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silicon
A
tetrachlorosilane
B
hexachlorodisilane
C
perchlorotrisilane
Conditions | Yield |
---|---|
In neat (no solvent) chlorination of crude Si at 300-310 °C; best yield of SiCl4;; | A 80% B n/a C n/a |
Conditions | Yield |
---|---|
With aluminium trichloride In hexane Ph3SiSiPh3, AlCl3 and CH3COCl in hexane were stirred overnight; hexane added; upper phase septd.; hexane removed (vac.); redistd.; | 55% |
chloroform
trichlorosilane
B
tetrachlorosilane
C
1,1,1,2,2-pentachlorodisilane
D
hexachlorodisilane
Conditions | Yield |
---|---|
byproducts: CH2Cl2; copyrolysis (1:1), quartz tube (550°C, yields of products depending on temperature (350 to 600°C)), product condensing; products not isolated, reaction monitoring by mass spectroscopy; | A 1.3% B 46.7% C 1.9% D 1% |
chloroform
trichlorosilane
B
tetrachlorosilane
C
1,1,1,2,2-pentachlorodisilane
D
trichloro(dichloromethyl)silane
E
hexachlorodisilane
Conditions | Yield |
---|---|
copyrolysis (1% CHCl3), quartz tube (575°C, retention time 30 s, yields of products depending on temperature (350 to 600°C)), product condensing; products not isolated, reaction monitoring by mass spectroscopy; | A 1.7% B 25.8% C 5.1% D 0.7% E 1.6% |
silicon
A
tetrachlorosilane
B
copper silicide
C
hexachlorodisilane
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: Cu; CuCl particles were deposited on a Si wafer by dipping in a slurry of CuCl in hexane; coated wafer was heated at 380°C in a furnace for 1-60 min;; mixt. not sepd.;; |
Conditions | Yield |
---|---|
In neat (no solvent) vivious reaction under formation of Ca and Si2Cl6, which are burning;; |
tetrachloromethane
silicon
A
1,1,2,2-tetrachloroethylene
B
tetrachlorosilane
C
hexa-Si-chloro-Si,Si'-(1,2-dichloro-ethene-1,2-diyl)-bis-silane
D
1,2-bis-(trichlorosilyl)acetylene
E
hexachlorodisilane
Conditions | Yield |
---|---|
copper In neat (no solvent) reaction of Si with gaseous CCl4 (in N2) with Cu as catalyst at 110-410°C;; products and yield depend on temp.;; |
tetrachloromethane
silicon
A
tetrachlorosilane
B
hexachlorodisilane
Conditions | Yield |
---|---|
silver In neat (no solvent) byproducts: C2Cl4; heating of Si and CCl4 vapor at 80-300 °C;; | |
manganese In neat (no solvent) byproducts: C2Cl4; heating of Si and CCl4 vapor at 80-300 °C;; | |
nickel In neat (no solvent) byproducts: C2Cl4; heating of Si and CCl4 vapor at 80-300 °C;; |
tetrachlorosilane
hexachlorodisilane
Conditions | Yield |
---|---|
In neat (no solvent) Electric Arc; reaction by a electric Zn light arc in N2 atmosphere;; | |
In neat (no solvent) Electric Arc; reaction by influence of a Zn electric arc on SiCl4 in a N2 atmosphere;; | |
In neat (no solvent) Electric Arc; reaction by influence of a Zn electric arc on SiCl4 in a N2 atmosphere;; | |
In neat (no solvent) Electric Arc; reaction by a electric Zn light arc in N2 atmosphere;; |
Conditions | Yield |
---|---|
In neat (no solvent) passing Cl2 over ferrosilicon with 35-65% Si, begin of a strongly exothermic reactn. at 200 °C, 350 °C (yields of SiCl4: 80%), up to 600 °C (yields of SiCl4: 94%), formation of Si2Cl6 < 450 °C (3-10% of the amt. of SiCl4);; |
chlorine
A
tetrachlorosilane
B
tetrasilicon decachloride
C
dodecachloro pentasilane
D
hexachlorodisilane
E
perchlorotrisilane
Conditions | Yield |
---|---|
In neat (no solvent) passing dry Cl2 through a glass tube, filled with Ca-silicide and heated by a electric spiral at 150-250 °C for about 12-14 days, further products;; fractional distillation;; |
chlorine
A
tetrachlorosilane
B
hexachlorodisilane
C
perchlorotrisilane
Conditions | Yield |
---|---|
In neat (no solvent) reaction of 50 kg ferrosilicon with 50% Si with 143 kg Cl2 in a iron tube at 180-260 °C, yields of Si2Cl6 vary between 4.6-8.6% (depending on reaction temperature);; separation by fractional condensation and distillation; removal of Cl2 by shaking with Hg;; | |
