Hexachlorodisilane supplier | CasNO.13465-77-5

Name
HEXACHLORODISILANE
EINECS 236-704-1
CAS No. 13465-77-5
Article Data49
CAS DataBase
Density 1.597g/cm³
Solubility
Melting Point <0°C
Formula Cl₆Si₂
Boiling Point 144.5 °C at 760 mmHg
Molecular Weight 268.889
Flash Point 78°C
Transport Information UN 2987 8/PG 2
Appearance colourless liquid
Safety 26-36/37/39-45
Risk Codes 14-34
Molecular Structure
Hazard Symbols
Synonyms Disilane,hexachloro- (9CI);Silicon chloride (Si2Cl6) (6CI,7CI,8CI);1,1,1,2,2,2-Hexachlorodisilane;Disilicon hexachloride;Hexachlorodisilane;
PSA 0.00000
LogP 3.37540

Synthetic route

: 7440-21-3
silicon

A: 10026-04-7, 53609-55-5
tetrachlorosilane

B: 13465-77-5
hexachlorodisilane

C: 13596-23-1
perchlorotrisilane

Conditions

Conditions	Yield
In neat (no solvent) chlorination of crude Si at 300-310 °C; best yield of SiCl4;;	A 80% B n/a C n/a

...Expand

: 1450-23-3
hexaphenyldisilane

: 75-36-5
acetyl chloride

: 13465-77-5
hexachlorodisilane

Conditions

Conditions	Yield
With aluminium trichloride In hexane Ph3SiSiPh3, AlCl3 and CH3COCl in hexane were stirred overnight; hexane added; upper phase septd.; hexane removed (vac.); redistd.;	55%

: 67-66-3
chloroform

: 10025-78-2
trichlorosilane

A: 1,1,2,2-tetrachlorodisilane

B: 10026-04-7, 53609-55-5
tetrachlorosilane

C: 31411-98-0
1,1,1,2,2-pentachlorodisilane

D: 13465-77-5
hexachlorodisilane

Conditions

Conditions	Yield
byproducts: CH2Cl2; copyrolysis (1:1), quartz tube (550°C, yields of products depending on temperature (350 to 600°C)), product condensing; products not isolated, reaction monitoring by mass spectroscopy;	A 1.3% B 46.7% C 1.9% D 1%

...Expand

: 67-66-3
chloroform

: 10025-78-2
trichlorosilane

A: 1,1,2,2-tetrachlorodisilane

B: 10026-04-7, 53609-55-5
tetrachlorosilane

C: 31411-98-0
1,1,1,2,2-pentachlorodisilane

D: 1558-24-3
trichloro(dichloromethyl)silane

E: 13465-77-5
hexachlorodisilane

Conditions

Conditions	Yield
copyrolysis (1% CHCl3), quartz tube (575°C, retention time 30 s, yields of products depending on temperature (350 to 600°C)), product condensing; products not isolated, reaction monitoring by mass spectroscopy;	A 1.7% B 25.8% C 5.1% D 0.7% E 1.6%

...Expand

: copper(l) chloride

: 7440-21-3
silicon

A: 10026-04-7, 53609-55-5
tetrachlorosilane

B: 12134-36-0
copper silicide

C: 13465-77-5
hexachlorodisilane

Conditions

Conditions	Yield
In neat (no solvent) byproducts: Cu; CuCl particles were deposited on a Si wafer by dipping in a slurry of CuCl in hexane; coated wafer was heated at 380°C in a furnace for 1-60 min;; mixt. not sepd.;;

...Expand

: calcium chloride

: 7440-21-3
silicon

A: 13465-77-5
hexachlorodisilane

B: 7440-70-2
calcium

Conditions

Conditions	Yield
In neat (no solvent) vivious reaction under formation of Ca and Si2Cl6, which are burning;;

...Expand

: 56-23-5
tetrachloromethane

: 7440-21-3
silicon

A: 127-18-4
1,1,2,2-tetrachloroethylene

B: 10026-04-7, 53609-55-5
tetrachlorosilane

C: 5926-33-0
hexa-Si-chloro-Si,Si'-(1,2-dichloro-ethene-1,2-diyl)-bis-silane

D: 18038-55-6
1,2-bis-(trichlorosilyl)acetylene

E: 13465-77-5
hexachlorodisilane

Conditions

Conditions	Yield
copper In neat (no solvent) reaction of Si with gaseous CCl4 (in N2) with Cu as catalyst at 110-410°C;; products and yield depend on temp.;;

