1,1,1,2-tetrafluoroethane
A
1,1,1,2,2-pentafluoroethane
B
Difluoromethane
C
trifluoromethan
D
Hexafluoroethane
Conditions | Yield |
---|---|
With fluorine at 200 - 250℃; Product distribution; Further Variations:; Reagents; | A 1.1% B 0.9% C 0.4% D 97.6% |
Perfluoromethyl azide
A
carbon tetrafluoride
B
Hexafluoroethane
C
difluoramino trifluoromethane
Conditions | Yield |
---|---|
With fluorine at 70℃; for 48h; | A 6% B 2% C 92% |
polytetrafluoroethylene
Te4(2+)*2AsF6(1-)=Te4(AsF6)2
A
Hexafluoroethane
B
bis(pentafluoroethyl)tellurium
C
bis(pentafluoroethyl) ditelluride
D
pentafluoroethyl(nonafluorobutyl)tellurium
E
arsenic(III) fluoride
Conditions | Yield |
---|---|
at 100°C for 11 d, at 15 atm in a Monel reactor; | A n/a B 87% C 12.2% D 0.5% E n/a |
at 100°C for 11 d, at 15 atm in a Monel reactor; | A n/a B 87% C 12.2% D 0.5% E n/a |
at 100°C for 11 d, at 15 atm in a Monel reactor; | A n/a B 87% C 12.2% D 0.5% E n/a |
iodotrifluoromethane
A
rhodium iodo carbonyl (triphenylphosphine)2 complex
B
Hexafluoroethane
Conditions | Yield |
---|---|
In tetrahydrofuran a suspn. of Rh complex in THF and CF3I in 1:2 molar ratio sealed in vacuo in a Pyrex reaction tube was either stirred or shaken for 4 h at 20°C; volatiles were removed under vac., trapped at -196°C and analyzed by GLC, residue was chromd. using hexane followed by benzene or CHCl3 as eluent, and recrystd. from a mixt. of either CHCl3 and EtOH or benzene and MeOH; | A 44% B 79% |
In tetrahydrofuran a suspn. of Rh complex in THF and CF3I in 1:1 molar ratio sealed in vacuo in a Pyrex reaction tube was either stirred or shaken for 50 h at 20°C; 43% of the starting solvate was recovered; volatiles were removed under vac., trapped at -196°C and analyzed by GLC, residue was chromd. using hexane followed by benzene or CHCl3 as eluent, and recrystd. from a mixt. of either CHCl3 and EtOH or benzene and MeOH; | A 26% B 46% |
1,1,2-Trichloro-1,2,2-trifluoroethane
A
Hexafluoroethane
B
Chloropentafluoroethane
C
1,2-dichloro-1,1,2,2-tetrafluoroethane
Conditions | Yield |
---|---|
With chromium fluoride; magnesium fluoride; hydrogen fluoride at 250 - 500℃; Product distribution; | A 3% B 78% C 19% |
tetrafluorohydrazine
pentafluoro(1,1,2,2,2-pentafluoroethyl)-λ6-sulfane
A
carbon tetrafluoride
B
Hexafluoroethane
C
Perfluoroethylamine
D
sulfur tetrafluoride
E
sulphur hexafluoride
Conditions | Yield |
---|---|
NF3 formed too; | A n/a B n/a C 70% D n/a E n/a |
NF3 formed too; | A n/a B n/a C 70% D n/a E n/a |
(E)-1,2-difluoroethene
Hexafluoroacetone
A
Hexafluoroethane
B
1,1,1,2,3,4,4,4-octafluorobutane
cis-2,2-bis(trifluoromethyl)-3,4-difluoro-oxetan
trans-2,2-bis(trifluoromethyl)-3,4-difluoro-oxetan
Conditions | Yield |
---|---|
for 144h; Irradiation; | A 7 mg B 0.3% C 26% D 69% |
Ethanesulfonamide
A
Hexafluoroethane
B
ethanesulfonyl fluoride
C
Trifluoromethanesulfonyl fluoride
D
pentafluoroethanesulfonyl fluoride
Conditions | Yield |
---|---|
With hydrogen fluoride current: 4.5 to 5.5 V; 0.3 to 0.6 Adm-2; Further byproducts given; | A 2.1% B 3.1% C n/a D 54.9% |
Conditions | Yield |
---|---|
With silver for 1h; Product distribution; Irradiation; further metal; addition of NO; investigation of isotopic selectivity; | A n/a B 54% |
cis-2,3-difluoro-5,6-bis(trifluoromethyl)-2,3-dihydro-p-dioxin
A
Hexafluoroethane
B
(Z)-1,2-difluoro-ethene
C
(E)-1,2-difluoroethene
D
1,1,1,4,4,4-hexafluoro-2,3-butanedione
Conditions | Yield |
---|---|
at 610℃; Product distribution; various reaction conditions; | A 31% B 46% C 34% D 18% |
perfluoro(N,N-dimethyl trifluorovinylamine)
A
trifluoromethan
B
Vinylidene fluoride
C
Hexafluoroethane
D
trifluoromethyl isocyanate
E
perfluoro(2-aza-1-hexene)
Conditions | Yield |
---|---|
