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Dayang Chem (Hangzhou) Co.,Ltd.

As a leading manufacturer and supplier of chemicals in China, DayangChem not only supply popular chemicals, but also DayangChem's R&D center offer custom synthesis services. DayangChem can provide different quantities of custom synthesis ch

Gallium

Cas:7440-55-3

Min.Order:1 Kilogram

FOB Price: $3.0

Type:Lab/Research institutions

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Simagchem Corporation

Welcome to Simagchem, your partner in China as a premier supply of bulk specialty chemicals for industry and life science. We introduce experienced quality product and exceptional JIT service with instant market intelligence in China to benefit our

High quality Gallium supplier in China

Cas:7440-55-3

Min.Order:0 Metric Ton

Negotiable

Type:Manufacturers

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Ality Chemical Corporation

The above product is Ality Chemical's strong item with best price, good quality and fast supply. Ality Chemical has been focusing on the research and production of this field for over 14 years. At the same time, we are always committed to providi

Factory Supply Gallium

Cas:7440-55-3

Min.Order:1

Negotiable

Type:Other

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Chemwill Asia Co., Ltd.

Our main production base is located in Xuzhou industry park. We are certified both to the ISO 9001 and ISO 14001 Standards, have a safety management system in place.Our R&D team masters core technology for process-design of target building block

Gallium

Cas:7440-55-3

Min.Order:5 Kiloliter

FOB Price: $1.2 / 5.0

Type:Manufacturers

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Hebei yanxi chemical co.,LTD.

Chengdu words and import and export co., LTD is one specialized is engaged in pharmaceutical intermediates, fine chemical industry in the field of research. Development and production of high-tech enterprises.We can provide Ephedrine products to ne

GALLIUM

Cas:7440-55-3

Min.Order:0 Metric Ton

Negotiable

Type:Trading Company

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Henan Tianfu Chemical Co., Ltd.

GALLIUM Basic information Product Name: GALLIUM Synonyms: GALLIUM SINGLE ELEMENT PLASMA STANDARD;GALLIUM SINGLE ELEMENT STANDARD;GALLIUM STANDARD;GALLIUM PELLETS;GALLIUM METAL;GALLIUM PL

TIANFU-CHEM CAS:7440-55-3 GALLIUM

Cas:7440-55-3

Min.Order:1 Gram

Negotiable

Type:Lab/Research institutions

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Shanghai Minstar Chemical Co., Ltd

GALLIUM SINGLE ELEMENT PLASMA STANDARD;GALLIUM SINGLE ELEMENT STANDARD;GALLIUM STANDARD;GALLIUM PELLETS;GALLIUM METAL;GALLIUM PLASMA EMISSION SPECTROSCOPY STANDARD;GALLIUM PLASMA EMISSION STANDARD;GALLIUM, PLASMA STANDARD SOLUTION Gallium is a ch

Gallium 7440-55-3 Large in stock

Cas:7440-55-3

Min.Order:1 Kilogram

Negotiable

Type:Lab/Research institutions

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Henan Wentao Chemical Product Co., Ltd.

Henan Wentao Chemical Product Co.,Ltd is Located in Zhengzhou High-tech Development Zone with import and export license, We passed ISO 9001:2008 as well, Henan Wentao has developed more than 1000 compounds, which are widely used in the fields of prod

CAS NO.:7440-55-3

Cas:7440-55-3

Min.Order:0

Negotiable

Type:Lab/Research institutions

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Hangzhou J&H Chemical Co., Ltd.

J&H CHEM R&D center can offer custom synthesis according to the contract research and development services for the fine chemicals, pharmaceutical, biotechnique and some of the other chemicals. J&H CHEM has some Manufacturing base in Jia

GALLIUM

Cas:7440-55-3

Min.Order:0

Negotiable

Type:Lab/Research institutions

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Zibo Hangyu Biotechnology Development Co., Ltd

Zibo Hangyu Biotechnology Development Co., Ltd is a leading manufacturer and supplier of chemicals in China. We develop produce and distribute high quality pharmaceuticals, intermediates, special chemicals and OLED intermediates and other fine chemi

