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Dayang Chem (Hangzhou) Co.,Ltd.

DayangChem exported this product to many countries and regions at best price. If you are looking for the material's manufacturer or supplier in China, DayangChem is your best choice. Pls contact with us freely for getting detailed product spe

Silicon

Cas:7440-21-3

Min.Order:1 Kilogram

FOB Price: $3.0

Type:Lab/Research institutions

inquiry

Hangzhou Dingyan Chem Co., Ltd

Items Standard Result Appearance gray powder Complies Particle size 1.58um Complies

high purity 7440-21-3 silicon

Cas:7440-21-3

Min.Order:1 Kilogram

FOB Price: $1.9 / 2.5

Type:Trading Company

inquiry

Simagchem Corporation

Welcome to Simagchem, your partner in China as a premier supply of bulk specialty chemicals for industry and life science. We introduce experienced quality product and exceptional JIT service with instant market intelligence in China to benefit our

High quality Silicon 99.99%

Cas:7440-21-3

Min.Order:1 Kilogram

Negotiable

Type:Manufacturers

inquiry

Henan Allgreen Chemical Co.,Ltd

T he company has advanced technology, as well as a large number of excellent R & D team, to provide customers from the grams to one hundred kilograms and tons of high-quality products, competitive prices and quality service Appearance:white

SILICON

Cas:7440-21-3

Min.Order:1 Kilogram

Negotiable

Type:Manufacturers

inquiry

Ality Chemical Corporation

The above product is Ality Chemical's strong item with best price, good quality and fast supply. Ality Chemical has been focusing on the research and production of this field for over 14 years. At the same time, we are always committed to providi

Factory Supply Silicon

Cas:7440-21-3

Min.Order:1

Negotiable

Type:Other

inquiry

Chemwill Asia Co., Ltd.

Our main production base is located in Xuzhou industry park. We are certified both to the ISO 9001 and ISO 14001 Standards, have a safety management system in place.Our R&D team masters core technology for process-design of target building block

Silicon

Cas:7440-21-3

Min.Order:5 Kiloliter

FOB Price: $1.2 / 5.0

Type:Manufacturers

inquiry

Changchun Artel lmport and Export trade company

Product Detail Minimum Order Qty. 10 Gram

98%-99.9% Silicon 7440-21-3 CAS NO.7440-21-3

Cas:7440-21-3

Min.Order:10 Gram

Negotiable

Type:Trading Company

inquiry

Lonwin Chemical Group Limited

Silicon CAS: 7440-21-3 Superiority mp 1410 °c(lit.) bp 2355 °c(lit.) density 2.33 g/ml at 25 °c(lit.) storage temp. flammables area form powder water solubility ins

Factory supply Silicon

Cas:7440-21-3

Min.Order:1 Kilogram

Negotiable

Type:Other

inquiry

Hangzhou Keyingchem Co.,Ltd

Hangzhou KeyingChem Co., Ltd. exported this product to many countries and regions at best price. If you are looking for the material’s manufacturer or supplier in China, KeyingChem is your best choice. Pls contact with us freely for getting det

Silicon

Cas:7440-21-3

Min.Order:0 Metric Ton

Negotiable

Type:Lab/Research institutions

inquiry

SHANGHAI T&W PHARMACEUTICAL CO., LTD.

A substitute for perfluorooctanoic acid, mainly used as a surfactant, dispersant, additive, etc Appearance:White solid or Colorless liquid Purity:99.3 % We will ship the goods in a timely manner as required We can provide relevant documents acc

Silicon

Cas:7440-21-3

Min.Order:4 Kilogram

Negotiable

Type:Lab/Research institutions

inquiry

Zibo Hangyu Biotechnology Development Co., Ltd

Zibo Hangyu Biotechnology Development Co., Ltd is a leading manufacturer and supplier of chemicals in China. We develop produce and distribute high quality pharmaceuticals, intermediates, special chemicals and OLED intermediates and other fine chemi

High quality Silicon

Cas:7440-21-3

Min.Order:10 Gram

FOB Price: $100.0

Type:Lab/Research institutions

inquiry

HANGZHOU YUNUO CHEMICAL CO.,LTD

Superior quality, moderate price & quick delivery. Appearance:grey lustrous solid or grey powder Storage:Stored in cool, dry and ventilation place; Away from fire and heat Package:5Kg/bag, 1MT/bag or as your requirement Application:Is a raw mat

Silicon

Cas:7440-21-3

Min.Order:1 Kilogram

Negotiable

Type:Trading Company

inquiry

Henan Tianfu Chemical Co., Ltd.

