Indium supplier | CasNO.7440-74-6

Name
Indium
EINECS 231-180-0
CAS No. 7440-74-6
Article Data207
CAS DataBase
Density 7.30
Solubility insoluble
Melting Point 156 ºC
Formula In
Boiling Point 2000 ºC
Molecular Weight 114.82
Flash Point 2072°C
Transport Information UN 3089 4.1/PG 2
Appearance solid
Safety S9-16-36/37/39-26-45-28
Risk Codes R20/21/22;R36/37/38
Molecular Structure
Hazard Symbols
Synonyms INE 07PB;Indium element;
PSA 0.00000
LogP 0.33750

Synthetic route

: indium sulfate

: 7440-74-6
indium

Conditions

Conditions	Yield
In not given Electrolysis; at 60°C;for 40 min; density of current 3-6 A/dm^2; electrolyte: in the presence of K-Na-tartarate;	100%
In not given Electrolysis; at 60°C;for 40 min; density of current 3-6 A/dm^2; in the presence of H2SO4;	100%
In not given Electrolysis; at 60°C;for 40 min; density of current 3-6 A/dm^2; in the presence of acetic acid, Na-acetate;	100%

: 6731-23-3
triisobutylindium

A: 7440-74-6
indium

B: 115-11-7
isobutene

Conditions

Conditions	Yield
In decalin byproducts: isobutane; pyrolysis in decalin under dry and deoxygenated N2 (140°C, 24 h); GLC anal. of org. products;	A >99 B 96%

: ([(2,6-i-Pr2-C6H3)NC(Me)]2CH)Ga(Et)InEt2

A: 7440-74-6
indium

B: ([(2,6-i-Pr2-C6H3)NC(Me)]2CH)GaEt2

C: 923-34-2
Triethylindium

Conditions

Conditions	Yield
In toluene at 20℃; for 24h; Inert atmosphere; Schlenk technique; Glovebox;	A 96% B 94% C n/a

...Expand

: 1277-43-6
cobaltocene

: 675617-71-7
indium(I) trifluoromethanesulfonate

A: 7440-74-6
indium

B: [(η(5)-C5H5)2Co]O3SCF3

Conditions

Conditions	Yield
In dichloromethane addn. of soln. of Cp2Co in CH2Cl2 to suspn. of InOTf in CH2Cl2; pptn., filtration, rinsing of ppt. with CH2Cl2; removal of solvent in vac.; slow evapn of concd. CH2Cl2 soln.; crystn.;	A n/a B 90.1%

...Expand

: indium(II) bromide

A: 7440-74-6
indium

B: 13465-09-3
indium tribromide

Conditions

Conditions	Yield
With dimethyl sulfoxide In benzene	A 90% B n/a
With [2,2]bipyridinyl In benzene	A 90% B n/a
With triethylamine In benzene	A 90% B n/a

: 101749-61-5
tri-sec-butylindium

A: 7440-74-6
indium

B: 538-39-6
1,2-di-p-tolylethane

Conditions

Conditions	Yield
In xylene pyrolysis in p-xylene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;	A n/a B 85%

: 101749-61-5
tri-sec-butylindium

A: 7440-74-6
indium

B: 4662-96-8
1,2-di-m-tolylethane

Conditions

Conditions	Yield
In m-xylene=m-xylol pyrolysis in m-xylene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;	A n/a B 83%

: 101749-61-5
tri-sec-butylindium

A: 7440-74-6
indium

B: 952-80-7
1,2-bis(2-methylphenyl)ethane

Conditions

Conditions	Yield
In o-xylene=o-xylol pyrolysis in o-xylene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;	A n/a B 72%

: 17144-80-8
triisopropyl indium

A: 7440-74-6
indium

B: 538-39-6
1,2-di-p-tolylethane

Conditions

Conditions	Yield
In xylene pyrolysis in p-xylene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;	A n/a B 67%

