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Gallium trichloride
A
gallium
B
gallium trichloride-pyridine (1/1)
Conditions | Yield |
---|---|
In toluene inert atmosphere; soln. of Si-compd. cooled to -80°C, addn. of GaCl3 (equiv. amt.) soln., warming to room temp., Gallium pptn. on standing (3-5 d), filtration of Ga, pptn. on pyridine addn. to filtrate; filtration; | A 98% B 87% |
gallium(III) bromide
A
gallium
Conditions | Yield |
---|---|
In toluene inert atmosphere; soln. of Si-compd. cooled to -80°C, addn. of GaBr3 (equiv. amt.) soln., warming to room temp., gallium pptn. on standing (3-5 d), filtration of Ga, pptn. on pyridine addn. to filtrate; filtration; | A 96% B 79% |
IMes*GaH3
A
gallium
B
GaHBr2(1,3-bis(2,4,6-trimethylphenyl)imidazol-2-ylidene)GaHBr2(1,3-bis(2,4,6-trimethylphenyl)imidazol-2-ylidene)
Conditions | Yield |
---|---|
In toluene (under Ar, Schlenk); soln. of Ga-complex added dropwise to soln. of Ga-complex in toluene with stirring at room temp., heated to 50°C for36 h; filtered, volatiles removed in vacuo; | A n/a B 71% |
ephedrine hydrochloride
A
gallium
Conditions | Yield |
---|---|
With ammonium hydroxide In methanol for 3h; pH=8 - 9; Reflux; | A n/a B 66% |
gallium
Conditions | Yield |
---|---|
With 2,3,5,6-tetramethyl-1,4-bis(trimethylsilyl)-1,4-diaza-2,5-cyclo-hexadiene In tetrahydrofuran at 20℃; for 15h; Inert atmosphere; | 59% |
Conditions | Yield |
---|---|
In benzene byproducts: LiCl; addn. of soln. of carborane to GaCl3 (C6H6, 0°C), stirring at room temp. overnight; filtration off of LiCl and Ga, concn.; elem. anal.; | A n/a B 51% |
[LiAs(SiMe3)2*DME]
A
gallium
B
bis(1,4-di-t-butyl-1,4-diazabuta-1,3-diene)gallium
Conditions | Yield |
---|---|
In diethyl ether under Ar atm. to soln. Ga complex in Et2O LiAs(SiMe3)2*DME in Et2O (1:2)was added at -78°C over 5 min, soln. was warmed to room temp. an d stirred overnight; volatiles were emoved in vacuo, residue was extd. with hexane, filtered,concd., and cooled to -30°C overnight; elem. anal.; | A n/a B n/a C 33% |
A
gallium
C
gallane
Conditions | Yield |
---|---|
With octane byproducts: H2; at -30°C in vac. (<1E-4 mm Hg); Gallane condenses as a white solid, elem. anal.; | A n/a B n/a C 5% |
With octane In solid byproducts: H2; at -30°C in vac. (<1E-4 mm Hg); Gallane condenses as a white solid, elem. anal.; | A n/a B n/a C 5% |
Conditions | Yield |
---|---|
In water byproducts: H(1+); Sonication; Ar atmosphere (1.5 atm); 100 W/cm**2, 20-kHz, room temp., 90 min - 6 h; washing (H2O, 4 times), drying (vac.); detd. by powder X-ray diffraction; | A 1% B n/a |
1,1,3,3-tetramethylgyanidine-gallane (1/1)
A
gallium
B
hydrogen
C
N,N,N',N'-tetramethylguanidine
Conditions | Yield |
---|---|
at 85 - 90℃; Thermodynamic data; |
gallium
Conditions | Yield |
---|---|
With filter paper coal In neat (no solvent) annealing; | |
With hydrogen In neat (no solvent) in H2-stream at red heat;; | |
With filter paper coal In neat (no solvent) annealing; | |
With H2 In neat (no solvent) in H2-stream at red heat;; |
diborane
trimethyl gallium
A
gallium
B
methyl diboranemethyl diborane
C
hydrogen
Conditions | Yield |
---|---|
at room temp. with excess of B2H6; | |
at room temp. with excess of B2H6; |
Conditions | Yield |
---|---|
In solid at 580-650°C; UPS; Auger spect.; |
gallium
Conditions | Yield |
---|---|
In neat (no solvent) heated at 585 - 750 °C for 3 - 8 min under vac.; |
Conditions | Yield |
---|---|
In gaseous matrix Kinetics; Irradiation (UV/VIS); photolysis at 403.3 nm; KrF laser; carrier gas H2, D2 or CH4; monitoring fluorescence at 417.2 nm; | |