Our advantage:Our company was built in 2009 with an ISO certificate.In the past 5 years, we have grown up as a famous fine chemicals supplier in China and we had established stable business relationships with Samsung,LG,Merck,Thermo Fisher Scient

TIANFU-CHEM Silicon

Cas:7440-21-3

Min.Order:1 Kilogram

Negotiable

Type:Lab/Research institutions

inquiry

Greenutra Resource Inc

SiliconAppearance:solid or liquid Storage:in sealed air resistant place Package:drum and bag Application:for pharma use Transportation:by sea or air

Silicon

Cas:7440-21-3

Min.Order:0

Negotiable

Type:Trading Company

inquiry

Kono Chem Co.,Ltd

high purity lowest priceAppearance:solid or liquid Storage:in sealed air resistant place Package:drum and bag Application:for pharma use Transportation:by sea or air Port:Beijing or Guangzhou

Silicon

Cas:7440-21-3

Min.Order:0

Negotiable

Type:Other

inquiry

Zhuozhou Wenxi import and Export Co., Ltd

Product Description Description & Specification Category Pharmaceutical Raw Materials, Fine Chemicals, Bulk drug Standard Medical standard

factory directly supply CAS 7440-21-3 with competitive price

Cas:7440-21-3

Min.Order:1 Kilogram

FOB Price: $112.0

Type:Trading Company

inquiry

Antimex Chemical Limied

Ansciep Chemical is a professional enterprise manufacturing and distributing fine chemicals and speciality chemicals. We have been dedicated to heterocycle compounds and phenyl rings for tens of years. This is our mature product for export. Our quali

Silicon

Cas:7440-21-3

Min.Order:0

Negotiable

Type:Lab/Research institutions

inquiry

Hangzhou Ocean Chemical Co., Ltd.

Ocean inorganic department is a professional supplier and exporter engaging in inorganic chemical materials and metal organic compounds. Over the past years, our company is committed to improving the product quality and developing new products, in or

Silicon

Cas:7440-21-3

Min.Order:0

Negotiable

Type:Lab/Research institutions

inquiry

Xiamen AmoyChem Co.,Ltd

Amoychem is committed to providing the top-quality chemical products and services Internationally. We offer our customers with friendly, professional service and reliable, high performance products that have been manufactured according to the accredi

Silicon 99.99%

Cas:7440-21-3

Min.Order:0

Negotiable

Type:Other

inquiry

Hubei Langyou International Trading Co., Ltd

silicon atom/silicon powder/Nano-grade silicon atom 7440-21-3 Application:silicon atom/silicon powder/Nano-grade silicon atom 7440-21-3

silicon atom/silicon powder/Nano-grade silicon atom 7440-21-3

Cas:7440-21-3

Min.Order:0

Negotiable

Type:Other

inquiry

Hangzhou ZeErRui Chemical Co., Ltd.

Hangzhou ZeErRui Chemical Co., Ltd. located in Lingang industrial areas, our plant covers an area of 6000 square meters.ZeErRui dedicated to the development, production and marketing of chemicals. We have earned ourselves a good reputation at home an

Silicon manufacture

Cas:7440-21-3

Min.Order:0

Negotiable

Type:Lab/Research institutions

inquiry

Hunan Longxianng Runhui Trading Co.,Ltd

silicon atom/silicon powder/Nano-grade silicon atom 7440-21-3Appearance:gray powder Storage:Normal temperature, sealed, cool, ventilated and dry environment Package:according to the clients requirement Application:Metal powder Transportation:By expre

silicon atom/silicon powder/Nano-grade silicon atom 7440-21-3

Cas:7440-21-3

Min.Order:0

Negotiable

Type:Lab/Research institutions

inquiry

Beantown Chemical

in stock Application:7440-21-3

Silicon powder, crystalline, -100+200 mesh, 99.99% trace metals basis

Cas:7440-21-3

Min.Order:0

Negotiable

Type:Trading Company

inquiry

HWRK Chem

in store Package:1kg Application:Organic Chemicals

Silicon powder

Cas:7440-21-3

Min.Order:0

Negotiable

Type:Trading Company

inquiry

Amadis Chemical Co., Ltd.