: indium chloride

: 51905-34-1
lithium pentamethylcyclopentadienide

A: 7440-74-6
indium

B: indiumpentamethylcyclopentadienide

C: 117469-41-7
bis(pentamethylcyclopentadienyl)indium(III) chloride

D: 69446-48-6
decamethylfulvalene

Conditions

Conditions	Yield
In diethyl ether InCl added to suspension of Li(C5(CH3)5), stirred for 5h at room temp.; exclusion of air and moisture; filtered, washed four times with ether, sublimation; elem. anal.;	A 21% B 62.01% C 5% D 2.5%

...Expand

: 101749-61-5
tri-sec-butylindium

A: 7440-74-6
indium

B: 82721-36-6
2,2',3,3'-tetrahydro-1H,1'H-1,1'-biindene

Conditions

Conditions	Yield
In further solvent(s) pyrolysis in indane under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;	A n/a B 62%

: 15676-66-1
tri-n-butylindium

A: 106-98-9
1-butylene

B: 7440-74-6
indium

Conditions

Conditions	Yield
In decalin byproducts: butene; pyrolysis in decalin under dry and deoxygenated N2 (140°C, 24 h); GLC anal. of org. products;	A 60% B >99

: 101749-61-5
tri-sec-butylindium

A: 7440-74-6
indium

B: 5216-35-3
1,2-bis(4-chlorophenyl)ethane

Conditions

Conditions	Yield
In further solvent(s) pyrolysis in p-chlorotoluene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;	A n/a B 60%

: 101749-61-5
tri-sec-butylindium

A: 7440-74-6
indium

B: 1154-13-8
1,1'-bitetralyl

Conditions

Conditions	Yield
In tetralin pyrolysis in tetralin under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;	A n/a B 60%

: 101749-61-5
tri-sec-butylindium

A: 7440-74-6
indium

B: 1857-74-5, 2726-21-8, 4539-34-8, 4613-11-0, 71606-46-7, 5789-35-5
2,3-diphenylbutane

Conditions

Conditions	Yield
In ethylbenzene pyrolysis in ethylbenzene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;	A n/a B 51%

: 101749-61-5
tri-sec-butylindium

A: 7440-74-6
indium

B: 583-48-2
3,4-dimethylhexane

C: 107-01-7
butene-2

D: 106-97-8
n-butane

Conditions

Conditions	Yield
In decalin pyrolysis in decalin under dry and deoxygenated N2 (140°C, 24 h); GLC anal. of org. products;	A >99 B 10% C 30% D 40%

...Expand

: 101749-61-5
tri-sec-butylindium

A: 7440-74-6
indium

B: 1657-55-2
1,2-bis(4-methoxyphenyl)ethane

Conditions

Conditions	Yield
In further solvent(s) pyrolysis in p-methoxytoluene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;	A n/a B 35%

: 139408-74-5
K(1+)*{HIn(CH2C(CH3)3)3}(1-)=K{HIn(CH2C(CH3)3)3}

: 40244-90-4
Chlorodiisopropylphosphane

A: 7440-74-6
indium

B: 380456-91-7
(((CH3)3CCH2)2In(P(CH(CH3)2)2))2

C: 380456-92-8
((CH3)3CCH2)3In*P(H)(CH(CH3)2)2

D: 380456-93-9
((CH3)3CCH2)3In*P2(CH(CH3)2)4

Conditions

Conditions	Yield
In pentane byproducts: H2, (Me3CCH2)P(i-Pr)2, KCl; under Ar, standard vac. line techniques; pentane solns. of ClP(i-Pr)2 and In compd. (molar ratio 1:1) cooled to -78°C; combined; warmed slowly to room temp.; stirred for 2 d; pentane sol. products sepd. from ppt. by extn. (8 times); solvent removed by vac. distn. at 0°C; mixt. of three In compds. obtained; P2(i-Pr)4 adduct crystd. at room temp. in drybox; detd. by (1)H and (31)P NMR spectroscopy;	A n/a B n/a C n/a D 33.7%

