Trichlorosilane supplier | CasNO.10025-78-2

Name
Trichlorosilane
EINECS 233-042-5
CAS No. 10025-78-2
Article Data104
CAS DataBase
Density 1.34 g/cm³
Solubility Water: decomposes
Melting Point -127 °C
Formula Cl₃HSi
Boiling Point 31.8 °C at 760 mmHg
Molecular Weight 135.452
Flash Point -27 °C
Transport Information UN 1295 4.3/PG 1
Appearance Clear liquid
Safety 16-26-36/37/39-43-45-7/9-43A
Risk Codes 12-14-17-20/22-29-35
Molecular Structure
Hazard Symbols F+,C
Synonyms Silicochloroform;Silicon chloride hydride (SiCl₃H);CCRIS 9413;Trichloromonosilane;Trichlorosilane (HSiCl₃);HSDB 890;Silane A-19;Silici-chloroforme;Triclorosilano;Silane,trichloro-;
PSA 0.00000
LogP 1.42000

Synthetic route

: 7440-21-3
silicon

A: 75-79-6
Methyltrichlorosilane

B: 10026-04-7, 53609-55-5
tetrachlorosilane

C: 10025-78-2
trichlorosilane

D: 75-78-5
dimethylsilicon dichloride

Conditions

Conditions	Yield
With methylene chloride; copper In neat (no solvent) mixt. of CH3Cl/N2 (2:5) and Si-Cu (9:1) at 300°C;;	A 4% B n/a C n/a D 86.5%
With methylene chloride; copper In neat (no solvent) mixt. of CH3Cl/N2 (2:5) and Si-Cu (9:1) at 300°C;;	A 4% B n/a C n/a D 86.5%
With methylene chloride; copper In neat (no solvent) CH3Cl and Si-Cu mixt. (8:2) at 350°C;;

...Expand

: 141-57-1
n-propyltrichlorosilane

: 10025-78-2
trichlorosilane

Conditions

Conditions	Yield
With hydrogen; Rh, Re/C at 550℃; under 5807.73 Torr; for 10.1h; Product distribution / selectivity;	82%

: 7647-01-0
hydrogenchloride

Cu(b),Si(20) (X%): Cu(b),Si(20) (X%)

A: 10026-04-7, 53609-55-5
tetrachlorosilane

B: 10025-78-2
trichlorosilane

Conditions

Conditions	Yield
In neat (no solvent) reaction at 300 °C;;	A 20% B 80%
In neat (no solvent) reaction at 300 °C;;	A 20% B 80%

...Expand

: 115-21-9
ethyltrichlorosilane

: 10025-78-2
trichlorosilane

Conditions

Conditions	Yield
With hydrogen; Rh, Re/C at 700℃; under 5947.36 Torr; for 17.8833h; Product distribution / selectivity;	75.3%

: 75-79-6
Methyltrichlorosilane

A: 10026-04-7, 53609-55-5
tetrachlorosilane

B: 10025-78-2
trichlorosilane

Conditions

Conditions	Yield
With hydrogen; Rh/C at 800℃; Product distribution / selectivity;	A 73.3% B 25.1%

: 10026-04-7, 53609-55-5
tetrachlorosilane

: 1333-74-0
hydrogen

: 10025-78-2
trichlorosilane

Conditions

Conditions	Yield
In neat (no solvent) SiCl4 reacted with H2 in thermo-plasma at 50 kW at 3500-5000 K;	72.9%
In neat (no solvent) Kinetics; byproducts: hydrogen chloride; bubbling H2 through liq. SiCl4 at constant temp.; introducing into the discharge zone; various product ratios yield various H2:SiCl4 molar ratio, molar energy input, and pressure; gas chromy.;	60%
at 900 - 1300℃; under 1125.11 - 3750.38 Torr; Product distribution / selectivity;

