Dayangchem's R&D center can offer custom synthesis according to the contract research and development services for the fine chemicals, pharmaceutical, biotechnique and some of the other chemicals. DayangChem can provide different quantities
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Zibo Hangyu Biotechnology Development Co., Ltd is a leading manufacturer and supplier of chemicals in China. We develop produce and distribute high quality pharmaceuticals, intermediates, special chemicals and OLED intermediates and other fine chemi
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inquirySuperior quality, moderate price & quick delivery. Appearance:clear colorless liquid Storage:Stored in cool, dry and ventilation place; Away from fire and heat Package:1kg/bag, 1kg/drum or 25kg/drum or as per your request. Application:Used in t
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inquiryGERMANIUM(IV) CHLORIDE; GeCl4; Germane, tetrachloro-; Germane, tetrachloro-; Germanium chloride (GeCl4); Germanium, tetrachloro-; tetrachloro-german; Tetrachlorogermane CAS No.: 10038-98-9 Molecular formula: Cl4Ge Molecular weight: 214.45
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inquiryhigh purity lowest priceAppearance:solid or liquid Storage:in sealed air resistant place Package:drum and bag Application:for pharma use Transportation:by sea or air Port:Beijing or Guangzhou
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inquiryR & D enterprises have their own stock in stock Package:1kg Application:pharmaceutical intermediates
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Product Description Description & Specification Category Pharmaceutical Raw Materials, Fine Chemicals, Bulk drug Standard Medical standard
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inquiryAnsciep Chemical is a professional enterprise manufacturing and distributing fine chemicals and speciality chemicals. We have been dedicated to heterocycle compounds and phenyl rings for tens of years. This is our mature product for export. Our quali
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inquiryGermanium tetrachloride CAS NO. 10038-98-9 Application:Germanium tetrachloride CAS NO. 10038-98-9
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inquiryGermanium tetrachloride CAS NO. 10038-98-9Appearance:detailed in specifications Storage:Keep in dry and cool place Package:according to clients requirement Application:It is an important raw material and intermediate used in Organic Synthesis,Pharmac
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inquiryin stock Application:10038-98-9
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inquiryGermanium chloride Basic information Product Name: Germanium chloride
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Min.Order:100 Gram
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inquiryProfile HeBei Ruishun Trade Co.LTD, registered capital one million,have a production of pharmaceutical raw materials, pharmaceutical raw materials factory reagent r&d center,Seek development by credit
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inquiryQingdao Sigma Chemical Ltd is is a global chemical industry manufacturers and suppliers of pharmaceuticals and intermediates, peptide,Nootropis etc API, food and feed additives, herbal extracts, agrochemicals and fine chemicals etc. Our Labo
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inquiryBest quality & Attractive price & Professional service; Trial & Pilot & CommercialHenan Fine Chemicals Co., LTD. is a diversified technology - oriented integrated company, which mainly concentrates on fine chemicals. Our company is committed to becom
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inquiryNanjing Chemlin Chemical Industry Co., Ltd was established in Aug,1999, located in the industrial park of Nanjing University of Technology, It is a private enterprises in Jiangsu Province with 1200 square meters’ R&D center. Our R&D center has a well
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inquiry1.High Quality Specialty Chemicals2.Expertise and Experience in Manufacturing High Purity, High Quality Chemicals3.Long Term Focus in Inorganics, Organometallics and Metals4.ISO 9001 CertifiedAppearance:colorless liq.