Yield

In pentane byproducts: H2, (Me3CCH2)P(i-Pr)2, KCl; under Ar, standard vac. line techniques; pentane solns. of ClP(i-Pr)2 and In compd. (molar ratio 1:1) cooled to -78°C; combined; warmed slowly to room temp.; stirred for 2 d; pentane sol. products sepd. from ppt. by extn. (8 times); solvent removed by vac. distn. at 0°C; mixt. of three In compds. obtained; P2(i-Pr)4 adduct crystd. at room temp. in drybox; detd. by (1)H and (31)P NMR spectroscopy;

A n/a
B n/a
C n/a
D 33.7%

...Expand

: indium chloride

: 110-18-9
N,N,N,N,-tetramethylethylenediamine

: 10025-82-8
indium(III) chloride

A: 7440-74-6
indium

: 99666-60-1
Cl2InCH2InCl2((CH2N(CH3)2)2)2

C: InCl3*0.67(CH2N(CH3)2)2*0.67CH2Cl2

Conditions

Conditions	Yield
With methylene chloride In dichloromethane; toluene equimolar amts. of InCl and InCl3 suspended in CH2Cl2-toluene (1:1, v/v) at -80°C, TMEDA added, stirred, allowed to reach room temp., further stirred for 1 h (total react. time 3-4 h); filtered, crystals deposited on standing collected and dried under vac., further crop obtained by addn. of Et2O to mother liquor and recrystn. (CH2Cl2); InCl3 solvate isolated from separate expt. by addn. of petroleum ether to react. mixt.; elem. anal.;	A n/a B 20% C n/a

Yield

With methylene chloride In dichloromethane; toluene equimolar amts. of InCl and InCl3 suspended in CH2Cl2-toluene (1:1, v/v) at -80°C, TMEDA added, stirred, allowed to reach room temp., further stirred for 1 h (total react. time 3-4 h); filtered, crystals deposited on standing collected and dried under vac., further crop obtained by addn. of Et2O to mother liquor and recrystn. (CH2Cl2); InCl3 solvate isolated from separate expt. by addn. of petroleum ether to react. mixt.; elem. anal.;

A n/a
B 20%
C n/a

...Expand

: 128448-03-3
lithium tetrahydridoindanate

: 39896-06-5
quinuclidine hydrochloride

: 7550-35-8
lithium bromide

A: 7440-74-6
indium

B: [H(quinuclidine)2][In5Br8(quinuclidine)4]

Conditions

Conditions	Yield
In diethyl ether byproducts: H2, LiCl; quinuclidine hydrochloride added over 5 min to an in situ generated soln. of LiInH4 contg. LiBr in Et2O at -78°C, warmed to -30°C,stirred for 2 h, filtered, kept at this temp. for 72 h; evapd. (vac.), extd. (toluene), crystd. at -50°C overnight;	A n/a B 17%

...Expand

: indium(I) bromide

: 103349-41-3
sodium tri-tert-butylsilanide

A: 7440-74-6
indium

B: 174809-84-8
tetrasupersilyldiindium

Conditions

Conditions	Yield
In tetrahydrofuran byproducts: tBu3SiH, tBu3SiBr, (tBu3Si)2; equimolar ratio, stirring (-78°C, 12 h), warming (room temp.); volatile compds. removal (vac.), dissoln. (pentane), filtn., pptn. (1 week, -23°C); elem. anal.;	A n/a B 16.2%
In tetrahydrofuran byproducts: NaBr; equimolar ratio, stirring (-78°C, 12 h), warming (room temp.); volatile compds. removal (vac.), dissoln. (pentane), filtn., pptn. (1 week, -23°C); elem. anal.;	A n/a B 16.2%

...Expand

: 871347-07-8
(Cp(*)Fe(CO)2)2InI

: 79060-88-1
sodium tetrakis[(3,5-di-trifluoromethyl)phenyl]borate

A: 7440-74-6
indium

B: 871347-11-4
[((η5-C5Me5)Fe(CO)2)2(μ-I)][B(C6H3(CF3)2-3,5)4]

Conditions

Conditions	Yield
In dichloromethane (N2 or Ar); a soln. of Fe complex added to a suspn. of B complex at -78°C, warmed to 20°C over 30 min, stirred for 3 h; filtered, layered with hexanes;	A n/a B 15%

