Conditions | Yield |
---|---|
Prepd. by laser chemical vapor pptn. at atmospheric pressure.; | 100% |
In neat (no solvent) chemical vapor deposition with a mixt. of SiH2Cl2 and H2; | |
With hydrogen chemical vapor deposition (hot-wall reactor, basic pressure 10 or 76 Torr, 1223 K); |
trichlorosilane
silicon
Conditions | Yield |
---|---|
Stage #1: trichlorosilane under 3.75038 Torr; for 6h; Pulsed microwave radiation (25-50W); Stage #2: With hydrogen at 900℃; | 96.7% |
With hydrogen chemical vapor deposition (8% SiHCl3 in H2, 1100°C); | |
With hydrogen chemical vapor deposition (hot-wall reactor, basic pressure 10 or 76 Torr, 1223 K); |
silica gel
silicon
Conditions | Yield |
---|---|
With magnesium oxide; magnesium In neat (no solvent) mixt. of 180 parts SiO2, 144 parts Mg and 81 parts MgO, covered with a layer of Mg in a warmed up crucible, heating at red heat in a electric furnace, begin of the react. after 2-3 min. with strong glowing, best yields with a SiO2 grainsize of 0.14mm;; treatment of the reactionproduct with HCl, H2SO4 and HF one after another, Si powder of 99.09-99.60% purity;; | 92.7% |
With Mg; MgO In neat (no solvent) mixt. of 180 parts SiO2, 144 parts Mg and 81 parts MgO, covered with a layer of Mg in a warmed up crucible, heating at red heat in a electric furnace, begin of the react. after 2-3 min. with strong glowing, best yields with a SiO2 grainsize of 0.14mm;; treatment of the reactionproduct with HCl, H2SO4 and HF one after another, Si powder of 99.09-99.60% purity;; | 92.7% |
With magnesium Inert atmosphere; Schlenk technique; | 46.7% |
tetrachlorosilane
silicon
Conditions | Yield |
---|---|
With hydrogen at 700℃; under 15.0015 Torr; Product distribution / selectivity; Microwave radiation (200W); | 60% |
Product distribution / selectivity; | |
With KBr or KI In neat (no solvent) byproducts: KCl, Br; uncomplete reaction of SiCl4 with KBr or KI at 300-400 °C;; |
Conditions | Yield |
---|---|
With H2 In neat (no solvent) chemical vapour deposition of CH4 (4.0 mol%), H2 and SiH4 (2.0 mol%) gases in reaction-sintered SiC tube within mullite tube in resistance furnace, total gas flow rate 2.7E-5 m**3/sec, total gas pressure 0.1 MPa, 1623K; transmission electron microscopy, pycnometry, IR spectroscopy, X-ray diffractometry; | A 23% B n/a |
With H2 In neat (no solvent) chemical vapour deposition of CH4 (7.2 mol%), H2 and SiH4 (3.6 mol%) gases in reaction-sintered SiC tube within mullite tube in resistance furnace, total gas flow rate 2.7E-5 m**3/sec, total gas pressure 0.1 MPa, 1623K; transmission electron microscopy, pycnometry, IR spectroscopy, X-ray diffractometry; | A 19% B n/a |
With H2 In neat (no solvent) chemical vapour deposition of CH4 (4.0 mol%), H2 and SiH4 (2.0 mol%) gases in reaction-sintered SiC tube within mullite tube in resistance furnace, total gas flow rate 2.7E-5 m**3/sec, total gas pressure 0.1 MPa, 1573K; transmission electron microscopy, pycnometry, IR spectroscopy, X-ray diffractometry; | A 14% B n/a |
Conditions | Yield |
---|---|
at 200℃; under 116262 Torr; for 10h; Temperature; Autoclave; | A n/a B n/a C n/a D n/a E 10% |
Conditions | Yield |
---|---|
In gaseous matrix byproducts: H2; other Radiation; photolysis of pure SiH4 or a 37% mixture with N2 or Ar or H2 or He (total pressure = 80 Torr) in stainless steel cell by cw CO2 laser (945.98 cm**-1=IR), strong luminescence accompanies the react.; traces of higher silanes (gases) and solid hydrogenated silicon also present, H2 or He inhibit the react.; | A 0% B 2% C n/a |
Conditions | Yield |
---|---|
In neat (no solvent) evapn. in N2-plasma-flow; detd. by X-ray diffraction; | A 1% B 1% |