High quality Gallium

Cas:7440-55-3

Min.Order:10 Gram

FOB Price: $100.0

Type:Lab/Research institutions

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HANGZHOU YUNUO CHEMICAL CO.,LTD

Superior quality, moderate price & quick delivery. Appearance:light grey solid Storage:Stored in cool, dry and ventilation place; Away from fire and heat Package:1kg/bag, 1kg/drum or 25kg/drum or as per your request. Application:Used in the man

Gallium

Cas:7440-55-3

Min.Order:1 Kilogram

Negotiable

Type:Trading Company

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Zibo Dorne chemical technology co. LTD

Product Details Grade: pharmaceutical grade Purity:99%+ ProductionCapacity: 1000 Kilogram/Month Scope of use: For scientific research only(The product must be used legally) Our Advantage 1. Best quality with competitive price. 2. Quick shipping,

Gallium

Cas:7440-55-3

Min.Order:1 Metric Ton

Negotiable

Type:Lab/Research institutions

inquiry

Hangzhou Ocean Chemical Co., Ltd.

Ocean inorganic department is a professional supplier and exporter engaging in inorganic chemical materials and metal organic compounds. Over the past years, our company is committed to improving the product quality and developing new products, in

Gallium

Cas:7440-55-3

Min.Order:0 Metric Ton

Negotiable

Type:Lab/Research institutions

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Kono Chem Co.,Ltd

high purity lowest priceAppearance:solid or liquid Storage:in sealed air resistant place Package:drum and bag Application:for pharma use Transportation:by sea or air Port:Beijing or Guangzhou

Gallium atomic absorption standard solution

Cas:7440-55-3

Min.Order:0

Negotiable

Type:Other

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Aecochem Corp.

Our clients, like BASF,CHEMO,Brenntag,ASR,Evonik,Merck and etc.Appearance:COA Storage:in stock Application:MSDS/TDS

Gallium

Cas:7440-55-3

Min.Order:0

Negotiable

Type:Manufacturers

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Zhuozhou Wenxi import and Export Co., Ltd

Product Description Description & Specification Category Pharmaceutical Raw Materials, Fine Chemicals, Bulk drug Standard Medical standard

factory directly supply CAS 7440-55-3 with competitive price

Cas:7440-55-3

Min.Order:1 Kilogram

FOB Price: $112.0

Type:Trading Company

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Antimex Chemical Limied

Ansciep Chemical is a professional enterprise manufacturing and distributing fine chemicals and speciality chemicals. We have been dedicated to heterocycle compounds and phenyl rings for tens of years. This is our mature product for export. Our quali

Gallium

Cas:7440-55-3

Min.Order:0

Negotiable

Type:Lab/Research institutions

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Hubei Langyou International Trading Co., Ltd

Gallium CAS NO.7440-55-3 Application:Gallium CAS NO.7440-55-3

Gallium CAS NO.7440-55-3

Cas:7440-55-3

Min.Order:0

Negotiable

Type:Other

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Hunan Russell Chemicals Technology Co.,Ltd

low price and high purityAppearance:solid or liquid Storage:in sealed air resistant place Package:As customer require Application:Pharma;Industry;Agricultural Transportation:by sea or by airplane Port:any port in China

Hunan Longxianng Runhui Trading Co.,Ltd

Gallium CAS NO.7440-55-3Appearance:off-white fine crystalline powder Storage:Dry and ventilated Package:Standard or as customer's require Application:intermediates Transportation:By express (Door to door) such as FEDEX, DHL, EMS for small amount. By

Gallium CAS NO.7440-55-3

Cas:7440-55-3

Min.Order:0

Negotiable

Type:Lab/Research institutions

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Beantown Chemical

in stock Application:7440-55-3

Gallium metal, packaged in polyethylene bottle, 99.9% trace metals basis

Cas:7440-55-3

Min.Order:0

Negotiable

Type:Trading Company

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HWRK Chem

in store Package:5g Application:Organic Chemicals

Gallium

Cas:7440-55-3

Min.Order:0

Negotiable

Type:Trading Company

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HENAN SUNLAKE ENTERPRISE CORPORATION

GALLIUM Basic information Product Name: GALLIUM Synonyms:

7440-55-3 Ga GALLIUM

Cas:7440-55-3

Min.Order:100 Gram

Negotiable

Type:Trading Company

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Wuhan Xinrong New Material Co., Ltd

