Conditions | Yield |
---|---|
In gas other Radiation; Laser thermochemical synthesis of gaseous TeH2 from gaseous H and Te atoms.; | 100% |
In neat (no solvent) quick reaction of atomic hydrogen with a Te mirror at -10°C;; | |
In neat (no solvent) Kinetics; |
hydrogen telluride
Conditions | Yield |
---|---|
In hydrogenchloride addn. of pure Al2Te3 (from Te vapor and heated Al) into excess of 4n HCl soln. free of air in special app. under exclusion of O2, moisture and light; gas with 40% H2Te;; | 80% |
In hydrogenchloride addn. of pure Al2Te3 (from Te vapor and heated Al) into excess of 4n HCl soln. free of air in special app. under exclusion of O2, moisture and light; gas with 40% H2Te;; | 80% |
In sulfuric acid addn. of pure Al2Te3 (from Te vapor and heated Al) into excess of 4n H2SO4 soln. free of air in special app. under exclusion of O2, moisture and light; gas with 40% H2Te;; | 76% |
Conditions | Yield |
---|---|
In not given byproducts: H2; reactn. with acids;; | 8.3% |
In not given byproducts: H2; reactn. with acids;; | 8.3% |
In not given byproducts: H2; reactn. with acids;; | |
In not given byproducts: H2; reactn. with acids;; |
Conditions | Yield |
---|---|
In water | |
In water react. of excess Al2Te3 with 0.5 M H2SO4 in N2 atm.; | |
In sulfuric acid H2Te gas generated by addn. of 0.5 M H2SO4 to Al2Te3 under N2 atm.; |
Conditions | Yield |
---|---|
With acetic acid In not given between pH= 4.2-5.5; | |
With NH4-acetae; acetic acid In not given between pH= 4.2-5.5; |
Conditions | Yield |
---|---|
With hydrogen In neat (no solvent) on heating in stream of H2; at the end of reaction very slowly, complete after some days;; | A n/a B 0% |
With H2 In neat (no solvent) on heating in stream of H2; at the end of reaction very slowly, complete after some days;; | A n/a B 0% |
hydrogen telluride
Conditions | Yield |
---|---|
With titanium(III) chloride In not given freshly pptd. Te;; | |
electrochemical reduction of elemental tellurium in acidic soln.; | |
With zinc In sulfuric acid reduction of dild. H2SO4 containing Te with Zn;; |
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: arsenic telluride; Irradiation (UV/VIS); passing AsH3 over powdered Te in sun light;; pptn. of arsenic telluride;; |
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: antimony telluride; Irradiation (UV/VIS); passing AsH3 over powdered Te in sun light;; pptn. of antimony telluride;; |
sodium tetrahydroborate
hydrogen telluride
Conditions | Yield |
---|---|
With Te(IV)-compd. In water | |
With Te(IV)-compd. In water |
Conditions | Yield |
---|---|
tellurium In neat (no solvent) byproducts: H2; absorption of H2S to Te, incomplete catalytic decompn. above 150°C;; products are H2 and S, no formation of H2Te or sulfide;; | A 0% B n/a |
Conditions | Yield |
---|---|
With acetic acid In not given between pH= 4.2-5.5; | |
With NH4-acetate; acetic acid In not given between pH= 4.2-5.5; |
tellurite(2-)
hydrogen telluride
Conditions | Yield |
---|---|
With Al or P or hypophosphite In not given reduction of weakly alkaline TeO3(2-)-soln. with Al, P or hypophosphite;; | |
With water In water Electrochem. Process; dropping Hg electrode; mechanism discussed;; | |
With H2O In water Electrochem. Process; dropping Hg electrode; mechanism discussed;; |
tellurate ion
hydrogen telluride
Conditions | Yield |
---|---|
With ammonium acetate; titanium(III) chloride In acetic acid reduction of acetic ammonium acetate soln. containing tellurate with TiCl3 on warming;; |