: 75-79-6
Methyltrichlorosilane

: 10025-78-2
trichlorosilane

Conditions

Conditions	Yield
With hydrogen; Rh, Re/C at 550℃; under 4556.19 Torr; for 4.55h; Product distribution / selectivity;	70.8%

: 7647-01-0
hydrogenchloride

: 7440-21-3
silicon

: 10025-78-2
trichlorosilane

Conditions

Conditions	Yield
With CuO-ZnO-In2O3 mesocrystal microspheres Reagent/catalyst;	61.2%
In not given heating of silicon washed with HCl and dried in a stream of HCl at 450-500 °C;;
In not given heating of silicon washed with HCl and dried in a stream of HCl at 450-500 °C;;
at 230 - 260℃;

: 75-79-6
Methyltrichlorosilane

A: 75-54-7
Dichloromethylsilane

B: 10026-04-7, 53609-55-5
tetrachlorosilane

C: 10025-78-2
trichlorosilane

Conditions

Conditions	Yield
With hydrogen; Rh/C at 700℃; Product distribution / selectivity;	A 5.5% B 28.2% C 22.9%

...Expand

: 10026-04-7, 53609-55-5
tetrachlorosilane

: 1333-74-0
hydrogen

: 7440-21-3
silicon

: 10025-78-2
trichlorosilane

Conditions

Conditions	Yield
copper(l) chloride at 525℃; Product distribution / selectivity;	6.14%
at 525℃; Product distribution / selectivity;	4.6%
at 500℃; under 22502.3 Torr; Product distribution / selectivity; Industry scale;

...Expand

: 26198-63-0, 78-87-5
1,2-Dichloropropane

nitrogen: nitrogen

copper containing silicon: copper containing silicon

A: 10026-04-7, 53609-55-5
tetrachlorosilane

B: 107-37-9
allyltrichlorosilane

C: 18171-37-4
1,2-bis-trichlorosilanyl-propane

D: 10025-78-2
trichlorosilane

Conditions

Conditions	Yield
at 300℃; Produkt 5: 2-Dichlorsilyl-1-trichlorsilyl-propan;

...Expand

: 67-66-3
chloroform

silicon-copper: silicon-copper

A: 10026-04-7, 53609-55-5
tetrachlorosilane

B: 4142-85-2
1,1,1,3,3,3-hexachloro-1,3-disilapropane

C: 4775-56-8
tris(trichlorosilyl)methane

D: 10025-78-2
trichlorosilane

Conditions

Conditions	Yield
at 300℃;

...Expand

: 7647-01-0
hydrogenchloride

: 10026-04-7, 53609-55-5
tetrachlorosilane

: 1333-74-0
hydrogen

: 7440-21-3
silicon

: 10025-78-2
trichlorosilane

Conditions

Conditions	Yield
copper(l) chloride at 300℃; Product distribution / selectivity;

...Expand

: 82146-27-8
dibromochlorosilane

: 1631-73-8
trimethylstannane

A: 7789-57-3
tribromosilane

B: 21479-75-4
SiClBrH2

C: 82146-25-6
SiCl2HBr

D: 10025-78-2
trichlorosilane

E: 7440-21-3
monosilane

Conditions

Conditions	Yield
In neat (no solvent) condensing of equimolar amts. of tinhydride and SiClHBr2 (trace of SiCl2HBr present) into cold finger, reaction at room temp. (30 min); further products; not isolated; IR spectroscopy;

...Expand

: 7647-01-0
hydrogenchloride

: 67-66-3
chloroform

: 7440-21-3
silicon

A: 10026-04-7, 53609-55-5
tetrachlorosilane

B: 10025-78-2
trichlorosilane

Conditions

Conditions	Yield
With methylene chloride; cadmium; copper mixing of Cu and Si; drying (300°C, 5 h, dry nitrogen), rising temp. to 350°C, addn. of MeCl (4 h), removal of MeSiCl3 and Me2SiCl2, Cd addn. at room temp., rising temp. to 300°C, CHCl3 and HCl addn., 40 h; product collection, distn., receiver cooled to -20.degree, dist. of remains in flask,;