Competitive edge: 1. Quality: We promise to offer our customers high purity materials which have been approved by GB/T19001-2008 and ISO9001:2008 Standards. For example, our tellurium 7n is the world first class product. You can rest assure

High Purity Gallium 99.99999% Gallium Metal

Cas:7440-55-3

Min.Order:1 Kilogram

FOB Price: $180.0 / 220.0

Type:Trading Company

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Hebei Ruishun Trade Co.,Ltd

Superiority 1.We have more than 10 years experience in this area. 2.We could offer you competitive prices with satisfied quality. 3.Our company provides after-sale service and technical assistance as the customers requirements. 4.As first c

Gallium ingot, 99.99% trace metals basis

Cas:7440-55-3

Min.Order:1 Kilogram

FOB Price: $2.0

Type:Trading Company

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Xiamen BaiFuchem Co.,Ltd

BaiFuChem is a Professional chemical raw material supplier in China, our main products include Biochemical , Pharma Intermediate and Organic chemical etc. BaiFuChem have wealth of products,experience , expertise and state-of-the-art

High quality Gallium

Cas:7440-55-3

Min.Order:1 Kilogram

Negotiable

Type:Other

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WUHAN MCE SUPPLY CO.,LTD

Quick Details Place of Origin: wuhan, China (Mainland) Brand Name: whdx CAS No.:

High Purity Gallium Metal ingot 99.99%

Cas:7440-55-3

Min.Order:0 Metric Ton

Negotiable

Type:Trading Company

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Guangzhou Litop Non-ferrous Metals Co., Ltd.

The gallium,99.99% in purity,we can supply 2-3 metric tons per month. Our products are widely being used in metallurgy, optics, electronics,making alloy and semiconductors,ect. We sincerely welcome worldwide customers and guests cooperate and visi

High pure gallium metal ingot

Cas:7440-55-3

Min.Order:1 Kilogram

Negotiable

Type:Trading Company

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wuhan dongxin mill imp and exp trade co.,ltd

Element type: Non-metal element Gallium (Cd) Product Name: High Purity Gallium高纯镉 Gallium is a soft silvery metal and is a brittle solid at low temperatures. It is one of three elements that occur naturally as a liquid at room temperature,

5n-7n High Purity Gallium

Cas:7440-55-3

Min.Order:0 Metric Ton

Negotiable

Type:Trading Company

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Henan Fine Chemicals Co., Ltd

Best quality & Attractive price & Professional service; Trial & Pilot & CommercialHenan Fine Chemicals Co., LTD. is a diversified technology - oriented integrated company, which mainly concentrates on fine chemicals. Our company is committed to becom

Gallium

Cas:7440-55-3

Min.Order:0

Negotiable

Type:Trading Company

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Synthetic route

decamethylsilicocene

decamethylsilicocene

Gallium trichloride
13450-90-3

Gallium trichloride

A

gallium
7440-55-3

gallium

B

gallium trichloride-pyridine (1/1)
856588-85-7, 15024-93-8

gallium trichloride-pyridine (1/1)

Conditions
ConditionsYield
In toluene inert atmosphere; soln. of Si-compd. cooled to -80°C, addn. of GaCl3 (equiv. amt.) soln., warming to room temp., Gallium pptn. on standing (3-5 d), filtration of Ga, pptn. on pyridine addn. to filtrate; filtration;A 98%
B 87%
decamethylsilicocene

decamethylsilicocene

gallium(III) bromide
13450-88-9

gallium(III) bromide

A

gallium
7440-55-3

gallium

B

pyridine; compound with gallium bromide

pyridine; compound with gallium bromide

Conditions
ConditionsYield
In toluene inert atmosphere; soln. of Si-compd. cooled to -80°C, addn. of GaBr3 (equiv. amt.) soln., warming to room temp., gallium pptn. on standing (3-5 d), filtration of Ga, pptn. on pyridine addn. to filtrate; filtration;A 96%
B 79%
IMes*GaH3
311311-59-8

IMes*GaH3

GaBr3(1,3-dimesitylimidazol-2-ylidene)

GaBr3(1,3-dimesitylimidazol-2-ylidene)