Conditions | Yield |
---|---|
In neat (no solvent) | |
In neat (no solvent) |
Conditions | Yield |
---|---|
In neat (no solvent) reduction of CeTe with H2 at red heat;; | |
In neat (no solvent) |
Conditions | Yield |
---|---|
In water easily decomposable;; | |
In water easily decomposable;; |
Conditions | Yield |
---|---|
In water Electrolysis; electrolysis of water with Te-cathode;; | |
In sulfuric acid on dispersion of selenium in pure water on a Pt-cathode by use of electric current;; | |
In sulfuric acid aq. H2SO4; on dispersion of selenium in pure water on a Pt-cathode by use of electric current;; |
Conditions | Yield |
---|---|
In sulfuric acid aq. H2SO4; Electrolysis; Te/graphite cathode, Pt-anode, aq. H2SO4 as electrolyte, cell immersed in ice bath, Ar bubbled through electrolyte; |
Conditions | Yield |
---|---|
In tetrahydrofuran byproducts: Al(OH)3; hydrolysis of Al2Te3 with water in THF at 0°C; | |
In hydrogenchloride byproducts: Al(OH)3; aq. HCl dropwise addn. to Al2Te3 in dark; trap-to-trap distn. (vac.); |
Conditions | Yield |
---|---|
With acids In water decomposition of alkali tellurides with dild. acids;; small yield;; | |
In water decomposition of alkali tellurides with water;; small yield;; | |
With acids In water decomposition of alkali tellurides with dild. acids;; small yield;; | |
In water decomposition of alkali tellurides with water;; small yield;; |
Conditions | Yield |
---|---|
With hydrogen In neat (no solvent) slowly reduction to Te in a stream of H2 below 300°C;; | A n/a B 0% |
With H2 In neat (no solvent) slowly reduction to Te in a stream of H2 below 300°C;; | A n/a B 0% |
Conditions | Yield |
---|---|
In not given reaction of Te with cacodylic acid;; |
hydrogen telluride
Conditions | Yield |
---|---|
With acid | |
With acid |
hydrogen telluride
Conditions | Yield |
---|---|
With air or water decompn. caused by moisture in the air or in pure water; | |
With air or water decompn. caused by moisture in the air or in pure water; |
hydrogen telluride
Conditions | Yield |
---|---|
With water In water decompn. to H2Se;; | |
With H2O In water decompn. to H2Se;; |
Conditions | Yield |
---|---|
In sulfuric acid CdTe reacts with 0.3n H2SO4 soln. in presence of sodium amalgam (1% Na) in 10-30 s;; | 96-98 |
In sulfuric acid CdTe reacts with 5n H2SO4 soln. in presence of sodium amalgam (1% Na) in 1 s;; | 97-99 |
Conditions | Yield |
---|---|
In hydrogenchloride CdTe reacts with 0.3-5n H2SO4 soln. in presence of sodium amalgam (1% Na);; |
hydrogen telluride
bis(trimethylgermyl)carbodiimide
B
Bis(trimethylgermyl)tellurid
Conditions | Yield |
---|---|
In neat (no solvent) condensation of excess of H2Te onto Ge-compd. (-196°C), warming to room temp., standing for 60 min; fractional low-temp. distn. (collection at -196°C); | A n/a B 89% |
Conditions | Yield |
---|---|
In neat (no solvent) condensation of excess of H2Te onto Ge-compd. (-196°C), warming to room temp., standing for 60 min; fractional low-temp. distn. (collection at -196°C); | A n/a B 79% |
hydrogen telluride
Conditions | Yield |
---|---|
In tetrahydrofuran for 0.0833333h; Darkness; Cooling; | 78% |
Conditions | Yield |
---|---|
In neat (no solvent) condensation of excess of H2Te onto Ge-compd. (-196°C), warming to room temp., standing for 60 min; fractional low-temp. distn. (collection at -196°C); | A n/a B 62% |
hydrogen telluride
di-μ-chloro-bis(1,5-cyclooctadiene)dirhodium
tris(2-diphenylphosphinoethyl)phosphine
silver trifluoromethanesulfonate