Conditions | Yield |
---|---|
Product distribution / selectivity; |
Conditions | Yield |
---|---|
at 1000℃; under 810.081 Torr; Gas phase (argon/H2 or argon alone); | |
With diborane at 1000℃; under 810.081 Torr; Gas phase (H2/argon); | |
With tri-tert-butyl phosphine at 1000℃; under 810.081 Torr; Gas phase (H2/argon); |
Conditions | Yield |
---|---|
In neat (no solvent) High Pressure; excessive NH4Cl and CaSi2 heated at 600 °C for 10 h in autoclave; |
aluminum oxide
silica gel
C
carbon monoxide
D
silicon
Conditions | Yield |
---|---|
In melt mixing of Al2O3 and SiO2 in weight ratio 69:31 in C2H5OH using a ball mill for 1 h, drying at 75°C in an oven, infiltration into SiC preform in temp. range from 1830°C to 1850°C in BN crucible with a lid for 10 min; gas evolution, identification by XRD; |
Conditions | Yield |
---|---|
With silicon In neat (no solvent) reaction in a Rh crucible in a high vacuum at 1300-1400 °C, small amount of Si by use of a small exceed of Si after vaporization of the other reaction educts, further product (beside Si): a glassy, amorphous yellow-brown black substance;; | |
With Si In neat (no solvent) reaction in a Rh crucible in a high vacuum at 1300-1400 °C, small amount of Si by use of a small exceed of Si after vaporization of the other reaction educts, further product (beside Si): a glassy, amorphous yellow-brown black substance;; |
Conditions | Yield |
---|---|
cobalt In toluene High Pressure; Ti reactor sealed in N2 filled glove box connected to HPLC pump, filled O2 free toluene; Si wafer placed in; 3.4 MPa, heated to 350 or 400 or 450°C; trisilane in toluene injected; seed nanocrystals of Co; 10.3MPa, 10 min; reactor immersed in ice water, cooled to room temp.; substrate (Si wafer) removed; SEM; TEM;; |
Conditions | Yield |
---|---|
gold mixt. heating in sealed tube, according to A. V. Sandulova et al., Patent USSR No. 160829, prior. 06.07.1962, Bull. Izobretenii i Otkritii, No. 5 (1964): R. S. Wagner et al., J. appl. Phys. 35, 9 (1964) 2993; |
Conditions | Yield |
---|---|
In neat (no solvent) incineration of disiloxane;; formation of amorphous Si;; | |
With air In neat (no solvent) combustion in a flame with formation of a white smoke;; |
Conditions | Yield |
---|---|
With potassium fluoride; potassium chloride In melt Electrochem. Process; anode: graphite crucible with melt (KCl, 25% KF, 1% K2SiF6, K2CrO4), cathode: W rod, reference electrode: Pt wire, 900°C, U=3-4 V, 0.5 or1.0% K2CrO4 (t=60 min); product removing with cathode, mixture crushing, leaching (water and aq.H2SO4 at 50-60°C), solid residue sepn. and drying (100-105.degre e.C); |
Conditions | Yield |
---|---|
With potassium fluoride; potassium chloride In melt Electrochem. Process; anode: graphite crucible with melt (KCl, 25% KF, 1% K2SiF6, K2CrO4), cathode: W rod, reference electrode: Pt wire, 900°C, U=3-4 V, 0.5% K2CrO4 (t=10 min) or 1.0% K2CrO4 (t=15 min); product removing with cathode, mixture crushing, leaching (water and aq.H2SO4 at 50-60°C), solid residue sepn. and drying (100-105.degre e.C); |
Conditions | Yield |
---|---|
In melt Electrolysis; |
tetrachlorosilane
potassium bromide
A
bromine
B
silicon
Conditions | Yield |
---|---|
byproducts: KCl; heated for some days at 400 °C in a closed tube; |
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: KCl, Br2; slight reaction only on heating in a melting tube at 390-400 °C for a period of 75 hours;; | |
In neat (no solvent) byproducts: KCl, Br2; slight reaction only on heating in a melting tube at 390-400 °C for a period of 75 hours;; |
Conditions | Yield |