A

gallium
7440-55-3

gallium

B

GaHBr2(1,3-bis(2,4,6-trimethylphenyl)imidazol-2-ylidene)
1159704-40-1

GaHBr2(1,3-bis(2,4,6-trimethylphenyl)imidazol-2-ylidene)

Conditions
ConditionsYield
In toluene (under Ar, Schlenk); soln. of Ga-complex added dropwise to soln. of Ga-complex in toluene with stirring at room temp., heated to 50°C for36 h; filtered, volatiles removed in vacuo;A n/a
B 71%
gallium(III) trichloride

gallium(III) trichloride

ephedrine hydrochloride
63991-26-4

ephedrine hydrochloride

A

gallium
7440-55-3

gallium

B

[Ga(ephedrine)2(Cl)3]

[Ga(ephedrine)2(Cl)3]

Conditions
ConditionsYield
With ammonium hydroxide In methanol for 3h; pH=8 - 9; Reflux;A n/a
B 66%
digallium tetrachloride

digallium tetrachloride

gallium
7440-55-3

gallium

Conditions
ConditionsYield
With 2,3,5,6-tetramethyl-1,4-bis(trimethylsilyl)-1,4-diaza-2,5-cyclo-hexadiene In tetrahydrofuran at 20℃; for 15h; Inert atmosphere;59%
exo-Li(N,N,N',N'-tetramethylethylenediamine)-1-Li(N,N,N',N'-tetramethylethylenediamine)-2,3-(SiMe3)2-2,3-C2B4H4

exo-Li(N,N,N',N'-tetramethylethylenediamine)-1-Li(N,N,N',N'-tetramethylethylenediamine)-2,3-(SiMe3)2-2,3-C2B4H4

Gallium trichloride
13450-90-3

Gallium trichloride

A

gallium
7440-55-3

gallium

B

1-Cl-1-(N,N,N',N'-tetramethylethylenediamine)-2,3-(SiMe3)2-closo-1,2,3-GaC2B4H4

1-Cl-1-(N,N,N',N'-tetramethylethylenediamine)-2,3-(SiMe3)2-closo-1,2,3-GaC2B4H4

Conditions
ConditionsYield
In benzene byproducts: LiCl; addn. of soln. of carborane to GaCl3 (C6H6, 0°C), stirring at room temp. overnight; filtration off of LiCl and Ga, concn.; elem. anal.;A n/a
B 51%
[((((Bu(t))NC(H))2)GaI)2]

[((((Bu(t))NC(H))2)GaI)2]

[LiAs(SiMe3)2*DME]
181886-00-0

[LiAs(SiMe3)2*DME]

A

gallium
7440-55-3

gallium

B

bis(1,4-di-t-butyl-1,4-diazabuta-1,3-diene)gallium
124592-82-1

bis(1,4-di-t-butyl-1,4-diazabuta-1,3-diene)gallium

C

[(((Bu(t))NC(H))2)Ga(As(SiMe3)2)I]

[(((Bu(t))NC(H))2)Ga(As(SiMe3)2)I]

Conditions
ConditionsYield
In diethyl ether under Ar atm. to soln. Ga complex in Et2O LiAs(SiMe3)2*DME in Et2O (1:2)was added at -78°C over 5 min, soln. was warmed to room temp. an d stirred overnight; volatiles were emoved in vacuo, residue was extd. with hexane, filtered,concd., and cooled to -30°C overnight; elem. anal.;A n/a
B n/a
C 33%
lithium tetrahydridogallate

lithium tetrahydridogallate

H2Ga(μ-Cl)2GaH2

H2Ga(μ-Cl)2GaH2

A

gallium
7440-55-3

gallium

B

Li(1+)*GaH3Cl(1-)=LiGaH3Cl

Li(1+)*GaH3Cl(1-)=LiGaH3Cl

C

gallane
13572-93-5

gallane

Conditions
ConditionsYield
With octane byproducts: H2; at -30°C in vac. (<1E-4 mm Hg); Gallane condenses as a white solid, elem. anal.;A n/a
B n/a
C 5%
With octane In solid byproducts: H2; at -30°C in vac. (<1E-4 mm Hg); Gallane condenses as a white solid, elem. anal.;A n/a
B n/a
C 5%
water
7732-18-5