In neat (no solvent) deposition of Ga droplets on heated Si substrate (480 °C) at moleflow of GaMe3 of 2.2E-5 mol/min for 30 s; | |
In neat (no solvent) thermal decompn. on heated Cu or GaAs surfaces; detn. by MPI/MS; |
trimethyl gallium
A
gallium
B
monomethyl gallium
C
dimethylgallium
Conditions | Yield |
---|---|
In gas byproducts: CH3, C2H6; Irradiation (UV/VIS); laser photolysis; | |
In gas byproducts: C2H6, CH3; Irradiation (UV/VIS); photolysis (190-310 nm); studied by laser mass spectrometry and UV absorption spectrometry; |
Conditions | Yield |
---|---|
0% |
Conditions | Yield |
---|---|
0% |
Conditions | Yield |
---|---|
In neat (no solvent) High Pressure; under Ar flow; Si wafer placed on Al plate; Ga droplets (obtained from GaN at 1150°C) transferred by Ar contg. O2 (7.8 Torr partial pressure) and deposited onto Si wafer; heated at 1150°C (400 Torr) for5 h; detd. by scanning and transmission electron microscopy, and energy dispersive X-ray spectroscopy; | A n/a B 0% C 0% |
Gallium trichloride
gallium
Conditions | Yield |
---|---|
With arsenic(III) trioxide In water Electrochem. Process; electrodeposition, pH 14 (silicon substrate, -2.99 V vs Ag/AgCl,lead substrate, -1.73 V vs Ag/AgCl ); X-ray diffraction, Auger electron spectroscopy; | |
With potassium hydroxide In potassium hydroxide Electrolysis; | |
With LiBH(CH2CH3)3 In tetrahydrofuran byproducts: LiCl; (Ar); addn. of dioctylether to THF soln. of Superhydride, stirring for 1.5 at 90°C in vac., addn. of gallium compd.; centrifugation, washing with THF, drying in vac. for 20 min; |
Conditions | Yield |
---|---|
In neat (no solvent) Ga, As evacuated, closed in an outgassed quartz ampoule at .apprx.1E-4 Pa, heated at 580.+-.20°C, 140h; | 100% |
With iodine In neat (no solvent) stoichiometric amts. of Ga and As heated at 1000°C for 5 days at the presence of a small amts. of iodine; identified by X-ray diffraction; | |
In gas gas phase reaction of Ga and As vapour at 1E-10 Torr; |
Conditions | Yield |
---|---|
In neat (no solvent) Ge, Ga and Sb placed in evacuated (1E-2 Pa), sealed quartz ampoules, annealed (800°C, 1400 h); single phase (microstructural analysis), samples prepared with total of 0.25 at.% dopant (Ge = 99.75 at.%) and others with total dopant content of 5 E19 cm-3, also Ge:Sb = 3:1, 1:1 and 1:3; | 100% |
Conditions | Yield |
---|---|
In neat (no solvent) stoich. mixt. sealed in Ta tubes under Ar; Ta tubes sealed in silica ampoules (1E-2 mbar); heated (900°C, 20 d); | 100% |
Conditions | Yield |
---|---|
In neat (no solvent) Ge and Ga placed in evacuated (1E-2 Pa), sealed quartz ampoules, annealed (800°C, 1400 h); single phase (microstructural analysis), dopant content of 5 E19 cm-3; | 100% |
Conditions | Yield |
---|---|
In neat (no solvent) Ga, Sb evacuated, closed in an outgassed quartz ampoule at .apprx.1E-4 Pa, heated at 580.+-.20°C, 140h; | 100% |
melting in a quartz crucible in flowing hydrogen (purified over Pd, flow rate 70 ml/min); for compensation of evapn. of Sb, 0.1% excess Sb was applied;; | |
In neat (no solvent) Sb/Ga flux ratio was approx. 8.5, GaAs(001) as substrate, mol. beam epitaxy; |
Conditions | Yield |
---|---|
In neat (no solvent) stoich. mixt. sealed in Ta tubes under Ar; Ta tubes sealed in silica ampoules (1E-2 mbar); heated (850°C, 20 d); | 100% |
Conditions | Yield |
---|---|
In neat (no solvent) stoich. mixt. sealed in Ta tubes under Ar; Ta tubes sealed in silica ampoules (1E-2 mbar); heated (950°C, 33 d); | 100% |
Conditions | Yield |
---|---|
In neat (no solvent, solid phase) all manipulations under Ar atm.; stoich. mixt. of compds. sealed in Ta tubes then tubes sealed inside silica ampoules under vac. (ca. 1E-2 mbar), heated at 930°C for 36 d; | 100% |