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inquirygermanium
germaniumtetrachloride
Conditions | Yield |
---|---|
In melt Electrolysis; electrolysis in AlCl3-NaCl-KCl, NaCl-KCl, NaCl-PbCl2, LiCl-KCl, or NaCl-AlCl3 melts;; condensation of the anodic gas; purity 99.9%; | 100% |
With chloroform In neat (no solvent) react. of evaporated Ge vapor with CHCl3 (at 50°C for 3 h); GLC; | 0.5% |
With chlorine In neat (no solvent) Ge in small pieces was chlorinated at 460°C; purified by column distn. at 83°C; |
triphenylantimony dichloride
A
triphenylantimony
B
germaniumtetrachloride
Conditions | Yield |
---|---|
In toluene byproducts: dioxane; standing (room temperature, 24 h); liquid chromy.; | A 93% B 91% |
B
triphenylgermane
C
germaniumtetrachloride
Conditions | Yield |
---|---|
With hydrogenchloride In toluene byproducts: H2; mixt. keeping for 1 d at room temp. in argon atmosphere or in evac. sealed ampul; ppt. washing; elem. anal., GLC anal., mass spoectroscopy; | A 92% B 51% C n/a |
B
triphenylgermane
C
germaniumtetrachloride
Conditions | Yield |
---|---|
With hydrogenchloride In toluene byproducts: H2; mixt. keeping for 1 d at room temp. in argon atmosphere or in evac. sealed ampul; ppt. washing; elem. anal., GLC anal., mass spoectroscopy; | A 87% B 45% C n/a |
Conditions | Yield |
---|---|
treating Ge(NCO)4 with C6H5PCl2;; | 78% |
treating Ge(NCO)4 with C6H5PCl2;; | 78% |
germanium(IV) isocyanate
Dichlorophenylphosphine
germaniumtetrachloride
Conditions | Yield |
---|---|
In neat (no solvent) distillation with C6H5PCl2;; | 78% |
In neat (no solvent) distillation with C6H5PCl2;; | 78% |
Conditions | Yield |
---|---|
In neat (no solvent) reaction of gaseous GeF4 with H2O-free AlCl3 in special app. at 210 °C (1 atm);; | 78% |
In neat (no solvent) reaction of gaseous GeF4 with H2O-free AlCl3 in special app. at 210 °C (1 atm);; | 78% |
In neat (no solvent) reaction of gaseous GeF4 with H2O-free AlCl3 in special app. at 200 °C (1 atm);; | 43% |
In neat (no solvent) reaction of gaseous GeF4 with H2O-free AlCl3 in special app. at 200 °C (1 atm);; | 43% |
A
(P(C6H5)3)2PtCl2(Ge(C6H5)3)(H)
B
triphenylgermane
C
germaniumtetrachloride
Conditions | Yield |
---|---|
With hydrogenchloride In toluene byproducts: H2; mixt. keeping for 1 d at room temp. in argon atmosphere or in evac. sealed ampul; ppt. washing, HgCl2 recrystn. (ethanol); elem. anal., GLC anal., mass spoectroscopy; | A 77% B 40% C n/a D 73% |
germanium tetrabromide
Dichlorophenylphosphine
germaniumtetrachloride
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: GeCl3Br; distillation of GeBr4 with C6H5PCl2;; product contg. GeCl3Br;; | 57% |
tetrachloromethane
germanium
A
germaniumtetrachloride
B
trichloro(trichloromethyl)germane
Conditions | Yield |
---|---|
reaction of germanium atoms with organic halide by co-condensation under vac. at 77 K; GC-MASS; | A 50% B 7% |
In neat (no solvent) react. of evaporated Ge vapor with CCl4 (at 50°C for 3 h); GLC; | A 1% B 16% |
With copper In gas vaporization of Ge and Cu (alumina-coated tungsten crucible, 1200-1300°C, 5E-3 Torr), introduction into reaction flask (cooled with liq. N2 during Ge vaporization) together with vapor of organic halide, warming to room temp., standing for 1.5 h; GC-MS, GLC; | A <10 B 12% |
Conditions | Yield |
---|---|
In neat (no solvent) reaction of gaseous GeF4 with H2O-free MgCl2 in special app. at 610 °C (1 atm);; | 45% |
In neat (no solvent) reaction of gaseous GeF4 with H2O-free MgCl2 in special app. at 610 °C (1 atm);; | 45% |
Conditions | Yield |
---|---|
In neat (no solvent) reaction of gaseous GeF4 with H2O-free FeCl3 in special app. at 350 °C (1 atm);; | 40% |