...Expand

: 56-23-5
tetrachloromethane

: 7440-21-3
silicon

A: 10026-04-7, 53609-55-5
tetrachlorosilane

B: 13465-77-5
hexachlorodisilane

Conditions

Conditions	Yield
silver In neat (no solvent) byproducts: C2Cl4; heating of Si and CCl4 vapor at 80-300 °C;;
manganese In neat (no solvent) byproducts: C2Cl4; heating of Si and CCl4 vapor at 80-300 °C;;
nickel In neat (no solvent) byproducts: C2Cl4; heating of Si and CCl4 vapor at 80-300 °C;;

...Expand

: 10026-04-7, 53609-55-5
tetrachlorosilane

: 13465-77-5
hexachlorodisilane

Conditions

Conditions	Yield
In neat (no solvent) Electric Arc; reaction by a electric Zn light arc in N2 atmosphere;;
In neat (no solvent) Electric Arc; reaction by influence of a Zn electric arc on SiCl4 in a N2 atmosphere;;
In neat (no solvent) Electric Arc; reaction by influence of a Zn electric arc on SiCl4 in a N2 atmosphere;;
In neat (no solvent) Electric Arc; reaction by a electric Zn light arc in N2 atmosphere;;

ferrosilicon: ferrosilicon

: 7782-50-5
chlorine

A: 10026-04-7, 53609-55-5
tetrachlorosilane

B: 13465-77-5
hexachlorodisilane

Conditions

Conditions	Yield
In neat (no solvent) passing Cl2 over ferrosilicon with 35-65% Si, begin of a strongly exothermic reactn. at 200 °C, 350 °C (yields of SiCl4: 80%), up to 600 °C (yields of SiCl4: 94%), formation of Si2Cl6 < 450 °C (3-10% of the amt. of SiCl4);;

...Expand

Si(b),Ca(30-35) (X%): Si(b),Ca(30-35) (X%)

: 7782-50-5
chlorine

A: 10026-04-7, 53609-55-5
tetrachlorosilane

B: 13763-19-4
tetrasilicon decachloride

C: 13596-24-2
dodecachloro pentasilane

D: 13465-77-5
hexachlorodisilane

E: 13596-23-1
perchlorotrisilane

Conditions

Conditions	Yield
In neat (no solvent) passing dry Cl2 through a glass tube, filled with Ca-silicide and heated by a electric spiral at 150-250 °C for about 12-14 days, further products;; fractional distillation;;

...Expand

silicon iron: silicon iron

: 7782-50-5
chlorine

A: 10026-04-7, 53609-55-5
tetrachlorosilane

B: 13465-77-5
hexachlorodisilane

C: 13596-23-1
perchlorotrisilane

Conditions

Conditions	Yield
In neat (no solvent) reaction of 50 kg ferrosilicon with 50% Si with 143 kg Cl2 in a iron tube at 180-260 °C, yields of Si2Cl6 vary between 4.6-8.6% (depending on reaction temperature);; separation by fractional condensation and distillation; removal of Cl2 by shaking with Hg;;
In neat (no solvent) reaction of 50 kg ferrosilicon with 50% Si with 143 kg Cl2 in a iron tube at 180-260 °C, yields of Si2Cl6 vary between 4.6-8.6% (depending on reaction temperature);; separation by fractional condensation and distillation; removal of Cl2 by shaking with Hg;;

...Expand

: 13966-66-0
difluorosilylene

: 7782-50-5
chlorine

: 7783-61-1
silicon tetrafluoride

A: 108737-33-3
ClF2SiSiF2Cl

B: 18356-60-0
Cl2FSiSiCl3

C: 108737-34-4
F3SiSiCl3

D: 13830-68-7
disilicon hexafluoride

E: 13465-77-5
hexachlorodisilane

Conditions

Conditions	Yield
In neat (no solvent) The halogen was co-condensed in a flask at -196°C with the mixt. of SiF4 and SiF2 emerging out of the reactor tube; further products;; warmed to room temp.; the volatile products were sepd. and detected by NMR and MS;;