1.Professional synthesis laboratory and production base. 2.Strong synthesis team and service team. 3.Professional data management system. 4.We provide the professional test date and product information ,ex. HNMR ,CNMR,FNMR, HPLC/G

Amadis Chemical offer CAS#7440-21-3;CAT#A851427

Cas:7440-21-3

Min.Order:10 Milligram

Negotiable

Type:Lab/Research institutions

inquiry

HENAN SUNLAKE ENTERPRISE CORPORATION

Silicon

Cas:7440-21-3

Min.Order:1 Kilogram

Negotiable

Type:Trading Company

inquiry

Shaanxi Mingqi Chemical Co., Ltd

Known for its best quality and competitve price, this chemicals we offered is widely appreciated by our customers. Our advantages: 1, High quality with competitive price: 1) Standard:BP/USP/EP/Enterprise standard 2) All Purity≥99% 3) We

Silicon in stock factory

Cas:7440-21-3

Min.Order:1 Kilogram

Negotiable

Type:Lab/Research institutions

inquiry

Xi'an Galaxy Chemicals CO., Ltd

Description Silicon Metal processed by excellent industrial silicon and including full varieties. Used in electro, metallurgy and chemical industry. It is silver gray or dark gray powder with metallic luster, which be of high melting point,

98%-99.9% Silicon 7440-21-3

Cas:7440-21-3

Min.Order:1 Metric Ton

FOB Price: $1650.0

Type:Trading Company

inquiry

Shaanxi Sinuote Biotech Co.,Ltd

1.Best quality 2.Competitive price 3.Fast Delivery 4.Excellent service. 5.Free sample(10-20g or enough to detection) and Unconditional assume response 6.Packaging: 1kg with double plastic container inside/Aluminum foil bag outside 25 kg with

Nettle Extract Nettle Plant Extract Nettle Root Extract

Cas:7440-21-3

Min.Order:5 Kilogram

Negotiable

Type:Trading Company

inquiry

Shandong Hanxinzun New Material Co., Ltd.

Product Description This product is grinded from silicon metal blocks and are gray-colored and have metallic luster. It is widely used in refractory materials, basic raw materials of silicone, integrated circuit components, powder metallurgy,

Supply high purity 325 mesh silicon metal for chemical use

Cas:7440-21-3

Min.Order:10 Metric Ton

FOB Price: $1480.0 / 1500.0

Type:Manufacturers

inquiry

Synthetic route

Dichlorosilane
4109-96-0

Dichlorosilane

silicon
7440-21-3

silicon

Conditions
ConditionsYield
Prepd. by laser chemical vapor pptn. at atmospheric pressure.;100%
In neat (no solvent) chemical vapor deposition with a mixt. of SiH2Cl2 and H2;
With hydrogen chemical vapor deposition (hot-wall reactor, basic pressure 10 or 76 Torr, 1223 K);
trichlorosilane
10025-78-2

trichlorosilane

silicon
7440-21-3

silicon

Conditions
ConditionsYield
Stage #1: trichlorosilane under 3.75038 Torr; for 6h; Pulsed microwave radiation (25-50W);
Stage #2: With hydrogen at 900℃;
96.7%
With hydrogen chemical vapor deposition (8% SiHCl3 in H2, 1100°C);
With hydrogen chemical vapor deposition (hot-wall reactor, basic pressure 10 or 76 Torr, 1223 K);
Conditions
ConditionsYield
With magnesium oxide; magnesium In neat (no solvent) mixt. of 180 parts SiO2, 144 parts Mg and 81 parts MgO, covered with a layer of Mg in a warmed up crucible, heating at red heat in a electric furnace, begin of the react. after 2-3 min. with strong glowing, best yields with a SiO2 grainsize of 0.14mm;; treatment of the reactionproduct with HCl, H2SO4 and HF one after another, Si powder of 99.09-99.60% purity;;92.7%
With Mg; MgO In neat (no solvent) mixt. of 180 parts SiO2, 144 parts Mg and 81 parts MgO, covered with a layer of Mg in a warmed up crucible, heating at red heat in a electric furnace, begin of the react. after 2-3 min. with strong glowing, best yields with a SiO2 grainsize of 0.14mm;; treatment of the reactionproduct with HCl, H2SO4 and HF one after another, Si powder of 99.09-99.60% purity;;92.7%
With magnesium Inert atmosphere; Schlenk technique;46.7%
tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

silicon
7440-21-3

silicon

Conditions
ConditionsYield
With hydrogen at 700℃; under 15.0015 Torr; Product distribution / selectivity; Microwave radiation (200W);60%
Product distribution / selectivity;
With KBr or KI In neat (no solvent) byproducts: KCl, Br; uncomplete reaction of SiCl4 with KBr or KI at 300-400 °C;;
methane
34557-54-5