{(tris(2-(diphenylphosphino)ethyl)phosphine)RhTeH}
Conditions | Yield |
---|---|
In tetrahydrofuran; ethanol byproducts: AgCl; under N2; soln. of AgCF3SO3 added to soln. of Rh-compd., stirred at 40-45°C for 1h, filtered, addn. of soln. of ligand, light red soln., addn. of hot H2Te in EtOH; quick concn. in the dark, filtered (closed system), washed (EtOH, petroleum ether), dried under N2; elem. anal.; | 60% |
hydrogen telluride
Conditions | Yield |
---|---|
In tetrahydrofuran at -34℃; Inert atmosphere; Schlenk technique; Darkness; | 50% |
hydrogen telluride
triethylphosphine
Conditions | Yield |
---|---|
With (nBu4N)PF6 In ethanol; acetone (N2); molar ratio of Fe(ClO4)2 and PEt3 = 1:3, react. in the presence of nBu4NPF6; | 40% |
hydrogen telluride
(C5(CH3)5)ReH(CO)2TeH
D
[(C5(CH3)5)Re(CO)2Te]2
Conditions | Yield |
---|---|
In tetrahydrofuran addn. of TeH2 to Re-complex in THF, stirring (darkness, 4 h); evapn. to dryness, chromy. (Florosil, -20°C, hexane/toluene 5:1;hexane/toluene 3:1 Te(Cp*Re(CO)2)2; hexane/toluene 1:1 (Cp*Re(CO)2Te)2;toluene/Et2O 3:1 μ,η-isomer (Cp*Re(CO)2Te)2), recrystn.; | A 9% B 10% C 2% D 24% |
Conditions | Yield |
---|---|
With mercaptoacetic acid In water for 0.25 - 24h; pH=11.8; Heating / reflux; | |
With sodium hydroxide; mercaptoacetic acid In water into soln. of Cd(ClO4)2, thioglycolic acid with pH=11.2 (aq. NaOH) was passed in N2 flow at room temp.; soln. refluxed at 100°C; |
hydrogen telluride
2'-(β-D-glucopyranosyloxy)-6'-hydroxy-3-(5-benzo[b]-furanyl)propiophenone
Conditions | Yield |
---|---|
With sodium borohydrid In ethanol; water; ethyl acetate |
hydrogen telluride
Conditions | Yield |
---|---|
With sodium borohydrid In ethanol; acetic acid |
hydrogen telluride
3(2H)-Oxo-5H-thiazolo<2,3-b>chinazolin-2-methincarbonsaeuremethylester
2,3-dihydro-3-oxo-5H-thiazolo<2,3-b>quinazolin-2-acetic acid methyl ester
Conditions | Yield |
---|---|
With sodium borohydrid In ethanol; water; acetic acid |
hydrogen telluride
Iodoacetic acid
24-nor-23-iodo-3α,12α-bis(formyloxy)-7-deoxy-5β-cholane
Conditions | Yield |
---|---|
With sodium hydroxide; sodium | 30 mg (16%) |
Conditions | Yield |
---|---|
With sodium In ammonia |
Conditions | Yield |
---|---|
In gas |
Conditions | Yield |
---|---|
reaction of H2Te with a solution of CdCl2;; | |
reaction of H2Te with a solution of CdCl2;; |
Conditions | Yield |
---|---|
With sodium hydroxide In water thiolglycolic acid or L-cysteine added to soln. of Cd salt (pH .approx. 11, NaOH), soln. purged with N2 for 30 min; then gaseous H2Te in N2 atm.combined with Cd(2+) soln.; refluxed at 100°C; nanoparticles extd., not isolated; detd. by HRTEM, XRD; | |
With thioglycolic acid In sodium hydroxide aq. NaOH; addn. of thioglycolic acid to aq. soln. of cadmium compd., adjusting pH to 11 by aq. NaOH, purging with N2 for 30 min, addn. of H2Te; refluxing for 100°C; |
The Tellurium, with the cas registry number 13494-80-9, is a kind of silvery white crystalline solid. Being soluble in sulfuric acid, nitric acid, aqua regia, potassium cyanide, potassium hydroxide while insoluble in cold and hot water and carbon disulfide, this chemical could reacts with nitric acid and concentrated sulfuric acid with the form of red solution. Besides, it could dissolves in potassium hydroxide in the presence of air with formation of deep red solution. In addition, its product categories are including Inorganics; Electronic Chemicals; Micro/Nanoelectronics; Pure Elements; Metal and Ceramic Science; Metals; Tellurium.
