Conditions | Yield |
---|---|
With trichloroisocyanuric acid In dichloromethane Heating; | 99.7% |
With trichloroisocyanuric acid; copper(l) chloride In dichloromethane at 25℃; for 4h; Temperature; Reagent/catalyst; Reflux; Inert atmosphere; |
tetraethoxy orthosilicate
acetyl chloride
A
chlorotriethoxysilane
B
ethyl acetate
Conditions | Yield |
---|---|
With aluminium trichloride Heating; | A 92% B n/a |
Conditions | Yield |
---|---|
With tetrachlorosilane at 20 - 25℃; for 2.16667h; Product distribution / selectivity; | 86% |
With thionyl chloride In N,N-dimethyl-formamide at 25℃; for 4h; | 85% |
With tetrachlorosilane at 20℃; Product distribution / selectivity; | 73% |
Methyltrichlorosilane
tetraethoxy orthosilicate
A
ethoxy(methyl)dichlorosilane
B
chloro(diethoxy)(methyl)silane
C
chlorotriethoxysilane
Conditions | Yield |
---|---|
at 20 - 22℃; for 150h; | A 86% B 12% C n/a |
at 20 - 22℃; for 150h; | A n/a B n/a C 5% |
tetrachlorosilane
tetraethoxy orthosilicate
chlorotriethoxysilane
Conditions | Yield |
---|---|
In neat (no solvent) heating of Si(OC2H5)4 and SiCl4 (3:1 mol) at 150°C in a closed tube;; | 85% |
In neat (no solvent) heating of Si(OC2H5)4 and SiCl4 (3:1 mol) at 150°C in a closed tube;; | 85% |
In neat (no solvent) heating of Si(OC2H5)4 and SiCl4 (3:1 mol) at 150°C in a closed tube;; | |
In neat (no solvent) heating of Si(OC2H5)4 and SiCl4 (3:1 mol) at 150°C in a closed tube;; |
tetraethoxy orthosilicate
dichloromethylphenylsilane
A
chlorotriethoxysilane
B
chloro(phenyl)ethoxy(methyl)silane
C
diethoxy-methyl-phenyl-silane
Conditions | Yield |
---|---|
at 20 - 22℃; for 160h; | A 5.13 g B 83% C 15% |
at 20 - 22℃; for 160h; | A 5.13 g B 5.01 g C 0.96 g |
Conditions | Yield |
---|---|
With tetrachlorosilane at 20 - 30℃; for 2.5 - 24h; Product distribution / selectivity; | 14.4% |
dichlorodiethoxysilane
A
trichloroethoxysilane
B
chlorotriethoxysilane
Conditions | Yield |
---|---|
at 160℃; Gleichgewicht; | |
bei der Destillation; |
tetraethoxy orthosilicate
benzoyl chloride
A
chlorotriethoxysilane
B
benzoic acid ethyl ester
Conditions | Yield |
---|---|
at 135℃; | |
at 170 - 180℃; | |
at 160℃; for 1h; |
chloro-trimethyl-silane
tetraethoxy orthosilicate
A
ethoxy(methyl)dichlorosilane
B
chloro(diethoxy)(methyl)silane
C
dichlorodiethoxysilane
D
chlorotriethoxysilane
Conditions | Yield |
---|---|
Product distribution; | A 51.3 % Spectr. B 6.4 % Spectr. C 25.6 % Spectr. D 10.3 % Spectr. |
Methyltrichlorosilane
tetraethoxy orthosilicate
A
ethoxy(methyl)dichlorosilane
B
trichloroethoxysilane
C
chloro(diethoxy)(methyl)silane
D
dichlorodiethoxysilane
E
Methyltriethoxysilan
F
chlorotriethoxysilane
Conditions | Yield |
---|---|
N,N-dimethyl-formamide at 90℃; for 5.5h; Product distribution; Thermodynamic data; Equilibrium constant; ΔG0, ΔH0; |
tetraethoxy orthosilicate
trichlorovinylsilane
A
trichloroethoxysilane
B
