Gallium trichloride supplier | CasNO.13450-90-3

Name
GALLIUM(III) CHLORIDE
EINECS 236-610-0
CAS No. 13450-90-3
Article Data60
CAS DataBase
Density 2.47 g/mL at 25 °C(lit.)
Solubility Soluble in water
Melting Point 78 °C(lit.)
Formula GaCl₃
Boiling Point 35 °C
Molecular Weight 176.082
Flash Point -26 °F
Transport Information UN 3260
Appearance white crystals or powder
Safety 26-27-28-36/37/39-45
Risk Codes 14-34
Molecular Structure
Hazard Symbols C
Synonyms Gallium(III) chloride;Gallium chloride;Gallium trichloride;NSC 94002;Trichlorogallium;Gallium(3+) chloride;
PSA 0.00000
LogP 1.68770

Synthetic route

: 7440-55-3
gallium

: 7782-50-5
chlorine

: 13450-90-3
Gallium trichloride

Conditions

Conditions	Yield
In melt 5 mol% excess of gaseous chlorine passed through metal gallium melt;	99%
excess Cl2;;
mixt. heating (two-section glass tube, 200-250°C); vac. sublimation (water pump, ca. 250°C);

: 13886-65-2
gallium hydrogen dichloride

: 98127-35-6
1,2,4,5-tetrakis((trimethylsilyl)ethynyl)benzene

A: 950696-91-0
C6H2((CHC(Si(CH3)3))2GaCl(O(C2H5)2))2

B: 13450-90-3
Gallium trichloride

Conditions

Conditions	Yield
In hexane under Ar; soln. of HGaCl2 in n-hexane treated with soln. of (Me3SiC2)4C6H2 in n-hexane at room temp.; heated under reflux for 14 h; filtered; ppt. washed with n-hexane; treated with Et2O; filtered; filtrate concd.; cooled to -45°C; elem. anal.;	A 46% B n/a

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: gallium(III) oxide

: ammonium chloride

: 13450-90-3
Gallium trichloride

Conditions

Conditions	Yield
In neat (no solvent) heating up to 250 °C;;
In neat (no solvent) heating up to 250 °C;;

: gallium(III) oxide

: 7719-09-7
thionyl chloride

: 13450-90-3
Gallium trichloride

Conditions

Conditions	Yield
In neat (no solvent) 200°C;;
In neat (no solvent) 200°C;;

: gallium(III) oxide

: 10026-04-7, 53609-55-5
tetrachlorosilane

A: 13450-90-3
Gallium trichloride

B: 112926-00-8, 7631-86-9
silica gel

Conditions

Conditions	Yield
300-350°C in vac.; Two-fold vacuum sublimation with prior distilling off SiCl4.;

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: 7440-55-3
gallium

: 7783-90-6
silver(I) chloride

: 13450-90-3
Gallium trichloride

Conditions

Conditions	Yield
In neat (no solvent, solid phase) byproducts: Ag; oven (cf. Grabandt, de Lange, Mooyman, Chem. Phys. Lett. 160 (1989) 359) filled with a mixt. of gallium metal and AgCl, oven temp. between 700 to 900°C, inner ionization chamber kept at low temp.; not isolated, detected by photoelectron spectra;

: gallium arsenide

A: 13450-90-3
Gallium trichloride

B: 7784-34-1
arsenic trichloride

Conditions

Conditions	Yield
With Cl2 Kinetics; GaAs wafer, 25-150°C, pressure from 0.09 to 20 Torr of Cl2;

: 1445-79-0
trimethyl gallium

A: 13450-90-3
Gallium trichloride

B: 6917-81-3
dimethylchlorogallane

C: 6917-74-4
methylgallium dichloride

Conditions

Conditions	Yield
With HCl In neat (no solvent, gas phase)
With HCl In diethyl ether

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: 7440-55-3
gallium

: 13450-90-3
Gallium trichloride

Conditions

Conditions	Yield
With chlorine In neat (no solvent) Ar atmosphere; chlorination by 120°C; distn. (flow of chloridine), resublimation (flow of Ar);
With Cl2 200-250°C;
With Cl2 chlorination; sublimation;

: 7647-01-0
hydrogenchloride

: 7440-55-3
gallium

: 13450-90-3
Gallium trichloride

Conditions

Conditions	Yield
gentle heating;;
In neat (no solvent) Ga metal was dissolved in concd. HCl;