water

Gallium trichloride
13450-90-3

Gallium trichloride

A

gallium
7440-55-3

gallium

gallium oxide hydroxide

gallium oxide hydroxide

Conditions
ConditionsYield
In water byproducts: H(1+); Sonication; Ar atmosphere (1.5 atm); 100 W/cm**2, 20-kHz, room temp., 90 min - 6 h; washing (H2O, 4 times), drying (vac.); detd. by powder X-ray diffraction;A 1%
B n/a
1,1,3,3-tetramethylgyanidine-gallane (1/1)
325774-15-0

1,1,3,3-tetramethylgyanidine-gallane (1/1)

A

gallium
7440-55-3

gallium

B

hydrogen
1333-74-0

hydrogen

C

N,N,N',N'-tetramethylguanidine
80-70-6

N,N,N',N'-tetramethylguanidine

Conditions
ConditionsYield
at 85 - 90℃; Thermodynamic data;
gallium(III) oxide

gallium(III) oxide

gallium
7440-55-3

gallium

Conditions
ConditionsYield
With filter paper coal In neat (no solvent) annealing;
With hydrogen In neat (no solvent) in H2-stream at red heat;;
With filter paper coal In neat (no solvent) annealing;
With H2 In neat (no solvent) in H2-stream at red heat;;
diborane
19287-45-7

diborane

trimethyl gallium
1445-79-0

trimethyl gallium

A

gallium
7440-55-3

gallium

B

methyl diborane
23777-55-1

methyl diborane

C

hydrogen
1333-74-0

hydrogen

Conditions
ConditionsYield
at room temp. with excess of B2H6;
at room temp. with excess of B2H6;
gallium arsenide

gallium arsenide

A

gallium
7440-55-3

gallium

B

arsenic
23878-46-8

arsenic

Conditions
ConditionsYield
In solid at 580-650°C; UPS; Auger spect.;
gallium arsenide

gallium arsenide

gallium
7440-55-3

gallium

Conditions
ConditionsYield
In neat (no solvent) heated at 585 - 750 °C for 3 - 8 min under vac.;
trimethyl gallium
1445-79-0

trimethyl gallium

gallium
7440-55-3

gallium

Conditions
ConditionsYield
In gaseous matrix Kinetics; Irradiation (UV/VIS); photolysis at 403.3 nm; KrF laser; carrier gas H2, D2 or CH4; monitoring fluorescence at 417.2 nm;
In neat (no solvent) deposition of Ga droplets on heated Si substrate (480 °C) at moleflow of GaMe3 of 2.2E-5 mol/min for 30 s;
In neat (no solvent) thermal decompn. on heated Cu or GaAs surfaces; detn. by MPI/MS;
trimethyl gallium
1445-79-0

trimethyl gallium

A

gallium
7440-55-3

gallium

B

monomethyl gallium
99601-83-9

monomethyl gallium

C

dimethylgallium
106693-86-1

dimethylgallium

Conditions
ConditionsYield
In gas byproducts: CH3, C2H6; Irradiation (UV/VIS); laser photolysis;
In gas byproducts: C2H6, CH3; Irradiation (UV/VIS); photolysis (190-310 nm); studied by laser mass spectrometry and UV absorption spectrometry;
gallium(III)

gallium(III)

cadmium
7440-43-9

cadmium

gallium
7440-55-3

gallium

Conditions
ConditionsYield
0%
gallium(III)

gallium(III)

gallium
7440-55-3

gallium

Conditions
ConditionsYield
0%
gallium nitride

gallium nitride

oxygen
80937-33-3

oxygen

silicon
7440-21-3

silicon

A

gallium(III) oxide

gallium(III) oxide

B

gallium
7440-55-3

gallium

Conditions
ConditionsYield
In neat (no solvent) High Pressure; under Ar flow; Si wafer placed on Al plate; Ga droplets (obtained from GaN at 1150°C) transferred by Ar contg. O2 (7.8 Torr partial pressure) and deposited onto Si wafer; heated at 1150°C (400 Torr) for5 h; detd. by scanning and transmission electron microscopy, and energy dispersive X-ray spectroscopy;A n/a
B 0%
C 0%
Gallium trichloride
13450-90-3