Conditions | Yield |
---|---|
With gallium(III) trichloride for 5h; Inert atmosphere; Reflux; | 100% |
Conditions | Yield |
---|---|
With gallium(III) trichloride for 2h; Inert atmosphere; Reflux; | 100% |
Conditions | Yield |
---|---|
In toluene at 30℃; Glovebox; Inert atmosphere; Sonication; | A n/a B 100% C n/a |
Conditions | Yield |
---|---|
In melt 5 mol% excess of gaseous chlorine passed through metal gallium melt; | 99% |
excess Cl2;; | |
mixt. heating (two-section glass tube, 200-250°C); vac. sublimation (water pump, ca. 250°C); |
Conditions | Yield |
---|---|
In melt mixing of Y, Ga and Ge in ratio Y:Ga:Ge as 1:15:1 under N2; slowly heating (60°C/h) up to 1000°C; holding at 1000°C for 5 h; cooling (75°C/h) to 850°C; holding isothermally for 6 days; cooling to 200°C; hot-temp. span-filtration; treatment with 3 M soln. of I2 in DMF for 12-24 h; rinsing with DMF, hot water, drying with acetone and ether; | 99% |
Conditions | Yield |
---|---|
In melt mixing of Yb, Ga and Ge in ratio Yb:Ga:Ge as 1:15:1 under N2; slowly heating (60°C/h) up to 1000°C; holding at 1000°C for 5h; cooling (75°C/h) to 850°C; holding isothermally for 6 days; cooling to 200°C; hot-temp. span-filtration; treatment with 3 M soln. of I2 in DMF for 12-24 h; rinsing with DMF, hot water, drying with acetone and ether; | 99% |
Conditions | Yield |
---|---|
In melt mixing of Sm, Ga and Ge in ratio Sm:Ga:Ge as 1:15:1 under N2; slowly heating (60°C/h) up to 1000°C; holding at 1000°C for 5h; cooling (75°C/h) to 850°C; holding isothermally for 6 days; cooling to 200°C; hot-temp. span-filtration; treatment with 3 M soln. of I2 in DMF for 12-24 h; rinsing with DMF, hot water, drying with acetone and ether; | 99% |
Conditions | Yield |
---|---|
In melt Ga mixed with 1 mol% Er in presence of wetting agent Bi in quartz tube placed in furnace, after purging with Ar for 1 h, heating under Ar flow at 950-1050 °C, gas switched from Ar to NH3, temp. held for 3-5 h; | 99% |
In gas Ga and Er were deposited on sapphire substrate at 700°C under ammonia flow; |
Conditions | Yield |
---|---|
In not given recrystn. (Et2O); | 99% |
Conditions | Yield |
---|---|
In nitromethane at 20℃; for 1.5h; Sonication; | 99% |
Conditions | Yield |
---|---|
Stage #1: gallium; water With hydrogenchloride; potassium oxalate; urea at 20℃; for 0.5h; Stage #2: at 179.84℃; for 3h; Reagent/catalyst; Autoclave; | 99% |
Conditions | Yield |
---|---|
Heating; | 99% |
In neat (no solvent) |
Conditions | Yield |
---|---|
In neat (no solvent) Al and Ga metals were heated in sealed quartz tube to 700° and then cooled to room temp.; | 98% |
In neat (no solvent) | |
In neat (no solvent) | |
In neat (no solvent) melting Ga and Al in a porcelain tube in vac.;; |
Conditions | Yield |
---|---|
In toluene N2 atmosphere; refluxing (24 h); removal of solvent; elem. anal.; | 98% |
Conditions | Yield |
---|---|
In toluene 1:3 mixt. refluxed in toluene for 18 h (until metal was completely dissolved); filtration, evapd. to dryness, elem. anal.; | 98% |
gallium
2,6-bis[1-[(2,6-di(iso-propyl)phenyl)imino]-benzyl]pyridine
iodine
toluene
Conditions | Yield |
---|---|
In toluene Sonication; (under N2); Ga and I2 added to soln. of ligand in toluene, sealed, sonicated for 3 h, stirred overnight; filtered, washed with hexane, dried under vac.; | 98% |
Conditions | Yield |
---|---|
With methylene chloride; sodium at 40 - 50℃; under 375.038 Torr; Inert atmosphere; Flow reactor; | A 93.7% B 96.8% |
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