: 7647-01-0
hydrogenchloride

: 7440-55-3
gallium

A: 1333-74-0
hydrogen

B: 13450-90-3
Gallium trichloride

Conditions

Conditions	Yield
In neat (no solvent) heating of Ga in a stream of dry HCl at 200 - 400 °C;; distillation at 200 - 400 °C;;
In neat (no solvent) heating of Ga in a stream of dry HCl at 200 - 400 °C;; distillation at 200 - 400 °C;;
In neat (no solvent) moderate heating of Ga in a stream of dry HCl;; excess of HCl is removed by distillation in CO2 stream (traces of brown-yellow residue are formed);;

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: 7440-55-3
gallium

: 7782-50-5
chlorine

A: gallium(III) chloride

B: 13450-90-3
Gallium trichloride

C: gallium(II) chloride

Conditions

Conditions	Yield
In gaseous matrix co-deposition of Ga (heated from molybdenum or graphite cell to 1150 °C) and a Cl2/Ar mixt. (1:100 - 1:200) on to a polished Cu surface at 14-17 K;; IR;

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: gallium(III) chloride

: 13450-90-3
Gallium trichloride

Conditions

Conditions	Yield
In neat (no solvent) dissociation observable above 273 °C;; vapor density measurements;;
In neat (no solvent) complete dissociation above 440 °C;; vapor density measurements;;	> 99
In gaseous matrix heating in Ar-flow (5-10 mmol/h, up to 900 K); condensing at 12 K; vibration spectroscopy;

: 127735-01-7
GaCl3*PCl5

A: 13450-90-3
Gallium trichloride

B: 7782-50-5
chlorine

C phosphorus trichloride: phosphorus trichloride

Conditions

Conditions	Yield
complex dissociation in temp. range 100-500°C; tensimetric equilibrium monitoring;

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: 7440-55-3
gallium

: 7783-90-6
silver(I) chloride

A: 17108-85-9
gallium chloride

B: 13450-90-3
Gallium trichloride

Conditions

Conditions	Yield
In neat (no solvent, solid phase) byproducts: Ag; oven (cf. Grabandt, de Lange, Mooyman, Chem. Phys. Lett. 160 (1989) 359) filled with a mixt. of gallium metal and AgF, comparatively high temps.; not isolated, detected by photoelectron spectra;

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A gallium(III) oxide: gallium(III) oxide

B: 13450-90-3
Gallium trichloride

: gallium(III) oxide

: 75-71-8
Dichlorodifluoromethane

: 13450-90-3
Gallium trichloride

Conditions

Conditions	Yield
In neat (no solvent)

: cadmium(II) selenide

: GaSeCl

A: Cd2GaSe3Cl

B: 13450-90-3
Gallium trichloride

Conditions

Conditions	Yield
In neat (no solvent, solid phase) mixt. of the starting materials heated in evacuated sealed quartz tubes to 500-900°C; decompn. of educts ocurrs, GaCl3 sublimates off;	A 0% B n/a

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: zinc(II) selenide

: GaSeCl

A: Zn2GaSe3Cl

B: 13450-90-3
Gallium trichloride

Conditions

Conditions	Yield
In neat (no solvent) mixt. of the starting materials heated in evacuated sealed quartz tubes to 500-900°C; decompn. of educts ocurrs, GaCl3 sublimates off;	A 0% B n/a

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: zinc telluride

: GaTeCl

A: Zn2GaTe3Cl

B: 13450-90-3
Gallium trichloride

Conditions

Conditions	Yield
In neat (no solvent) mixt. of the starting materials heated in evacuated sealed quartz tubes to 500-900°C; decompn. of educts ocurrs, GaCl3 sublimates off;	A 0% B n/a

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: 24597-12-4
gallium(I) tetrachlorogallate(III)

A: 7440-55-3
gallium

B: 13450-90-3
Gallium trichloride

Conditions

Conditions	Yield
With water In water Kinetics; calorimetric monitoring;

: gallium(II) chloride

A: 7440-55-3
gallium

B: 13450-90-3
Gallium trichloride

Conditions

Conditions	Yield
In neat (no solvent) decompn. during sublimation;;
In neat (no solvent) decompn. during sublimation;;