methane

monosilane
7440-21-3

monosilane

silicon carbide

silicon carbide

B

silicon
7440-21-3

silicon

Conditions
ConditionsYield
With H2 In neat (no solvent) chemical vapour deposition of CH4 (4.0 mol%), H2 and SiH4 (2.0 mol%) gases in reaction-sintered SiC tube within mullite tube in resistance furnace, total gas flow rate 2.7E-5 m**3/sec, total gas pressure 0.1 MPa, 1623K; transmission electron microscopy, pycnometry, IR spectroscopy, X-ray diffractometry;A 23%
B n/a
With H2 In neat (no solvent) chemical vapour deposition of CH4 (7.2 mol%), H2 and SiH4 (3.6 mol%) gases in reaction-sintered SiC tube within mullite tube in resistance furnace, total gas flow rate 2.7E-5 m**3/sec, total gas pressure 0.1 MPa, 1623K; transmission electron microscopy, pycnometry, IR spectroscopy, X-ray diffractometry;A 19%
B n/a
With H2 In neat (no solvent) chemical vapour deposition of CH4 (4.0 mol%), H2 and SiH4 (2.0 mol%) gases in reaction-sintered SiC tube within mullite tube in resistance furnace, total gas flow rate 2.7E-5 m**3/sec, total gas pressure 0.1 MPa, 1573K; transmission electron microscopy, pycnometry, IR spectroscopy, X-ray diffractometry;A 14%
B n/a
sodium metasilicate nonahydrate

sodium metasilicate nonahydrate

magnesium
7439-95-4

magnesium

A

magnesium hydroxide

magnesium hydroxide

B

hydrogen
1333-74-0

hydrogen

C

magnesium oxide

magnesium oxide

D

sodium hydroxide
1310-73-2

sodium hydroxide

E

silicon
7440-21-3

silicon

Conditions
ConditionsYield
at 200℃; under 116262 Torr; for 10h; Temperature; Autoclave;A n/a
B n/a
C n/a
D n/a
E 10%
monosilane
7440-21-3

monosilane

A

trisilane
7783-26-8

trisilane

B

disilane

disilane

C

silicon
7440-21-3

silicon

Conditions
ConditionsYield
In gaseous matrix byproducts: H2; other Radiation; photolysis of pure SiH4 or a 37% mixture with N2 or Ar or H2 or He (total pressure = 80 Torr) in stainless steel cell by cw CO2 laser (945.98 cm**-1=IR), strong luminescence accompanies the react.; traces of higher silanes (gases) and solid hydrogenated silicon also present, H2 or He inhibit the react.;A 0%
B 2%
C n/a
molybdenium disilicate

molybdenium disilicate

A

pentamolybdenum trisilicide

pentamolybdenum trisilicide

B

silicon
7440-21-3

silicon

Conditions
ConditionsYield
In neat (no solvent) evapn. in N2-plasma-flow; detd. by X-ray diffraction;A 1%
B 1%
tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

A

silicon, oxidized

silicon, oxidized

B

silicon
7440-21-3

silicon

Conditions
ConditionsYield
Product distribution / selectivity;
monosilane
7440-21-3

monosilane

silicon
7440-21-3

silicon

Conditions
ConditionsYield
at 1000℃; under 810.081 Torr; Gas phase (argon/H2 or argon alone);
With diborane at 1000℃; under 810.081 Torr; Gas phase (H2/argon);
With tri-tert-butyl phosphine at 1000℃; under 810.081 Torr; Gas phase (H2/argon);
calcium silicide

calcium silicide

ammonium chloride

ammonium chloride

A

silicon nitride

silicon nitride

B

silicon
7440-21-3

silicon

Conditions
ConditionsYield
In neat (no solvent) High Pressure; excessive NH4Cl and CaSi2 heated at 600 °C for 10 h in autoclave;
silicon carbide

silicon carbide

aluminum oxide
1333-84-2, 1344-28-1

aluminum oxide

A

silicon monoxide

silicon monoxide

mullite

mullite

C

carbon monoxide
201230-82-2

carbon monoxide

D

silicon
7440-21-3

silicon

Conditions
ConditionsYield
In melt mixing of Al2O3 and SiO2 in weight ratio 69:31 in C2H5OH using a ball mill for 1 h, drying at 75°C in an oven, infiltration into SiC preform in temp. range from 1830°C to 1850°C in BN crucible with a lid for 10 min; gas evolution, identification by XRD;
aluminum oxide
1333-84-2, 1344-28-1