---|---|
With carbon monoxide In neat (no solvent) Kinetics; in a hermetic furnace with a graphite heater in an atmosphere of CO; SiC is placed in graphite crucibles with lids and kept at 2270-2670 K for 900, 1800, 2700 and 3600 s; cooled samples are weighed and investigated by chem. anal. and IR-spectrometry; |
silicon
Conditions | Yield |
---|---|
With aluminum oxide In neat (no solvent) byproducts: CO, Al-Si-alloy; | |
In neat (no solvent) |
Conditions | Yield |
---|---|
In neat (no solvent) decompn. at about 2500K;; | |
In neat (no solvent) decompn. in an electric furnace at various temp.;; | |
In neat (no solvent) | |
In neat (no solvent) |
Conditions | Yield |
---|---|
In neat (no solvent) decompn. at 1 atm. above 2100°C;; | |
In neat (no solvent) decompn. at 1500-1600°C in high-vac.;; | |
In neat (no solvent) Kinetics; in a hermetic furnace with a graphite heater in an atmosphere of He; SiC is placed in graphite crucibles with lids and kept at 2770 K for 900, 1800, 2700 and 3600 s; cooled samples are weighed and investigated by chem. anal. and IR-spectrometry; | |
In neat (no solvent) decompn. at 1500-1600°C in high-vac.;; | |
In neat (no solvent) decompn. at 1 atm. above 2100°C;; |
Conditions | Yield |
---|---|
In neat (no solvent) reaction at 2000 °C;; | |
In neat (no solvent) at 2000°C;; | |
In neat (no solvent) reaction at 2000 °C;; | |
In neat (no solvent) reaction at 2000 °C;; | |
In neat (no solvent) |
Conditions | Yield |
---|---|
In melt in a tantalum tube weld-seald under Ar and protected from air by a silica jacket sealed under vac.; mixt. Li, Al, Si (15:3:6 mol) heated at 1223K, 10 h in vertical furnace and shaken several times;; cooled at rate of 6 K h**-1; elem. anal.; | 100% |
Conditions | Yield |
---|---|
In neat (no solvent) Ar atm.; molar ratio Ba:Li:Si 4:2.1:6, 1000°C; cooling (400°C), annealing; | 100% |
Conditions | Yield |
---|---|
In neat (no solvent, solid phase) placing of SrH2 and Si in welded Ta containers, heating within evacuated, well-flamed, sealed silica jacket at 1150°C for 6 h, cooling to650°C with rate of 10-12°C/h; | 100% |
Conditions | Yield |
---|---|
In neat (no solvent) under Ar, stoich. amt. of starting materials were heated at 1150 °C for 6 days, Ta-tube in an evacuated silica ampoule; | 100% |
Conditions | Yield |
---|---|
In neat (no solvent) under Ar, stoich. amt. of starting materials were heated at 1150 °C for 2 days, Ta-tube in an evacuated silica ampoule; | 100% |
Conditions | Yield |
---|---|
In dichloromethane; N,N-dimethyl-formamide | 100% |
Conditions | Yield |
---|---|
With cesium chloride at 1100℃; for 12h; Milling; Sealed tube; | 100% |
Conditions | Yield |
---|---|
With cesium chloride at 1100℃; for 12h; Milling; Sealed tube; | 100% |
Conditions | Yield |
---|---|
With cesium chloride at 1100℃; for 12h; Milling; Sealed tube; | 100% |
Conditions | Yield |
---|---|
With cesium chloride at 1100℃; for 12h; Milling; Sealed tube; | 100% |
Conditions | Yield |
---|---|
With cesium chloride at 1100℃; for 12h; Milling; Sealed tube; | 100% |
Conditions | Yield |
---|---|
With cesium chloride at 1100℃; for 12h; Milling; Sealed tube; | 100% |
Conditions | Yield |
---|---|
With cesium chloride In acetone at 1100℃; under 0.01 Torr; for 12h; Sealed tube; | 100% |
Conditions | Yield |
---|---|
In gaseous matrix byproducts: graphite; generation of SiO by Heating Si + SiO2 in Ar-stream, mixing with CH4 in H2-stream at 1500-1560°C, pptn. of SiC in cooler reactor zone; X-ray diffraction, electron microscopy, EPMA, EELS; | 99% |
Conditions | Yield |
---|---|