In neat (no solvent) reaction of 50 kg ferrosilicon with 50% Si with 143 kg Cl2 in a iron tube at 180-260 °C, yields of Si2Cl6 vary between 4.6-8.6% (depending on reaction temperature);; separation by fractional condensation and distillation; removal of Cl2 by shaking with Hg;; |
difluorosilylene
chlorine
silicon tetrafluoride
A
ClF2SiSiF2Cl
B
Cl2FSiSiCl3
C
F3SiSiCl3
D
disilicon hexafluoride
E
hexachlorodisilane
Conditions | Yield |
---|---|
In neat (no solvent) The halogen was co-condensed in a flask at -196°C with the mixt. of SiF4 and SiF2 emerging out of the reactor tube; further products;; warmed to room temp.; the volatile products were sepd. and detected by NMR and MS;; |
bromine
perchlorotrisilane
A
tetrachlorosilane
B
hexachlorodisilane
C
dibromo dichlorosilane
D
bromo trichloro silane
E
chloro tribromo silane
Conditions | Yield |
---|---|
In neat (no solvent) dropwise addn. of a mixture of Si3Cl8 and Br2 into a glass tube heated at 500°C under passing CO2 through the tube; reaction with inflammation;; |
Conditions | Yield |
---|---|
In not given Kinetics; H produced by Hg-sensitized photolysis of H2;; monitored by Lyman-α absorption;; |
Conditions | Yield |
---|---|
In neat (no solvent) repeated passing SiCl4 vapor over molten Si;; rapid cooling; fractional distillation;; | |
In neat (no solvent) reaction under a SiCl4 stream at high temperature (melting point of Si);; | |
In neat (no solvent) reaction under a SiCl4 stream at high temperature (melting point of Si);; |
hexaiododisilane
hexachlorodisilane
Conditions | Yield |
---|---|
With mercury dichloride In neat (no solvent) | |
With mercury dichloride at heating;; | |
With HgCl2 In neat (no solvent) | |
With HgCl2 |
Conditions | Yield |
---|---|
In neat (no solvent) vigorous reaction at moderate warming, beginning of the reaction already on mixing of the substances in the cold;; distn. over HgCl2; fractional distn.;; | |
In neat (no solvent) vigorous reaction at moderate warming, beginning of the reaction already on mixing of the substances in the cold;; distn. over HgCl2; fractional distn.;; |
A
tetrachlorosilane
B
hexachlorodisilane
Conditions | Yield |
---|---|
In neat (no solvent) effect of a SnCl2-melt on CaSi2 forms Si2Cl6 and SiCl4;; |
trichlorosilane
hexachlorodisilane
Conditions | Yield |
---|---|
In neat (no solvent) reaction by influence of quiet electric discharges on a mixture of SiHCl3 vapors and H2 or HCl;; | |
In neat (no solvent) reaction by influence of quiet electric discharges on a mixture of SiHCl3 vapors and H2 or HCl;; |
tetrachlorosilane
A
hexachlorodisilane
B
hexachlorodisiloxane
Conditions | Yield |
---|---|
With air In neat (no solvent) Electric Arc; reaction by influence of a Zn electric arc on SiCl4 with air in a N2 atmosphere;; | |
With air In neat (no solvent) Electric Arc; SiCl4 in a Zn electric arc in presence of air;; | |
With air In neat (no solvent) Electric Arc; SiCl4 in a Zn electric arc in presence of air;; | |
With air In neat (no solvent) Electric Arc; reaction by influence of a Zn electric arc on SiCl4 with air in a N2 atmosphere;; |
tetrachlorosilane
oxygen
A
hexachlorodisilane
B
hexachlorodisiloxane
Conditions | Yield |
---|---|
In neat (no solvent) Electric Arc; reaction by influence of a Zn electric arc on SiCl4 with O2 in a N2 atmosphere;; | |
In neat (no solvent) Electric Arc; SiCl4 in a Zn electric arc in presence of O2;; | |
In neat (no solvent) Electric Arc; reaction by influence of a Zn electric arc on SiCl4 with O2 in a N2 atmosphere;; | |
In neat (no solvent) Electric Arc; SiCl4 in a Zn electric arc in presence of O2;; |
perchlorotrisilane
A
tetrachlorosilane
B
hexachlorodisilane
Conditions | Yield |
---|---|
With Br2 In neat (no solvent) | |
With Br2 In neat (no solvent) |