...Expand

: [(C2H5)2InSb(Si(CH3)3)2]3

A: 7440-74-6
indium

B: indium(III) antimonide

Conditions

Conditions	Yield
In neat (no solvent) byproducts: ethylene, HSiMe3; heated under vac. to 400°C for 10 h;	A n/a B 13%

: indium chloride

: 110-18-9
N,N,N,N,-tetramethylethylenediamine

: 10025-82-8
indium(III) chloride

A: 7440-74-6
indium

: 99666-60-1
Cl2InCH2InCl2((CH2N(CH3)2)2)2

Conditions

Conditions	Yield
With methylene chloride In dichloromethane InCl and catalitic amts. of InCl3 suspended in CH2Cl2 at -80°C, TMEDA added, allowed to reach room temp. over ca. 2 h; Et2O added, ppt. collected, dried;	A n/a B 10%

...Expand

: 12078-28-3, 38979-86-1
dicarbonylcyclopentadienyliodoiron(II)

: 769959-24-2
[CH((CH3)2CN-2,6-(i)Pr2C6H3)2In]

: 79060-88-1
sodium tetrakis[(3,5-di-trifluoromethyl)phenyl]borate

A: 7440-74-6
indium

B: 1036767-96-0
[((2,6-diisopropylphenyl-NC(Me))2CH)Fe(III)(η5-cyclopentadienyl)(CO)][B(C6H3(CF3)2-3,5)4]

Conditions

Conditions	Yield
In tetrahydrofuran under N2 or Ar; THF added to solid mixt. of Fe complex and NaB(C6H3(CF3)2)4; THF soln. of In compd. added; volatiles removed; extd. into toluene; soln. filtered; layered with hexane; crystd. for 1 wk; elem. anal.;	A n/a B 10%

...Expand

: indium(III) oxide

: 7440-74-6
indium

Conditions

Conditions	Yield
With magnesium violent but incomplete reaction;
With sodium carbonate; pyrographite in blow pipe;
With hydrogen in tube with H2-flow;

: indium(III) oxide

: 7439-96-5
manganese

A: 7440-74-6
indium

B: manganese(II) oxide

Conditions

Conditions	Yield
In neat (no solvent) (Ar); In2O3 and Mn reacted in 1:1 or 1:2 or 2:1 molar ratio; powdered inmortar; sealed under vacuum in quartz ampoule; heated to 723 K and with 0.5 K/h to 973 K; maintained for 7 days; cooled to 0.8 K/h to 473 K; le ft standing at room temp.;

...Expand

: 7440-74-6
indium

: 7732-18-5
water

: 1333-74-0
hydrogen

Conditions

Conditions	Yield
byproducts: In2O3; at 473°K and then at 673-773°K more;	100%

: arsenic

: 7440-74-6
indium

: indium arsenide

Conditions

Conditions	Yield
In neat (no solvent) In, As evacuated, closed in an outgassed quartz ampoule at .apprx.1E-4 Pa, heated at 580.+-.20°C, 150h;	100%
In neat (no solvent) deposited at GaAs by periodic supply of As and Ga species, deposition times was 25 min;
In, As sources used on InAs substrate at 450 to 525°C;
In neat (no solvent) mixt. melting (evac. sealed quartz capsule, 7E-4 hPa); differential thermal anal.;
In neat (no solvent, solid phase) annealing (800 K, 7 d);

: 7440-74-6
indium

: 7440-36-0
antimony

: indium(III) antimonide

Conditions

Conditions	Yield
In neat (no solvent) In, Sb evacuated, closed in an outgassed quartz ampoule at .apprx.1E-4 Pa, heated at 500.+-.20°C, 70h or heated at 400.+-.20°C, 110h;	100%
In melt crystn. from the melt with nearly stoichiometric composition;; single crystals obtained;;
In neat (no solvent) High Pressure; 0.7 GPa, laser heating;