aluminum oxide

silica

silica

silicon
7440-21-3

silicon

Conditions
ConditionsYield
With silicon In neat (no solvent) reaction in a Rh crucible in a high vacuum at 1300-1400 °C, small amount of Si by use of a small exceed of Si after vaporization of the other reaction educts, further product (beside Si): a glassy, amorphous yellow-brown black substance;;
With Si In neat (no solvent) reaction in a Rh crucible in a high vacuum at 1300-1400 °C, small amount of Si by use of a small exceed of Si after vaporization of the other reaction educts, further product (beside Si): a glassy, amorphous yellow-brown black substance;;
trisilane
7783-26-8

trisilane

silicon
7440-21-3

silicon

Conditions
ConditionsYield
cobalt In toluene High Pressure; Ti reactor sealed in N2 filled glove box connected to HPLC pump, filled O2 free toluene; Si wafer placed in; 3.4 MPa, heated to 350 or 400 or 450°C; trisilane in toluene injected; seed nanocrystals of Co; 10.3MPa, 10 min; reactor immersed in ice water, cooled to room temp.; substrate (Si wafer) removed; SEM; TEM;;
silicon doted with sulfur

silicon doted with sulfur

bromine
7726-95-6

bromine

silicon
7440-21-3

silicon

Conditions
ConditionsYield
gold mixt. heating in sealed tube, according to A. V. Sandulova et al., Patent USSR No. 160829, prior. 06.07.1962, Bull. Izobretenii i Otkritii, No. 5 (1964): R. S. Wagner et al., J. appl. Phys. 35, 9 (1964) 2993;
disiloxane
107-46-0

disiloxane

silicon
7440-21-3

silicon

Conditions
ConditionsYield
In neat (no solvent) incineration of disiloxane;; formation of amorphous Si;;
With air In neat (no solvent) combustion in a flame with formation of a white smoke;;
potassium chromate

potassium chromate

potassium hexafluorosilicate

potassium hexafluorosilicate

A

chromium disilicide

chromium disilicide

B

silicon
7440-21-3

silicon

Conditions
ConditionsYield
With potassium fluoride; potassium chloride In melt Electrochem. Process; anode: graphite crucible with melt (KCl, 25% KF, 1% K2SiF6, K2CrO4), cathode: W rod, reference electrode: Pt wire, 900°C, U=3-4 V, 0.5 or1.0% K2CrO4 (t=60 min); product removing with cathode, mixture crushing, leaching (water and aq.H2SO4 at 50-60°C), solid residue sepn. and drying (100-105.degre e.C);
potassium chromate

potassium chromate

potassium hexafluorosilicate

potassium hexafluorosilicate

A

chromium silicide

chromium silicide

B

silicon
7440-21-3

silicon

Conditions
ConditionsYield
With potassium fluoride; potassium chloride In melt Electrochem. Process; anode: graphite crucible with melt (KCl, 25% KF, 1% K2SiF6, K2CrO4), cathode: W rod, reference electrode: Pt wire, 900°C, U=3-4 V, 0.5% K2CrO4 (t=10 min) or 1.0% K2CrO4 (t=15 min); product removing with cathode, mixture crushing, leaching (water and aq.H2SO4 at 50-60°C), solid residue sepn. and drying (100-105.degre e.C);
sodium silicate

sodium silicate

sodium fluoride

sodium fluoride

A

sodium
7440-23-5

sodium

B

silicon
7440-21-3

silicon

Conditions
ConditionsYield
In melt Electrolysis;
tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

potassium bromide
7558-02-3

potassium bromide

A

bromine
7726-95-6

bromine

B

silicon
7440-21-3

silicon

Conditions
ConditionsYield
byproducts: KCl; heated for some days at 400 °C in a closed tube;
tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

potassium bromide
7558-02-3

potassium bromide

silicon
7440-21-3

silicon

Conditions
ConditionsYield
In neat (no solvent) byproducts: KCl, Br2; slight reaction only on heating in a melting tube at 390-400 °C for a period of 75 hours;;
In neat (no solvent) byproducts: KCl, Br2; slight reaction only on heating in a melting tube at 390-400 °C for a period of 75 hours;;
silicon carbide