Physical properties about Tellurium are: (1)#H bond acceptors: 0; (2)#H bond donors: 0; (3)#Freely Rotating Bonds: 0; (4)Polar Surface Area: 0; (5)Exact Mass: 129.906223; (6)MonoIsotopic Mass: 129.906223; (7)Heavy Atom Count: 1; (8)Covalently-Bonded Unit Count: 1.
Preparation of Tellurium: First prepare the raw material of Tellurium powder, and then extract and refine with sodium polysulfide to get this product with the purity of 99.999%.
Uses of Tellurium: As to its usage, it is widely applied in many ways. It could be used as a chemical bonder in producing the outer shell of the first atom bomb and also in the fileds of thermoelectricity and free-machining steel; It could then be used as the colorant for ceramics and glass, vulcanized agent of rubber, catalytic agent for petroleum cracking process.
When you are dealing with this chemical, you should be careful. For being a kind of toxic chemical, it will at low levels cause damage to health. If swallowed, it is also very toxic. Therefore, if in case of accident or if you feel unwell seek medical advice immediately (show the label where possible).
You can still convert the following datas into molecular structure:
(1)Canonical SMILES: [Te]
(2)InChI: InChI=1S/Te
(3)InChIKey: PORWMNRCUJJQNO-UHFFFAOYSA-N
The toxicity data is as follows:
Organism | Test Type | Route | Reported Dose (Normalized Dose) | Effect | Source |
---|---|---|---|---|---|
guinea pig | LD50 | oral | 45mg/kg (45mg/kg) | "Toxicometric Parameters of Industrial Toxic Chemicals Under Single Exposure," Izmerov, N.F., et al., Moscow, Centre of International Projects, GKNT, 1982Vol. -, Pg. 107, 1982. | |
mouse | LD50 | oral | 20mg/kg (20mg/kg) | "Toxicometric Parameters of Industrial Toxic Chemicals Under Single Exposure," Izmerov, N.F., et al., Moscow, Centre of International Projects, GKNT, 1982Vol. -, Pg. 107, 1982. | |
rabbit | LD50 | oral | 67mg/kg (67mg/kg) | "Toxicometric Parameters of Industrial Toxic Chemicals Under Single Exposure," Izmerov, N.F., et al., Moscow, Centre of International Projects, GKNT, 1982Vol. -, Pg. 107, 1982. | |
rat | LC50 | inhalation | > 2420mg/m3/4H (2420mg/m3) | TNO-report. Vol. TNO-92-008, | |
rat | LC50 | inhalation | > 2420mg/m3/4H (2420mg/m3) | LUNGS, THORAX, OR RESPIRATION: OTHER CHANGES | TNO-report. Vol. TNO-92-008, |
rat | LD50 | oral | 83mg/kg (83mg/kg) | "Toxicometric Parameters of Industrial Toxic Chemicals Under Single Exposure," Izmerov, N.F., et al., Moscow, Centre of International Projects, GKNT, 1982Vol. -, Pg. 107, 1982. | |
rat | LDLo | intratracheal | 200mg/kg (200mg/kg) | KIDNEY, URETER, AND BLADDER: OTHER CHANGES LUNGS, THORAX, OR RESPIRATION: OTHER CHANGES LIVER: OTHER CHANGES | American Industrial Hygiene Association Journal. Vol. 39, Pg. 100, 1978. |
About|Contact|Cas|Product Name|Molecular|Country|Encyclopedia
Message|New Cas|MSDS|Service|Advertisement|CAS DataBase|Article Data|Manufacturers | Chemical Catalog
©2008 LookChem.com,License: ICP
NO.:Zhejiang16009103
complaints:service@lookchem.com Desktop View