In neat (no solvent) reaction of gaseous GeF4 with H2O-free FeCl3 in special app. at 350 °C (1 atm);; | 40% |
trichlorophenylgermane
3-chloroprop-1-ene
A
germaniumtetrachloride
B
allyl(trichloro)germane
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: benzene, chlorobenzene; passing through tubular quartz reactor (contact time 30 s, temperature 500°C; yield 9.8 and 11.3% at 550°C depending on the reactant ratio); products condensing; | A n/a B 37.1% |
Methyltrichlorosilane
dimethyldiphenylgermane
A
germaniumtetrachloride
B
phenyldimethylchlorogermane
C
methylphenylgermanium dichloride
D
trichlorophenylgermane
Conditions | Yield |
---|---|
aluminium trichloride In solid Si-compound reacted with (CH3)2Ge(C6H5)2 at 110-120°C for 3 h in presence of AlCl3; | A 35.9% B 5.1% C 4.1% D 6.7% |
Methyltrichlorosilane
dimethyldiphenylgermane
A
chlorotriphenylgermane
B
germaniumtetrachloride
C
phenyldimethylchlorogermane
D
trichlorophenylgermane
Conditions | Yield |
---|---|
aluminium trichloride In solid Si-compound reacted with (CH3)2Ge(C6H5)2 at 110-120°C for 3 h in presence of AlCl3; | A 2.3% B 35.5% C 10.3% D 2.7% |
N-[(trichlorogermyl)methyl]phthalimide
B
germaniumtetrachloride
C
benzene-1,2-dicarboxylic acid
Conditions | Yield |
---|---|
With hydrogenchloride In hydrogenchloride refluxed for 7 h; ppt. separated and dried, GeCl4 distd. off, residue shaken with CHCl3, phthalic acid filtered off; | A 0% B n/a C 35% |
chloro-trimethyl-silane
dimethyldiphenylgermane
A
germaniumtetrachloride
B
methylphenylgermanium dichloride
Conditions | Yield |
---|---|
aluminium trichloride In solid Si-compound reacted with (CH3)2Ge(C6H5)2 at 110-120°C for 3 h in presence of AlCl3; | A 9.4% B 29.7% |
chloro-trimethyl-silane
dimethyldiphenylgermane
A
germaniumtetrachloride
B
phenyldimethylchlorogermane
C
methylphenylgermanium dichloride
Conditions | Yield |
---|---|
aluminium trichloride In solid Si-compound reacted with (CH3)2Ge(C6H5)2 at 110-120°C for 3 h in presence of AlCl3; | A 11.2% B 3.5% C 22.8% |
aluminium trichloride In solid Si-compound reacted with (CH3)2Ge(C6H5)2 at 110-120°C for 3 h in presence of AlCl3; | A 8.4% B 4.6% C 16.4% |
tetrachlorosilane
dimethyldiphenylgermane
A
germaniumtetrachloride
B
phenyldimethylchlorogermane
C
methylphenylgermanium dichloride
D
trichlorophenylgermane
Conditions | Yield |
---|---|
aluminium trichloride In solid Si-compound reacted with (CH3)2Ge(C6H5)2 at 110-120°C for 3 h in presence of AlCl3; | A 21.6% B 0.4% C 2.2% D 11% |
germanium
chloroform
A
germaniumtetrachloride
B
Dichlormethyltrichlorgerman
Conditions | Yield |
---|---|
reaction of germanium atoms with organic halide by co-condensation under vac. at 77 K; GC-MASS; | A 15% B 8% |
In gas vaporization of Ge (alumina-coated tungsten crucible, 1200-1300°C, 5E-3 Torr), introduction into reaction flask (cooled with liq. N2 during Ge vaporization) together with vapor of org. halide, warming to room temp., standing for 1.5 h; GC-MS, GLC; | A 15% B 8% |
trichlorophenylgermane
isoprene
A
germaniumtetrachloride
C
3-methyl-3-buten-2-yl germanium trichloride
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: benzene, chlorobenzene; passing through tubular quartz reactor (630°C, contact time 30 s); products condensing; | A n/a B 13% C 5.9% |
tetrachlorosilane
dimethyldiphenylgermane
A
germaniumtetrachloride
B
methylphenylgermanium dichloride
Conditions | Yield |
---|---|
aluminium trichloride In solid Si-compound reacted with (CH3)2Ge(C6H5)2 at 110-120°C for 3 h in presence of AlCl3; | A 4.1% B 10.8% |
tetrachlorosilane
dimethyldiphenylgermane
A
germaniumtetrachloride
B
phenyldimethylchlorogermane
C
methylphenylgermanium dichloride