: gallium(II) chloride

A: gallium(III) chloride

B: gallium(III) chloride

C: GaGaCl4

D: 13450-90-3
Gallium trichloride

Conditions

Conditions	Yield
In neat (no solvent, gas phase) heating to 445 K; identification by mass spectroscopy and electron diffraction;

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: gallium(III) oxide

: 13450-90-3
Gallium trichloride

Conditions

Conditions	Yield
With chlorine Kinetics; byproducts: O2; 400-850°C; reaction products identified by X-ray diffraction and chem. anal.;

: gallium(III) oxide

: 7782-50-5
chlorine

A: 7446-11-9
sulfur trioxide

B: 13450-90-3
Gallium trichloride

Conditions

Conditions	Yield
With sulfur dioxide In neat (no solvent) Kinetics; byproducts: O2; temps. above 500°C; reaction products identified by X-ray diffraction and chem. anal.;

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: gallium(III) oxide

: 7782-50-5
chlorine

: 13450-90-3
Gallium trichloride

Conditions

Conditions	Yield
In neat (no solvent) Kinetics; byproducts: O2; 400-850°C; reaction products identified by X-ray diffraction and chem. anal.;

: 13572-93-5
gallane

: 13450-90-3
Gallium trichloride

Conditions

Conditions	Yield
With hydrogenchloride byproducts: H2; at -95°C, excess of anhydrous HCl;	>99

: 7783-06-4
hydrogen sulfide

: 13450-90-3
Gallium trichloride

: 98773-19-4
gallium trichloride*hydrogen sulfide

Conditions

Conditions	Yield
In dichloromethane under N2, H2S introduced in soln. of GaCl3 in CH2Cl2 at -78°C for 15 min, further stirred for 1h at -78°C; evapn. of solvent at -20°C, dried in vac. for 3h at -20°C, elem. anal.;	100%

: 13450-90-3
Gallium trichloride

: 75-08-1
ethanethiol

: 98773-05-8, 115958-66-2
trichlorogallium * ethanethiol

Conditions

Conditions	Yield
In benzene slow addn. of ethanethiol to a suspn. of an equimolar amt. of GaCl3 in benzene; mixt. stirred for 1 h at room temp.; solvent distd. off in vac. at 60°C; elem. anal.;	100%
In benzene under N2, dropwise addn. of thiol soln. to a suspension of GaCl3 in benzene, dissoln.of GaCl3, stirred for 15 min at room temp.; evapn. of solvent, dried in vac. at room temp. for 3h, elem. anal.;	100%

: 107-03-9
1-thiopropane

: 13450-90-3
Gallium trichloride

: 98773-06-9
(gallium trichloride)propanethiol

Conditions

Conditions	Yield
In benzene under N2, dropwise addn. of thiol soln. to a suspension of GaCl3 in benzene, dissoln. of GaCl3, stirred for 15 min at room temp.; evapn. of solvent, dried in vac. at room temp. for 3h, elem. anal.;	100%

: 13450-90-3
Gallium trichloride

: 75-33-2
2-propanethiol

: 98773-07-0
gallium trichloride*2-propanethiol

Conditions

Conditions	Yield
In benzene under N2, dropwise addn. of thiol soln. to a suspension of GaCl3 in benzene, dissoln.of GaCl3, stirred for 15 min at room temp.; evapn. of solvent, dried in vac. at room temp. for 3h, elem. anal.;	100%

: 6389-79-3
methyl methylphenylphosphinate

: 13450-90-3
Gallium trichloride

: poly(gallium methylphenylphosphinate)

Conditions

Conditions	Yield
In further solvent(s) byproducts: MeCl; slow heating in neat Ph(Me)P(O)OMe until complete pptn.; particle size and polymerization degree depending on heating rate;	100%

: 7677-24-9
trimethylsilyl cyanide

: 13450-90-3
Gallium trichloride

: gallium monocyanide

Conditions

Conditions	Yield
In neat (no solvent) byproducts: Me3SiCl; (inert atm.); stirring (room temp. 6 h, 60°C 60 h, 75°C 4 h); byprod. and educt excess removal (vac.), washing (hexane), drying (vac.);	100%

