Triethylgallium supplier | CasNO.1115-99-7

Name
TRIETHYLGALLIUM
EINECS 214-232-7
CAS No. 1115-99-7
Article Data33
CAS DataBase
Density 1.058 g/cm³
Solubility
Melting Point -82.3 °C
Formula C₆H₁₅Ga
Boiling Point 143 °C
Molecular Weight 156.908
Flash Point -18 °C
Transport Information UN 3203
Appearance
Safety 16-36/37/39-43
Risk Codes 14/15-17
Molecular Structure
Hazard Symbols F,C
Synonyms Triethylgallane;
PSA 0.00000
LogP 2.54090

Synthetic route

: (CH2)3(P(C6H5)2Ga(C2H5)3)2

: 1115-99-7
triethyl gallium

Conditions

Conditions	Yield
In neat (no solvent) metal complex decomposed at 120-143°C for 2-3 h;	93%

: gallium(III) trichloride

: 97-93-8
triethylaluminum

: 1115-99-7
triethyl gallium

Conditions

Conditions	Yield
Stage #1: triethylaluminum With tri-n-propylamine at 20℃; Stage #2: gallium(III) trichloride at 100℃; for 2h; Neat (no solvent);	92%
In hexane at 70℃; Glovebox; Inert atmosphere;

: (CH2)5(P(C6H5)2Ga(C2H5)3)2

: 1115-99-7
triethyl gallium

Conditions

Conditions	Yield
In neat (no solvent) metal complex decomposed at 120-143°C for 2-3 h;	92%

: (triphenylphosphine)triethylgallium

: 1115-99-7
triethyl gallium

Conditions

Conditions	Yield
In neat (no solvent) metal complex decomposed at 120-125°C for 2-3 h;	90%

: gallium(III) trichloride

: sesquiethylaluminum chloride dimer

A: 1115-99-7
triethyl gallium

B: 30914-08-0
diethylgallium chloride

Conditions

Conditions	Yield
With potassium chloride; sodium chloride at 120 - 130℃; under 225.023 Torr; Pressure; Concentration; Temperature; Inert atmosphere;	A 75.9% B n/a
With potassium chloride; sodium chloride at 120℃; under 225.023 Torr; Inert atmosphere;	A 75.9% B 19%

...Expand

: (Et3Ga)2*diphos

: 1115-99-7
triethyl gallium

Conditions

Conditions	Yield
In neat (no solvent) heated slowly under 1E-2 mmHg in a trap-to-trap distillation apparatus (receiver flask at -196 °C), liberation of Et3Ga started at 80 °C, the rate was more satisfactory at 120-125 °C;;	66%

: 7440-55-3
gallium

: 7439-95-4
magnesium

: 75-03-6
ethyl iodide

A: 1115-99-7
triethyl gallium

B: 7786-30-3
magnesium chloride

Conditions

Conditions	Yield
In hexane inert condition; addn. of hexane to mixt. of Mg and Ga (vac.), addn. of hexane, dropwise addn. of EtI (boiling hexane); distillation;	A 65% B n/a

...Expand

: 7440-55-3
gallium

: 7553-56-2
iodine

: 7439-95-4
magnesium

: 75-03-6
ethyl iodide

A: 1115-99-7
triethyl gallium

B: 7786-30-3
magnesium chloride

Conditions

Conditions	Yield
In neat (no solvent) inert condition; addn. of I2 to mixt. of Mg and Ga, heating in vac. (150°C), chilling, addn. of EtI (50 - 70°C, 1 h), heating (90 °C, 4 h); distillation;	A 61% B n/a

...Expand

Ga(35),Mg(65) (X%): Ga(35),Mg(65) (X%)

: 7553-56-2
iodine

: 75-03-6
ethyl iodide

A: 1115-99-7
triethyl gallium

B: 7786-30-3
magnesium chloride

Conditions

Conditions	Yield
In neat (no solvent) inert condition; addn. of I2 to alloy Mg-Ga, heating in vac. (150 °C), chilling, addn. of EtI), heating (85°C, 4 h); distillation;	A 57% B n/a