Conditions | Yield |
---|---|
aluminium trichloride In solid Si-compound reacted with (CH3)2Ge(C6H5)2 at 110-120°C for 3 h in presence of AlCl3; | A 9.4% B 1.1% C 3% |
Methyltrichlorosilane
dimethyldiphenylgermane
A
germaniumtetrachloride
B
phenyldimethylchlorogermane
Conditions | Yield |
---|---|
aluminium trichloride In solid Si-compound reacted with (CH3)2Ge(C6H5)2 at 110-120°C for 3 h in presence of AlCl3; | A 1.1% B 7.4% |
Conditions | Yield |
---|---|
In tetrahydrofuran addn. of 10-fold excess of S2Cl2 to Ge-atom/THF slurry (Ar atmosphere), stirring (50°C, 5 h); GC-MS, GLC; | 6% |
germanium
Bromotrichloromethane
A
germanium tetrabromide
B
trichlorobromogermane
C
chlorotribromogermane
D
germaniumtetrachloride
Conditions | Yield |
---|---|
In gas vaporization of Ge (alumina-coated tungsten crucible, 1200-1300°C, 5E-3 Torr), introduction into flask (cooled with liq. N2 during Ge vaporization) together with vapor of org. halide, warming to room temp., standing for 1.5 h; further products; GC-MS, GLC; | A 0.7% B 0.6% C 0.6% D 5.8% |
germanium
Bromotrichloromethane
A
germanium tetrabromide
B
trichlorobromogermane
C
chlorotribromogermane
D
CCl3GeBrCl2
E
germaniumtetrachloride
Conditions | Yield |
---|---|
reaction of germanium atoms with organic halide by co-condensation under vac. at 77 K; further products; GC-MASS; | A 0.7% B 1.1% C 0.6% D 0.6% E 5.8% |
germanium
Bromotrichloromethane
A
CCl3GeBr3
B
germaniumtetrachloride
Conditions | Yield |
---|---|
In tetrahydrofuran addn. of 10-fold excess of BrCCl3 to Ge-atom/THF slurry (Ar atmosphere), stirring (50°C, 20 h); GC-MS, GLC; | A 3.5% B 1% |
In tetrahydrofuran addn. of 10-fold excess of BrCCl3 to Ge-atom/THF slurry (Ar atmosphere), stirring (50°C, 5 h); GC-MS, GLC; | A 2.5% B 1% |
In hexane addn. of 10-fold excess of BrCCl3 to Ge-atom/THF slurry (Ar atmosphere), stirring (50°C, 20 h); GC-MS, GLC; | A 1.5% B <1.0 |
In 1,2-dimethoxyethane addn. of 10-fold excess of BrCCl3 to Ge-atom/THF slurry (Ar atmosphere), stirring (50°C, 5 h); GC-MS, GLC; | A 1.5% B <1.0 |
In hexane addn. of 10-fold excess of BrCCl3 to Ge-atom/THF slurry (Ar atmosphere), stirring (50°C, 5 h); GC-MS, GLC; | A 1% B <1.0 |
Conditions | Yield |
---|---|
In tetrahydrofuran addn. of 10-fold excess of PCl3 to Ge-atom/THF slurry (Ar atmosphere), stirring (50°C, 5 h); GC-MS, GLC; | 2% |
germanium
dichloromethane
A
germaniumtetrachloride
B
trichloro(chloromethyl)germane
Conditions | Yield |
---|---|
In gas vaporization of Ge (alumina-coated tungsten crucible, 1200-1300°C, 5E-3 Torr), introduction into reaction flask (cooled with liq. N2 during Ge vaporization) together with vapor of org. halide, warming to room temp., standing for 1.5 h; GC-MS, GLC; | A 1.6% B 0.3% |
reaction of germanium atoms with organic halide by co-condensation under vac. at 77 K; GC-MASS; | A 1.6% B 0.3% |
tetramethylsilane
germaniumtetrachloride
A
chloro-trimethyl-silane
B
chlorotrimethylgermane
C
tetramethylgermane
Conditions | Yield |
---|---|
aluminium bromide In neat (no solvent) molar ratio Me4Si/GeCl4 = 2/1, at 180°C for 2.75 h, cooled; NMR, mass spectra, chromy.; | A 100% B 18% C 82% |
aluminium bromide In neat (no solvent) molar ratio Me4Si/GeCl4 = 2/1, at 180°C for 4.5 h, cooled; NMR, mass spectra, chromy.; | A 100% B 23% C 77% |
aluminium bromide In neat (no solvent) molar ratio Me4Si/GeCl4 = 2/1, at 200°C for 3.5 h, cooled; NMR, mass spectra, chromy.; | A 100% B 13% C 87% |
tetramethylsilane
germaniumtetrachloride
A
chloro-trimethyl-silane
B
chlorotrimethylgermane
C
dimethylsilicon dichloride
Conditions | Yield |
---|---|
