Antiperovskite manganese nitrides Mn3Cu1−xSnxN and carbon nanotubes/Mn3Cu1−xSnxN composites were prepared by mechanical ball milling and solid state sintering. The crystal structure, microscopic morphology, thermal expansion properties and electrical conductivities of Mn3Cu1−xSnxN and CNTs/Mn3Cu...

We report high efficiency luminescence with a manganese-doped aluminum nitride red-emitting phosphor under 254 nm excitation, as well as its excellent lumen maintenance in fluorescent lamp conditions, making it a candidate replacement for the widely deployed europium-doped yttria red phosphor. S...

The negative thermal expansion (NTE) properties of the antiperovskite manganese nitrides with micron-scale, submicron-scale and nanometer-scale microstructures, respectively, were investigated using the Mn3Cu0.5Ge0.5N composition as an example. It was discovered that the NTE start temperature, N...

An air-electrode catalyst material with a hierarchically porous structure and efficient chemical composition can improve the performances of lithium–oxygen (Li–O2) batteries. In this study, hierarchically yolk–shell structured manganese oxide/manganese nitride composite powders comprising Co-...

Strong promoting effect of alkali metal amides, i.e., LiNH2, NaNH2 and KNH2, on the catalytic activity of manganese nitride (MnN) for ammonia decomposition has been demonstrated, which is evidenced by ca. 100 K drop in onset temperature and by ca. 50–60 kJ mol−1 reduction in apparent activation...

(Mn,Fe)-N series micron particles were gotten by high-energy ball milling and consequent annealing of the ferrous and the manganese nitrides powders with different Fe/Mn-N ratios. The phase structures and the magnetic properties, as well as microwave absorption properties of the milled-annealed ...

Development of metal nitride-based thin film binder-free electrodes is a rapidly emerging area of research for the development of supercapacitors. The manganese nitride (Mn3N2) binder-free thin film electrodes were prepared using DC magnetron sputtering process. X-ray diffraction and the Raman s...

A systematic study was carried out to investigate the potential of manganese nitride related materials for ammonia production. A-Mn-N (A = Fe, Co, K, Li) materials were synthesised by nitriding their oxide counterparts at low temperature using NaNH2 as a source of reactive nitrogen. The reactivi...

Here, the intellectual challenges for thermoelectric materials revolves around the strategy of point defect engineering to regulate the electrical and thermal transport nature of Mn1.06-xSnxTe (x = 0, 0.03, 0.035, 0.04, 0.045) materials. The power factor increases with substitution of Sn into th...

Using first-principles electronic structure calculations based on density functional theory (DFT), we investigate the structural, electronic and magnetic properties of the layered ternary manganese tellurides: AMnTe2 (A = K, Rb, and Cs). Calculations are accomplished within the full-potential li...

In this manuscript, the values of Faraday rotation for wavelengths between 675 and 875 nm and also Verdet constant (for magnetic field in 15 kOe) of nanocrystal and thin film forms of cadmium manganese telluride have been experimentally measured. The Verdet constant of antimagnetic elements like...

The quaternary compounds EuMnPnF (Pn = P, As, Sb) have been prepared via solid state route at 1173 K, and their crystal and electronic structures as well as magnetic and transport properties have been elucidated. These compounds belong to the widespread LaAgSO structure type and crystallize in t...

Silicon samples were implanted with up to 6E+16 cm−2 of 190 keV manganese and next treated with plasma pulses of duration about 1 μs and energy density up to 4 J cm−2. Channelled RBS spectra measured after pulse treatment reveal nearly perfect recovery of crystalline order with manganese segreg...

We report on laser synthesis of thin 30–200 nm epitaxial layers with mosaic structure of diluted magnetic semiconductors GaSb:Mn and InSb:Mn with the Curie temperature TC above 500 K and of InAs:Mn with TC no less than 77 K. The concentration of Mn was ranged from 0.02 to 0.15. In the case of I...

Thin films of the binary and ternary ferromagnetic materials MnSb and MnAs1-xSbx (0

In this work, manganese segregation in vertical Bridgman grown Mn-doped GaSb ingots has been investigated for three different growth rates. Experimental data of the Mn axial and radial distributions have been obtained and compared with the numerical analysis. Both numerical and experimental resu...

Polycrystalline ingots of gallium manganese antimonide [Ga1 − xMnxSb (0

Gallium antimonide crystals highly doped with Mn were prepared by a liquid-phase-electroepitaxy growth method. The crystals exhibited high hole concentrations up to 6×1018 cm−3. Photoluminescence (PL) and transmission techniques were used for their investigation. Spectral line-shapes typical fo...

Indium antimonide is of interest for infrared detecting and emitting devices and for magnetic field sensors. In this study, indium antimonide doped with manganese and grown by molecular beam epitaxy was investigated. Secondary ion mass spectroscopy (SIMS) was used to show that the incorporation ...

We report a simple and fast route to grow ferromagnetic manganese phosphide polycrystalline films and nanorods on GaP and on glass substrates using metalorganic vapor phase deposition. Increasing the growth temperature (≥600 °C) and growth time (≥30 min) results in nucleation of secondary MnP...