...Expand

: 7726-95-6
bromine

: 13596-23-1
perchlorotrisilane

A: 10026-04-7, 53609-55-5
tetrachlorosilane

B: 13465-77-5
hexachlorodisilane

C: 13465-75-3
dibromo dichlorosilane

D: 13465-74-2
bromo trichloro silane

E: 13465-76-4
chloro tribromo silane

Conditions

Conditions	Yield
In neat (no solvent) dropwise addn. of a mixture of Si3Cl8 and Br2 into a glass tube heated at 500°C under passing CO2 through the tube; reaction with inflammation;;

...Expand

: hydrogen

: 10025-78-2
trichlorosilane

A: 13465-77-5
hexachlorodisilane

B: 1333-74-0
hydrogen

Conditions

Conditions	Yield
In not given Kinetics; H produced by Hg-sensitized photolysis of H2;; monitored by Lyman-α absorption;;

...Expand

: 10026-04-7, 53609-55-5
tetrachlorosilane

: 7440-21-3
silicon

: 13465-77-5
hexachlorodisilane

Conditions

Conditions	Yield
In neat (no solvent) repeated passing SiCl4 vapor over molten Si;; rapid cooling; fractional distillation;;
In neat (no solvent) reaction under a SiCl4 stream at high temperature (melting point of Si);;
In neat (no solvent) reaction under a SiCl4 stream at high temperature (melting point of Si);;

: 13510-43-5
hexaiododisilane

: 13465-77-5
hexachlorodisilane

Conditions

Conditions	Yield
With mercury dichloride In neat (no solvent)
With mercury dichloride at heating;;
With HgCl2 In neat (no solvent)
With HgCl2

: 13510-43-5
hexaiododisilane

: mercury dichloride

: 13465-77-5
hexachlorodisilane

Conditions

Conditions	Yield
In neat (no solvent) vigorous reaction at moderate warming, beginning of the reaction already on mixing of the substances in the cold;; distn. over HgCl2; fractional distn.;;
In neat (no solvent) vigorous reaction at moderate warming, beginning of the reaction already on mixing of the substances in the cold;; distn. over HgCl2; fractional distn.;;

: calcium silicide

: tin(ll) chloride

A: 10026-04-7, 53609-55-5
tetrachlorosilane

B: 13465-77-5
hexachlorodisilane

Conditions

Conditions	Yield
In neat (no solvent) effect of a SnCl2-melt on CaSi2 forms Si2Cl6 and SiCl4;;

...Expand

: 10025-78-2
trichlorosilane

: 13465-77-5
hexachlorodisilane

Conditions

Conditions	Yield
In neat (no solvent) reaction by influence of quiet electric discharges on a mixture of SiHCl3 vapors and H2 or HCl;;
In neat (no solvent) reaction by influence of quiet electric discharges on a mixture of SiHCl3 vapors and H2 or HCl;;

: 10026-04-7, 53609-55-5
tetrachlorosilane

A: 13465-77-5
hexachlorodisilane

B: 14986-21-1
hexachlorodisiloxane

Conditions

Conditions	Yield
With air In neat (no solvent) Electric Arc; reaction by influence of a Zn electric arc on SiCl4 with air in a N2 atmosphere;;
With air In neat (no solvent) Electric Arc; SiCl4 in a Zn electric arc in presence of air;;
With air In neat (no solvent) Electric Arc; SiCl4 in a Zn electric arc in presence of air;;
With air In neat (no solvent) Electric Arc; reaction by influence of a Zn electric arc on SiCl4 with air in a N2 atmosphere;;

: 10026-04-7, 53609-55-5
tetrachlorosilane

: 80937-33-3
oxygen

A: 13465-77-5
hexachlorodisilane

B: 14986-21-1
hexachlorodisiloxane

Conditions

Conditions	Yield
In neat (no solvent) Electric Arc; reaction by influence of a Zn electric arc on SiCl4 with O2 in a N2 atmosphere;;
In neat (no solvent) Electric Arc; SiCl4 in a Zn electric arc in presence of O2;;
In neat (no solvent) Electric Arc; reaction by influence of a Zn electric arc on SiCl4 with O2 in a N2 atmosphere;;
In neat (no solvent) Electric Arc; SiCl4 in a Zn electric arc in presence of O2;;