aluminium bromide In neat (no solvent) molar ratio Me4Si/GeCl4 = 2/1, at 200°C for 15 h, cooled; NMR, mass spectra, chromy.; | A 50% B 100% C 50% |
tetramethylsilane
germaniumtetrachloride
A
methyltrichlorogermane
B
dimethylsilicon dichloride
C
dichlorodimethylgermanium
Conditions | Yield |
---|---|
aluminium bromide In neat (no solvent) molar ratio Me4Si/GeCl4 = 0.5/1, at 200°C for 28 h, cooled; NMR, mass spectra, chromy.; | A 64% B 100% C 36% |
tetramethylsilane
germaniumtetrachloride
A
chlorotrimethylgermane
B
dimethylsilicon dichloride
C
dichlorodimethylgermanium
Conditions | Yield |
---|---|
aluminium bromide In neat (no solvent) molar ratio Me4Si/GeCl4 = 1/1, at 200°C for 56 h, cooled; NMR, mass spectra, chromy.; | A 14% B 100% C 86% |
Conditions | Yield |
---|---|
With triethylamine | 100% |
Conditions | Yield |
---|---|
at 250℃; for 24h; | 100% |
Conditions | Yield |
---|---|
at 250℃; for 24h; | 100% |
germaniumtetrachloride
acrylonitrile
3-(trichlorogermyl)-propionitrile
Conditions | Yield |
---|---|
Stage #1: germaniumtetrachloride With 1,1,3,3-Tetramethyldisiloxane In diethyl ether for 1.5h; Reflux; Schlenk technique; Glovebox; Stage #2: acrylonitrile In diethyl ether for 20h; Schlenk technique; Glovebox; | 100% |
germaniumtetrachloride
dimethyl sulfoxide
Conditions | Yield |
---|---|
In dichloromethane GeCl4 added dropwise with stirring to DMSO in CH2Cl2; ppt. filtered off, dried in vacuo; elem. anal.; | 99% |
1,1,3,3-Tetramethyldisiloxane
germaniumtetrachloride
methacrylic acid methyl ester
methyl-β-trichlorogermyl-isobutyrate
Conditions | Yield |
---|---|
a mixt. of methyl methacrylate, 1,1,3,3-tetramethyldisiloxane and GeCl4 with an addition of Cl3GeH ether complex is kept at 20°C for about 5 d;; the product is isolated after cooling the mixt. to -20°C. By distn. of the mother soln. in a vacuum further product is obtained;; | 99% |
2-methylenesuccinic acid
germaniumtetrachloride
diethyl [(trichlorogermyl)methyl]succinate
Conditions | Yield |
---|---|
With thionyl chloride; ethanol; hypophosphorous acid In ethanol mixt. of GeCl4 and H3PO2 (from NaH2PO2*7H2O and concd. HCl), boiled (14h, N2); addn. of itaconic acid at 0°C, extn. (room temp., CH2Cl2), ext. evapd. , residue dried (azeotropic method), iolated polymer boiled with SOCl2 (1 h), distn. with EtOH; excess SOCl2 distd. with ethanol (1 h); vac. distn.; elem. anal.; | 99% |
tetraphosphanylsilane
germaniumtetrachloride
A
tetraphosphanylgermane
D
chlorotriphosphanylsilane
Conditions | Yield |
---|---|
In tetrahydrofuran byproducts: PH3, HCl; 1:1 molar ratio, condensing at -196 °C, subsequently warming to room temp., 1 month, under Ar; a solid by-product was also formed, the product was dismutated into Cl2Si(PH2)2 and Cl3Si(PH2); | A 0% B 0% C 0% D 99% E 0% |
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: Et3SnCl; stirring (1 h); distn.; | 99% |
hexachlorodisilane
germaniumtetrachloride
tetraphenyl phosphonium chloride
Conditions | Yield |
---|---|
In dichloromethane at 20℃; for 12h; | 99% |
In dichloromethane at 20℃; for 12h; |
1,1,3,3-Tetramethyldisiloxane
10-undecenoic acid
germaniumtetrachloride
9-trichlorogermylundecanoic acid
Conditions | Yield |
---|---|
In neat (no solvent) mixt. kept 7 days at 20°C; pptn., liquid layer sepd. by decantation, crystals recrystn. (hexane); | 98% |
1,9-bis(3,5-di-tert-butyl-2-hydroxyphenyl)-5-phenyldipyrrin
germaniumtetrachloride
Conditions | Yield |
---|---|
With NaH In tetrahydrofuran 1,9-bis(2-hydroxyphenyl)dipyrrin deriv. treated with NaH in THF, treatment with GeCl4; | 98% |
Conditions | Yield |
---|---|
pH=9; | 97.2% |
Conditions | Yield |
---|---|
at 40℃; for 3h; | A n/a B 97% |
(E)-but-2-enoic acid
1,1,3,3-Tetramethyldisiloxane