...Expand

: 7647-01-0
hydrogenchloride

: 7440-21-3
silicon

A: 10026-04-7, 53609-55-5
tetrachlorosilane

B: 10025-78-2
trichlorosilane

Conditions

Conditions	Yield
In solid Kinetics; gas-solid react.; temp. 200 - 600°C; not isolated; detn. by DSC, XRD;
In gas Kinetics; (H2) reacted at pressure 9.0E+4 Pa, and at temp. 623, 673, or 723 K, Q=300 sccm and concd. HCl=1.0, 3.3, 10 vol %;
In neat (no solvent) dried HCl is used; glowing heat;; product mixture obtained;;

...Expand

: 10026-04-7, 53609-55-5
tetrachlorosilane

: 1631-73-8
trimethylstannane

A: 10025-78-2
trichlorosilane

B: 1066-45-1
trimethyltin(IV)chloride

C: 7440-21-3
monosilane

D: 4109-96-0
Dichlorosilane

Conditions

Conditions	Yield
In neat (no solvent) inert atmosphere (N2, Ar or high vac.), room temperature, equimolar amts. of halosilane/tinhydride, reactn. time 36 h; not isolated; IR spectroscopy (identified 25-30% SiCl3H, 15% SiCl2H2 and 10% SiH4 in product mixt.);

...Expand

: 1631-73-8
trimethylstannane

: 13465-74-2
bromo trichloro silane

A: 10026-04-7, 53609-55-5
tetrachlorosilane

B: 10025-78-2
trichlorosilane

C: 7440-21-3
monosilane

Conditions

Conditions	Yield
In neat (no solvent) inert atmosphere (N2, Ar or high vac.), room temperature, equimolar amts. of halosilane/tinhydride, reactn. time 3 h; not isolated; IR spectroscopy (identified 85% SiCl3H, 5% SiH4 and 5% SiCl4 in product mixt.);

...Expand

: 1631-73-8
trimethylstannane

: 13465-75-3
dibromo dichlorosilane

A: 82146-25-6
SiCl2HBr

B: 10025-78-2
trichlorosilane

C: 1066-44-0
trimethyltin bromide

D: 7440-21-3
monosilane

Conditions

Conditions	Yield
In neat (no solvent) inert atmosphere (N2, Ar or high vac.), room temperature, two equiv. of tinhydride, reactn. time 2 h; not isolated; IR spectroscopy (identified 35-40% SiCl3H, 40% SiH4 and 10% SiCl2HBr in product mixt.);

...Expand

: 7789-78-8
calcium hydride

: 10026-04-7, 53609-55-5
tetrachlorosilane

A: 10025-78-2
trichlorosilane

B: 13966-57-9
chlorosilane

C: 4109-96-0
Dichlorosilane

Conditions

Conditions	Yield
In neat (no solvent) byproducts: H2, HCl; passing SiCl4 vapor over CaH2 below red heat;;	A n/a B 0% C 0%
In neat (no solvent) byproducts: H2, HCl; passing SiCl4 vapor over CaH2 below red heat;;	A n/a B 0% C 0%

...Expand

: 10025-85-1
nitrogen trichloride

: 7440-21-3
monosilane

A: 10025-78-2
trichlorosilane

B: 13966-57-9
chlorosilane

Conditions

Conditions	Yield
In gaseous matrix byproducts: HCl, H2; Ar carrier gas, room temp., static vac. glass reactor with quartz window (reaction mixt. made up in reactor); manometric monitoring, chemiluminescence spectroscopy;

...Expand

: 10026-04-7, 53609-55-5
tetrachlorosilane

: 10025-78-2
trichlorosilane

Conditions

Conditions	Yield
With Cu; H2S In neat (no solvent) byproducts: Cu sulfide, H2O; passing H2S through a mixture SiCl4 and Cu powder on boiling;;	0%
With H2 In neat (no solvent) reaction at glowing heat;;
With Zn; HCl In neat (no solvent) byproducts: H2; heating of SiCl4 with Zn powder in a HCl stream up to boiling;;
With hydrogen; silica gel; zinc In water at 450℃; for 48h;
With hydrogen; copper at 750℃; for 1h;