...Expand

: 13596-23-1
perchlorotrisilane

A: 10026-04-7, 53609-55-5
tetrachlorosilane

B: 13465-77-5
hexachlorodisilane

Conditions

Conditions	Yield
With Br2 In neat (no solvent)
With Br2 In neat (no solvent)

: Si10Cl20H2

A: 10026-04-7, 53609-55-5
tetrachlorosilane

B: silicon monochloride

C: 10025-78-2
trichlorosilane

D: 13465-77-5
hexachlorodisilane

E: 13596-23-1
perchlorotrisilane

Conditions

Conditions	Yield
In neat (no solvent) byproducts: HCl, Si4Cl10; formation by thermic decompn. in an inert gas atmosphere at 760 Torr and 300 °C; cracking process;;
In neat (no solvent) byproducts: HCl, Si4Cl10; formation by thermic decompn. in an inert gas atmosphere at 760 Torr and 300 °C; cracking process;;

...Expand

: Si10Cl20H2

A: 7647-01-0
hydrogenchloride

B: 10026-04-7, 53609-55-5
tetrachlorosilane

C: silicon monochloride

D: 10025-78-2
trichlorosilane

E: 13465-77-5
hexachlorodisilane

Conditions

Conditions	Yield
In neat (no solvent) thermic decompn.;; cracking process;;
In neat (no solvent) thermic decompn.;; cracking process;;

...Expand

: 13596-23-1
perchlorotrisilane

A: 50683-29-9
i-Si4Cl10

B: 50350-62-4
tetrakis(trichlorosilyl)silane

C: 1196525-75-3
(Cl3Si)3SiSiCl2SiCl3

D: 13465-77-5
hexachlorodisilane

Conditions

Conditions	Yield
With Na(Si-t-Bu3) In benzene byproducts: (t-Bu3Si)4Si, t-Bu3SiSi-t-Bu3, t-Bu3SiCl; under N2 or Ar; soln. of Cl3SiSiCl2SiCl3 and Na(Si-t-Bu3) (molar ratio 1:4) in benzene stirred at ambient temp. for 1 d; detd. by (29)Si NMR spectra;

...Expand

: 75-79-6
Methyltrichlorosilane

: 10026-04-7, 53609-55-5
tetrachlorosilane

: 13465-77-5
hexachlorodisilane

Conditions

Conditions	Yield
under 225.023 Torr;

: 13465-77-5
hexachlorodisilane

: 10038-98-9
germaniumtetrachloride

: 2001-45-8
tetraphenyl phosphonium chloride

: Cl9GeSi3(1-)*C24H20P(1+)

Conditions

Conditions	Yield
In dichloromethane at 20℃; for 12h;	99%
In dichloromethane at 20℃; for 12h;

...Expand

: 13465-77-5
hexachlorodisilane

: 2304-30-5
tetra-n-butylphosphonium chloride

: 10026-04-7, 53609-55-5
tetrachlorosilane

Conditions

Conditions	Yield
With 2-methylimidazole at 175℃; for 2.5h; Sealed tube;	95%

: 13465-77-5
hexachlorodisilane

: disilane

Conditions

Conditions	Yield
With lithium aluminium tetrahydride; calcium hydride In diethylene glycol dimethyl ether at 60℃; for 5h; Inert atmosphere; Reflux;	94%

: 13465-77-5
hexachlorodisilane

: 75-64-9
tert-butylamine

: 690973-76-3
(HNBut)2(Cl)Si-Si(Cl)(HNBut)2

Conditions

Conditions	Yield
In diethyl ether at -78 - 20℃; Schlenk technique; Inert atmosphere;	93%
In diethyl ether at 0 - 20℃; Heating / reflux;	79%

: 13465-77-5
hexachlorodisilane

: 56-34-8
tetraethylammonium chloride

: 10038-98-9
germaniumtetrachloride

: Cl9GeSi3(1-)*C8H20N(1+)

Conditions

Conditions	Yield
In dichloromethane at 20℃; for 1h; Schlenk technique; Inert atmosphere;	93%

...Expand

: 13465-77-5
hexachlorodisilane

: 15933-59-2
1,1,3,3-tetramethyldisilazane

: bisdimethylsilyl pentachlorodisilylamine

Conditions

Conditions	Yield
With triethylamine In pentane at -20 - 25℃; for 6h; Inert atmosphere;	90%