: 7440-74-6
indium

: 92-44-4
2,3-naphthalenediol

: 121581-68-8, 121581-73-5
In{OC10H6(OH)-2,3}

Conditions

Conditions	Yield
With Et4NClO4 In acetonitrile byproducts: H2; Electrolysis; using indium metall anode, platinum wire cathode in soln. of Et4NClO4 and dihydroxynaphthalene (2 h, N2, 20 mA), hydrogen gas evolving at the cathode and forming product at the anode; product collected by filtration, washed with acetonitrile and Et2O, dried (vac.); elem. anal.;	100%

: 7440-74-6
indium

: 7439-91-0
lanthanum

: tellurium

: cesium chloride

A: CsInTe2

B: Cs3LaCl6

Conditions

Conditions	Yield
at 299.84 - 999.84℃;	A 100% B n/a

...Expand

: 7440-56-4
germanium

: 7440-74-6
indium

: 7440-36-0
antimony

: 7440-31-5
tin

: tellurium

: Ge0286Sn0286In0143Sb0143Te

Conditions

Conditions	Yield
at 590 - 900℃; for 120h; Inert atmosphere;	100%

...Expand

: 7440-56-4
germanium

: 7440-74-6
indium

: 7440-36-0
antimony

: 7440-31-5
tin

: tellurium

: Ge0.72Sn0.08In0067Sb0067Te

Conditions

Conditions	Yield
at 590 - 900℃; for 120h; Inert atmosphere;	100%

...Expand

: 7440-56-4
germanium

: 7440-74-6
indium

: 7440-36-0
antimony

: 7440-31-5
tin

: tellurium

: Ge0.24Sn0.56In0067Sb0067Te

Conditions

Conditions	Yield
at 590 - 900℃; for 120h; Inert atmosphere;	100%

...Expand

: 7440-56-4
germanium

: 7440-74-6
indium

: 7440-36-0
antimony

: 7440-31-5
tin

: tellurium

: Ge0.08Sn0.72In0067Sb0067Te

Conditions

Conditions	Yield
at 590 - 900℃; for 120h; Inert atmosphere;	100%

...Expand

: 7440-56-4
germanium

: 7440-74-6
indium

: 7440-36-0
antimony

: 7440-31-5
tin

: tellurium

: Ge0.4Sn0.4In0067Sb0067Te

Conditions

Conditions	Yield
at 590 - 900℃; for 120h; Inert atmosphere;	100%

...Expand

: 7440-56-4
germanium

: 7440-74-6
indium

: 7440-36-0
antimony

: 7440-31-5
tin

: tellurium

: Ge0.35Sn0.35In0.1Sb0.1Te

Conditions

Conditions	Yield
at 590 - 900℃; for 120h; Inert atmosphere;	100%

...Expand

: 7440-56-4
germanium

: 7440-74-6
indium

: 7440-36-0
antimony

: 7440-31-5
tin

: tellurium

: Ge0.5Sn0.5InSbTe4

Conditions

Conditions	Yield
at 550 - 950℃; for 240h; Inert atmosphere;	100%

...Expand

: 7440-56-4
germanium

: 7440-74-6
indium

: 7440-36-0
antimony

: 7440-31-5
tin

: tellurium

: GeSnInSbTe5

Conditions

Conditions	Yield
at 350 - 950℃; for 240h; Inert atmosphere;	100%

...Expand

: 7440-56-4
germanium

: 7440-74-6
indium

: 7440-36-0
antimony

: tellurium

: Ge0.8In0067Sb0067Te

Conditions

Conditions	Yield
at 590 - 900℃; for 120h; Inert atmosphere;	100%

...Expand

: 7440-74-6
indium

: 7440-36-0
antimony

: 7440-31-5
tin

: tellurium

: Sn0.8In0067Sb0067Te

Conditions

Conditions	Yield
at 590 - 900℃; for 120h; Inert atmosphere;	100%

...Expand

: 7440-56-4
germanium

: 7440-74-6
indium

: 7440-31-5
tin

: tellurium

: Ge0.4Sn0.4In0.13Te

Conditions

Conditions	Yield
at 590 - 900℃; for 120h; Inert atmosphere;	100%

...Expand

: 7440-74-6
indium

: 1493-13-6
trifluorormethanesulfonic acid

: 67-68-5
dimethyl sulfoxide

: indium(III) triflate - dimethylsulfoxide (1/7)