silicon carbide

A

silicon monoxide

silicon monoxide

B

pyrographite
7440-44-0

pyrographite

C

silicon
7440-21-3

silicon

Conditions
ConditionsYield
With carbon monoxide In neat (no solvent) Kinetics; in a hermetic furnace with a graphite heater in an atmosphere of CO; SiC is placed in graphite crucibles with lids and kept at 2270-2670 K for 900, 1800, 2700 and 3600 s; cooled samples are weighed and investigated by chem. anal. and IR-spectrometry;
silicon carbide

silicon carbide

silicon
7440-21-3

silicon

Conditions
ConditionsYield
With aluminum oxide In neat (no solvent) byproducts: CO, Al-Si-alloy;
In neat (no solvent)
silicon carbide

silicon carbide

graphite

graphite

B

silicon
7440-21-3

silicon

Conditions
ConditionsYield
In neat (no solvent) decompn. at about 2500K;;
In neat (no solvent) decompn. in an electric furnace at various temp.;;
In neat (no solvent)
In neat (no solvent)
silicon carbide

silicon carbide

A

pyrographite
7440-44-0

pyrographite

B

silicon
7440-21-3

silicon

Conditions
ConditionsYield
In neat (no solvent) decompn. at 1 atm. above 2100°C;;
In neat (no solvent) decompn. at 1500-1600°C in high-vac.;;
In neat (no solvent) Kinetics; in a hermetic furnace with a graphite heater in an atmosphere of He; SiC is placed in graphite crucibles with lids and kept at 2770 K for 900, 1800, 2700 and 3600 s; cooled samples are weighed and investigated by chem. anal. and IR-spectrometry;
In neat (no solvent) decompn. at 1500-1600°C in high-vac.;;
In neat (no solvent) decompn. at 1 atm. above 2100°C;;
silicon carbide

silicon carbide

A

silicon monoxide

silicon monoxide

B

silicon
7440-21-3

silicon

Conditions
ConditionsYield
In neat (no solvent) reaction at 2000 °C;;
In neat (no solvent) at 2000°C;;
In neat (no solvent) reaction at 2000 °C;;
In neat (no solvent) reaction at 2000 °C;;
In neat (no solvent)
lithium
7439-93-2

lithium

aluminium
7429-90-5

aluminium

silicon
7440-21-3

silicon

lithium aluminium silicide

lithium aluminium silicide

Conditions
ConditionsYield
In melt in a tantalum tube weld-seald under Ar and protected from air by a silica jacket sealed under vac.; mixt. Li, Al, Si (15:3:6 mol) heated at 1223K, 10 h in vertical furnace and shaken several times;; cooled at rate of 6 K h**-1; elem. anal.;100%
lithium
7439-93-2

lithium

barium
7440-39-3

barium

silicon
7440-21-3

silicon

4Ba(2+)*2Li(1+)*Si6(10-)=Ba4Li2Si6

4Ba(2+)*2Li(1+)*Si6(10-)=Ba4Li2Si6

Conditions
ConditionsYield
In neat (no solvent) Ar atm.; molar ratio Ba:Li:Si 4:2.1:6, 1000°C; cooling (400°C), annealing;100%
strontium(II) hydride

strontium(II) hydride

silicon
7440-21-3

silicon

Sr5Si3H(x)

Sr5Si3H(x)

Conditions
ConditionsYield
In neat (no solvent, solid phase) placing of SrH2 and Si in welded Ta containers, heating within evacuated, well-flamed, sealed silica jacket at 1150°C for 6 h, cooling to650°C with rate of 10-12°C/h;100%
lanthanum
7439-91-0

lanthanum

lanthanum(III) bromide
13536-79-3

lanthanum(III) bromide

silicon
7440-21-3

silicon

La3Br3Si

La3Br3Si

Conditions
ConditionsYield
In neat (no solvent) under Ar, stoich. amt. of starting materials were heated at 1150 °C for 6 days, Ta-tube in an evacuated silica ampoule;100%
lanthanum
7439-91-0

lanthanum

lanthanum(III) iodide
13813-22-4

lanthanum(III) iodide

silicon
7440-21-3

silicon

La3I3Si

La3I3Si

Conditions
ConditionsYield
In neat (no solvent) under Ar, stoich. amt. of starting materials were heated at 1150 °C for 2 days, Ta-tube in an evacuated silica ampoule;100%
lead(II) bromide

lead(II) bromide

methylammonium bromide
6876-37-5

methylammonium bromide

silicon
7440-21-3

silicon

Reaxys ID: 28470675

Reaxys ID: 28470675

Conditions
ConditionsYield
In dichloromethane; N,N-dimethyl-formamide100%
yttrium(III) oxysulfide

yttrium(III) oxysulfide

terbium dioxosulfide

terbium dioxosulfide

sulfur
7704-34-9

sulfur

silicon
7440-21-3

silicon

(Y0.98Tb0.02)4S3(Si2O7)