Gallium trichloride

gallium
7440-55-3

gallium

Conditions
ConditionsYield
With arsenic(III) trioxide In water Electrochem. Process; electrodeposition, pH 14 (silicon substrate, -2.99 V vs Ag/AgCl,lead substrate, -1.73 V vs Ag/AgCl ); X-ray diffraction, Auger electron spectroscopy;
With potassium hydroxide In potassium hydroxide Electrolysis;
With LiBH(CH2CH3)3 In tetrahydrofuran byproducts: LiCl; (Ar); addn. of dioctylether to THF soln. of Superhydride, stirring for 1.5 at 90°C in vac., addn. of gallium compd.; centrifugation, washing with THF, drying in vac. for 20 min;
gallium

gallium

arsenic

arsenic

gallium arsenide

gallium arsenide

Conditions
ConditionsYield
In neat (no solvent) Ga, As evacuated, closed in an outgassed quartz ampoule at .apprx.1E-4 Pa, heated at 580.+-.20°C, 140h;100%
With iodine In neat (no solvent) stoichiometric amts. of Ga and As heated at 1000°C for 5 days at the presence of a small amts. of iodine; identified by X-ray diffraction;
In gas gas phase reaction of Ga and As vapour at 1E-10 Torr;
gallium
7440-55-3

gallium

germanium
7440-56-4

germanium

antimony
7440-36-0

antimony

Ge#dotGa#dotSb

Ge#dotGa#dotSb

Conditions
ConditionsYield
In neat (no solvent) Ge, Ga and Sb placed in evacuated (1E-2 Pa), sealed quartz ampoules, annealed (800°C, 1400 h); single phase (microstructural analysis), samples prepared with total of 0.25 at.% dopant (Ge = 99.75 at.%) and others with total dopant content of 5 E19 cm-3, also Ge:Sb = 3:1, 1:1 and 1:3;100%
gallium
7440-55-3

gallium

lanthanum
7439-91-0

lanthanum

lanthanum(III) chloride
10099-58-8

lanthanum(III) chloride

La10Cl4Ga5

La10Cl4Ga5

Conditions
ConditionsYield
In neat (no solvent) stoich. mixt. sealed in Ta tubes under Ar; Ta tubes sealed in silica ampoules (1E-2 mbar); heated (900°C, 20 d);100%
gallium
7440-55-3

gallium

germanium
7440-56-4

germanium

gallium doped germanium

gallium doped germanium

Conditions
ConditionsYield
In neat (no solvent) Ge and Ga placed in evacuated (1E-2 Pa), sealed quartz ampoules, annealed (800°C, 1400 h); single phase (microstructural analysis), dopant content of 5 E19 cm-3;100%
gallium
7440-55-3

gallium

antimony
7440-36-0

antimony

galium antimonide

galium antimonide

Conditions
ConditionsYield
In neat (no solvent) Ga, Sb evacuated, closed in an outgassed quartz ampoule at .apprx.1E-4 Pa, heated at 580.+-.20°C, 140h;100%
melting in a quartz crucible in flowing hydrogen (purified over Pd, flow rate 70 ml/min); for compensation of evapn. of Sb, 0.1% excess Sb was applied;;
In neat (no solvent) Sb/Ga flux ratio was approx. 8.5, GaAs(001) as substrate, mol. beam epitaxy;
gallium
7440-55-3

gallium

lanthanum
7439-91-0

lanthanum

lanthanum(III) bromide
13536-79-3

lanthanum(III) bromide

La3Br3Ga

La3Br3Ga

Conditions
ConditionsYield
In neat (no solvent) stoich. mixt. sealed in Ta tubes under Ar; Ta tubes sealed in silica ampoules (1E-2 mbar); heated (850°C, 20 d);100%
gallium
7440-55-3

gallium

lanthanum
7439-91-0

lanthanum

lanthanum(III) bromide
13536-79-3

lanthanum(III) bromide

La10Br4Ga5

La10Br4Ga5

Conditions
ConditionsYield
In neat (no solvent) stoich. mixt. sealed in Ta tubes under Ar; Ta tubes sealed in silica ampoules (1E-2 mbar); heated (950°C, 33 d);100%
gallium
7440-55-3

