Conditions | Yield |
---|---|
In not given | 81.5% |
Conditions | Yield |
---|---|
With silica gel; potassium hydroxide at 210℃; under 11251.1 Torr; for 6h; Autoclave; Inert atmosphere; | 78.7% |
With tetrachlorosilane | |
With tetrachlorosilane |
Conditions | Yield |
---|---|
In not given SiH4 and n-propanol in presence of C3H7OLi;; | 77% |
In not given SiH4 and n-propanol in presence of C3H7OLi;; | 77% |
Conditions | Yield |
---|---|
With copper(l) chloride; silicon at 250℃; for 3h; Autoclave; | A 66% B n/a |
With tetrachlorosilane |
(C3H7O)3Si(NHNHC6H5)
titanium tetrachloride
A
(C3H7O)2Si(NHNHC6H5)2(TiCl4)2
B
tetrapropoxysilane
Conditions | Yield |
---|---|
In Petroleum ether dropwise addn. of soln. of TiCl4 in petroleum ether (40-60°C) to soln. of 1-trialkoxysilyl 2-phenylhydrazine (equimolar amts., 0 to -10°C, under dry nitrogen), ppt. filtered in a cold atm. of dry N2; washed, dried under reduced pressure; elem. anal.; | A 65% B n/a |
(C3H7O)3Si(NHNHC6H5)
tin(IV) chloride
A
(C3H7O)2Si(NHNHC6H5)2(SnCl4)2
B
tetrapropoxysilane
Conditions | Yield |
---|---|
In Petroleum ether dropwise addn. of soln. of SnCl4 in petroleum ether (40-60°C) to soln. of 1-trialkoxysilyl 2-phenylhydrazine (equimolar amts., 0 to -10°C, under dry nitrogen), ppt. filtered in a cold atm. of dry N2; washed, dried under reduced pressure; elem. anal.; | A 60% B n/a |
Conditions | Yield |
---|---|
With titanium(IV) isopropylate |
Conditions | Yield |
---|---|
With sodium bei der Destillation; | |
In not given Si(OCH3)4 and n-propanol in presence of Na;; | |
In not given Si(OCH3)4 and n-propanol in presence of Na;; |
Conditions | Yield |
---|---|
With trichlorosilane; benzene |
tetrapropoxysilane
Conditions | Yield |
---|---|
With propan-1-ol; monosilane |
Conditions | Yield |
---|---|
In benzene |
Conditions | Yield |
---|---|
In not given | |
In not given |
Conditions | Yield |
---|---|
In not given |
Conditions | Yield |
---|---|
With AlCl3 In not given refluxing of HSi(OCH2CH2CH3)3 and AlCl3 for 20 h;; |
N-phenyl-1,1,1-tripropoxysilanamine
cobalt(II) chloride
C
tetrapropoxysilane
Conditions | Yield |
---|---|
In acetonitrile N2-atmosphere; stirring (24 h, room temp.); concentration, hexane addn. (pptn.), collection (filtration), washing (hexane), drying (vac.); elem. anal.; |
N-butyl-1,1,1-tripropoxysilanamine
cobalt(II) chloride
B
tetrapropoxysilane
Conditions | Yield |
---|---|
In acetonitrile N2-atmosphere; stirring (24 h, room temp.); concentration, hexane addn. (pptn.), collection (filtration), washing (hexane), drying (vac.); elem. anal.; |
N-benzyl-1,1,1-tripropoxysilanamine
cobalt(II) chloride
C
tetrapropoxysilane
Conditions | Yield |
---|---|
In acetonitrile N2-atmosphere; stirring (24 h, room temp.); concentration, hexane addn. (pptn.), collection (filtration), washing (hexane), drying (vac.); elem. anal.; |
tetrapropoxysilane
4-(hydroxymethyl)-1-oxido-2,6,7-trioxa-1-phosphabicyclo [2.2.2] octane
Conditions | Yield |
---|---|
In diethylene glycol dimethyl ether at 140℃; Solvent; Inert atmosphere; | 85.7% |
Conditions | Yield |
---|---|
With oxygen; copper diacetate; silver carbonate In N,N-dimethyl-formamide at 145℃; for 18h; | 84% |
Conditions | Yield |
---|---|
With pyridine; ferric(III) bromide; oxygen In chlorobenzene at 130℃; for 9h; Sealed tube; | 82% |
tetrapropoxysilane
carbon dioxide
aniline
n-propyl N-phenylcarbamate
Conditions | Yield |
---|---|
With 1,10-Phenanthroline; zinc diacetate In acetonitrile at 150℃; under 37503.8 Torr; for 72h; Inert atmosphere; Autoclave; Green chemistry; chemoselective reaction; | 80% |
With 2,3,4,5,7,8,9,10-octahydropyrimido[1,2-a]azepin-1-ium acetate In acetonitrile at 150℃; under 37503.8 Torr; for 24h; Autoclave; Inert atmosphere; Ionic liquid; Green chemistry; chemoselective reaction; | 65% |
Conditions | Yield |
---|---|
With oxygen; copper diacetate; caesium carbonate In N,N-dimethyl-formamide at 145℃; under 760.051 Torr; for 18h; | 77% |