: D-1,2-(1-benzyloxy-2-oxopyridine-6-carboximide)bactin

: 13450-90-3
Gallium trichloride

: D-1,2-(1-hydroxy-2-oxopyridine-6-carboximide)bactin Ga(III)

Conditions

Conditions	Yield
In not given mixting GaCl3 and benzyl protected D-1,2-hopobactin; after reaction was complete, pH was adjusted to 8; chromy.;	99%

: L-1,2-(1-benzyloxy-2-oxopyridine-6-carboximide)bactin

: 13450-90-3
Gallium trichloride

: L-1,2-(1-hydroxy-2-oxopyridine-6-carboximide)bactin Ga(III)

Conditions

Conditions	Yield
In not given mixting GaCl3 and benzyl protected L-1,2-hopobactin; after reaction was complete, pH was adjusted to 8; chromy.;	99%

: 18797-34-7
tribenzylgallium

: 13450-90-3
Gallium trichloride

: 304854-91-9
C6H5CH2GaCl2

Conditions

Conditions	Yield
In toluene uner Ar; stoich. amts. of compounds stirred at 20°C for 48 h in toluene; solvent evapd. in vac.;	99%

: 7677-24-9
trimethylsilyl cyanide

: 13450-90-3
Gallium trichloride

: 10025-82-8
indium(III) chloride

: 0.5In(3+)*0.5Ga(3+)*3CN(1-)=In0.5Ga0.5(CN)3

Conditions

Conditions	Yield
In diethyl ether; hexane byproducts: Me3SiCl; N2-atmosphere; dropwise addn. of stoic. mixt. of metal salts (in ether) to Me3SiCN (in hexane), stirring for 12 h; collection (filtration), heating in hexane (several h), washing (hexane);	99%

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: 242488-86-4
Al(3+)*C33H48N2O2(2-)*Cl(1-)=Al(C33H48N2O2)Cl

: 13450-90-3
Gallium trichloride

: [Al(C33H48N2O2)]2(2+)*2GaCl4(1-)=[Al(C33H48N2O2)]2[GaCl4]2

Conditions

Conditions	Yield
In dichloromethane stirring (25°C, 6 h); solvent removal (vac.), hexanes addn., cooling (-30°C, 1 d, crystn.), filtration, drying (vac.); elem. anal.;	99%

: 13450-90-3
Gallium trichloride

: 2001-45-8
tetraphenyl phosphonium chloride

: 199620-14-9, 13007-92-6
chromium(0) hexacarbonyl

bis(triphenylphosphoranylidene)ammonium bis[(dichlorogallio)pentacarbonylchromate]: bis(triphenylphosphoranylidene)ammonium bis[(dichlorogallio)pentacarbonylchromate]

Conditions

Conditions	Yield
With C8K In tetrahydrofuran byproducts: KCl, graphite; inert atmosphere; treatment of Cr(CO)6 with C8K, addn. of 1 equiv. GaCl3at -78°C (stirring), warming to room temp., standing for 3.5 h, addn. of slight excess PPNCl, standing for 1 h; filtration, washing of residue (THF), solvent removal (vac.), washing (Et2O); elem. anal.;	99%

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: 64-17-5
ethanol

: 13450-90-3
Gallium trichloride

: 1116690-06-2
(μ5-oxo)pentachloroocta(μ-ethoxide)pentagallium

Conditions

Conditions	Yield
With sodium In ethanol byproducts: HCl, NaCl; N2, Na dissolved at room temp., GaCl3 added, refluxed for 5-6 h, left overnight; ppt. removed, solvents evapd. to drynss (vac.), suspd. (toluene), ppt. treated with CH3CN/toluene, soln. stored for 5 mn; elem. anal.;	99%

: 13450-90-3
Gallium trichloride

Conditions

Conditions	Yield
In neat (no solvent, solid phase) (Ar); solid state reaction; equimolar mixt. of TlCl, and GaCl3 sealed under vac. in glass ampoules; heated with 10°C/h to 150°C for 48 h; cooled to 25°C with 2.degre.C/h; detn. by XRD;	99%

: [bis(4-allyl-3-thiosemicarbazonato)acenaphthenequinone]zinc(II)

: 13450-90-3
Gallium trichloride

: [gallium(III) chloride bis(4-allyl-3-thiosemicarbazonate)acenaphthenequinone]*3(methanol)