In melt Hf, Cr, and Si were pressed into pellets and arc-melted under Ar; X-ray powder diffraction; | 99% |
Conditions | Yield |
---|---|
In melt Ti, Cr, and Si were pressed into pellets and arc-melted under Ar; X-ray powder diffraction; | 99% |
Conditions | Yield |
---|---|
In melt Zr, Cr, and Si were pressed into pellets and arc-melted under Ar; X-ray powder diffraction; | 99% |
Conditions | Yield |
---|---|
In neat (no solvent) heating of amorphous Si in a Cl2 stream at moderate red heat;; | 98% |
In neat (no solvent) reaction of Si in Cl2 atmosphere with inflammation on heating;; | |
moderate heating;; |
Conditions | Yield |
---|---|
at 700 - 1100℃; for 336h; Sealed tube; Inert atmosphere; | 98% |
Conditions | Yield |
---|---|
With methylene chloride; copper In neat (no solvent) vibrating of the Si-Cu powder;; | 97% |
With methylene chloride; copper In neat (no solvent) CH3Cl and Si-Cu/Cu-oxide at 300-375°C;; | 82.4% |
With methylene chloride; copper In neat (no solvent) CH3Cl and Si purified by treatment with strong acids;; | |
With methylene chloride In neat (no solvent) | |
With CH3Cl In neat (no solvent) |
Conditions | Yield |
---|---|
In neat (no solvent) at 1250°C for 20 min; XRD; | 96% |
In neat (no solvent) at 1150°C for 100 min; XRD; | 95% |
In gaseous matrix (H2-He-N2 4%-25%-71%), 1400°C, 15 h; | 59.9% |
Conditions | Yield |
---|---|
With sebaconitrile; copper(I) oxide In NALKYLENE 500 at 200℃; for 14h; Product distribution / selectivity; | A 3.32% B 95.7% |
With octanedinitrile; copper(I) oxide In NALKYLENE 500 at 200℃; for 14 - 21h; Product distribution / selectivity; | A 3.45% B 94.18% |
With hexanedinitrile; copper(I) oxide In NALKYLENE 500 at 200℃; for 14h; Product distribution / selectivity; | A 5.26% B 93.38% |
Conditions | Yield |
---|---|
In neat (no solvent) heating Si (in tube of ceramic material) to 1180°C and red P to 400°C;; | 95% |
In neat (no solvent) heating Si (in tube of ceramic material) to 1180°C and red P to 400°C;; | 95% |
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: SiO; powder mixt. cold pressed, than heat-treated in a H2 flow (4KPa) at temp. increasing slowly from 1200 to 1400°C for 2h, kept at 1450-1500°C for 2h; | 95% |
Conditions | Yield |
---|---|
In neat (no solvent, solid phase) placing of EuH2 and Si in welded Ta containers, heating within evacuated, well-flamed, sealed silica jacket at 1150°C for 6 h, cooling to650°C with rate of 10-12°C/h; | 95% |
Conditions | Yield |
---|---|
In neat (no solvent, solid phase) placing of CaH2 and Si in welded Ta containers, heating within evacuated, well-flamed, sealed silica jacket at 1150°C for 6 h, cooling to650°C with rate of 10-12°C/h; | 95% |
Conditions | Yield |
---|---|
In neat (no solvent, solid phase) placing of BaH2 and Si in welded Ta containers, heating within evacuated, well-flamed, sealed silica jacket at 1150°C for 6 h, cooling to650°C with rate of 10-12°C/h; | 95% |
Conditions | Yield |
---|---|
In neat (no solvent, solid phase) placing of Sr and Si in welded Ta containers, heating under vac. at 1300°C for 6 h, cooling to 600°C with rate of 8°C/h; | 95% |
Silicon was first identified by Antoine Lavoisier in 1787 (as a component of the Latin silex, silicis for flint, flints), and was later mistaken by Humphry Davy in 1800 for a compound. In 1811 Gay-Lussac and Thénard probably prepared impure amorphous silicon through the heating of potassium with silicon tetrafluoride. In 1824, Berzelius, generally given creditwhere for discovering the element silicon, prepared amorphous silicon using approximately the same method as Lussac. Berzelius also purified the product by repeatedly washing it.