: 13465-77-5
hexachlorodisilane

: 142-84-7
di-n-propylamine

: C24H56Cl2N4Si2

Conditions

Conditions	Yield
In diethyl ether at -78 - 20℃; Schlenk technique; Inert atmosphere;	89%

: 16853-85-3
lithium aluminium tetrahydride

: 10026-04-7, 53609-55-5
tetrachlorosilane

: 13465-77-5
hexachlorodisilane

A: disilane

B: 7440-21-3
monosilane

Conditions

Conditions	Yield
In diethyl ether reaction of a ether soln. of Si2Cl6 with a ether solution of LiAlH4 (in 15% exceed) in a vacuum at 0 °C;;	A 87% B n/a
In diethyl ether reaction of a ether soln. of Si2Cl6 with a ether solution of LiAlH4 (in 15% exceed) in a vacuum at 0 °C;;	A 87% B n/a

...Expand

: sodium dicarbonyl(cyclopentadienyl)ferrate

: 13465-77-5
hexachlorodisilane

: 1-[dicarbonyl(η(5)-cyclopentadienyl)ferrio]-1,1,2,2,-pentachlorodisilane

Conditions

Conditions	Yield
In cyclohexane byproducts: NaCl; N2 atmosphere, stirring (room temp., 3 d, exclusion of light); filtration, removement of volatiles (vacuum), extn. (pentane), evapn. (vacuum), pptn. (-78°C), filtration, washing (cold pentane), drying(vacuum); elem. anal.;	86%

: 174534-93-1
sodium[(η(5)-pentamethylcyclopentadienyl)Ru(CO)2]

: 13465-77-5
hexachlorodisilane

: 1,1,2,2,2-pentachloro-1-[dicarbonyl(η(5)-pentamethylcyclopdentadienyl)ruthenio]disilane

Conditions

Conditions	Yield
In cyclohexane byproducts: NaCl; N2 atmosphere, stirring (room temp., 18 h, exclusion of light); filtration, removement of volatiles (vacuum), extn. (pentane), evapn. (vacuum), pptn. (-78°C), filtration, washing (cold pentane), drying(vacuum); elem. anal.;	85%

: 13465-77-5
hexachlorodisilane

: 75-04-7
ethylamine

: 532980-53-3
hexakisethylaminodisilane

Conditions

Conditions	Yield
In hexane at 0 - 20℃; Heating / reflux;	84%
In 2-Methylpentane at -40 - 0℃; for 1h; Product distribution / selectivity; Industry scale;

: 13465-77-5
hexachlorodisilane

: 124-02-7
diallylamine

: C24H40Cl2N4Si2

Conditions

Conditions	Yield
In diethyl ether at -78 - 20℃; Schlenk technique; Inert atmosphere;	84%

: 13465-77-5
hexachlorodisilane

: 75-04-7
ethylamine

: tetrakisdiethylamidodichlorodisilane

Conditions

Conditions	Yield
In diethyl ether at 0 - 20℃; Heating / reflux;	82%

: 14221-01-3
tetrakis(triphenylphosphine) palladium(0)

: 13465-77-5
hexachlorodisilane

: 81313-98-6
Pd(P(C6H5)3)2(SiCl3)2

Conditions

Conditions	Yield
In toluene complex added to soln. of Si compd., stirred for 19 h, under N2; evapd., washed with ether, recrystd. from benzene/hexane; elem. anal.;	82%

: 543-59-9
1-Chloropentane

: 13465-77-5
hexachlorodisilane

: 3429-63-8
tetraamylsilane

Conditions

Conditions	Yield
With Na In not given	80%

: 13465-77-5
hexachlorodisilane

: 50350-62-4
tetrakis(trichlorosilyl)silane

Conditions

Conditions	Yield
In neat (no solvent) byproducts: SiCl3(SiCl3)(Me2NC2H4NMe2); Si2Cl6 was heated in presence of SiCl3(SiCl3)(Me2NC2H4NMe2) (catalyst) at 55°C for 15 h; NMR monitoring; filtered; evapd. (vac.);	80%
With pyridine at 20℃; Reagent/catalyst; Schlenk technique; Inert atmosphere; Cooling;	73%

: 102493-28-7
lthium[bis(dimethylphosphanyl)(trimethylsilyl)methanide]

