (to be specified by the manufacturer). Besides, take off immediately all contaminated clothing.

As to its usage, it is widely applied in many fields. It could be used in producing semiconductor [semiconducting] material and high purity alloy; It could be used as a dopant for the production of solid-state devices such as transistors, and as a component in low-melting alloys and solders. In addition, it can be used to fight bacterial infections in people with cystic fibrosis.

In addition, you could obtain the molecular structure by using the following datas:
(1)Canonical SMILES: [Ga]
(2)InChI: InChI=1S/Ga
(3)InChIKey: GYHNNYVSQQEPJS-UHFFFAOYSA-N

Product Name

Gallium

Synthetic route

Gallium History

Gallium Consensus Reports

Gallium Standards and Recommendations

Gallium Specification

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