: 10026-04-7, 53609-55-5
tetrachlorosilane

: 7440-21-3
monosilane

A: 10025-78-2
trichlorosilane

B: 13966-57-9
chlorosilane

C: 4109-96-0
Dichlorosilane

Conditions

Conditions	Yield
In gas reactor temp.: 250 - 500°C; detn. by gas chromy.;

...Expand

: 10026-04-7, 53609-55-5
tetrachlorosilane

: 7783-06-4
hydrogen sulfide

: 10025-78-2
trichlorosilane

Conditions

Conditions	Yield
With Cu In neat (no solvent) byproducts: H2; treatment of the mixture in a liquid air cooled bomb tube;;	0%

: 7647-01-0
hydrogenchloride

: 10026-04-7, 53609-55-5
tetrachlorosilane

: 10025-78-2
trichlorosilane

Conditions

Conditions	Yield
With Zn In neat (no solvent) byproducts: H2; heating of SiCl4 with Zn and liquid HCl in a sealed tube at 100 °C;;	0%

: 10026-04-7, 53609-55-5
tetrachlorosilane

: 1333-74-0
hydrogen

A: 7647-01-0
hydrogenchloride

B: 10025-78-2
trichlorosilane

C: 7440-21-3
silicon

Conditions

Conditions	Yield
byproducts: HCl; equil. reaction, at 1170-1540 K;

...Expand

: 10026-04-7, 53609-55-5
tetrachlorosilane

: 1333-74-0
hydrogen

A: 7446-70-0
aluminium trichloride

B: 10025-78-2
trichlorosilane

C: 4109-96-0
Dichlorosilane

Conditions

Conditions	Yield
With aluminium In neat (no solvent) byproducts: SiCl4; reaction by passing SiCl4 vapor with H2 (1:1) over Al at 400 °C;; distn.;;
With Al In neat (no solvent) byproducts: SiCl4; reaction by passing SiCl4 vapor with H2 (1:1) over Al at 400 °C;; distn.;;

...Expand

: 10026-04-7, 53609-55-5
tetrachlorosilane

: 1333-74-0
hydrogen

A: 10025-78-2
trichlorosilane

B: 4109-96-0
Dichlorosilane

Conditions

Conditions	Yield
With co-catalyst: pyrimidine or P(OPh)3; tri-n-butyl-tin hydride In toluene absence of air; H2-stream; further alternate co-catalysts: PCy3 or PBu3 or N-methylimidazole or pyridine or chinoline; gas chromy.;
tri-n-butyl-tin hydride In acetonitrile absence of air; H2-stream; gas chromy.;
With Al or Mg or Zn In neat (no solvent, gas phase) passing SiCl4 vapor and H2 over granulated Al, Mg or Zn at 350-450 °C;; condensation of the gaseous reaction product by dry ice, separation of the mixture by fractionation;;
With Al or Mg or Zn In gas passing SiCl4 vapor and H2 over granulated Al, Mg or Zn at 350-450 °C;; condensation of the gaseous reaction product by dry ice, separation of the mixture by fractionation;;

...Expand

: 10025-78-2
trichlorosilane

: 5-((4-dodec-11-en-1-yl)phenyl)-5’-(4-hexylphenyl)-2,2’-bithiophene

: trichloro(12-(4-(5’-(4-hexylphenyl)-[2,2’-bithiophen]-5-yl)phenyl)dodecyl)silane

Conditions

Conditions	Yield
With platinum(0)-1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex In toluene at 90℃; Glovebox; Sealed tube;	100%

