Product Name

  • Name

    Silicon

  • EINECS 231-130-8
  • CAS No. 7440-21-3
  • Article Data757
  • CAS DataBase
  • Density 2.33 g/cm3
  • Solubility insoluble in water
  • Melting Point 1410 °C
  • Formula Si
  • Boiling Point 2355 °C
  • Molecular Weight 32.1173
  • Flash Point
  • Transport Information UN 2922 8/PG 2
  • Appearance grey lustrous solid or grey powder
  • Safety 26-36/37-45-7/9-33-16-36
  • Risk Codes 11
  • Molecular Structure Molecular Structure of 7440-21-3 (Silicon)
  • Hazard Symbols FlammableF,ToxicT
  • Synonyms silicon metal;4FY;Aldrich 267414-25G;Biosilicon;CZ-N Polished wafer;FEB 450D;GKO 3516A;HGH600;Hexsil;JT 02;KDB 0.1;KDB 0.5;KDB 10;KDB 20;KR 1;Metasilicon 325A;PHC20;Polysilicon;SI 1059;SILSO;Sharp 80W;Si(100) wafer;Sicomill 4C-P;Sicomill Grade 2;Silgrain;Silgrain HQ;Silgrain Standard;Silicon 100;Silicon element;Polyeristalline silicon powder;
  • PSA 0.00000
  • LogP 0.00000

Synthetic route

Dichlorosilane
4109-96-0

Dichlorosilane

silicon
7440-21-3

silicon

Conditions
ConditionsYield
Prepd. by laser chemical vapor pptn. at atmospheric pressure.;100%
In neat (no solvent) chemical vapor deposition with a mixt. of SiH2Cl2 and H2;
With hydrogen chemical vapor deposition (hot-wall reactor, basic pressure 10 or 76 Torr, 1223 K);
trichlorosilane
10025-78-2

trichlorosilane

silicon
7440-21-3

silicon

Conditions
ConditionsYield
Stage #1: trichlorosilane under 3.75038 Torr; for 6h; Pulsed microwave radiation (25-50W);
Stage #2: With hydrogen at 900℃;
96.7%
With hydrogen chemical vapor deposition (8% SiHCl3 in H2, 1100°C);
With hydrogen chemical vapor deposition (hot-wall reactor, basic pressure 10 or 76 Torr, 1223 K);
Conditions
ConditionsYield
With magnesium oxide; magnesium In neat (no solvent) mixt. of 180 parts SiO2, 144 parts Mg and 81 parts MgO, covered with a layer of Mg in a warmed up crucible, heating at red heat in a electric furnace, begin of the react. after 2-3 min. with strong glowing, best yields with a SiO2 grainsize of 0.14mm;; treatment of the reactionproduct with HCl, H2SO4 and HF one after another, Si powder of 99.09-99.60% purity;;92.7%
With Mg; MgO In neat (no solvent) mixt. of 180 parts SiO2, 144 parts Mg and 81 parts MgO, covered with a layer of Mg in a warmed up crucible, heating at red heat in a electric furnace, begin of the react. after 2-3 min. with strong glowing, best yields with a SiO2 grainsize of 0.14mm;; treatment of the reactionproduct with HCl, H2SO4 and HF one after another, Si powder of 99.09-99.60% purity;;92.7%
With magnesium Inert atmosphere; Schlenk technique;46.7%
tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

silicon
7440-21-3

silicon

Conditions
ConditionsYield
With hydrogen at 700℃; under 15.0015 Torr; Product distribution / selectivity; Microwave radiation (200W);60%
Product distribution / selectivity;
With KBr or KI In neat (no solvent) byproducts: KCl, Br; uncomplete reaction of SiCl4 with KBr or KI at 300-400 °C;;
methane
34557-54-5