(Y0.98Tb0.02)4S3(Si2O7)

Conditions
ConditionsYield
With cesium chloride at 1100℃; for 12h; Milling; Sealed tube;100%
yttrium(III) oxysulfide

yttrium(III) oxysulfide

terbium dioxosulfide

terbium dioxosulfide

sulfur
7704-34-9

sulfur

silicon
7440-21-3

silicon

(Y0.96Tb0.04)4S3(Si2O7)

(Y0.96Tb0.04)4S3(Si2O7)

Conditions
ConditionsYield
With cesium chloride at 1100℃; for 12h; Milling; Sealed tube;100%
yttrium(III) oxysulfide

yttrium(III) oxysulfide

europium oxysulfide

europium oxysulfide

sulfur
7704-34-9

sulfur

silicon
7440-21-3

silicon

(Y0.99Eu0.01)4S3(Si2O7)

(Y0.99Eu0.01)4S3(Si2O7)

Conditions
ConditionsYield
With cesium chloride at 1100℃; for 12h; Milling; Sealed tube;100%
yttrium(III) oxysulfide

yttrium(III) oxysulfide

europium oxysulfide

europium oxysulfide

sulfur
7704-34-9

sulfur

silicon
7440-21-3

silicon

(Y0.96Eu0.04)4S3(Si2O7)

(Y0.96Eu0.04)4S3(Si2O7)

Conditions
ConditionsYield
With cesium chloride at 1100℃; for 12h; Milling; Sealed tube;100%
yttrium(III) oxysulfide

yttrium(III) oxysulfide

europium oxysulfide

europium oxysulfide

sulfur
7704-34-9

sulfur

silicon
7440-21-3

silicon

(Y0.90Eu0.10)4S3(Si2O7)

(Y0.90Eu0.10)4S3(Si2O7)

Conditions
ConditionsYield
With cesium chloride at 1100℃; for 12h; Milling; Sealed tube;100%
yttrium(III) oxysulfide

yttrium(III) oxysulfide

sulfur
7704-34-9

sulfur

silicon
7440-21-3

silicon

Y4S3(Si2O7)

Y4S3(Si2O7)

Conditions
ConditionsYield
With cesium chloride at 1100℃; for 12h; Milling; Sealed tube;100%
yttrium(III) oxide

yttrium(III) oxide

selenium
7782-49-2

selenium

silicon
7440-21-3

silicon

Y2SiO4Se

Y2SiO4Se

Conditions
ConditionsYield
With cesium chloride In acetone at 1100℃; under 0.01 Torr; for 12h; Sealed tube;100%
methane
34557-54-5

methane

silicon
7440-21-3

silicon

silicon carbide

silicon carbide

Conditions
ConditionsYield
In gaseous matrix byproducts: graphite; generation of SiO by Heating Si + SiO2 in Ar-stream, mixing with CH4 in H2-stream at 1500-1560°C, pptn. of SiC in cooler reactor zone; X-ray diffraction, electron microscopy, EPMA, EELS;99%
hafnium

hafnium

chromium
7440-47-3

chromium

silicon
7440-21-3

silicon

Hf2Cr4Si5

Hf2Cr4Si5

Conditions
ConditionsYield
In melt Hf, Cr, and Si were pressed into pellets and arc-melted under Ar; X-ray powder diffraction;99%
titanium
7440-32-6

titanium

chromium
7440-47-3

chromium

silicon
7440-21-3

silicon

Ti2Cr4Si5

Ti2Cr4Si5

Conditions
ConditionsYield
In melt Ti, Cr, and Si were pressed into pellets and arc-melted under Ar; X-ray powder diffraction;99%
zirconium
7440-67-7

zirconium

chromium
7440-47-3

chromium

silicon
7440-21-3

silicon

Zr2Cr4Si5

Zr2Cr4Si5

Conditions
ConditionsYield
In melt Zr, Cr, and Si were pressed into pellets and arc-melted under Ar; X-ray powder diffraction;99%
chlorine
7782-50-5