: 100-43-6
4-vinylpyridine

: 10025-78-2
trichlorosilane

: 1154061-81-0
trichloro(hydrido)bis(4-vinylpyridine)silicon

Conditions

Conditions	Yield
In toluene at -78 - 20℃;	99.5%

: 111-67-1
2-octene

: 10025-78-2
trichlorosilane

: 18225-07-5
(n-hep-1-me)SiCl3

Conditions

Conditions	Yield
In not given HSiCl3 and 2-octene at 50-60°C with peroxide;;	99%

: 111-66-0
oct-1-ene

: 10025-78-2
trichlorosilane

: 5283-66-9
octyltrichlorosilane

Conditions

Conditions	Yield
In not given HSiCl3 and 1-octene at about 55°C with diacetylperoxide;;	99%
In neat (no solvent) HSiCl3 and 1-octene at 150°C in presence of Cu;;
In neat (no solvent) HSiCl3 and 1-octene at 300°C under pressure;;
In neat (no solvent) HSiCl3 and 1-octene at 300°C under pressure;;

: 30620-32-7
1.2-CH2CHCH2-1.2-C2B10H10

: 10025-78-2
trichlorosilane

: 888501-94-8
1,2-[(CH2)3SiCl3]2-1,2-C2B10H10

Conditions

Conditions	Yield
With catalyst:Karstedt platinum catalyst (3-3.5percent Pt) In neat (no solvent) (Ar); stirred for 2 h at room temp.; evapd., obtained as oil;	99%

: 939-23-1
p-phenylpyridine

: 10025-78-2
trichlorosilane

: 1154061-84-3
trichloro(hydrido)bis(4-phenylpyridine)silicon

Conditions

Conditions	Yield
In toluene at -78 - 20℃;	99%

: 110-86-1
pyridine

: 10025-78-2
trichlorosilane

: 17748-48-0, 38685-10-8
trichloro(hydrido)bis(pyridine)silicon

Conditions

Conditions	Yield
In toluene at -78 - 20℃;	98.8%

: 1421683-29-5
C5H10Cl4N2Si

: 10025-78-2
trichlorosilane

: 1610766-37-4
C5H12Cl2N2Si

Conditions

Conditions	Yield
In tetrahydrofuran at 20℃; for 12h; Inert atmosphere; Schlenk technique;	98%

: 1122-58-3
dmap

: 10025-78-2
trichlorosilane

: 1154061-83-2
trichlorobis[4-(dimethylamino)pyridine](hydrido)silicon

Conditions

Conditions	Yield
In tetrahydrofuran at -78 - 20℃;	97.4%

: 1355962-66-1
[(1',1'-diallyloxycarbonyl)-1,2-methano]-1,2-dihydro-C60-fullerene

: 10025-78-2
trichlorosilane

: 1443224-20-1
TSMC

Conditions

Conditions	Yield
With dicyclopentadienyl platinum dichloride In toluene at 70℃; for 24h; Inert atmosphere; Schlenk technique;	97%

: 10025-78-2
trichlorosilane

: 7440-21-3
silicon

Conditions

Conditions	Yield
Stage #1: trichlorosilane under 3.75038 Torr; for 6h; Pulsed microwave radiation (25-50W); Stage #2: With hydrogen at 900℃;	96.7%
With hydrogen chemical vapor deposition (8% SiHCl3 in H2, 1100°C);
With hydrogen chemical vapor deposition (hot-wall reactor, basic pressure 10 or 76 Torr, 1223 K);

: 108-89-4
picoline

: 10025-78-2
trichlorosilane

: 1154061-79-6
trichloro(hydrido)bis(4-methylpyridine)silicon

Conditions

Conditions	Yield
In toluene at -78 - 20℃;	96.3%

: 3978-81-2
4-tert-butylpyridine

: 10025-78-2
trichlorosilane

: 1154061-82-1
bis(4-tert-butylpyridine)trichloro(hydrido)silicon

Conditions

Conditions	Yield
In toluene at -78 - 20℃;	96.1%

: 10025-78-2
trichlorosilane

: 108-95-2
phenol

: 3898-65-5
triphenoxysilane

Conditions

Conditions	Yield
at 50℃; for 4h;	96%

: 96-05-9
allyl methacrylate

: 10025-78-2
trichlorosilane

: 7351-61-3
3-(trichlorosilyl)propyl 2-methylprop-2-enoate

Conditions

Conditions	Yield
With platinum(0)-1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex In toluene at 70℃; for 3h;	96%

