Plasmid λdv or imm21dv DNA was joined to a λ arm having a cos site. This recombinant plasmid can be packaged in a λ head, and used to infect Escherichia coli K12 cells. The injected DNA molecules become plasmids in cells. By adding these particles to uv-irradiated uvrA cells, the packageable ...

The DnaA protein is essential for initiation of DNA replication in a wide variety of bacterial and plasmid replicons. The replication origin in these replicons invariably contains specific binding sites for the protein, called DnaA boxes. Plasmid P1 contains a set of DnaA boxes at each end of it...

The P1 plasmid partition system depends on ParA–ParB proteins acting on centromere-like parS sites for a faithful plasmid segregation during the Escherichia coli cell cycle. In vivo we placed parS into host E. coli chromosome and on a Sop+ F plasmid and found that the stability of a P1 plasmid ...

Indirect prophage induction is produced by transfer to recipients of u.v.-damaged F plasmid (95 kb). We tested whether the SOS signal can be produced by miniF, a 9.3 kb restriction fragment, coding for the replication and segregation functions of plasmid F. We used λminiF, a hybrid phage-plasmi...

In Escherichia coli, the miniF plasmid CcdB protein is responsible for cell death when its action is not prevented by polypeptide CcdA. We report the isolation, localization, sequencing and properties of a bacterial mutant resistant to the cytotoxic activity of the CcdB protein. This mutation is...

Colicins are usually released from producing cells by so-called lysis proteins. No sequence homologous to the structurally very similar colicin lysis genes was found in the gene cluster cmi cma cbi cba, which determines the activity and immunity proteins of colicin B and M on pColBM-Cl139. Inste...

Borrelia burgdorferi has multiple linear and circular plasmids that are faithfully replicated and partitioned as the bacterium grows and divides. The low copy number of these replicons implies that active partitioning contributes to plasmid stability. Analyzing the requirements for plasmid repli...

N-nitrosodiethanolamine (NDELA) is a carcinogenic, non-volatile nitrosamine that has been shown to pass readily through the skin of animals and humans. It has often been found as a contaminant in cosmetics. Twenty different suntan lotions, available in Israel, both liquids and creams, were analy...

A new analytical method for the determination of N-nitrosodiethanolamine (NDELA), a very harmful compound not allowed in cosmetic products, is presented. The method is based on a new approach of dispersive liquid–liquid microextraction (DLLME) useful for extraction of highly polar compounds, ca...

Films of aluminium nitride (AIN) with thicknesses in the range from 200 to 3600 Å have been deposited at 1050°C by low-pressure MOCVD. Using an alternative precursor, tritertiarybutylaluminium (tBu3Al), and ammonia (NH3), we have grown AlN on sapphire (c-Al2O3). At a growth rate of 0.35 μm/h, ...

Films of aluminum nitride (AlN) with thicknesses in the range from 200 to 3600 Å have been deposited at 1050°C by low-pressure MOCVD. Using an alternative precursor, tritertbutylaluminium (But3Al), and ammonia (NH3), we have grown AlN on sapphire (c-Al2O3). At a growth rate of 0.35 μm/h, the F...

The crystallinity of GaN layers grown at low temperature by organometallic vapor phase epitaxy on sapphire using dimethylhydrazine and triethylgallium has been studied with Raman spectroscopy, atomic force microscopy and Rutherford backscattering spectroscopy. The layers were grown in the temper...

The adsorption and thermal decomposition of triethylgallium (TEG) on GaAs has been studied using thermal desorption and XPS techniques. Pure Ga films are deposited when adsorbed TEG layers on GaAs are heated in a reaction which competes with TEG and diethylgallium (DEG) desorption. Ethene, ethen...

Mass spectrometry has been utilized to study the photolytic decomposition of triethylgallium and arsine leading to the deposition of GaAs thin films. A Hg-Xe arc lamp is utilized as the light source. We find that the products of photodissociation are essentially the same as those found previousl...

InGaN materials grown by metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMG) and triethylgallium (TEG) as alkyl source were compared. Ga-doped ZnO (GZO) films using radio frequency (RF) magnetron sputtering to feature Schottky contacts onto InGaN epitaxial layer with AlN ...

We report direct evidence for dissociative adsorption and recombinative desorption of triethylgallium on GaAs(100). Deuterated and undeuterated triethylgallium were used to investigate two distinct ethyl species produced by chemisorption of triethylgallium on GaAs(100): ethyl ligands bound to th...

The fabrication and characterization of site-controlled InGaAs/GaAs quantum dots (QDs) made by MOVPE using triethylgallium (TEGa) on patterned {1 1 1}B GaAs substrates are reported. Results are compared to more traditional pyramidal QD structures grown employing trimethylgallium (TMGa). Several ...

Dimethylhydrazine is a potential nitrogen precursor for organometallic vapor-phase epitaxy of GaN-based ternaries and quaternaries at relatively low temperatures. We have measured the vapor pressure of dimethylhydrazine and studied the pyrolysis characteristics of dimethylhydrazine in H2 ambient...

We demonstrated the catalytic growth of m-axial InxGa1−xN (0.10 ≤ x ≤ 0.17) nanocolumn arrays with high crystallinity on silicon substrates using metal–organic chemical vapor deposition with trimethylindium (TMIn), triethylgallium (TEGa), and ammonia as precursors. The high quality of InGaN n...

Intact garlic plants contain three flavour precursors, S-allylcysteine sulphoxide, S-propylcysteine sulphoxide and S-methylcysteine sulphoxide. Undifferentiated white callus contains only S-methylcysteine sulphoxide. Full flavour precursor expression, comparable to intact plants can be induced i...