Conditions

Conditions	Yield
With oxygen In dimethyl sulfoxide metal. In under O2 atm. treated with DMSO and triflic acid (3 equiv.) in3 portions, heated at 100°C for 22 h;	99%

...Expand

: arsenic

: niobium

: 7440-74-6
indium

: 7440-09-7
potassium

: 10K(1+)*NbInAs6(10-)=K10NbInAs6

Conditions

Conditions	Yield
In neat (no solvent) mixt. K, Nb, In, and As was sealed in Nb container, enclosed in evacuated fused-silica ampule and heated at 600°C for a week and cooled slowly; elem. anal.;	99%

...Expand

: gadolinium

: 7440-56-4
germanium

: 7440-74-6
indium

: Gd2InGe2

Conditions

Conditions	Yield
In neat (no solvent) (Ar); a mixt. of Gd, Ge, and In sealed (vac.), heated;	99%

...Expand

: 7440-74-6
indium

: 7439-91-0
lanthanum

: 7440-57-5, 457905-15-6
gold

: LaAu2In4

Conditions

Conditions	Yield
In melt heating lanthanum, gold and indium in molar ratio 1:2:4 to 1000 for 10 hin vac., keeping at 1000°C for 120 h; cooling to room temp. for 48 h, X-ray anal.;	99%

...Expand

: 7440-74-6
indium

: praseodymium

: 7440-57-5, 457905-15-6
gold

: PrAu2In4

Conditions

Conditions	Yield
In melt heating praseodymium, gold and indium in molar ratio 1:2:4 to 1000 for 10 h in vac., keeping at 1000°C for 120 h; cooing to room temp. for 48 h, X-ray anal.;	99%

...Expand

: 7440-45-1
cerium

: 7440-74-6
indium

: 7440-57-5, 457905-15-6
gold

: CeAu2In4

Conditions

Conditions	Yield
In melt heating cerium, gold and indium in molar ratio 1:2:4 to 1000 for 10 h invac., keeping at 1000°C for 120 h; cooling to room temp. for 48 h, X-ray anal.;	99%

...Expand

: 109-99-9
tetrahydrofuran

: 7440-74-6
indium

: 344-04-7
bromopentafluorobenzene

: 7726-95-6
bromine

bis(tetrahydrofuran)(pentafluorophenyl)indium dibromide: bis(tetrahydrofuran)(pentafluorophenyl)indium dibromide

Conditions

Conditions	Yield
In tetrahydrofuran	99%

...Expand

: 110-86-1
pyridine

: 7440-74-6
indium

: 344-04-7
bromopentafluorobenzene

: 7726-95-6
bromine

: bis(pyridine)(pentafluorophenyl)indium dibromide

Conditions

Conditions	Yield
In dichloromethane	99%

...Expand

: neodymium

: 7440-74-6
indium

: 7440-57-5, 457905-15-6
gold

: NdAu2In4

Conditions

Conditions	Yield
In melt heating neodymium, gold and indium in molar ratio 1:2:4 to 1000 for 10 hin vac., keeping at 1000°C for 120 h; cooling to room temp. for 48 h, X-ray anal.;	99%

...Expand

: 7440-74-6
indium

: 104-15-4
toluene-4-sulfonic acid

: indium(III) tosylate

Conditions

Conditions	Yield
In nitromethane at 20℃; for 1.5h; Sonication;	99%

: 7440-74-6
indium

: 75-08-1
ethanethiol

: tris(ethylthio)indane

Conditions

Conditions	Yield
With oxygen; tetraethylammonium perchlorate In acetonitrile Electrolysis; bubbling O2 through a soln. of thiol in CH3CN/Et4NClO4, electrolysis (open to atmosphere): Pt cathode, In anode, 15V, 50 mA, 1.0 h react. time, at the end of electrolysis stirring for ca. 12 h; filtration, washing with CH3CN, then petroleum ether, drying in vac.; elem. anal.;	98%