: 10025-78-2
trichlorosilane

: 1333-74-0
hydrogen

: 7440-21-3
monosilane

Conditions

Conditions	Yield
With titanium tetrachloride In melt melting NaCl, KCl and AlCl3 at ca. 150°C, heating to ca. 300°C, addn. of TiCl4 and Al under H2 within 2 h, addn. of more Al at 230°C, then addn. of SiHCl3 under H2 with stirring within 1 h; sepn. of the chlorosilane/silane mixture by fractional condensation and rectification;	96%

: 157072-60-1, 61521-25-3, 166941-05-5, 16971-33-8
(carbonyl)(chloro)(hydrido)tris(triphenylphosphine)ruthenium(II)

: 10025-78-2
trichlorosilane

: Ru(SiCl3)Cl(CO)(P(C6H5)3)2

Conditions

Conditions	Yield
In toluene at 60℃; for 0.333333h; Inert atmosphere; Schlenk technique;	96%

KRYTOX allyl ether KDP-4599: KRYTOX allyl ether KDP-4599

: 10025-78-2
trichlorosilane

KRYTOX 3-trichlorosilylpropyl KDP-4599: KRYTOX 3-trichlorosilylpropyl KDP-4599

Conditions

Conditions	Yield
dihydrogen hexachloroplatinate at 165℃; for 6h;	95%
dihydrogen hexachloroplatinate at 175℃; for 8h;	95%

: 14285-68-8
decacarbonyldirhenium(0)

: 10025-78-2
trichlorosilane

: Re(CO)5(SiCl3)

Conditions

Conditions	Yield
In hexane under N2; Re2(CO)10 and the silane in hexane was pressurized with CO (70 atm., autoklave), heated at 200°C for 16 h; cooled, gases were vented, washed with hexane, dried with a stream of N2, sublimation;	95%

: 10025-78-2
trichlorosilane

: 879-05-0
2,3,4,5,6-pentafluorophenylmagnesium bromide

: 20160-40-1
tris(pentafluorophenyl)silane

Conditions

Conditions	Yield
In diethyl ether reaction at -12°C (1hour) and heating under reflux for 12 hours;;	95%
In diethyl ether reaction at -12°C (1hour) and heating under reflux for 12 hours;;	95%

: 15243-33-1
dodecacarbonyl-triangulo-triruthenium

: 10025-78-2
trichlorosilane

: 36570-60-2
cis-Ru(CO)4(SiCl3)2

Conditions

Conditions	Yield
In hexane byproducts: CO; Irradiation (UV/VIS); in a closed quartz tube filled with CO gas (2 atm) irradiation during 3d with stirring; cooling at -78°C, 2h, drying the crystals in vac., sublimation at 40°C, 0.02 Torr onto a probe cooled to -78°C;	95%

: 10025-78-2
trichlorosilane

: 7732-18-5
water

: hidrogen-silsesquioxane

Conditions

Conditions	Yield
In water addn. of water to silicon compd. at -78°C with stirring; filtration, washing ppt. with water, drying in vac. at 85°C overnight;	95%
In diethyl ether cooling (ice), stirring (1 d, room temp.); filtn., washing, drying (vac. 1E-3 mbar, 2 d, 80°C);

: 57158-83-5
bis(ethylene)(tricyclohexylphosphine)platinum

: 10025-78-2
trichlorosilane

: [(Pt(μ-H)(SiCl3)[P(C6H11)3])2] * toluene

Conditions

Conditions	Yield
In toluene N2-atmosphere; condensing of excess silane into soln. of Pt-complex (-196°C), warming to room temp. (pptn.); filtration, washing (hexane), drying (vac.); elem. anal.;	95%