methane

monosilane
7440-21-3

monosilane

silicon carbide

silicon carbide

B

silicon
7440-21-3

silicon

Conditions
ConditionsYield
With H2 In neat (no solvent) chemical vapour deposition of CH4 (4.0 mol%), H2 and SiH4 (2.0 mol%) gases in reaction-sintered SiC tube within mullite tube in resistance furnace, total gas flow rate 2.7E-5 m**3/sec, total gas pressure 0.1 MPa, 1623K; transmission electron microscopy, pycnometry, IR spectroscopy, X-ray diffractometry;A 23%
B n/a
With H2 In neat (no solvent) chemical vapour deposition of CH4 (7.2 mol%), H2 and SiH4 (3.6 mol%) gases in reaction-sintered SiC tube within mullite tube in resistance furnace, total gas flow rate 2.7E-5 m**3/sec, total gas pressure 0.1 MPa, 1623K; transmission electron microscopy, pycnometry, IR spectroscopy, X-ray diffractometry;A 19%
B n/a
With H2 In neat (no solvent) chemical vapour deposition of CH4 (4.0 mol%), H2 and SiH4 (2.0 mol%) gases in reaction-sintered SiC tube within mullite tube in resistance furnace, total gas flow rate 2.7E-5 m**3/sec, total gas pressure 0.1 MPa, 1573K; transmission electron microscopy, pycnometry, IR spectroscopy, X-ray diffractometry;A 14%
B n/a
sodium metasilicate nonahydrate

sodium metasilicate nonahydrate

magnesium
7439-95-4

magnesium

A

magnesium hydroxide

magnesium hydroxide

B

hydrogen
1333-74-0

hydrogen

C

magnesium oxide

magnesium oxide

D

sodium hydroxide
1310-73-2

sodium hydroxide

E

silicon
7440-21-3

silicon

Conditions
ConditionsYield
at 200℃; under 116262 Torr; for 10h; Temperature; Autoclave;A n/a
B n/a
C n/a
D n/a
E 10%
monosilane
7440-21-3

monosilane

A

trisilane
7783-26-8

trisilane

B

disilane

disilane

C

silicon
7440-21-3

silicon

Conditions
ConditionsYield
In gaseous matrix byproducts: H2; other Radiation; photolysis of pure SiH4 or a 37% mixture with N2 or Ar or H2 or He (total pressure = 80 Torr) in stainless steel cell by cw CO2 laser (945.98 cm**-1=IR), strong luminescence accompanies the react.; traces of higher silanes (gases) and solid hydrogenated silicon also present, H2 or He inhibit the react.;A 0%
B 2%
C n/a
molybdenium disilicate

molybdenium disilicate

A

pentamolybdenum trisilicide

pentamolybdenum trisilicide

B

silicon
7440-21-3

silicon

Conditions
ConditionsYield
In neat (no solvent) evapn. in N2-plasma-flow; detd. by X-ray diffraction;A 1%
B 1%
tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

A

silicon, oxidized

silicon, oxidized

B

silicon
7440-21-3

silicon

Conditions
ConditionsYield
Product distribution / selectivity;
monosilane
7440-21-3

monosilane

silicon
7440-21-3

silicon

Conditions
ConditionsYield
at 1000℃; under 810.081 Torr; Gas phase (argon/H2 or argon alone);
With diborane at 1000℃; under 810.081 Torr; Gas phase (H2/argon);
With tri-tert-butyl phosphine at 1000℃; under 810.081 Torr; Gas phase (H2/argon);
calcium silicide

calcium silicide

ammonium chloride

ammonium chloride

A

silicon nitride

silicon nitride

B

silicon
7440-21-3

silicon

Conditions
ConditionsYield
In neat (no solvent) High Pressure; excessive NH4Cl and CaSi2 heated at 600 °C for 10 h in autoclave;
silicon carbide

silicon carbide

aluminum oxide
1333-84-2, 1344-28-1

aluminum oxide

A

silicon monoxide

silicon monoxide

mullite

mullite

C

carbon monoxide
201230-82-2

carbon monoxide

D

silicon
7440-21-3

silicon

Conditions
ConditionsYield
In melt mixing of Al2O3 and SiO2 in weight ratio 69:31 in C2H5OH using a ball mill for 1 h, drying at 75°C in an oven, infiltration into SiC preform in temp. range from 1830°C to 1850°C in BN crucible with a lid for 10 min; gas evolution, identification by XRD;
aluminum oxide
1333-84-2, 1344-28-1

aluminum oxide

silica

silica

silicon
7440-21-3

silicon

Conditions
ConditionsYield
With silicon In neat (no solvent) reaction in a Rh crucible in a high vacuum at 1300-1400 °C, small amount of Si by use of a small exceed of Si after vaporization of the other reaction educts, further product (beside Si): a glassy, amorphous yellow-brown black substance;;
With Si In neat (no solvent) reaction in a Rh crucible in a high vacuum at 1300-1400 °C, small amount of Si by use of a small exceed of Si after vaporization of the other reaction educts, further product (beside Si): a glassy, amorphous yellow-brown black substance;;
trisilane
7783-26-8