dichlorodiethoxysilane
C
chlorotriethoxysilane
D
Triethoxyvinylsilane
E
vinyldi(ethoxy)chlorosilane
F
vinyl(ethoxy)dichlorosilane
Conditions | Yield |
---|---|
N,N-dimethyl-formamide at 90℃; for 5.5h; Product distribution; Thermodynamic data; Equilibrium constant; ΔG0, ΔH0; |
tetraethoxy orthosilicate
Phenyltrichlorosilane
A
trichloroethoxysilane
B
dichlorodiethoxysilane
C
chlorotriethoxysilane
D
phenyldiethoxychlorosilane
E
triethoxyphenylsilane
F
phenylethoxydichlorosilane
Conditions | Yield |
---|---|
N,N-dimethyl-formamide at 90℃; for 5.5h; Product distribution; Thermodynamic data; Equilibrium constant; ΔG0, ΔH0; |
tetraethoxy orthosilicate
Phenyltrichlorosilane
A
trichloroethoxysilane
B
dichlorodiethoxysilane
C
chlorotriethoxysilane
D
phenyldiethoxychlorosilane
E
phenylethoxydichlorosilane
Conditions | Yield |
---|---|
Product distribution; | A 4.4 % Spectr. B 25.6 % Spectr. C 5.0 % Spectr. D 4.3 % Spectr. E 45.0 % Spectr. |
tetraethoxy orthosilicate
1,1,1,3,3,3-hexachloro-1,3-disilapropane
A
chlorotriethoxysilane
Conditions | Yield |
---|---|
at 20 - 22℃; for 160h; | A 8.9 g B 0.74 g C 5.5 g |
ethanol
A
tetraethoxy orthosilicate
B
dichlorodiethoxysilane
C
chlorotriethoxysilane
Conditions | Yield |
---|---|
With tetrachlorosilane In pentane -70 deg C to room t.; Yield given. Yields of byproduct given. Title compound not separated from byproducts; |
chlorotriethoxysilane
2-(1-Hydroxybenzyl)-1,3,2-dioxaphosphorinan-2-oxide
Conditions | Yield |
---|---|
With pyridine In toluene Ambient temperature; | 98% |
chlorotriethoxysilane
Conditions | Yield |
---|---|
With 1H-imidazole; dmap In N,N-dimethyl-formamide at 20℃; for 3h; | 97% |
chlorotriethoxysilane
lithium phenylacetylide
1-triethoxysilyl-2-phenylacetylene
Conditions | Yield |
---|---|
In tetrahydrofuran at 20℃; | 95% |
chlorotriethoxysilane
phenylacetylene
1-triethoxysilyl-2-phenylacetylene
Conditions | Yield |
---|---|
Stage #1: phenylacetylene With n-butyllithium In tetrahydrofuran; hexane at -70 - 20℃; Stage #2: chlorotriethoxysilane In tetrahydrofuran; hexane at 0 - 20℃; Further stages.; | 95% |
Stage #1: phenylacetylene With n-butyllithium In tetrahydrofuran; hexane at 0℃; Stage #2: chlorotriethoxysilane In tetrahydrofuran; hexane at -78 - 20℃; for 16h; |
chlorotriethoxysilane
diethylamine
A
tetraethoxy orthosilicate
B
N-(triethoxysilyl)diethylamine
Conditions | Yield |
---|---|
With triethylamine In n-heptane at 20℃; Product distribution / selectivity; | A 6% B 93% |
Conditions | Yield |
---|---|
Stage #1: C74H54N4O2 With triethylamine In tetrahydrofuran at 20℃; for 0.166667h; Stage #2: chlorotriethoxysilane In tetrahydrofuran at 20℃; for 15h; | 93% |
Conditions | Yield |
---|---|
With triethylamine In tetrahydrofuran at 20℃; for 1h; | 90.6% |
With triethylamine In tetrahydrofuran at 20℃; for 1h; Sealed tube; | 90.6% |
chlorotriethoxysilane
ammonium thiocyanate