: 536-75-4
4-Ethylpyridine

: 10025-78-2
trichlorosilane

: 1154061-80-9
trichlorobis(4-ethylpyridine)(hydrido)silicon

Conditions

Conditions	Yield
In toluene at -78 - 20℃;	95%

: 112-88-9
octadec-1-ene

: 10025-78-2
trichlorosilane

: 112-04-9
octadecyltrichlorosilane

Conditions

Conditions	Yield
In neat (no solvent) HSiCl3 and 1-octadecene at about 300°C under pressure;;	94%
In neat (no solvent) HSiCl3 and octadecene at 300°C under pressure;;	94%
In neat (no solvent) HSiCl3 and 1-octadecene at about 300°C under pressure;;	94%
In neat (no solvent) HSiCl3 and octadecene at 300°C under pressure;;	94%
With SiliaCat Pt(0) - mesoporous organosilica microspheres doped with Pt nanoparticles In neat (no solvent) at 65℃; for 1h;	87 %Spectr.

: 129134-01-6
chloro-carbonyl-hydrido-bis(triphenylphosphine)osmium

: 10025-78-2
trichlorosilane

: 129133-98-8
OsCl(triphenylphosphine)2(CO)(trichlorosilyl)

Conditions

Conditions	Yield
In toluene N2-atmosphere; addn. of excess HSiCl3 to soln. of Os-complex, stirring for 20 min at 60°C; concn., crystn. on addn. of hexane;	94%

: 56800-92-1
[Os(κ2-dimethyldithiocarbamate)H(CO)(PPh3)2]

: 10025-78-2
trichlorosilane

: 895138-95-1
[Os(κ2-dimethyldithiocarbamate)(SiCl3)(CO)(PPh3)2]

Conditions

Conditions	Yield
In toluene toluene and HSiCl3 were added to Os complex in Schlenk tube; sealed; cooled in liq. N2; evacuated; warmed to ambient temp.; heated at 100°C for 12 h; cooled; concd. (vac.); hexane added; filtered; recrystd. (CH2Cl2/hexane); elem. anal.;	94%

: 114674-46-3
(η5-cyclopentadienyl)methylbis(methyldiphenylphosphine)ruthenium

: 10025-78-2
trichlorosilane

: 475635-32-6
Cp(PMePh2)2RuSiCl3

Conditions

Conditions	Yield
In further solvent(s) byproducts: CH4; (Ar); mixing ruthenium complex with HSiCl3, freezing with liq. N2, swarming to room temp., sealing, heating at 100°C for 16 h, cooling toroom temp.; evapn., dissolving in CH2Cl2, filtration through glass wool, addn. of hexanes, concn., filtration, drying; elem. anal.;	92%

: 292638-84-7
styrene

: 10025-78-2
trichlorosilane

: 940-41-0
1-phenyl-2-(trichlorosilyl)ethane

Conditions

Conditions	Yield
Stage #1: trichlorosilane; C17H36N2OPtSi2 for 0.0833333h; Inert atmosphere; Cooling with water bath; Stage #2: styrene at 16℃; for 7h; Product distribution / selectivity; Inert atmosphere;	92%
C17H36N2OPtSi2 In dodecane for 7h; Product distribution / selectivity; Inert atmosphere;

: 10025-78-2
trichlorosilane

: 67206-59-1
sodium dioctylphosphinate

: 7539-86-8
dioctylphosphinyl chloride

Conditions

Conditions	Yield
In chloroform at 80℃; for 16h;	91.5%

Trichlorosilane Consensus Reports

Reported in EPA TSCA Inventory.