: 13465-77-5
hexachlorodisilane

: C16H42P4Si3

Conditions

Conditions	Yield
With lithium dihydronaphthylide radical In tetrahydrofuran at -78℃; warming up to 0 deg C;	77%

: 13465-77-5
hexachlorodisilane

: 544-97-8
dimethyl zinc(II)

: 1450-14-2
1,1,1,2,2,2-hexamethyldisilane

Conditions

Conditions	Yield
In diethyl ether Si2Cl6 and 31% excess of Zn(CH3)2 in ether at 85°C in a closed tube;;	74%

: 26346-84-9
bis(pentafluorophenyl) sulfoxide

: 13465-77-5
hexachlorodisilane

: 1043-50-1
pentafluorophenyl sulfide

Conditions

Conditions	Yield
In benzene 22 h, reflux, molar ratio of (C6F5)2SO : Si2Cl6 = 1 : 2;	73%
In benzene 22 h, reflux, molar ratio of (C6F5)2SO : Si2Cl6 = 1 : 2;	73%

: 96-43-5
2-thienyl chloride

: 13465-77-5
hexachlorodisilane

: 10038-98-9
germaniumtetrachloride

: 119708-57-5
(2-thienyl)trichlorogermane

Conditions

Conditions	Yield
In neat (no solvent) pyrolysis, 450-550°C;	70%

...Expand

: lithium dicarbonyl(η(5)-pentamethylcyclopentadienyl)(trimethylphosphane)tungstate

: 13465-77-5
hexachlorodisilane

: 174134-97-5
1,1,1,2,2-pentachloro-2-[dicarbonyl(η(5)-pentamethylcyclopentadienyl)(trimethylphosphane)tungsten]disilane

Conditions

Conditions	Yield
In toluene byproducts: LiCl; (N2, exclusion of light); -78°C to room temp., stirring (5 h); filtration, evapn. (vac.), extn. (benzene), concn. (vac.), pptn. with pentane, recrystn. (hot methylcyclohexane); elem. anal.;	70%

: 13465-77-5
hexachlorodisilane

: 1076-44-4
pentafluorophenyl lithium

: 1524-78-3
perfluorotetraphenylsilane

Conditions

Conditions	Yield
In diethyl ether reaction at -79°C, 1 hour, heating to 20°C within 8 hours;heating under reflux, 2 hours;;	69%
In diethyl ether reaction at -79°C, 1 hour, heating to 20°C within 8 hours;heating under reflux, 2 hours;;	69%
In not given
In not given

: sodium (pentamethylcyclopentadienyl)dicarbonylferrate

: 13465-77-5
hexachlorodisilane

: 1,1,2,2,2-pentachloro-1-[dicarbonyl(η(5)-pentamethylcyclopdentadienyl)ferrio]disilane

Conditions

Conditions	Yield
In cyclohexane byproducts: NaCl; N2 atmosphere, stirring (room temp., 18 h, exclusion of light); stirring with benzene (1 h), filtration, removement of solvent (vacuum),pptn. (pentane), filtration, washing (cold pentane), drying (vacuum); e lem. anal.;	63%

: lithium [dicarbonyl(η(5)-cyclopentadienyl)(trimethylphosphine)tungsten(0)]

: 13465-77-5
hexachlorodisilane

: 174134-95-3
1,1,1,2,2-pentachloro-2-[dicarbonyl(η(5)-cyclopentadienyl)(trimethylphosphane)tungsten]disilane

Conditions

Conditions	Yield
In toluene byproducts: LiCl; (N2, exclusion of light); -78°C to room temp., stirring (5 h); filtration, evapn. (vac.), extn. (benzene), concn. (vac.), pptn. with pentane, recrystn. (hot methylcyclohexane); elem. anal.;	60%

: 13465-77-5
hexachlorodisilane

: 1191-15-7
diisobutylaluminium hydride

: 78228-96-3
1,1,1-trichlorodisilane

Conditions

Conditions	Yield
at 0℃;	60%

: 172217-74-2
lithium [dicarbonyl(η(5)-pentamethylcyclopentadienyl)(trimethylphosphine)molybdenum(0)]

: 13465-77-5
hexachlorodisilane

: 174134-96-4
1,1,1,2,2-pentachloro-2-[dicarbonyl(η(5)-pentamethylcyclopentadienyl)(trimethylphosphane)molybdenum]disilane