Reported in EPA TSCA Inventory.
OSHA PEL: TWA Total Dust: 10 mg/m3 of total; Respirable Fraction: 5 mg/m3
ACGIH TLV: TWA (nuisance particulate) 10 mg/m3 of total dust (when toxic impurities are not present, e.g., quartz <1%)
DOT Classification: 4.1; Label: Flammable Solid
With the CAS registry number 7440-21-3, Silicon is also named as Polyeristalline silicon powder. The product's categories are Inorganics; Silicon Nanomaterials; 14: Si; Nanoparticles: Metals and Metal AlloysMetal and Ceramic Science; Nanopowders and Nanoparticle Dispersions; Pure ElementsMetal and Ceramic Science; Electronic Chemicals; Materials Science. Besides, it is grey lustrous solid or grey powder, which should be stored in a cool, dry, ventilated warehouse away from fire and heat source. It is stable and incompatible with oxidizing agents, bases, carbonates, alkali metals, lead and aluminium oxides, halogens, carbides, formic acid. In addition, its molecular formula is Si and molecular weight is 28.08.
The other characteristics of this product can be summarized as: (1)Exact Mass: 27.976927; (2)MonoIsotopic Mass: 27.976927; (3)EINECS: 231-130-8; (4)Density: 2.33 g/cm3; (5)Melting point: 1410 °C; (6)Boiling point: 2355 °C; (7)Enthalpy of Vaporization: 15.08 kJ/mol; (8)Vapour Pressure: 54300 mmHg at 25 °C.
Preparation of Silicon: this chemical is commercially prepared by the reaction of high-purity silica with wood, charcoal, and coal, in an electric arc furnace using carbon electrodes.This reaction will occur at temperature of 1900 °C. The chemical equations is as follows:
SiO2 + C → Si + CO2
SiO2 + 2 C → Si + 2 CO
The yield is at least 98 % pure.
Uses of Silicon: this chemical is mainly used for the manufacture of aluminium-silicon alloys to produce cast parts in the automotive industry. It is also used in the semiconductor industry, electronics and photovoltaic applications to produce ultra-pure silicon wafers. Similarly, it can be used in waterproofing treatments, molding compounds and mold-release agents, mechanical seals, high temperature greases and waxes, caulking compounds and even in applications as diverse as breast implants, contact lenses, explosives and pyrotechnics.
When you are using this chemical, please be cautious about it as the following: it is highly flammable. Please keep container tightly closed in a well-ventilated place away from sources of ignition. And in case of contact with eyes, rinse immediately with plenty of water and seek medical advice. Moreover, you should wear suitable protective clothing and gloves. And please take precautionary measures against static discharges. Additionally, in case of accident or if you feel unwell, seek medical advice immediately (show the label whenever possible.)
You can still convert the following datas into molecular structure:
(1)SMILES: [SiH4]
(2)InChI: InChI=1/Si
(3)InChIKey: XUIMIQQOPSSXEZ-UHFFFAOYAB
(4)Std. InChI: InChI=1S/Si
(5)Std. InChIKey: XUIMIQQOPSSXEZ-UHFFFAOYSA-N
The toxicity data is as follows:
Organism | Test Type | Route | Reported Dose (Normalized Dose) | Effect | Source |
---|---|---|---|---|---|
rat | LD50 | oral | 3160mg/kg (3160mg/kg) | FAO Nutrition Meetings Report Series. Vol. 53A, Pg. 21, 1974. | |
rat | LDLo | intraperitoneal | 500mg/kg (500mg/kg) | SENSE ORGANS AND SPECIAL SENSES: OTHER: EYE LUNGS, THORAX, OR RESPIRATION: RESPIRATORY STIMULATION SENSE ORGANS AND SPECIAL SENSES: OTHER CHANGES: OLFACTION | National Technical Information Service. Vol. OTS0536164, |
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