tetrapropoxysilane
o-iodo-methyl-benzoic acid
methyl-2-propoxybenzoic acid
Conditions | Yield |
---|---|
With oxygen; copper diacetate; caesium carbonate In N,N-dimethyl-formamide at 145℃; under 760.051 Torr; for 18h; | 75% |
Conditions | Yield |
---|---|
With copper diacetate; potassium carbonate In dimethyl sulfoxide at 80℃; for 3h; | 72% |
Conditions | Yield |
---|---|
With copper diacetate; potassium carbonate In dimethyl sulfoxide at 80℃; for 3h; | 66% |
Conditions | Yield |
---|---|
With 1-(diphenylphosphino)ferrocene-1-(di-tert-butylphosphino)ferrocene; palladium diacetate; sodium hydroxide In toluene for 16h; Hiyama coupling; Inert atmosphere; Microwave irradiation; Reflux; | 65% |
tetrapropoxysilane
chloro-tri-n-propoxy-silane
Conditions | Yield |
---|---|
With CH3COCl at 185°C;; | 63% |
With acetyl chloride at 185°C;; | 63% |
With CH3COCl at 185°C;; | 63% |
With acetyl chloride In not given | |
With CH3COCl In not given |
tetrapropoxysilane
Methyl phenyldiazoacetate
Conditions | Yield |
---|---|
With Rh2(R-DOSP)4 In various solvent(s) at 23℃; for 3h; | A 52% B n/a C n/a |
Conditions | Yield |
---|---|
With N,N-dimethyl-formamide at 55℃; under 760.051 Torr; for 32h; | 46% |
Conditions | Yield |
---|---|
at 185℃; |
Conditions | Yield |
---|---|
With sodium Heating; |
Conditions | Yield |
---|---|
With sodium Heating; |
Conditions | Yield |
---|---|
With sodium Heating; |
tetrapropoxysilane
dichloro-di-n-propoxy-silane
Conditions | Yield |
---|---|
With tetrachlorosilane at 160℃; for 30h; |
tetrapropoxysilane
Hexamethyldisiloxane
A
1,1,1,5,5,5-hexamethyl-3,3-bis(trimethylsiloxy)trisiloxane
B
Dipropyloxy-bis-trimethylsilyloxy-silan
Conditions | Yield |
---|---|
With Amberlyst 15 cation-exchange resin at 40℃; for 85h; |
The systematic name of Silicic acid (H4SiO4),tetrapropyl ester is tetrapropyl orthosilicate. With the CAS registry number 682-01-9, it is also named as Tetrapropoxysilane. The product's categories are Silicate; Si (Classes of Silicon Compounds); Si-O Compounds; Tetraalkoxysilanes; Crosslinkers; Crosslinking Agents; Orthosilicate. It is colorless transparent liquid which is sensitive to moisture. Additionally, this chemical should be sealed in the container which is filled with inert gas and stored in the cool and dry place.
The other characteristics of this product can be summarized as: (1)ACD/LogP: 7.23; (2)# of Rule of 5 Violations: 1; (3)ACD/LogD (pH 5.5): 7.22; (4)ACD/LogD (pH 7.4): 7.22; (5)ACD/BCF (pH 5.5): 182371.81; (6)ACD/BCF (pH 7.4): 182371.81; (7)ACD/KOC (pH 5.5): 202940.95; (8)ACD/KOC (pH 7.4): 202940.95; (9)#H bond acceptors: 4; (10)#H bond donors: 0; (11)#Freely Rotating Bonds: 12; (12)Polar Surface Area: 36.92 ?2; (13)Index of Refraction: 1.423; (14)Molar Refractivity: 73.34 cm3; (15)Molar Volume: 287.8 cm3; (16)Polarizability: 29.07×10-24 cm3; (17)Surface Tension: 25.6 dyne/cm; (18)Density: 0.918 g/cm3; (19)Flash Point: 95 °C; (20)Enthalpy of Vaporization: 44.2 kJ/mol; (21)Boiling Point: 224.3 °C at 760 mmHg; (22)Vapour Pressure: 0.137 mmHg at 25°C.
Uses of Silicic acid (H4SiO4),tetrapropyl ester: It is an important organic silicon coupling agent and crosslinking agent used in paints, coatings, silicone rubber and processing of inorganic materials.
When you are using this chemical, please be cautious about it as the following:
It is irritating to eyes, respiratory system and skin. In case of contact with eyes, rinse immediately with plenty of water and seek medical advice. If you want to contact this product, you must wear suitable protective clothing, gloves and eye/face protection.
People can use the following data to convert to the molecule structure.
1. SMILES:O(CCC)[Si](OCCC)(OCCC)OCCC
2. InChI:InChI=1/C12H28O4Si/c1-5-9-13-17(14-10-6-2,15-11-7-3)16-12-8-4/h5-12H2,1-4H3
3. InChIKey:ZQZCOBSUOFHDEE-UHFFFAOYAL
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