...Expand

Ga(35),Mg(65) (X%): Ga(35),Mg(65) (X%)

: 75-03-6
ethyl iodide

: 1115-99-7
triethyl gallium

Conditions

Conditions	Yield
With iodine; magnesium In neat (no solvent) byproducts: MgI2; inert atm.; heating (85°C); distn.;	57%

: 851961-39-2
1,3,5-tris(3,3-dimethyl-1-butynyl)benzene

: 93481-56-2
diethylgallium hydride

A: (C2H5)3Ga3(C6H3(CCHC(CH3)3)3)2

B: 1115-99-7
triethyl gallium

Conditions

Conditions	Yield
In hexane under Ar; soln. of Et2GaH in n-hexane added to soln. of C6H3(C2CMe3)3 inn-hexane at room temp.; heated under reflux for 16 h; filtered; filtrate concd. under vac. at room temp.; ppt. collected;	A 44% B n/a

...Expand

: 97-93-8
triethylaluminum

: 1115-99-7
triethyl gallium

Conditions

Conditions	Yield
With gallium(III) trichloride; sodium chloride

: 627-44-1
diethylmercury

: 1115-99-7
triethyl gallium

Conditions

Conditions	Yield
With gallium at 165℃;

: 627-44-1
diethylmercury

gallium: gallium

nitrogen: nitrogen

: 1115-99-7
triethyl gallium

Conditions

Conditions	Yield
at 165℃;

...Expand

: 97-94-9
triethyl borane

: 1115-99-7
triethyl gallium

Conditions

Conditions	Yield
With gallium(III) trichloride at 50 - 100℃; for 1 - 3h; Heating / reflux;

: 7440-55-3
gallium

: 75-03-6
ethyl iodide

: 1115-99-7
triethyl gallium

Conditions

Conditions	Yield
With iodine; magnesium In hexane byproducts: MgI2; inert atm.; boiling; distn.;
With magnesium In neat (no solvent) byproducts: MgI2; inert atm.; heating (90°C, 4 h); distn.;

: 7440-55-3
gallium

: 627-44-1
diethylmercury

: 1115-99-7
triethyl gallium

: 230310-74-4
Et2Ga(NH[C6H2(2,4,6-t-Bu)3])

A: (EtGaNH[C6H2(4,6-t-Bu)2CMe2CH2-2])2

B: 1115-99-7
triethyl gallium

Conditions

Conditions	Yield
In neat (no solvent) byproducts: H2N[C6H2(t-Bu)3]; Ar-atmosphere; heating at 65°C for 12 h; distillation off of GaEt3 (vac., room temp.), sublimation off of amine, recrystn. (pentane); elem. anal.;

: 74-96-4
ethyl bromide

: 13450-90-3
Gallium trichloride

: 1115-99-7
triethyl gallium

Conditions

Conditions	Yield
With Mg In diethyl ether (N2), EtBr added dropwise to mixt. of Mg and abs.Et2O, boiled under stirring for 2 h, treated dropwise with GaCl3 in Et2O, boiled under stirringfor 1 h; evapd. at 45°C, condensed into liquid N2, separated (refluxer), recruficated;

: (C6H3-2,6-(C6H2-2,4,6-(CH3)3)2)2Sn(Et)GaEt2

A: 188685-27-0
Sn(C6H3-2,6-(C6H2-2,4,6-(CH3)3)2)2

B: 1115-99-7
triethyl gallium

Conditions

Conditions	Yield
In toluene at 20℃;

: 10467-10-4
ethylmagnesium iodide

: gallium(III) iodide

: 1115-99-7
triethyl gallium

Conditions

Conditions	Yield
In diethyl ether

: 74-96-4
ethyl bromide

: gallium(III) fluoride

: 1115-99-7
triethyl gallium

Conditions

Conditions	Yield
Stage #1: ethyl bromide With magnesium Stage #2: gallium(III) fluoride In diethyl ether for 48h; Reflux;