A
tetrachlorosilane
C
trichlorosilane
D
hexachlorodisilane
E
perchlorotrisilane
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: HCl, Si4Cl10; formation by thermic decompn. in an inert gas atmosphere at 760 Torr and 300 °C; cracking process;; | |
In neat (no solvent) byproducts: HCl, Si4Cl10; formation by thermic decompn. in an inert gas atmosphere at 760 Torr and 300 °C; cracking process;; |
A
hydrogenchloride
B
tetrachlorosilane
D
trichlorosilane
E
hexachlorodisilane
Conditions | Yield |
---|---|
In neat (no solvent) thermic decompn.;; cracking process;; | |
In neat (no solvent) thermic decompn.;; cracking process;; |
perchlorotrisilane
A
i-Si4Cl10
B
tetrakis(trichlorosilyl)silane
C
(Cl3Si)3SiSiCl2SiCl3
D
hexachlorodisilane
Conditions | Yield |
---|---|
With Na(Si-t-Bu3) In benzene byproducts: (t-Bu3Si)4Si, t-Bu3SiSi-t-Bu3, t-Bu3SiCl; under N2 or Ar; soln. of Cl3SiSiCl2SiCl3 and Na(Si-t-Bu3) (molar ratio 1:4) in benzene stirred at ambient temp. for 1 d; detd. by (29)Si NMR spectra; |
Methyltrichlorosilane
tetrachlorosilane
hexachlorodisilane
Conditions | Yield |
---|---|
under 225.023 Torr; |
hexachlorodisilane
germaniumtetrachloride
tetraphenyl phosphonium chloride
Conditions | Yield |
---|---|
In dichloromethane at 20℃; for 12h; | 99% |
In dichloromethane at 20℃; for 12h; |
hexachlorodisilane
tetra-n-butylphosphonium chloride
tetrachlorosilane
Conditions | Yield |
---|---|
With 2-methylimidazole at 175℃; for 2.5h; Sealed tube; | 95% |
hexachlorodisilane
Conditions | Yield |
---|---|
With lithium aluminium tetrahydride; calcium hydride In diethylene glycol dimethyl ether at 60℃; for 5h; Inert atmosphere; Reflux; | 94% |
Conditions | Yield |
---|---|
In diethyl ether at -78 - 20℃; Schlenk technique; Inert atmosphere; | 93% |
In diethyl ether at 0 - 20℃; Heating / reflux; | 79% |
Conditions | Yield |
---|---|
In dichloromethane at 20℃; for 1h; Schlenk technique; Inert atmosphere; | 93% |
hexachlorodisilane
1,1,3,3-tetramethyldisilazane
Conditions | Yield |
---|---|
With triethylamine In pentane at -20 - 25℃; for 6h; Inert atmosphere; | 90% |
Conditions | Yield |
---|---|
In diethyl ether at -78 - 20℃; Schlenk technique; Inert atmosphere; | 89% |
lithium aluminium tetrahydride
tetrachlorosilane
hexachlorodisilane
B
monosilane
Conditions | Yield |
---|---|
In diethyl ether reaction of a ether soln. of Si2Cl6 with a ether solution of LiAlH4 (in 15% exceed) in a vacuum at 0 °C;; | A 87% B n/a |
In diethyl ether reaction of a ether soln. of Si2Cl6 with a ether solution of LiAlH4 (in 15% exceed) in a vacuum at 0 °C;; | A 87% B n/a |
hexachlorodisilane
Conditions | Yield |
---|---|
In cyclohexane byproducts: NaCl; N2 atmosphere, stirring (room temp., 3 d, exclusion of light); filtration, removement of volatiles (vacuum), extn. (pentane), evapn. (vacuum), pptn. (-78°C), filtration, washing (cold pentane), drying(vacuum); elem. anal.; | 86% |
sodium[(η(5)-pentamethylcyclopentadienyl)Ru(CO)2]
hexachlorodisilane
Conditions | Yield |
---|---|
In cyclohexane byproducts: NaCl; N2 atmosphere, stirring (room temp., 18 h, exclusion of light); filtration, removement of volatiles (vacuum), extn. (pentane), evapn. (vacuum), pptn. (-78°C), filtration, washing (cold pentane), drying(vacuum); elem. anal.; | 85% |
Conditions | Yield |
---|---|
In hexane at 0 - 20℃; Heating / reflux; | 84% |
In 2-Methylpentane at -40 - 0℃; for 1h; Product distribution / selectivity; Industry scale; |
Conditions | Yield |
---|---|
In diethyl ether at -78 - 20℃; Schlenk technique; Inert atmosphere; | 84% |
Conditions | Yield |
---|---|
In diethyl ether at 0 - 20℃; Heating / reflux; | 82% |
tetrakis(triphenylphosphine) palladium(0)
hexachlorodisilane
Pd(P(C6H5)3)2(SiCl3)2
Conditions | Yield |
---|---|
In toluene complex added to soln. of Si compd., stirred for 19 h, under N2; evapd., washed with ether, recrystd. from benzene/hexane; elem. anal.; | 82% |