gallium

cerium(III) bromide
14457-87-5

cerium(III) bromide

Ce4Br2Ga5

Ce4Br2Ga5

Conditions
ConditionsYield
In neat (no solvent, solid phase) all manipulations under Ar atm.; stoich. mixt. of compds. sealed in Ta tubes then tubes sealed inside silica ampoules under vac. (ca. 1E-2 mbar), heated at 930°C for 36 d;100%
gallium
7440-55-3

gallium

ethyl iodide
75-03-6

ethyl iodide

2Ga(3+)*3I(1-)*3C2H5(1-)

2Ga(3+)*3I(1-)*3C2H5(1-)

Conditions
ConditionsYield
With gallium(III) trichloride for 5h; Inert atmosphere; Reflux;100%
gallium
7440-55-3

gallium

methyl iodide
74-88-4

methyl iodide

2Ga(3+)*3I(1-)*3CH3(1-)

2Ga(3+)*3I(1-)*3CH3(1-)

Conditions
ConditionsYield
With gallium(III) trichloride for 2h; Inert atmosphere; Reflux;100%
gallium
7440-55-3

gallium

iodine
7553-56-2

iodine

A

(gallium triiodide)2

(gallium triiodide)2

B

Ga(1+)*GaI4(1-)=Ga2I4
17845-89-5

Ga(1+)*GaI4(1-)=Ga2I4

C

2Ga(1+)*Ga2I6(2-) = Ga2(Ga2I6)

2Ga(1+)*Ga2I6(2-) = Ga2(Ga2I6)

Conditions
ConditionsYield
In toluene at 30℃; Glovebox; Inert atmosphere; Sonication;A n/a
B 100%
C n/a
gallium
7440-55-3

gallium

chlorine
7782-50-5

chlorine

Gallium trichloride
13450-90-3

Gallium trichloride

Conditions
ConditionsYield
In melt 5 mol% excess of gaseous chlorine passed through metal gallium melt;99%
excess Cl2;;
mixt. heating (two-section glass tube, 200-250°C); vac. sublimation (water pump, ca. 250°C);
gallium
7440-55-3

gallium

germanium
7440-56-4

germanium

yttrium

yttrium

Y3Ga9Ge

Y3Ga9Ge

Conditions
ConditionsYield
In melt mixing of Y, Ga and Ge in ratio Y:Ga:Ge as 1:15:1 under N2; slowly heating (60°C/h) up to 1000°C; holding at 1000°C for 5 h; cooling (75°C/h) to 850°C; holding isothermally for 6 days; cooling to 200°C; hot-temp. span-filtration; treatment with 3 M soln. of I2 in DMF for 12-24 h; rinsing with DMF, hot water, drying with acetone and ether;99%
gallium
7440-55-3

gallium

germanium
7440-56-4

germanium

ytterbium

ytterbium

Yb3Ga9Ge

Yb3Ga9Ge

Conditions
ConditionsYield
In melt mixing of Yb, Ga and Ge in ratio Yb:Ga:Ge as 1:15:1 under N2; slowly heating (60°C/h) up to 1000°C; holding at 1000°C for 5h; cooling (75°C/h) to 850°C; holding isothermally for 6 days; cooling to 200°C; hot-temp. span-filtration; treatment with 3 M soln. of I2 in DMF for 12-24 h; rinsing with DMF, hot water, drying with acetone and ether;99%
gallium
7440-55-3

gallium

germanium
7440-56-4

germanium

samarium
7440-19-9

samarium

Sm3Ga9Ge

Sm3Ga9Ge

Conditions
ConditionsYield
In melt mixing of Sm, Ga and Ge in ratio Sm:Ga:Ge as 1:15:1 under N2; slowly heating (60°C/h) up to 1000°C; holding at 1000°C for 5h; cooling (75°C/h) to 850°C; holding isothermally for 6 days; cooling to 200°C; hot-temp. span-filtration; treatment with 3 M soln. of I2 in DMF for 12-24 h; rinsing with DMF, hot water, drying with acetone and ether;99%
erbium