trisilane

silicon
7440-21-3

silicon

Conditions
ConditionsYield
cobalt In toluene High Pressure; Ti reactor sealed in N2 filled glove box connected to HPLC pump, filled O2 free toluene; Si wafer placed in; 3.4 MPa, heated to 350 or 400 or 450°C; trisilane in toluene injected; seed nanocrystals of Co; 10.3MPa, 10 min; reactor immersed in ice water, cooled to room temp.; substrate (Si wafer) removed; SEM; TEM;;
silicon doted with sulfur

silicon doted with sulfur

bromine
7726-95-6

bromine

silicon
7440-21-3

silicon

Conditions
ConditionsYield
gold mixt. heating in sealed tube, according to A. V. Sandulova et al., Patent USSR No. 160829, prior. 06.07.1962, Bull. Izobretenii i Otkritii, No. 5 (1964): R. S. Wagner et al., J. appl. Phys. 35, 9 (1964) 2993;
disiloxane
107-46-0

disiloxane

silicon
7440-21-3

silicon

Conditions
ConditionsYield
In neat (no solvent) incineration of disiloxane;; formation of amorphous Si;;
With air In neat (no solvent) combustion in a flame with formation of a white smoke;;
potassium chromate

potassium chromate

potassium hexafluorosilicate

potassium hexafluorosilicate

A

chromium disilicide

chromium disilicide

B

silicon
7440-21-3

silicon

Conditions
ConditionsYield
With potassium fluoride; potassium chloride In melt Electrochem. Process; anode: graphite crucible with melt (KCl, 25% KF, 1% K2SiF6, K2CrO4), cathode: W rod, reference electrode: Pt wire, 900°C, U=3-4 V, 0.5 or1.0% K2CrO4 (t=60 min); product removing with cathode, mixture crushing, leaching (water and aq.H2SO4 at 50-60°C), solid residue sepn. and drying (100-105.degre e.C);
potassium chromate

potassium chromate

potassium hexafluorosilicate

potassium hexafluorosilicate

A

chromium silicide

chromium silicide

B

silicon
7440-21-3

silicon

Conditions
ConditionsYield
With potassium fluoride; potassium chloride In melt Electrochem. Process; anode: graphite crucible with melt (KCl, 25% KF, 1% K2SiF6, K2CrO4), cathode: W rod, reference electrode: Pt wire, 900°C, U=3-4 V, 0.5% K2CrO4 (t=10 min) or 1.0% K2CrO4 (t=15 min); product removing with cathode, mixture crushing, leaching (water and aq.H2SO4 at 50-60°C), solid residue sepn. and drying (100-105.degre e.C);
sodium silicate

sodium silicate

sodium fluoride

sodium fluoride

A

sodium
7440-23-5

sodium

B

silicon
7440-21-3

silicon

Conditions
ConditionsYield
In melt Electrolysis;
tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

potassium bromide
7558-02-3

potassium bromide

A

bromine
7726-95-6

bromine

B

silicon
7440-21-3

silicon

Conditions
ConditionsYield
byproducts: KCl; heated for some days at 400 °C in a closed tube;
tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

potassium bromide
7558-02-3

potassium bromide

silicon
7440-21-3

silicon

Conditions
ConditionsYield
In neat (no solvent) byproducts: KCl, Br2; slight reaction only on heating in a melting tube at 390-400 °C for a period of 75 hours;;
In neat (no solvent) byproducts: KCl, Br2; slight reaction only on heating in a melting tube at 390-400 °C for a period of 75 hours;;
silicon carbide

silicon carbide

A

silicon monoxide

silicon monoxide

B

pyrographite
7440-44-0

pyrographite

C

silicon
7440-21-3

silicon

Conditions
ConditionsYield
With carbon monoxide In neat (no solvent) Kinetics; in a hermetic furnace with a graphite heater in an atmosphere of CO; SiC is placed in graphite crucibles with lids and kept at 2270-2670 K for 900, 1800, 2700 and 3600 s; cooled samples are weighed and investigated by chem. anal. and IR-spectrometry;
silicon carbide