germaniumtetrachloride
3-(trichlorogermyl)butanoic acid
Conditions | Yield |
---|---|
In neat (no solvent) mixt. kept 12 days at 20°C (acid completely dissolved after 1 day, pptn. begins after 3 days); pptn., liquid layer sepd. by decantation, crystals recrystn. (hexane); | 97% |
1,3-bis-{3-(triethylgermyl)propyl}-5-(trimethylsilyl)-s-triazine-1,3,5(2H,4H,6H)-trione
germaniumtetrachloride
ClGe(C3(O)3N3((CH2)3Ge(C2H5)3)2)3
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: (CH3)3SiCl; mixt. of starting materials (molar ratio (3 (Si-compound):1 (GeCl4)) heated (2.5 h, at 80°C under Ar, 1 h at 150°C, 3 mm); elem. anal.; | 97% |
4-Ethylpyridine
germaniumtetrachloride
bis(4-ethylpyridine)tetrachlorogermane
Conditions | Yield |
---|---|
In toluene (N2); GeCl4 was reacted with 4-ethylpyridine in toluene with stirring at 20°C; volatiles removed (vac.); elem. anal.; | 97% |
Conditions | Yield |
---|---|
Stage #1: C35H36N2O2 With sodium hydride In tetrahydrofuran at 20℃; for 1.5h; Glovebox; Inert atmosphere; Stage #2: germaniumtetrachloride In tetrahydrofuran at 0 - 20℃; for 15h; Glovebox; Inert atmosphere; | 97% |
germaniumtetrachloride
C6H4C(C3H7)C(C3H7)GeCl2
Conditions | Yield |
---|---|
In tetrahydrofuran byproducts: Cp2ZrCl2; under Ar; GeCl4 was added slowly to the Zr-compound at room temperature; stirring was maintained for 24 h; solvent was pumped away; residue was washed with pentane; extraction; solvent was removed; elem. anal.; | 96% |
Conditions | Yield |
---|---|
Stage #1: C37H40N2O4 With sodium hydride In tetrahydrofuran at 20℃; for 1.5h; Glovebox; Inert atmosphere; Stage #2: germaniumtetrachloride In tetrahydrofuran at 0 - 20℃; for 15h; Glovebox; Inert atmosphere; | 96% |
Conditions | Yield |
---|---|
aluminium trichloride other Radiation; a mixt. of GeCl4 and tetraalkylgermane in presence of AlCl3 as catalystin a Pyrex tube is irradiated with a light stream of argon for 3 min atatmospheric pressure (microwave irradiation: 300 W) (Ar); identification by (1)H-NMR, gas chromy.; | 95% |
Conditions | Yield |
---|---|
In tetrahydrofuran byproducts: Cp2ZrCl2; under Ar; GeCl4 was added slowly to the Zr-compound at room temperature; stirring was maintained for 24 h; solvent was pumped away; residue was washed with pentane; extraction; solvent was removed; elem. anal.; | 95% |
germaniumtetrachloride
1,3-diallyl-4-(trimethylsilyloxy)-2,6-dioxo-1,3,5-triazine
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: Me3SiCl; mixt. heating (30-40 min, 120-160°C, distilling flask); exposition to vac. 1.33 hPa; elem. anal.; | 95% |
triethanolamine
germaniumtetrachloride
phenylacetylene
1-(phenylethynyl)germatrane
Conditions | Yield |
---|---|
With Et3N; EtOH In ethanol; toluene (N2); standard Schlenk technique; flask with mixt. of C6H5CCH, GeCl4, Et3N in toluene was sealed, cooled, evacuated; heated at 110°C for 21 h; filtered; residue washed (toluene); EtOH and Et3N were added to filtrate and washings; mixt. stirred at; room temp. for 50 min; filtered; residue washed (toluene); filtrate and washings were added to (HOCH2CH2)3N; mixt. was stirred at 110°C for 6 h; cooled to room temp.; filtered; washed (pentane; CH2Cl2); solvent removed (vac.); | 95% |
N,N-dimethylhydroxylamine
germaniumtetrachloride
Conditions | Yield |
---|---|
With n-butyl lithium In diethyl ether; hexane byproducts: LiCl; N,N-dimethylhydroxylamine dissolved in hexane; cooled to 0°C; soln. of n-BuLi in Et2O added dropwise; stirred for 1 h; GeCl4 added at 0°C; stirred for 0.5 h; refluxed for 1 h; cooled to 0°C; filtered; filtrate concd. in vac.; recrystd. from hexane; elem. anal.; | 95% |
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