Conditions

Conditions	Yield
In benzene byproducts: LiCl; (N2, exclusion of light); stirring (room temp., 12 h); filtration, evapn. (vac.), washing (pentane), addn. of methylcyclohexane, crystn. at -78°C; elem. anal.;	59%

: Na[CpRu(CO)2]

: 13465-77-5
hexachlorodisilane

: 1-[dicarbonyl(η(5)-pentamethylcyclopentadienyl)ruthenio]-1,1,2,2,-pentachlorodisilane

Conditions

Conditions	Yield
In cyclohexane byproducts: NaCl; N2 atmosphere, stirring (room temp., 14 h, exclusion of light); filtration, removement of volatiles (vacuum), extn. (pentane), evapn. (vacuum), pptn. (-78°C), filtration, washing (cold pentane), drying(vacuum); elem. anal.;	58%

: 13465-77-5
hexachlorodisilane

: 1613-66-7
dichlorodiphenylgermane

: 1,2-bis(trichlorosilyl)-1,1,2,2-tetraphenyldigermane

Conditions

Conditions	Yield
With tetrabutyl-ammonium chloride In dichloromethane at 20℃; for 12h;	57%
With tetrabutyl-ammonium chloride In dichloromethane at 20℃; for 12h;

Hexachlorodisilane Specification

The Hexachlorodisilane , with cas registry number of 13465-77-5, is a kind of categories in (1) Si (Classes of Silicon Compounds) ; (2) Si-Cl Compounds;Si-Si Compounds ; (3) Trichlorosilanes ; (4) Self Assembly&Contact Printing ; (5) Self-Assembly Materials ; (6) Silane Coupling Agents/Adhesion Promoters ; (7) SilanesSelf Assembly&Contact Printing. Its IUPAC name is trichloro(trichlorosilyl)silane . And its systematic name is called hexachlorodisilane . This compound is stable, but reacts violently with water. It is incompatible with water, moisture, acids, strong bases, oxidizing agents, alcohols. It is sensitive to moisture.

Physical properties of Hexachlorodisilane are: (1) ACD/LogP: 8.55 ; (2) # of Rule of 5 Violations: 1 ; (3) ACD/LogD (pH 5.5): 8.55 ; (4) ACD/LogD (pH 7.4): 8.55 ; (5) ACD/BCF (pH 5.5): 1000000 ; (6) ACD/BCF (pH 7.4): 1000000 ; (7) #H bond acceptors: 0 ; (8) #H bond donors: 0 ; (9) #Freely Rotating Bonds: 1 ; (10) Index of Refraction: 1.488 ; (11) Molar Refractivity: 48.57 cm³ ; (12) Molar Volume: 168.3 cm³ ; (13) Surface Tension: 26.2 dyne/cm ; (14) Enthalpy of Vaporization: 36.58 kJ/mol ; (15) Vapour Pressure: 6.39 mmHg at 25°C ; (16) Refractive index: n20/D 1.475(lit.)

Preparation of Hexachlorodisilane : Condensing the exhaust gas from the furnace for producing polysilicon by chlorosilane and hydrogen in order to separate out the hydrogen. The condensate will be distillated to separate out the unreacted chlorosilane and silicon tetrachloride (by-product), and then we distill it to recycle the hexachlorodisilane . Tetrachlorodisilane can be also recycled at the same time. The purity of the recycled hexachlorodisilane and tetrachlorodisilane will be much high than the production made of the silicon metal.

When you are using this chemical, please be cautious about it as the following:
The Hexachlorodisilane reacts violently with water and causes burns. Wear suitable protective clothing, gloves and eye/face protection before use it. If contact with eyes, rinse immediately with plenty of water and seek medical advice. If you feel unwell, seek medical advice immediately. When heated to decomposition or on contact with water, it emits toxic fumes of HCl and Cl^-. It should be stored at temperature of below 5° C.

You can still convert the following datas into molecular structure:
(1) SMILES:Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl ;
(2) InChI:InChI=1/Cl6Si2/c1-7(2,3)8(4,5)6 ;
(3) InChIKey:LXEXBJXDGVGRAR-UHFFFAOYAZ

Product Name

HEXACHLORODISILANE

Synthetic route

Hexachlorodisilane Specification

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