: 85824-61-9
triisopropylbismuthine

: 1115-99-7
triethyl gallium

: ((CH3)2CH)3BiGa(C2H5)3

Conditions

Conditions	Yield
In neat (no solvent) all manipulations under N2 atm.; mixed equimolar amts. of Ga and Bi compds. at ambient temp.; elem. anal.;	100%

: 1115-99-7
triethyl gallium

: 4669-92-5
tetraethyldistibine

: [Et4Sb2][GaEt3]2

Conditions

Conditions	Yield
In neat (no solvent) under N2 atm. react. Et3Ga and Et4Sb2; elem. anal.;	100%

: all-cis-1,3,5-triethynyl-1,3,5-trimethyl-1,3,5-trisilacyclohexane

: 1115-99-7
triethyl gallium

: 1,3,5-tris(diethylgallanylethynyl)-1,3,5-trimethyl-1,3,5-trisilacyclohexane

Conditions

Conditions	Yield
In neat (no solvent) at 20℃; for 24h; Temperature; Schlenk technique; Inert atmosphere;	100%

: tris[(ethynyl)dimethylsilyl](trimethylsilyl)methane

: 1115-99-7
triethyl gallium

: tris[(diethylgallanylethynyl)dimethylsilyl](trimethylsilyl)methane

Conditions

Conditions	Yield
In neat (no solvent) at 20℃; for 24h;	100%

: 1295-35-8
bis(1,5-cyclooctadiene)nickel (0)

: 97-93-8
triethylaluminum

: 1115-99-7
triethyl gallium

NiAl#dotGa: NiAl#dotGa

Conditions

Conditions	Yield
With hydrogen In toluene High Pressure; a solns. mixed under inert atm., stirred at 130°C for 16 h under H2 pressure (5 MPa), solvent removed, ppt. dried (high vac.), hydrogenated for 24 h at 390°C; elem. anal.;	99.7%

...Expand

: 13450-90-3
Gallium trichloride

: 1115-99-7
triethyl gallium

: 30914-08-0
diethylgallium chloride

Conditions

Conditions	Yield
In pentane Ar-atmosphere; GaEt3:GaCl3 2:1 molar ratio; evapn. (0°C), distillation (60°C, ;	99%
2/1 comproportionation of Et3Ga and CaCl3;

: 555-75-9
aluminum ethoxide

: 1115-99-7
triethyl gallium

: 108-88-3
toluene

: [Al((μ-OEt)2GaEt2)3]

Conditions

Conditions	Yield
In toluene inert atmosphere; GaEt3 addn. to susp. of Al-ethoxide (3:2 molar ratio);reflux (4 h); cooling; filtration; filtrate evapn. (vac.); elem. anal.;	98%

...Expand

: 1115-99-7
triethyl gallium

: 338963-61-4
(2-pyridylmethyl)(tert-butyldimethylsilyl)amine

: [(2-pyridylmethyl)(tert-butyldimethylsilyl)amino]triethylgallane

Conditions

Conditions	Yield
In toluene All manipulations under Ar atm.; soln. of org. compd. added dropwise at 0°C to soln. of GaEt3, stirred at room temp. for 12 h; solvent removed. at room temp. in vac.; elem. anal.;	98%

: [(calix[4]arene monomethyl ether)nitridomolybdenum(VI)]-diethyl ether (1:1.5)

: 1115-99-7
triethyl gallium

: 869318-27-4
[(calix[4]arene monomethyl ether)(triethyl(nitrido)gallium(III))molybdenum(VI)]

Conditions

Conditions	Yield
In toluene N2, a soln. of Ga compd. (0.52 equiv.) slowly added to a soln. of Mo compd. (0.52 equiv.) at room temp., stirred for 1 h; solvent removed (vac.); elem. anal.;	98%