Conditions

Conditions	Yield
In methanol addn. of Zn compd. in MeOH to GaCl3, heating under reflux for 2 h or stirring overnight;	99%
In methanol addn. of Zn compd. in MeOH to GaCl3, heating under reflux for 6 h (or 2 h) or stirring overnight; isolation as mixture of symmetric and asymmetric isomers; cooling to room temp., filtration, washing with Et2O, drying under vacuum, elem. anal.;	54%

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: zinc bis(4-methyl-3-thiosemicarbazonate)acenaphthenequinone

: 13450-90-3
Gallium trichloride

: gallium(III) chloride bis(4-methyl-3-thiosemicarbazonate)acenaphthenequinone

Conditions

Conditions	Yield
In methanol addn. of Zn compd. in MeOH to GaCl3, heating under reflux for 2 h or stirring overnight;	99%
In methanol addn. of Zn compd. in MeOH to GaCl3, heating under reflux for 6 h; isolation as symmetric and asymmetric isomers (1.3:1); cooling to room temp., filtration, washing with Et2O, drying under vacuum, elem. anal.;	36%

: 140194-63-4
tris(di-tert-butyphosphino)gallane

: 13450-90-3
Gallium trichloride

: Ga(tBu2P)2Cl

Conditions

Conditions	Yield
In benzene under Ar and N2; at room temp.; elem. anal.;	99%

: 2K(1+)*Zr6B(13+)*15Cl(1-)=K2(Zr6B)Cl15

: 13450-90-3
Gallium trichloride

: 75-05-8
acetonitrile

: (Zr6B)Cl12(CH3CN)6(1+)*GaCl4(1-)*CH3CN=(Zr6B)Cl12(CH3CN)6(GaCl4)*CH3CN

Conditions

Conditions	Yield
In acetonitrile byproducts: KCl; CH3CN added to metal complex, sealed in a glass ampule, kept at 100°C for 3-4 d, filtered (Ar), treated with excess of GaCl3, sealed, heated at 100°C for 12 h; evapd. slowly;	99%

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: 13450-90-3
Gallium trichloride

: lithium hydride

lithium tetrahydridogallate: lithium tetrahydridogallate

Conditions

Conditions	Yield
In tetrahydrofuran byproducts: LiCl; slow addn. of GaCl3 to 64% excess of freshly ground LiH (during 4 h, 5-10°C), stirring for 2 h; filtration, evapn. of filtrate, dissoln. in ether, evapn., dissoln. in THF;	98%
In tetrahydrofuran byproducts: LiCl; slow addn. of GaCl3 to 25% excess of freshly ground LiH, stirring for 1-2 h (total reaction time 4.5 h; 5-10°C); evapn., dissoln. in ether;	96%
In diethyl ether byproducts: LiCl; slow addn. of GaCl3 to 73% excess of freshly ground LiH (over 1 h, 8-10°C), stirring for 1.5 h;	96%

: 13450-90-3
Gallium trichloride

lithium hydride: lithium hydride

: lithium tetrahydridogallate

Conditions

Conditions	Yield
In tetrahydrofuran byproducts: LiCl; Li-compd. grinding in solvent, excess suspn. treating with Ga-salt soln.(three-necked flask, 5-10°C, 4 h, stirring), further stirring fo r 2 h, soln. filtration, evapn. to paste, treatment with ether (LiCl removal); sol. evapn., ppt. dissoln. in THF;	98%
In diethyl ether byproducts: LiCl; Ga-salt soln. addn. to excess Li-compd. suspn. (three-necked flask, 8-10°C, 1 h, stirring), further stirring for 1.5 h, soln. filtration,evapn. to paste, treatment with ether (LiCl removal); Ga-complex isolation according to: L. I. Zakharkin, V. V. Gavrilenko, Yu. N. Karaksin, Zhur. Obshch. Khim. 41 (1973) 2689;	96%

: potassium dihydrobis(pyrazol-1-yl)borate

: 13450-90-3
Gallium trichloride

A: 18583-65-8
dihydro-bis(1-pyrazolyl)borate acid

B: 127916-05-6
(acetato)bis{dihydrobis(1-pyrazolyl)borato}gallium(III)

Conditions

Conditions	Yield
With NaO2CCH3 In tetrahydrofuran N2-atmosphere; mixing of borate and AcONa, addn. to GaCl3 soln. (-78°C), stirring and warming to room temp. during 8 h; evapn. (vac.), extn. (benzene), filtration, evapn. (vac.), recrystn. (benzene/hexane, 0°C); elem. anal.;	A n/a B 98%

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Gallium trichloride Consensus Reports

Reported in EPA TSCA Inventory. EPA Extremely Hazardous Substances List.