silicon carbide

silicon
7440-21-3

silicon

Conditions
ConditionsYield
With aluminum oxide In neat (no solvent) byproducts: CO, Al-Si-alloy;
In neat (no solvent)
silicon carbide

silicon carbide

graphite

graphite

B

silicon
7440-21-3

silicon

Conditions
ConditionsYield
In neat (no solvent) decompn. at about 2500K;;
In neat (no solvent) decompn. in an electric furnace at various temp.;;
In neat (no solvent)
In neat (no solvent)
silicon carbide

silicon carbide

A

pyrographite
7440-44-0

pyrographite

B

silicon
7440-21-3

silicon

Conditions
ConditionsYield
In neat (no solvent) decompn. at 1 atm. above 2100°C;;
In neat (no solvent) decompn. at 1500-1600°C in high-vac.;;
In neat (no solvent) Kinetics; in a hermetic furnace with a graphite heater in an atmosphere of He; SiC is placed in graphite crucibles with lids and kept at 2770 K for 900, 1800, 2700 and 3600 s; cooled samples are weighed and investigated by chem. anal. and IR-spectrometry;
In neat (no solvent) decompn. at 1500-1600°C in high-vac.;;
In neat (no solvent) decompn. at 1 atm. above 2100°C;;
silicon carbide

silicon carbide

A

silicon monoxide

silicon monoxide

B

silicon
7440-21-3

silicon

Conditions
ConditionsYield
In neat (no solvent) reaction at 2000 °C;;
In neat (no solvent) at 2000°C;;
In neat (no solvent) reaction at 2000 °C;;
In neat (no solvent) reaction at 2000 °C;;
In neat (no solvent)
lithium
7439-93-2

lithium

aluminium
7429-90-5

aluminium

silicon
7440-21-3

silicon

lithium aluminium silicide

lithium aluminium silicide

Conditions
ConditionsYield
In melt in a tantalum tube weld-seald under Ar and protected from air by a silica jacket sealed under vac.; mixt. Li, Al, Si (15:3:6 mol) heated at 1223K, 10 h in vertical furnace and shaken several times;; cooled at rate of 6 K h**-1; elem. anal.;100%
lithium
7439-93-2

lithium

barium
7440-39-3

barium

silicon
7440-21-3

silicon

4Ba(2+)*2Li(1+)*Si6(10-)=Ba4Li2Si6

4Ba(2+)*2Li(1+)*Si6(10-)=Ba4Li2Si6

Conditions
ConditionsYield
In neat (no solvent) Ar atm.; molar ratio Ba:Li:Si 4:2.1:6, 1000°C; cooling (400°C), annealing;100%
strontium(II) hydride

strontium(II) hydride

silicon
7440-21-3

silicon

Sr5Si3H(x)

Sr5Si3H(x)

Conditions
ConditionsYield
In neat (no solvent, solid phase) placing of SrH2 and Si in welded Ta containers, heating within evacuated, well-flamed, sealed silica jacket at 1150°C for 6 h, cooling to650°C with rate of 10-12°C/h;100%
lanthanum
7439-91-0

lanthanum

lanthanum(III) bromide
13536-79-3

lanthanum(III) bromide

silicon
7440-21-3

silicon

La3Br3Si

La3Br3Si

Conditions
ConditionsYield
In neat (no solvent) under Ar, stoich. amt. of starting materials were heated at 1150 °C for 6 days, Ta-tube in an evacuated silica ampoule;100%
lanthanum
7439-91-0

lanthanum

lanthanum(III) iodide
13813-22-4

lanthanum(III) iodide

silicon
7440-21-3

silicon

La3I3Si

La3I3Si

Conditions
ConditionsYield
In neat (no solvent) under Ar, stoich. amt. of starting materials were heated at 1150 °C for 2 days, Ta-tube in an evacuated silica ampoule;100%
lead(II) bromide

lead(II) bromide

methylammonium bromide
6876-37-5

methylammonium bromide

silicon
7440-21-3

silicon

Reaxys ID: 28470675

Reaxys ID: 28470675

Conditions
ConditionsYield
In dichloromethane; N,N-dimethyl-formamide100%
yttrium(III) oxysulfide

yttrium(III) oxysulfide

terbium dioxosulfide

terbium dioxosulfide

sulfur
7704-34-9

sulfur

silicon
7440-21-3

silicon

(Y0.98Tb0.02)4S3(Si2O7)