: 5966-51-8
1,3-bis-(dimethylamino)propan-2-ol

: 1115-99-7
triethyl gallium

: 811786-06-8
[(C2H5)2Ga(OCH(CH2N(CH3)2)2)]2

Conditions

Conditions	Yield
In dichloromethane (N2); using Schlenk techniques; addn. dropwise of HOCH(CH2NMe2)2 (1 equiv.) to soln. of Et3Ga (1 equiv.) in CH2Cl2 at -78°C with stirringfor 0.5 h; slow warming to room temp., stirring for 5 h; removal of solvent in vac., redissolving in toluene and cooling to -20°C; crystn. for 2 days; elem. anal.;	98%
In hexane (N2); using Schlenk techniques; treatment of HOCH(CH2NMe2)2 (1 equiv.) with Et3Ga (1 equiv.) in hexane at room temp.;

: 13450-90-3
Gallium trichloride

: 1115-99-7
triethyl gallium

: 6917-79-9
ethylgallium dichloride

Conditions

Conditions	Yield
In pentane Ar-atmosphere; GaEt3:GaCl3 1:2 molar ratio; sublimation (room temp.); elem. anal.;	97.3%

: 3587-64-2
1-Methoxy-2-methylpropan-2-ol

: 1115-99-7
triethyl gallium

: 811786-09-1
((C2H5)2Ga(OC(CH3)2CH2OCH3))2

Conditions

Conditions	Yield
In toluene byproducts: ethane; under N2; ligand added dropwise to soln. of Et3Ga (molar ratio 1:1) in toluene at -78°C with stirring over 0.5 h; warmed slowly to room temp.; stirred for 24 h; solvent removed in vac.; redissolved in toluene; cooled to -20°C;crystd. for several d; elem. anal.;	96%

: 1115-99-7
triethyl gallium

: 42017-07-2
1-heptynyllithium

: 80359-11-1
lithium triethylheptynylgallate

Conditions

Conditions	Yield
In benzene Ar; heated at 60°C; solvent removed (vac., 1 Torr, 50°C); elem. anal.;	95%
In neat (no solvent) Ar; heated at 50°C; elem. anal.;

: 163122-31-4
N,N'-bis(o-hydroxybenzyl)-1,2-diamino-(4,5-dimethyl)benzene

: 1115-99-7
triethyl gallium

: 166542-84-3
((OC6H4CH2N)2C6H2(CH3)2)Ga(C2H5)(Ga(C2H5)2)2

Conditions

Conditions	Yield
In toluene byproducts: CH4; stirring (25°C, 15 min), refluxing (8 h); evapn. (vac.); elem. anal.;	95%

: 1115-99-7
triethyl gallium

: N,N′-bis(3,5-di-t-butylsalicylidene)-ethylenediamine

: 207676-24-2
Ga2(C2H5)4((CH2NCHC6H2(C(CH3)3)2O)2)

Conditions

Conditions	Yield
In toluene stirring (room temp., 24 h); evapn., recrystn. (toluene, -30°C);	95%

: 108-16-7
1-methyl-2-N,N-dimethylaminoethanol

: 1115-99-7
triethyl gallium

: 811786-08-0
[(C2H5)2Ga(OCH(CH3)CH2N(CH3)2)]2

Conditions

Conditions	Yield
In dichloromethane (N2); using Schlenk techniques; addn. dropwise of HOCH(CH3)CH2NMe2 (1 equiv.) to soln. of Et3Ga (1 equiv.) in CH2Cl2 at -78°C with stirring for 0.5 h; slow warming to room temp., stirring for 5 h; removal of solvent in vac., redissolving in toluene and cooling to -20°C; as solid; elem. anal.;	95%
In hexane (N2); using Schlenk techniques; treatment of HOCH(CH3)CH2NMe2 (1 equiv.)with Et3Ga (1 equiv.) in hexane at room temp.;