chlorine

silicon
7440-21-3

silicon

tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

Conditions
ConditionsYield
In neat (no solvent) heating of amorphous Si in a Cl2 stream at moderate red heat;;98%
In neat (no solvent) reaction of Si in Cl2 atmosphere with inflammation on heating;;
moderate heating;;
cerium
7440-45-1

cerium

magnesium
7439-95-4

magnesium

silicon
7440-21-3

silicon

Ce6Mg23Si

Ce6Mg23Si

Conditions
ConditionsYield
at 700 - 1100℃; for 336h; Sealed tube; Inert atmosphere;98%
silicon
7440-21-3

silicon

dimethylsilicon dichloride
75-78-5

dimethylsilicon dichloride

Conditions
ConditionsYield
With methylene chloride; copper In neat (no solvent) vibrating of the Si-Cu powder;;97%
With methylene chloride; copper In neat (no solvent) CH3Cl and Si-Cu/Cu-oxide at 300-375°C;;82.4%
With methylene chloride; copper In neat (no solvent) CH3Cl and Si purified by treatment with strong acids;;
With methylene chloride In neat (no solvent)
With CH3Cl In neat (no solvent)
nitrogen
7727-37-9

nitrogen

silicon
7440-21-3

silicon

silicon nitride

silicon nitride

Conditions
ConditionsYield
In neat (no solvent) at 1250°C for 20 min; XRD;96%
In neat (no solvent) at 1150°C for 100 min; XRD;95%
In gaseous matrix (H2-He-N2 4%-25%-71%), 1400°C, 15 h;59.9%
ethanol
64-17-5

ethanol

silicon
7440-21-3

silicon

A

tetraethoxy orthosilicate
78-10-4

tetraethoxy orthosilicate

B

Triethoxysilane
998-30-1

Triethoxysilane

Conditions
ConditionsYield
With sebaconitrile; copper(I) oxide In NALKYLENE 500 at 200℃; for 14h; Product distribution / selectivity;A 3.32%
B 95.7%
With octanedinitrile; copper(I) oxide In NALKYLENE 500 at 200℃; for 14 - 21h; Product distribution / selectivity;A 3.45%
B 94.18%
With hexanedinitrile; copper(I) oxide In NALKYLENE 500 at 200℃; for 14h; Product distribution / selectivity;A 5.26%
B 93.38%
phosphorous

phosphorous

silicon
7440-21-3

silicon

silicon monophosphide

silicon monophosphide

Conditions
ConditionsYield
In neat (no solvent) heating Si (in tube of ceramic material) to 1180°C and red P to 400°C;;95%
In neat (no solvent) heating Si (in tube of ceramic material) to 1180°C and red P to 400°C;;95%
vanadia

vanadia

silicon
7440-21-3

silicon

vanadium silicide

vanadium silicide

Conditions
ConditionsYield
In neat (no solvent) byproducts: SiO; powder mixt. cold pressed, than heat-treated in a H2 flow (4KPa) at temp. increasing slowly from 1200 to 1400°C for 2h, kept at 1450-1500°C for 2h;95%
europium dihydride

europium dihydride

silicon
7440-21-3

silicon

Eu5Si3H(x)

Eu5Si3H(x)

Conditions
ConditionsYield
In neat (no solvent, solid phase) placing of EuH2 and Si in welded Ta containers, heating within evacuated, well-flamed, sealed silica jacket at 1150°C for 6 h, cooling to650°C with rate of 10-12°C/h;95%
calcium hydride
7789-78-8

calcium hydride

silicon
7440-21-3

silicon

Ca5Si3H(x)

Ca5Si3H(x)

Conditions
ConditionsYield
In neat (no solvent, solid phase) placing of CaH2 and Si in welded Ta containers, heating within evacuated, well-flamed, sealed silica jacket at 1150°C for 6 h, cooling to650°C with rate of 10-12°C/h;95%
barium hydride

barium hydride

silicon
7440-21-3

silicon

Ba5Si3H(x)

Ba5Si3H(x)

Conditions
ConditionsYield
In neat (no solvent, solid phase) placing of BaH2 and Si in welded Ta containers, heating within evacuated, well-flamed, sealed silica jacket at 1150°C for 6 h, cooling to650°C with rate of 10-12°C/h;95%
strontium

strontium

silicon
7440-21-3

silicon

Sr5Si3

Sr5Si3

Conditions
ConditionsYield
In neat (no solvent, solid phase) placing of Sr and Si in welded Ta containers, heating under vac. at 1300°C for 6 h, cooling to 600°C with rate of 8°C/h;95%
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