(Y0.98Tb0.02)4S3(Si2O7)

Conditions
ConditionsYield
With cesium chloride at 1100℃; for 12h; Milling; Sealed tube;100%
yttrium(III) oxysulfide

yttrium(III) oxysulfide

terbium dioxosulfide

terbium dioxosulfide

sulfur
7704-34-9

sulfur

silicon
7440-21-3

silicon

(Y0.96Tb0.04)4S3(Si2O7)

(Y0.96Tb0.04)4S3(Si2O7)

Conditions
ConditionsYield
With cesium chloride at 1100℃; for 12h; Milling; Sealed tube;100%
yttrium(III) oxysulfide

yttrium(III) oxysulfide

europium oxysulfide

europium oxysulfide

sulfur
7704-34-9

sulfur

silicon
7440-21-3

silicon

(Y0.99Eu0.01)4S3(Si2O7)

(Y0.99Eu0.01)4S3(Si2O7)

Conditions
ConditionsYield
With cesium chloride at 1100℃; for 12h; Milling; Sealed tube;100%
yttrium(III) oxysulfide

yttrium(III) oxysulfide

europium oxysulfide

europium oxysulfide

sulfur
7704-34-9

sulfur

silicon
7440-21-3

silicon

(Y0.96Eu0.04)4S3(Si2O7)

(Y0.96Eu0.04)4S3(Si2O7)

Conditions
ConditionsYield
With cesium chloride at 1100℃; for 12h; Milling; Sealed tube;100%
yttrium(III) oxysulfide

yttrium(III) oxysulfide

europium oxysulfide

europium oxysulfide

sulfur
7704-34-9

sulfur

silicon
7440-21-3

silicon

(Y0.90Eu0.10)4S3(Si2O7)

(Y0.90Eu0.10)4S3(Si2O7)

Conditions
ConditionsYield
With cesium chloride at 1100℃; for 12h; Milling; Sealed tube;100%
yttrium(III) oxysulfide

yttrium(III) oxysulfide

sulfur
7704-34-9

sulfur

silicon
7440-21-3

silicon

Y4S3(Si2O7)

Y4S3(Si2O7)

Conditions
ConditionsYield
With cesium chloride at 1100℃; for 12h; Milling; Sealed tube;100%
yttrium(III) oxide

yttrium(III) oxide

selenium
7782-49-2

selenium

silicon
7440-21-3

silicon

Y2SiO4Se

Y2SiO4Se

Conditions
ConditionsYield
With cesium chloride In acetone at 1100℃; under 0.01 Torr; for 12h; Sealed tube;100%
methane
34557-54-5

methane

silicon
7440-21-3

silicon

silicon carbide

silicon carbide

Conditions
ConditionsYield
In gaseous matrix byproducts: graphite; generation of SiO by Heating Si + SiO2 in Ar-stream, mixing with CH4 in H2-stream at 1500-1560°C, pptn. of SiC in cooler reactor zone; X-ray diffraction, electron microscopy, EPMA, EELS;99%
hafnium

hafnium

chromium
7440-47-3

chromium

silicon
7440-21-3

silicon

Hf2Cr4Si5

Hf2Cr4Si5

Conditions
ConditionsYield
In melt Hf, Cr, and Si were pressed into pellets and arc-melted under Ar; X-ray powder diffraction;99%
titanium
7440-32-6

titanium

chromium
7440-47-3

chromium

silicon
7440-21-3

silicon

Ti2Cr4Si5

Ti2Cr4Si5

Conditions
ConditionsYield
In melt Ti, Cr, and Si were pressed into pellets and arc-melted under Ar; X-ray powder diffraction;99%
zirconium
7440-67-7

zirconium

chromium
7440-47-3

chromium

silicon
7440-21-3

silicon

Zr2Cr4Si5

Zr2Cr4Si5

Conditions
ConditionsYield
In melt Zr, Cr, and Si were pressed into pellets and arc-melted under Ar; X-ray powder diffraction;99%
chlorine
7782-50-5

chlorine

silicon
7440-21-3

silicon

tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

Conditions
ConditionsYield
In neat (no solvent) heating of amorphous Si in a Cl2 stream at moderate red heat;;98%
In neat (no solvent) reaction of Si in Cl2 atmosphere with inflammation on heating;;
moderate heating;;
cerium
7440-45-1