Trichlorosilane Standards and Recommendations

DOT Classification: 4.3; Label: Dangerous When Wet, Flammable Liquid, Corrosive

Trichlorosilane Specification

1. Introduction of Trichlorosilane

The Trichlorosilane belongs to product categories of Reduction; Si (Classes of Silicon Compounds); Si-Cl Compounds; Si-H Compounds; Silicon Compounds (for Synthesis); Synthetic Organic Chemistry; Trichlorosilanes; Chloro Silanes; POSS Precursors and Intermediates; Protecting and Derivatizing Reagents; RSiCl₃Protection and Derivatization; Silicon-Based; Silsesquioxanes: POSS Nanohybrids. This chemical is a clear liquid and should be stored in a ventilated, cool and dry place. Besides, it is the basic ingredient used in the production of purified polysilicons.

2. Properties of Trichlorosilane

Physical properties about Trichlorosilane are: (1)ACD/LogP: 4.77; (2)ACD/LogD (pH 5.5): 4.77; (3)ACD/LogD (pH 7.4): 4.77; (4)ACD/BCF (pH 5.5): 2501.35; (5)ACD/BCF (pH 7.4): 2501.35; (6)Enthalpy of Vaporization: 26.57 kJ/mol; (7)Boiling Point: 31.8 °C at 760 mmHg; (8)Vapour Pressure: 596 mmHg at 25 °C.

3. Structure Descriptors of Trichlorosilane

You could convert the following datas into the molecular structure:
1). Canonical SMILES: [Si](Cl)(Cl)Cl
2). InChI: InChI=1S/Cl3Si/c1-4(2)3
3). InChIKey: PPDADIYYMSXQJK-UHFFFAOYSA-N

4. Toxicity of Trichlorosilane

Organism	Test Type	Route	Reported Dose (Normalized Dose)	Effect	Source
mammal (species unspecified)	LC50	inhalation	1gm/m³ (1000mg/m³)	LUNGS, THORAX, OR RESPIRATION: ACUTE PULMONARY EDEMA LIVER: FATTY LIVER DEGERATION BLOOD: OTHER CHANGES	Toksikologiya Novykh Promyshlennykh Khimicheskikh Veshchestv. Toxicology of New Industrial Chemical Substances. For English translation, see TNICS*. Vol. 3, Pg. 81, 1961.
mouse	LC50	inhalation	1500mg/m³/2H (1500mg/m³)		"Toxicometric Parameters of Industrial Toxic Chemicals Under Single Exposure," Izmerov, N.F., et al., Moscow, Centre of International Projects, GKNT, 1982Vol. -, Pg. 114, 1982.
rat	LCLo	inhalation	500ppm/4H (500ppm)		Union Carbide Data Sheet. Vol. 2/21/1979,
rat	LD50	oral	1030mg/kg (1030mg/kg)		Journal of Industrial Hygiene and Toxicology. Vol. 31, Pg. 60, 1949.

5. Safety Information of Trichlorosilane

When you are using this chemical, please be cautious about it. As a chemical, it is spontaneously flammable in air and causes severe burns. It is also harmful by inhalation and if swallowed. Besides, it reacts violently with water and liberates toxic gas. During using it, wear suitable protective clothing, gloves and eye/face protection. Keep container tightly closed and in a well-ventilated place away from sources of ignition. In case of contact with eyes, rinse immediately with plenty of water and seek medical advice. If accident happens or you feel unwell seek medical advice immediately.

6. Preparation of Trichlorosilane

Preparation of Trichlorosilane: it is prepared by blowing hydrogen chloride through a bed of silicon powder at 300°C. The yield is about 80-90%. What's more, the reaction produces byproducts of silicon tetrachloride (chemical formula SiCl₄), hexachlorodisilane (Si₂Cl₆), and dichlorosilane (H₂SiCl₂), which can be separated by distillation.

Si+3HCl→HSiCl₃+H₂

Product Name

Trichlorosilane

Synthetic route

Trichlorosilane Consensus Reports

Trichlorosilane Standards and Recommendations

Trichlorosilane Specification

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