triethoxy isothiocyanato silane
Conditions | Yield |
---|---|
In cyclohexane for 30h; Heating; | 90% |
chlorotriethoxysilane
Conditions | Yield |
---|---|
In ethanol; glycerol | 90% |
Conditions | Yield |
---|---|
In tetrahydrofuran at 60℃; for 12h; Inert atmosphere; | 87% |
Conditions | Yield |
---|---|
In tetrahydrofuran at -20 - 20℃; for 1h; | 87% |
Conditions | Yield |
---|---|
With triethylamine In toluene at 20℃; for 1h; Inert atmosphere; Schlenk technique; | 86% |
Conditions | Yield |
---|---|
With pyridine In tetrahydrofuran at 20℃; for 2h; | 85% |
With pyridine In tetrahydrofuran at 20℃; for 2h; Sealed tube; | 85% |
chlorotriethoxysilane
chloroprene
(buta-1,3-dien-2-yl)triethoxysilane
Conditions | Yield |
---|---|
Stage #1: chloroprene With 1,1-Dibromoethane; magnesium; zinc(II) chloride In tetrahydrofuran; xylene for 0.75h; Heating; Stage #2: chlorotriethoxysilane In tetrahydrofuran for 1h; Heating; Further stages.; | 84.7% |
Stage #1: chloroprene With magnesium; ethylene dibromide; zinc(II) chloride In tetrahydrofuran; xylenes for 1.33333h; Heating / reflux; Stage #2: chlorotriethoxysilane In tetrahydrofuran; xylenes at 20℃; for 1h; Heating / reflux; | 84.7% |
Stage #1: chloroprene With magnesium; ethylene dibromide; zinc(II) chloride In tetrahydrofuran; xylenes for 1.25h; Reflux; Stage #2: chlorotriethoxysilane In tetrahydrofuran; xylenes for 1h; Reflux; |
chlorotriethoxysilane
silver thiocyanate
triethoxy isothiocyanato silane
Conditions | Yield |
---|---|
In benzene | 80% |
In benzene | 80% |
With benzene |
3-[(trifluorovinyl)oxy]bromobenzene
chlorotriethoxysilane
[3-[(trifluorovinyl)oxy]phenyl]triethoxysilane
Conditions | Yield |
---|---|
Stage #1: 3-[(trifluorovinyl)oxy]bromobenzene With magnesium In tetrahydrofuran at 0 - 20℃; for 2h; Stage #2: chlorotriethoxysilane In tetrahydrofuran at -48 - 20℃; for 24h; | 80% |
chlorotriethoxysilane
acetylenemagnesium bromide
triethoxyethynylsilane
Conditions | Yield |
---|---|
In tetrahydrofuran at -78 - 50℃; for 5h; | 80% |
Conditions | Yield |
---|---|
With 2-((2,4,6-trimethylphenyl)amino)-4-((2,4,6-trimethylphenyl)imino)-2-pentene; cobalt(II) aceylacetonate; magnesium In tetrahydrofuran at 25℃; for 24h; Inert atmosphere; Glovebox; | 79% |
Conditions | Yield |
---|---|
With pyridine In toluene at 20℃; for 48h; Schlenk technique; Inert atmosphere; | 78% |
chlorotriethoxysilane
4-methyl-4'-fluorobiphenyl
Conditions | Yield |
---|---|
With 2-((2,4,6-trimethylphenyl)amino)-4-((2,4,6-trimethylphenyl)imino)-2-pentene; cobalt(II) aceylacetonate; magnesium In tetrahydrofuran at 25℃; for 16h; Inert atmosphere; Glovebox; | 76% |
chlorotriethoxysilane
(E)-1-(2-iodophenyl)-2-phenyldiazene
triethoxy[2-((E)-phenylazo)phenyl]silane
Conditions | Yield |
---|---|
Stage #1: (E)-1-(2-iodophenyl)-2-phenyldiazene With n-butyllithium In tetrahydrofuran; hexane at -105℃; for 0.0833333h; Stage #2: chlorotriethoxysilane In tetrahydrofuran; hexane at 0℃; for 3h; | 75% |