cerium

magnesium
7439-95-4

magnesium

silicon
7440-21-3

silicon

Ce6Mg23Si

Ce6Mg23Si

Conditions
ConditionsYield
at 700 - 1100℃; for 336h; Sealed tube; Inert atmosphere;98%
silicon
7440-21-3

silicon

dimethylsilicon dichloride
75-78-5

dimethylsilicon dichloride

Conditions
ConditionsYield
With methylene chloride; copper In neat (no solvent) vibrating of the Si-Cu powder;;97%
With methylene chloride; copper In neat (no solvent) CH3Cl and Si-Cu/Cu-oxide at 300-375°C;;82.4%
With methylene chloride; copper In neat (no solvent) CH3Cl and Si purified by treatment with strong acids;;
With methylene chloride In neat (no solvent)
With CH3Cl In neat (no solvent)
nitrogen
7727-37-9

nitrogen

silicon
7440-21-3

silicon

silicon nitride

silicon nitride

Conditions
ConditionsYield
In neat (no solvent) at 1250°C for 20 min; XRD;96%
In neat (no solvent) at 1150°C for 100 min; XRD;95%
In gaseous matrix (H2-He-N2 4%-25%-71%), 1400°C, 15 h;59.9%
ethanol
64-17-5

ethanol

silicon
7440-21-3

silicon

A

tetraethoxy orthosilicate
78-10-4

tetraethoxy orthosilicate

B

Triethoxysilane
998-30-1

Triethoxysilane

Conditions
ConditionsYield
With sebaconitrile; copper(I) oxide In NALKYLENE 500 at 200℃; for 14h; Product distribution / selectivity;A 3.32%
B 95.7%
With octanedinitrile; copper(I) oxide In NALKYLENE 500 at 200℃; for 14 - 21h; Product distribution / selectivity;A 3.45%
B 94.18%
With hexanedinitrile; copper(I) oxide In NALKYLENE 500 at 200℃; for 14h; Product distribution / selectivity;A 5.26%
B 93.38%
phosphorous

phosphorous

silicon
7440-21-3

silicon

silicon monophosphide

silicon monophosphide

Conditions
ConditionsYield
In neat (no solvent) heating Si (in tube of ceramic material) to 1180°C and red P to 400°C;;95%
In neat (no solvent) heating Si (in tube of ceramic material) to 1180°C and red P to 400°C;;95%
vanadia

vanadia

silicon
7440-21-3

silicon

vanadium silicide

vanadium silicide

Conditions
ConditionsYield
In neat (no solvent) byproducts: SiO; powder mixt. cold pressed, than heat-treated in a H2 flow (4KPa) at temp. increasing slowly from 1200 to 1400°C for 2h, kept at 1450-1500°C for 2h;95%
europium dihydride

europium dihydride

silicon
7440-21-3

silicon

Eu5Si3H(x)

Eu5Si3H(x)

Conditions
ConditionsYield
In neat (no solvent, solid phase) placing of EuH2 and Si in welded Ta containers, heating within evacuated, well-flamed, sealed silica jacket at 1150°C for 6 h, cooling to650°C with rate of 10-12°C/h;95%
calcium hydride
7789-78-8

calcium hydride

silicon
7440-21-3

silicon

Ca5Si3H(x)

Ca5Si3H(x)

Conditions
ConditionsYield
In neat (no solvent, solid phase) placing of CaH2 and Si in welded Ta containers, heating within evacuated, well-flamed, sealed silica jacket at 1150°C for 6 h, cooling to650°C with rate of 10-12°C/h;95%
barium hydride

barium hydride

silicon
7440-21-3

silicon

Ba5Si3H(x)

Ba5Si3H(x)

Conditions
ConditionsYield
In neat (no solvent, solid phase) placing of BaH2 and Si in welded Ta containers, heating within evacuated, well-flamed, sealed silica jacket at 1150°C for 6 h, cooling to650°C with rate of 10-12°C/h;95%
strontium

strontium

silicon
7440-21-3

silicon

Sr5Si3

Sr5Si3

Conditions
ConditionsYield
In neat (no solvent, solid phase) placing of Sr and Si in welded Ta containers, heating under vac. at 1300°C for 6 h, cooling to 600°C with rate of 8°C/h;95%

Silicon History

 Silicon was first identified by Antoine Lavoisier in 1787 (as a component of the Latin silex, silicis for flint, flints), and was later mistaken by Humphry Davy in 1800 for a compound. In 1811 Gay-Lussac and Thénard probably prepared impure amorphous silicon through the heating of potassium with silicon tetrafluoride. In 1824, Berzelius, generally given creditwhere for discovering the element silicon, prepared amorphous silicon using approximately the same method as Lussac. Berzelius also purified the product by repeatedly washing it.

