TbSi1.7 was grown on Si(100) and on amorphous Si. After these samples were oxidized at 450°C for 90 min, 600°C for 30 min and 800°C for 30 min at atmospheric pressure, Auger depth profiles for all the samples were measured. These profiles indicate that Tb segregated to the surface. Auger spec...

To improve the performance of VLSI circuits by reducing the parasitic series resistance of long interconnect lines, a composite structure of tantalum silicide and poly-silicon layers with a resistivity of ⪕ 5 Ω□ has been developed. The physical properties of the silicide film were characterize...

HfB2-based composites containing 3 vol% silicides of molybdenum or tantalum as sintering additives are densified by spark plasma sintering at 1900–2000 °C. Mechanical properties are measured up to 1500 °C in air. 4-pt Flexural strength values at 1500 °C are 480 MPa (64% of the RT value) for ...

Electron-stimulated desorption (ESD) of lithium ions has been studied from lithium layers adsorbed on silicided tantalum surfaces, by means of a static magnetic mass spectrometer combined with a retarding field analyzer. The concentration of silicon in the subsurface region of the samples has be...

TaSi2GaAs diodes were studied at different rates of deposition of tantalum silicide. A minimum ideality factor of 1.03 was observed at a deposition rate of 4 Å s−1. At this rate the barrier height was determined to be 0.72 eV using the experimental value of the Richardson constant of 2 A cm−2 ...

Silicon-poor tantalum silicide films cosputtered on polycrystalline silicon over thermal oxide on silicon were rapidly annealed for various temperatures and times using a graphite strip heater. Rutherford backscattering and X-ray diffraction showed rapid formation of a stoichiometric tantalum di...

The oxidation kinetics of SiCf-SiC cladding tube segments and sandwich tubes with an inner tantalum layer in impure helium atmosphere prototypical for GFRs was investigated at ambient pressure in the temperature range between 900 °C and 1600 °C using a thermogravimetric device. The transition ...

Stoichiometric Tantalum carbide (TaC) ceramics were prepared by reaction spark plasma sintering using 0.333–2.50 mol% Si3N4 as sintering aid. Effects of the Si3N4 addition on densification, microstructure and mechanical properties of the TaC ceramics were investigated. Si3N4 reacted with TaC an...

To protect refractory metal against oxidation at ultra-high temperatures, a MoSi2-TaSi2 ceramic coating was prepared on a pure tantalum (Ta) substrate using a novel three-step process, which included dip-coating with a molybdenum slurry, vacuum sintering, and halide-activated pack cementation (H...

The paper reports the first results of observing the visible photoluminescence from the surface of tantalum silicide samples subjected to electrochemical anodization in HF-containing electrolyte. It is shown that at increased concentrations of HF (more than 20%) and low current densities uniform...

The vanadium silicide system has been found to be of increasing interest because one of the silicide phases viz. V3Si with the A-15 structure is often accompanied by a high temperature superconductivity. We have studied the formation of vanadium silicide layers by high dose ion implantation. 30 ...

The purity check of silicon by DLTS and other capacitance spectroscopy techniques requires high-quality ohmic contact to the silicon structure with a gold Schottky barrier using a vanadium silicide layer on the back side of the structure. The samples were made from n-type silicon wafers with a c...

The synthesis of vanadium silicides was investigated using the field-activated combustion synthesis technique. For all V–Si compounds, self-sustaining combustion reactions could be obtained when fields above a threshold value were imposed. Monophasic products were obtained only for the starting...

Pack cementation was used to deposit silicide coatings on a Ti-6Al-1Mn (at.%) alloy to improve the oxidation resistance at temperatures exceeding 700 °C. The first part of this work was focused on the effect of process parameters on composition and morphology of the obtained coatings. In the se...

Vanadium and silicon form several binary compounds; the most well characterized structures have the compositions V:Si = 3:1, 5:3, 6:5, 1:2. Spin-polarized density functional band-structure calculations using the projector augmented wave method have been carried out for the stable binary compound...

V–4Cr–4Ti vanadium alloy is a potential cladding material for sodium-cooled fast-neutron reactors (SFRs). However, its affinity for oxygen and the subsequent embrittlement that oxygen induces causes a need for an oxygen diffusion barrier, which can be obtained by manufacturing a multi-layered ...

Vanadium/silicon interfaces produced by V thin film deposition on Si substrates were ion-beam mixed using 2 and 3 keV Ar+ ions at room temperature. The ion-beam mixing (IBM) has been studied by means of X-ray photoelectron spectroscopy, factor analysis and TRIDYN simulations. Comparison of the e...

The halide-activated pack-cementation technique was employed to fabricate a diffusion coating that is resistant both to isothermal and to cyclic oxidation in air at 650 °C on the surface of the V–4Cr–4Ti vanadium alloy that is a potential core component of future nuclear systems. A thermodyna...

We fabricated vanadium silicide (V3Si) nano-particles embedded in silicon dioxide dielectric layer and characterized their charging effect to apply a non-volatile memory device. To create the V3Si nano-particles, the first post-annealing process in N2 gas ambient by rapid thermal annealing metho...

To provide protection against corrosion at high temperatures, silicide diffusion coatings were developed for the V-4Cr-4Ti alloy, which can be used as the fuel cladding in next-generation sodium-cooled fast breeder reactors. The multilayered coatings were prepared by halide-activated pack cement...