The air oxidation behavior of zirconium-silicide coatings for three stoichiometries, namely, Zr2Si, ZrSi, and ZrSi2, at 700 °C has been investigated. These three coatings were deposited on a zirconium-alloy substrate using a magnetron sputter process at a low temperature. Argon gas pressure was...

Zirconium silicide (ZrSi2) surfaces with micro/nanoscale structures were fabricated using an anodization technique with different working solutions. The surface structures evolved depending on the reaction time, and the resulting surface structures were characterized using scanning electron micr...

Chemical vapor deposition of tungsten silicide into high aspect ratio trenches has been investigated using a commercial 8-inch Applied Materials Centura single wafer deposition tool. For an in-depth study of both step coverage and stoichiometry, a combined chemistry/topography simulator has been...

We have investigated compositional changes of a tip before and after atom manipulation by a scanning tunnelling microscope (STM) combined with an atom probe (AP). On clean Si(0 0 1) : (2×1), the surface was modified by the STM with a bias of +5 V and 2 nA at the sample. The AP mass spectrum cle...

Silicon–germanium alloy layers will be employed in the source–drain engineering of future MOS transistors. The use of this technology offers advantages in reducing series resistance and decreasing junction depth resulting in reduction in punch-through and SCE problems. The contact resistance o...

Experiments are conducted in the W-Si system to understand the diffusion mechanism of the species. The activation energies from integrated diffusion coefficients are calculated as 152 ± 7 and 301 ± 40 kJ/mol in the WSi2 and W5Si3 phases, respectively. In both the phases, Si has a much higher d...

In today’s ULSI technology there is an increasing demand in metal electrodes for storage capacitors and transistors. In this publication we present an investigation of MOS capacitor structures with CVD tungsten silicide (WSix) as metal electrode in conjunction with silicon dioxide (SiO2) and ox...

In the present study, a MEVVA ion implanter was employed to implant tungsten ions into silicon wafers at an elevated temperature of 100°C. The acceleration voltage was 40 kV and the charge states of the implanted tungsten ions were 1+ (8%), 2+ (34%), 3+ (36%), 4+ (19%), and 5+ (3%). The ion flu...

Tungsten silicide layers can be incorporated into silicon-on-insulator (SOI) substrates produced by direct wafer bonding. The series resistance of collectors/drains in bipolar or smart-power circuits can be reduced to 2 Ω/sq. The out-diffusion of the buried implanted collector contact during th...

The effect of filament temperature and deposition time on the formation of tungsten silicide upon exposure to the SiH4 gas in a hot wire chemical vapor deposition process was studied using the techniques of cross-sectional scanning electron microscopy and Auger electron spectroscopy. At a relati...

Porous materials made of commercial tungsten carbide (WC) with the addition of thermally obtained tungsten silicides (WSi2 and W5Si3) were made. The main research's contribution is firstly finding optimal conditions for synthesis tungsten silicides from elementary powders, and lately obtain...

The present study investigated the synthesis of tungsten silicide powders using ternary (WO3-Si-Mg and W-SiO2-Mg) and binary (W-Si) initial systems at room temperature via mechanochemical synthesis (MCS) and mechanical alloying (MA) processes. Milling time was used as a process parameter. Subseq...

This paper presents the growth mechanism of a monocrystalline silicide quantum dot superlattices (QDSL) grown by reduced pressure chemical vapor deposition (RPCVD). QDSL are made of TiSi2-based nanodots scattered in a p-doped Si90Ge10 matrix. It is the first time that the growth of a p-type mono...

The aim of presented work was to study two types of special fireproof textiles covered with titanium silicide coating (Fig.1). In the paper the assessment of the change in heat resistance properties and analysis structure of TiSi coated fireproof textile were carried out. The aim of the research...

Atomic layer deposited (ALD) TiO2 is an attractive material for improving the photoactivity and chemical stability of semiconductor electrodes in artificial photosynthesis. Using photoelectrochemical (PEC) measurements, we show that an interfacial, topographically microstructured TiSi2 layer ins...

We present a widely scalable, high temperature post-growth annealing method for converting ultra-thin films of TiO2 grown by atomic layer deposition to topographically microstructured titanium silicide (TiSi). The photoemission electron microscopy results reveal that the transformation from TiO2...

The fabrication of Ti5Si3 in the form of a solid product directly from an elemental 37.5 at.% Si and 62.5 at.% Ti powder mixture was carried out by two different powder metallurgy routes. The first was by uniaxial pressing of the reactant powder mixture with sequent vacuum-sintering, and the sec...

In this paper, we evaluated the influence of vibrational and electronic free energy on the thermodynamic phase stability of the Ti5Si3, Ti3Si, Ti6Si3, and other silicides in the binary Ti-Si system and the solubility of Si in α-Ti within the density functional theory and harmonic approximation....

Effect of titanium silicide (TiSi2) active filler on the ceramic conversion of polycarbosilane (PCS) under different pyrolytic atmospheres, viz. argon and nitrogen, was studied. Volume shrinkage, Phase evolution and surface morphology of the polymer-filler-pyrolysis atmosphere were analysed. Fil...

The present study concerns development of titanium silicide dispersed titanium aluminide composite with addition of 5 wt.% and 10 wt.% Si in Ti45Al5Nb0.5Si base alloy by direct laser cladding under varied process parameters. Direct laser cladding has been conducted using a high power (3 kW) fibe...