Silicon Consensus Reports

Reported in EPA TSCA Inventory.

Silicon Standards and Recommendations

OSHA PEL: TWA Total Dust: 10 mg/m3 of total; Respirable Fraction: 5 mg/m3
ACGIH TLV: TWA (nuisance particulate) 10 mg/m3 of total dust (when toxic impurities are not present, e.g., quartz <1%)
DOT Classification:  4.1; Label: Flammable Solid

Silicon Specification

With the CAS registry number 7440-21-3, Silicon is also named as Polyeristalline silicon powder. The product's categories are Inorganics; Silicon Nanomaterials; 14: Si; Nanoparticles: Metals and Metal AlloysMetal and Ceramic Science; Nanopowders and Nanoparticle Dispersions; Pure ElementsMetal and Ceramic Science; Electronic Chemicals; Materials Science. Besides, it is grey lustrous solid or grey powder, which should be stored in a cool, dry, ventilated warehouse away from fire and heat source. It is stable and incompatible with oxidizing agents, bases, carbonates, alkali metals, lead and aluminium oxides, halogens, carbides, formic acid. In addition, its molecular formula is Si and molecular weight is 28.08.

The other characteristics of this product can be summarized as: (1)Exact Mass: 27.976927; (2)MonoIsotopic Mass: 27.976927; (3)EINECS: 231-130-8; (4)Density: 2.33 g/cm3; (5)Melting point: 1410 °C; (6)Boiling point: 2355 °C; (7)Enthalpy of Vaporization: 15.08 kJ/mol; (8)Vapour Pressure: 54300 mmHg at 25 °C.

Preparation of Silicon: this chemical is commercially prepared by the reaction of high-purity silica with wood, charcoal, and coal, in an electric arc furnace using carbon electrodes.This reaction will occur at temperature of 1900 °C. The chemical equations is as follows:
SiO2 + C → Si + CO2
SiO2 + 2 C → Si + 2 CO
The yield is at least 98 % pure.

Uses of Silicon: this chemical is mainly used for the manufacture of aluminium-silicon alloys to produce cast parts in the automotive industry. It is also used in the semiconductor industry, electronics and photovoltaic applications to produce ultra-pure silicon wafers. Similarly, it can be used in waterproofing treatments, molding compounds and mold-release agents, mechanical seals, high temperature greases and waxes, caulking compounds and even in applications as diverse as breast implants, contact lenses, explosives and pyrotechnics.

When you are using this chemical, please be cautious about it as the following: it is highly flammable. Please keep container tightly closed in a well-ventilated place away from sources of ignition. And in case of contact with eyes, rinse immediately with plenty of water and seek medical advice. Moreover, you should wear suitable protective clothing and gloves. And please take precautionary measures against static discharges. Additionally, in case of accident or if you feel unwell, seek medical advice immediately (show the label whenever possible.)

You can still convert the following datas into molecular structure:
(1)SMILES: [SiH4]
(2)InChI: InChI=1/Si
(3)InChIKey: XUIMIQQOPSSXEZ-UHFFFAOYAB
(4)Std. InChI: InChI=1S/Si
(5)Std. InChIKey: XUIMIQQOPSSXEZ-UHFFFAOYSA-N

The toxicity data is as follows:

Organism Test Type Route Reported Dose (Normalized Dose) Effect Source
rat LD50 oral 3160mg/kg (3160mg/kg)   FAO Nutrition Meetings Report Series. Vol. 53A, Pg. 21, 1974.
rat LDLo intraperitoneal 500mg/kg (500mg/kg) SENSE ORGANS AND SPECIAL SENSES: OTHER: EYE

LUNGS, THORAX, OR RESPIRATION: RESPIRATORY STIMULATION

SENSE ORGANS AND SPECIAL SENSES: OTHER CHANGES: OLFACTION
National Technical Information Service. Vol. OTS0536164,

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