: 108-01-0
2-(N,N-dimethylamino)ethanol

: 1115-99-7
triethyl gallium

: 552851-83-9
((C2H5)2Ga(OCH2CH2N(CH3)2))2

Conditions

Conditions	Yield
In toluene byproducts: ethane; under N2; ligand added dropwise to soln. of Et3Ga (molar ratio 1:1) in toluene at -78°C with stirring over 0.5 h; warmed slowly to room temp.; stirred for 24 h; solvent removed in vac.; crystd. by standing at room temp. for several d; elem. anal.;	95%

: 1522-22-1
1,1,1,5,5,5-hexafluoroacetylacetone

: 1115-99-7
triethyl gallium

: 203209-46-5
Et2Ga(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)

Conditions

Conditions	Yield
In pentane byproducts: CH4; Ar-atmosphere; stirring (-196°C to room temp., room temp., 12 h); distg. (vac., -20°C), fractional distg.; elem. anal.;	94.9%

: 81183-20-2
tris(trimethylsilyl)bismuthane

: 1115-99-7
triethyl gallium

: (C2H5)3GaBi(Si(CH3)3)3

Conditions

Conditions	Yield
In neat (no solvent) all manipulations under N2 atm.; mixed equimolar amts. of Ga and Bi compds. at ambient temp.; dissolved in pentane and storred at -30°C., elem. anal.;	94%

: 1115-99-7
triethyl gallium

: 89332-24-1
(Di-iso-propylsilandiyl)diphosphan

: [[CH(CH3)2]2Si(PHGa(C2H5)2)2]2

Conditions

Conditions	Yield
In n-heptane byproducts: ethane; (N2), metal complex added to a stirred soln. of ligand in heptane, reacted for 20 min; warmed, crystd. for 3 days at 6°C, elem. anal.;	94%

: 1115-99-7
triethyl gallium

: 338963-61-4
(2-pyridylmethyl)(tert-butyldimethylsilyl)amine

: [(2-pyridylmethyl)di(tert-butylsilyl)amido]diethylgallane

Conditions

Conditions	Yield
In neat (no solvent) byproducts: C2H6; All manipulations under Ar atm.; mixt. of org. compd. and GaEt3 heated at 120°C for 20 h; volatiles removed in vac.; elem. anal.;	94%

: 852471-37-5
(2-pyridylmethyl)di(tert-butylsilyl)amine

: 1115-99-7
triethyl gallium

: [(2-pyridylmethyl)di(tert-butylsilyl)amino]triethylgallane

Conditions

Conditions	Yield
In tetrahydrofuran All manipulations under Ar atm.; GaEt3 added dropwise at 0°C to soln. of org. compd., stirred at room temp. for 12 h; solvent removed at room temp. in vac.; elem. anal.;	94%

: [Li(thf)Sn(2-C5H3N-5-Me)3]

: 1115-99-7
triethyl gallium

: [{LiSn(2-C5H3N-5-Me)3}GaEt3]n

Conditions

Conditions	Yield
In toluene at 20℃; Inert atmosphere;	94%

: [LiPb(2-py6OtBu)3]

: 1115-99-7
triethyl gallium

: [LiGaEt2(2-py6OtBu)2]2

Conditions

Conditions	Yield
In toluene at 20℃; Schlenk technique; Inert atmosphere;	94%

: [Ga(C5H4CH3)3]

: 1115-99-7
triethyl gallium

: [(C2H5)2Ga(C5H4CH3)]

Conditions

Conditions	Yield
In pentane (Ar); standard vac. line technique; soln. of GaEt3 and Ga(C5H4Me)3 in pentane stirred overnight at room temp.; pentane was removed by vac. distn.; residue was vac. distd.; elem. anal.;	93.1%