Gallium trichloride Specification

The Gallium trichloride with CAS registry number of 13450-90-3 is also known as Gallium trichloride. The IUPAC name and product name are the same. It belongs to product categories of Inorganics; Crystal Grade Inorganics; Catalysis and Inorganic Chemistry; Chemical Synthesis; Gallium Salts; GalliumMetal and Ceramic Science; Salts. Its EINECS registry number is 236-610-0. In addition, the formula is GaCl₃ and the molecular weight is 176.08. This chemical is a white crystals or powder and should be sealed in a ventilated, cool and dry place at room temperature. What's more, it is used as organic catalyst.

Physical properties about Gallium trichloride are:
(1)Exact Mass: 173.832139; (2)MonoIsotopic Mass: 173.832139; (3)Heavy Atom Count: 4; (4)Complexity: 8; (5)Covalently-Bonded Unit Count: 1;(6)#H bond acceptors: 0; (7)#H bond donors: 0; (8)#Freely Rotating Bonds: 0.

Preparation of Gallium trichloride:
It is prepared by reaction of gallium oxide with thionyl chloride. Firstly, the reaction mixture is heated to 200 °C until gallium oxide is chlorinated completely. Then the reaction mixture is cooled to -10 °C and distilled to remove the excess thionyl chloride. At last, product is refined by distillating at 220 °C.

Safety information of Gallium trichloride:
When you are using this chemical, please be cautious about it. As a chemical, it is extremely flammable and causes burns. It reacts violently with water and it is toxic to aquatic organisms that may cause long-term adverse effects in the aquatic environment. During using it, wear suitable protective clothing, gloves and eye/face protection. Keep away from sources of ignition and avoid release to the environment. After contact with skin, take off immediately all contaminated clothing, and wash immediately. In case of contact with eyes, rinse immediately with plenty of water and seek medical advice. If accident happens or you feel unwell seek medical advice immediately. What's more, do not empty into drains and take precautionary measures against static discharges.

You can still convert the following datas into molecular structure:
(1)SMILES:Cl[Ga](Cl)Cl;
(2)Std. InChI:InChI=1S/3ClH.Ga/h3*1H;/q;;;+3/p-3;
(3)Std. InChIKey:UPWPDUACHOATKO-UHFFFAOYSA-K;

The toxicity data of Gallium trichloride is as follows:

Organism	Test Type	Route	Reported Dose (Normalized Dose)	Source
dog	LD50	intravenous	41mg/kg (41mg/kg)	Environmental Quality and Safety, Supplement. Vol. 1, Pg. 1, 1975.
mouse	LD50	intraperitoneal	36975ug/kg (36.975mg/kg)	Comptes Rendus Hebdomadaires des Seances, Academie des Sciences. Vol. 256, Pg. 1043, 1963.
rabbit	LD50	intravenous	43mg/kg (43mg/kg)	Environmental Quality and Safety, Supplement. Vol. 1, Pg. 1, 1975.
rabbit	LD50	subcutaneous	245mg/kg (245mg/kg)	Environmental Quality and Safety, Supplement. Vol. 1, Pg. 1, 1975.
rat	LCLo	inhalation	316mg/m³/3H (316mg/m³)	Journal of Pharmacology and Experimental Therapeutics. Vol. 95, Pg. 487, 1949.
rat	LD50	intravenous	47mg/kg (47mg/kg)	Environmental Quality and Safety, Supplement. Vol. 1, Pg. 1, 1975.
rat	LD50	parenteral	1408mg/kg (1408mg/kg)	AJR, American Journal of Roentgenology. Vol. 142, Pg. 619, 1984.
rat	LD50	subcutaneous	306mg/kg (306mg/kg)	Environmental Quality and Safety, Supplement. Vol. 1, Pg. 1, 1975.

Product Name

GALLIUM(III) CHLORIDE

Synthetic route

Gallium trichloride Consensus Reports

Gallium trichloride Specification

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