Conditions | Yield |
---|---|
With Na In not given | 80% |
hexachlorodisilane
tetrakis(trichlorosilyl)silane
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: SiCl3(SiCl3)(Me2NC2H4NMe2); Si2Cl6 was heated in presence of SiCl3(SiCl3)(Me2NC2H4NMe2) (catalyst) at 55°C for 15 h; NMR monitoring; filtered; evapd. (vac.); | 80% |
With pyridine at 20℃; Reagent/catalyst; Schlenk technique; Inert atmosphere; Cooling; | 73% |
lthium[bis(dimethylphosphanyl)(trimethylsilyl)methanide]
hexachlorodisilane
Conditions | Yield |
---|---|
With lithium dihydronaphthylide radical In tetrahydrofuran at -78℃; warming up to 0 deg C; | 77% |
Conditions | Yield |
---|---|
In diethyl ether Si2Cl6 and 31% excess of Zn(CH3)2 in ether at 85°C in a closed tube;; | 74% |
bis(pentafluorophenyl) sulfoxide
hexachlorodisilane
pentafluorophenyl sulfide
Conditions | Yield |
---|---|
In benzene 22 h, reflux, molar ratio of (C6F5)2SO : Si2Cl6 = 1 : 2; | 73% |
In benzene 22 h, reflux, molar ratio of (C6F5)2SO : Si2Cl6 = 1 : 2; | 73% |
2-thienyl chloride
hexachlorodisilane
germaniumtetrachloride
(2-thienyl)trichlorogermane
Conditions | Yield |
---|---|
In neat (no solvent) pyrolysis, 450-550°C; | 70% |
hexachlorodisilane
1,1,1,2,2-pentachloro-2-[dicarbonyl(η(5)-pentamethylcyclopentadienyl)(trimethylphosphane)tungsten]disilane
Conditions | Yield |
---|---|
In toluene byproducts: LiCl; (N2, exclusion of light); -78°C to room temp., stirring (5 h); filtration, evapn. (vac.), extn. (benzene), concn. (vac.), pptn. with pentane, recrystn. (hot methylcyclohexane); elem. anal.; | 70% |
hexachlorodisilane
pentafluorophenyl lithium
perfluorotetraphenylsilane
Conditions | Yield |
---|---|
In diethyl ether reaction at -79°C, 1 hour, heating to 20°C within 8 hours;heating under reflux, 2 hours;; | 69% |
In diethyl ether reaction at -79°C, 1 hour, heating to 20°C within 8 hours;heating under reflux, 2 hours;; | 69% |
In not given | |
In not given |
hexachlorodisilane
Conditions | Yield |
---|---|
In cyclohexane byproducts: NaCl; N2 atmosphere, stirring (room temp., 18 h, exclusion of light); stirring with benzene (1 h), filtration, removement of solvent (vacuum),pptn. (pentane), filtration, washing (cold pentane), drying (vacuum); e lem. anal.; | 63% |
hexachlorodisilane
1,1,1,2,2-pentachloro-2-[dicarbonyl(η(5)-cyclopentadienyl)(trimethylphosphane)tungsten]disilane
Conditions | Yield |
---|---|
In toluene byproducts: LiCl; (N2, exclusion of light); -78°C to room temp., stirring (5 h); filtration, evapn. (vac.), extn. (benzene), concn. (vac.), pptn. with pentane, recrystn. (hot methylcyclohexane); elem. anal.; | 60% |
hexachlorodisilane
diisobutylaluminium hydride
1,1,1-trichlorodisilane
Conditions | Yield |
---|---|
at 0℃; | 60% |
lithium [dicarbonyl(η(5)-pentamethylcyclopentadienyl)(trimethylphosphine)molybdenum(0)]
hexachlorodisilane
1,1,1,2,2-pentachloro-2-[dicarbonyl(η(5)-pentamethylcyclopentadienyl)(trimethylphosphane)molybdenum]disilane
Conditions | Yield |
---|---|
In benzene byproducts: LiCl; (N2, exclusion of light); stirring (room temp., 12 h); filtration, evapn. (vac.), washing (pentane), addn. of methylcyclohexane, crystn. at -78°C; elem. anal.; | 59% |
hexachlorodisilane
Conditions | Yield |
---|---|
In cyclohexane byproducts: NaCl; N2 atmosphere, stirring (room temp., 14 h, exclusion of light); filtration, removement of volatiles (vacuum), extn. (pentane), evapn. (vacuum), pptn. (-78°C), filtration, washing (cold pentane), drying(vacuum); elem. anal.; | 58% |
hexachlorodisilane
dichlorodiphenylgermane
Conditions | Yield |
---|---|
With tetrabutyl-ammonium chloride In dichloromethane at 20℃; for 12h; | 57% |
With tetrabutyl-ammonium chloride In dichloromethane at 20℃; for 12h; |
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