With n-butyllithium In tetrahydrofuran; hexane at 0℃; for 22h; | 75% |
1-bromo-4-ethenyl-benzene
chlorotriethoxysilane
triethoxy(4-vinylphenyl)silane
Conditions | Yield |
---|---|
Stage #1: 1-bromo-4-ethenyl-benzene With magnesium In tetrahydrofuran for 1h; Stage #2: chlorotriethoxysilane In tetrahydrofuran Further stages.; | 75% |
Conditions | Yield |
---|---|
In n-heptane at 20℃; for 2h; Product distribution / selectivity; | 75% |
at 25 - 30℃; for 2.5h; Product distribution / selectivity; | 8.6% |
The Silane, chlorotriethoxy-, with the CAS registry number of 4667-99-6, is also known as Triethoxychlorosilane. Its EINECS registry number is 225-112-9. This chemical's molecular formula is C6H15ClO3Si and molecular weight is 198.72. What's more, its IUPAC name is Chloro(triethoxy)silane. In addition, it must be stored in airtight containers filled with Nitrogen and placed in a dry, cool place at 2-8 °C. Meanwhile, it should be avoided contact with oxidant.
Physical properties about Silane, chlorotriethoxy- are: (1)ACD/LogP: 5.12; (2)# of Rule of 5 Violations: 1; (3)ACD/LogD (pH 5.5): 5.12; (4)ACD/LogD (pH 7.4): 5.12; (5)ACD/BCF (pH 5.5): 4618.11; (6)ACD/BCF (pH 7.4): 4618.11; (7)ACD/KOC (pH 5.5): 14608.88; (8)ACD/KOC (pH 7.4): 14608.88; (9)#H bond acceptors: 3; (10)#H bond donors: 0; (11)#Freely Rotating Bonds: 6; (12)Polar Surface Area: 27.69 Å2; (13)Index of Refraction: 1.416; (14)Molar Refractivity: 48.64 cm3; (15)Molar Volume: 193.7 cm3; (16)Surface Tension: 23.6 dyne/cm; (17)Density: 1.025 g/cm3; (18)Flash Point: 40.1 °C; (19)Enthalpy of Vaporization: 37.65 kJ/mol; (20)Boiling Point: 156 °C at 760 mmHg; (21)Vapour Pressure: 3.8 mmHg at 25 °C.
Preparation: this chemical is prepared by Diethoxy-dimethyl-silane. The reaction needs reagent SiCl4. The reaction time is 5 hours with reaction temperature of 165 °C. The yield is about 60.6 %.
Uses: it is used to produce other chemicals. For example, it is used to produce Triethoxy-isothiocyanato-silane by heating. The reaction needs solvent Cyclohexane. The reaction time is 30 hours. The yield is about 90 %.
When you are using this chemical, please be cautious about it as the following:
This chemical may cause burns on contact. During using it, wear suitable protective clothing, gloves and eye/face protection. In case of contact with eyes, rinse immediately with plenty of water and seek medical advice. Besides, this chemical is flammable, and it may catch fire in contact with an ignition source. Hence, keep it away from sources of ignition.
You can still convert the following datas into molecular structure:
(1) SMILES: Cl[Si](OCC)(OCC)OCC
(2) InChI: InChI=1/C6H15ClO3Si/c1-4-8-11(7,9-5-2)10-6-3/h4-6H2,1-3H3
(3) InChIKey: JEZFASCUIZYYEV-UHFFFAOYAI
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