: 18653-98-0
N,N'-bis(2-hydroxybenzyl)ethylenediamine

: 1115-99-7
triethyl gallium

: ((OC6H4CH2NCH2)2)Ga(C2H5)(Ga(C2H5)2)2

Conditions

Conditions	Yield
In toluene byproducts: CH4; stirring (25°C, 15 min), refluxing (8 h); evapn. (vac.); elem. anal.;	93%

: 2287-28-7
N,N'-bis(2-hydroxybenzyl)-1,3-diaminopropane

: 1115-99-7
triethyl gallium

: 166542-82-1
((OC6H4CH2NCH2)2CH2)Ga(C2H5)(Ga(C2H5)2)2

Conditions

Conditions	Yield
In toluene byproducts: CH4; stirring (25°C, 15 min), refluxing (8 h); evapn. (vac.); elem. anal.;	93%

: 1115-99-7
triethyl gallium

: 338963-61-4
(2-pyridylmethyl)(tert-butyldimethylsilyl)amine

: [(2-pyridylmethyl)(tert-butyldimethylsilyl)amido]diethylgallane

Conditions

Conditions	Yield
In toluene byproducts: C2H6; All manipulations under Ar atm.; mixt. of org. compd. and GaEt3 in toluene refluxed for 20 h; volatiles removed at room temp. in vac.; elem. anal.;	93%

: 109-86-4
2-methoxy-ethanol

: 1115-99-7
triethyl gallium

: 811786-07-9
[(C2H5)2Ga(OCH2CH2OCH3)]2

Conditions

Conditions	Yield
In dichloromethane (N2); using Schlenk techniques; addn. dropwise of HOCH2CH2OMe (1 equiv.)to soln. of Et3Ga (1 equiv.) in CH2Cl2 at -78°C with stirring fo r 0.5 h; slow warming to room temp., stirring for 5 h; removal of solvent in vac., redissolving in toluene and cooling to -20°C; as oil;	93%
In hexane (N2); using Schlenk techniques; treatment of HOCH2CH2OMe (1 equiv.) withEt3Ga (1 equiv.) in hexane at room temp.; as oil;

Triethylgallium Specification

The IUPAC name of this chemical is Triethylgallium. With the CAS registry number 1115-99-7 and EINECS registry number 214-232-7, it is also named as Gallium, triethyl-. In addition, the molecular formula is C₆H₁₅Ga and the molecular weight is 156.91.

Physical properties about this chemical are: (1)Rotatable Bond Count: 3; (2)Exact Mass: 156.042956; (3)MonoIsotopic Mass: 156.042956; (4)Heavy Atom Count: 7; (5)Complexity: 25.7; (6)Covalently-Bonded Unit Count: 1; (7)#Freely Rotating Bonds: 3 .

Uses of Triethylgallium: it is used as chemical reagent, fine chemicals, organic synthesis reagents and pharmaceutical intermediates.And it can react with 2-(2-nitro-vinyl)-furan to get 2-but-1-enyl-furan. This reaction will need reagent hexane. The reaction time is 3 hours with ambient temperature. The yield is about 49%.

Triethylgallium can react with 2-(2-nitro-vinyl)-furan to get 2-but-1-enyl-furan

When you are using this chemical, please be cautious about it as the following:
This chemical is spontaneously flammable in air. And it reacts violently with water, liberating extremely flammable gases. When you are using it, wear suitable protective clothing, gloves and eye/face protection. You should keep away from sources of ignition - No smoking. In case of fire, use ... (indicate in the space the precise type of fire-fighting equipment. If water increases the risk add - Never use water).

You can still convert the following datas into molecular structure:
(1)SMILES: [Ga](CC)(CC)CC
(2)InChI: InChI=1/3C2H5.Ga/c3*1-2;/h3*1H2,2H3;/rC6H15Ga/c1-4-7(5-2)6-3/h4-6H2,1-3H3
(3)InChIKey: RGGPNXQUMRMPRA-KMXMPSPZAO

Product Name

TRIETHYLGALLIUM

Synthetic route

Triethylgallium Specification

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