: 7440-74-6
indium

: 1493-13-6
trifluorormethanesulfonic acid

: indium(III) triflate

Conditions

Conditions	Yield
In nitromethane at 20℃; for 0.5h; Sonication;	98%

Indium History

The German chemists Ferdinand Reich and Hieronymous Theodor Richter dissolved the minerals pyrite, arsenopyrite, galena and sphalerite in hydrochloric acid and distilled the raw zinc chloride. As it was known that ores from that region sometimes contain thallium they searched for the green emission lines with spectroscopic methods. They named the element with the blue spectral line indium. Richter went on to isolate the metal in 1864.
Until 1924, only approximately a gram of Indium (CAS NO.7440-74-6) constituted the world's supply.

Indium Consensus Reports

Reported in EPA TSCA Inventory.

Indium Standards and Recommendations

OSHA PEL: TWA 0.1 mg(In)/m³
ACGIH TLV: TWA 0.1 mg(In)/m³

Indium Specification

The Indium, with the cas registry number 7440-74-6, is a kind of silver gray fusible metal. This is insoluble in water, stable chemically but incompatible with strong acids, strong oxidizing agents, sulfur. Its product categories are including Inorganics; Indium; Metal and Ceramic Science; Metals; Catalysis and Inorganic Chemistry; Chemical Synthesis; IndiumMetal and Ceramic Science; IApplication CRMs; ICP CRMs; Alphabetic; Analytical Standards; ICP-OES/-MS; ICPSpectroscopy; Spectroscopy.

The physical properties of this chemical are below: (1)#H bond acceptors: 0; (2)#H bond donors: 0; (3)#Freely Rotating Bonds: 0; (4)Polar Surface Area: 0; (5)Exact Mass: 114.903878; (6)MonoIsotopic Mass: 114.903878; (7)Topological Polar Surface Area: 0; (8)Heavy Atom Count: 1; (9)Covalently-Bonded Unit Count: 1

The production method of this chemical is below: all kinds of waste and intermediate products from the production of lead, Zinc, antimony, tin go through the process of enriched oxidation, extraction, metathesis and electrolysis to get this chemical.

As to its usage, it is widely applied in many ways. It could be used as the doping agent in compound semiconductor and high purity semiconductor [semiconducting] material; It could also be used in producing low melting point alloy and indium; Then it could also be applied in electron electroplate industry.

When you are using this chemical, you should be very cautious. For one thing, it is irritant which may cause inflammation to the skin or other mucous membranes, and it is irritating to eyes, respiratory system and skin. For another thing, it is harmful which may cause damage to health. If by inhalation, in contact with skin and if swallowed, it will be harmful. In addition, it is highly flammable which may catch fire in contact with air, only needing brief contact with an ignition source, and it has a very low flash point or evolve highly flammable gases in contact with water. Beside all these, it is corrosive which may destroy living tissue on contact.

Due to so many dangers, you could take the different measures to deal with different cases. Wear suitable protective clothing, gloves and eye/face protection. If in case of contact with eyes, rinse immediately with plenty of water and seek medical advice, and if in case of accident or if you feel unwell, seek medical advice immediately (show the label whenever possible). Then when store it, keep container in a well-ventilated place away from sources of ignition. After contact with skin, wash immediately with plenty of soap-suds.

Additionally, you could convert the following datas into the molecular structure:
(1)Canonical SMILES: [In]
(2)InChI: InChI=1S/In
(3)InChIKey: APFVFJFRJDLVQX-UHFFFAOYSA-N

Below are the toxicity information of this chemical:

Organism	Test Type	Route	Reported Dose (Normalized Dose)	Effect	Source
mouse	LDLo	subcutaneous	10mg/kg (10mg/kg)		"Toxicity of Industrial Metals," Browning, E., London, Butterworths, 1961Vol. -, Pg. 144, 1961.

Product Name

Indium

Synthetic route

Indium History

Indium Consensus Reports

Indium Standards and Recommendations

Indium Specification

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