erbium

gallium
7440-55-3

gallium

ammonia
7664-41-7

ammonia

erbium-implanted gallium nitride

erbium-implanted gallium nitride

Conditions
ConditionsYield
In melt Ga mixed with 1 mol% Er in presence of wetting agent Bi in quartz tube placed in furnace, after purging with Ar for 1 h, heating under Ar flow at 950-1050 °C, gas switched from Ar to NH3, temp. held for 3-5 h;99%
In gas Ga and Er were deposited on sapphire substrate at 700°C under ammonia flow;
gallium
7440-55-3

gallium

triethylarsine diiodide
81795-88-2

triethylarsine diiodide

[GaI2(As(C2H5)3)]2
182921-15-9

[GaI2(As(C2H5)3)]2

Conditions
ConditionsYield
In not given recrystn. (Et2O);99%
gallium
7440-55-3

gallium

methanesulfonic acid
75-75-2

methanesulfonic acid

galium(III) mesylate

galium(III) mesylate

Conditions
ConditionsYield
In nitromethane at 20℃; for 1.5h; Sonication;99%
gallium
7440-55-3

gallium

water
7732-18-5

water

gallium(III) oxide

gallium(III) oxide

Conditions
ConditionsYield
Stage #1: gallium; water With hydrogenchloride; potassium oxalate; urea at 20℃; for 0.5h;
Stage #2: at 179.84℃; for 3h; Reagent/catalyst; Autoclave;
99%
gallium
7440-55-3

gallium

chlorine
7782-50-5

chlorine

gallium(III) trichloride

gallium(III) trichloride

Conditions
ConditionsYield
Heating;99%
In neat (no solvent)
gallium
7440-55-3

gallium

aluminium
7429-90-5

aluminium

aluminum gallium

aluminum gallium

Conditions
ConditionsYield
In neat (no solvent) Al and Ga metals were heated in sealed quartz tube to 700° and then cooled to room temp.;98%
In neat (no solvent)
In neat (no solvent)
In neat (no solvent) melting Ga and Al in a porcelain tube in vac.;;
gallium
7440-55-3

gallium

3,5-di-tert-butyl-o-benzoquinone
3383-21-9

3,5-di-tert-butyl-o-benzoquinone

gallium(III) tris(3,5-di-tert-butyl-1,2-semibenzoquinonate)

gallium(III) tris(3,5-di-tert-butyl-1,2-semibenzoquinonate)

Conditions
ConditionsYield
In toluene N2 atmosphere; refluxing (24 h); removal of solvent; elem. anal.;98%
gallium
7440-55-3

gallium

9,10-phenanthrenequinone
84-11-7

9,10-phenanthrenequinone

gallium(III) tris(9,10-phenanthrenesemiquinonate)

gallium(III) tris(9,10-phenanthrenesemiquinonate)

Conditions
ConditionsYield
In toluene 1:3 mixt. refluxed in toluene for 18 h (until metal was completely dissolved); filtration, evapd. to dryness, elem. anal.;98%
gallium
7440-55-3

gallium

2,6-bis[1-[(2,6-di(iso-propyl)phenyl)imino]-benzyl]pyridine
301658-93-5

2,6-bis[1-[(2,6-di(iso-propyl)phenyl)imino]-benzyl]pyridine

iodine
7553-56-2

iodine

toluene
108-88-3

toluene

[GaI2(2,6-bis[1-[(2,5-di(isopropyl)phenyl)imino]benzyl]pyridine)GaI4]3*toluene

[GaI2(2,6-bis[1-[(2,5-di(isopropyl)phenyl)imino]benzyl]pyridine)GaI4]3*toluene

Conditions
ConditionsYield
In toluene Sonication; (under N2); Ga and I2 added to soln. of ligand in toluene, sealed, sonicated for 3 h, stirred overnight; filtered, washed with hexane, dried under vac.;98%
gallium
7440-55-3

gallium

methyl aluminium sesquichloride

methyl aluminium sesquichloride

A

trimethylaluminum
75-24-1

trimethylaluminum

B

trimethyl gallium
1445-79-0

trimethyl gallium

Conditions
ConditionsYield
With methylene chloride; sodium at 40 - 50℃; under 375.038 Torr; Inert atmosphere; Flow reactor;A 93.7%
B 96.8%
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