With toluene pyrolysis 610°C, contact time 0.66 sec, further product; | A n/a B n/a C n/a D n/a E 46% |
With toluene pyrolysis 610°C, contact time 0.66 sec, further product; | A n/a B n/a C n/a D n/a E 46% |
iodo-bis-trifluoromethyl-phosphine
A
iodotrifluoromethane
B
Hexafluoroethane
C
trifluoromethyldiiodophosphine
D
tris(trifluoromethyl)phosphine
E
phosphorous triiodide
Conditions | Yield |
---|---|
205°C (48 h); | A 2% B 8% C 2% D 45% E n/a |
propane-1-sulfonamide
A
freon-218
B
Hexafluoroethane
C
ethanesulfonyl fluoride
D
1-perfluoropropanesulfonyl fluoride
Conditions | Yield |
---|---|
With hydrogen fluoride current: 4.5 to 5.5 V; 0.3 to 0.6 Adm-2; Further byproducts given; | A 2.8% B 3.1% C 4.3% D 40% |
(Z)-1,2-difluoro-ethene
Hexafluoroacetone
A
Hexafluoroethane
B
1,1,1,2,3,4,4,4-octafluorobutane
cis-2,2-bis(trifluoromethyl)-3,4-difluoro-oxetan
trans-2,2-bis(trifluoromethyl)-3,4-difluoro-oxetan
Conditions | Yield |
---|---|
for 144h; Irradiation; | A 8 mg B 6% C 38% D 37% |
Conditions | Yield |
---|---|
With nickel(II) fluoride; fluorine at 100℃; | 35% |
With antimony pentafluoride at 25 - 98℃; under 50 - 760 Torr; |
tris(trifluoromethyl)arsine
methyl iodide
A
iodotrifluoromethane
B
Hexafluoroethane
C
methylbistrifluoromethylarsine
Conditions | Yield |
---|---|
Irradiation (UV/VIS); with UV-light; | A 18% B 15% C n/a |
trifluoromethan
A
polytetrafluoroethylene
B
carbon tetrafluoride
C
freon-218
D
perfluoropropylene
E
Hexafluoroethane
Conditions | Yield |
---|---|
With activated carbon supported potassium at 799.84℃; under 750.075 Torr; Pyrolysis; Inert atmosphere; | A 16.1% B n/a C n/a D 14.4% E n/a |
Conditions | Yield |
---|---|
Irradiation (UV/VIS); photochemical hydrogenation at 50°C, 16 h; | A n/a B 14% |
Irradiation (UV/VIS); photochemical hydrogenation at 20°C, 19 h; |
1,1,1,2-tetrafluoroethane
A
1,1,1,2,2-pentafluoroethane
B
Hexafluoroethane
Conditions | Yield |
---|---|
With cobalt (III) fluoride at 220℃; for 0.000277778h; Product distribution; var. fluorinating agents and temp.; | A 12.4% B 2% |
Product distribution; |
Conditions | Yield |
---|---|
im Kohlelichtbogen; | |
In neat (no solvent) other Radiation; decomposition of CF4 by (60)Co-γ-rays, formation of C2F6 and C3F8;; determination by ESR;; |
Conditions | Yield |
---|---|
im Kohlelichtbogen; | |
Zersetzung im elektrischen Lichtbogen; | |
In neat (no solvent) Electric Arc; formation of C2F4 and C2F6 in electric arc between coal electrodes;; |
Conditions | Yield |
---|---|
bei wiederholtem Leiten durch einen Kohlelichtbogen unter vermindertem Druck; |
Conditions | Yield |
---|---|
at 127℃; | |
at 626.9 - 826.9℃; Kinetics; | |
In neat (no solvent) Kinetics; reaction is carried out by photolysis of CF3COCF3 in Ar at various conditions;; |
iodo-bis-trifluoromethyl-phosphine
A
iodotrifluoromethane
B
Hexafluoroethane
C
trifluoromethyldiiodophosphine
D
tris(trifluoromethyl)phosphine
Conditions | Yield |
---|---|
at 205℃; |
2H-pentafluoropropene
iodotrifluoromethane
A
1,1,1,3,3-pentafluoro-3-iodo-2-trifluoromethyl-propane
B
trifluoromethan
C
Hexafluoroethane
Conditions | Yield |
---|---|
UV-Licht.Irradiation; |
tetrafluoroacetic acid
A
carbon tetrafluoride
B
Carbonyl fluoride
C
Hexafluoroethane
D
methylammonium carbonate
Conditions | Yield |
---|---|
at 30 - 80℃; under 1 - 3 Torr; Kinetics; Thermolyse; |
pentafluoro-propionyl hypofluorite
A
Hexafluoroethane
B
methylammonium carbonate
Conditions | Yield |
---|---|
at -40 - 25℃; Zersetzung unter vermindertem Druck; |
Conditions | Yield |
---|---|
With copper; fluorine | |
With fluorine at 64℃; | |
With chlorine trifluoride und Leiten des Reaktionsgemisches ueber Aluminiumfluorid bei 360grad; |
Conditions | Yield |
---|---|
With iodine pentafluoride anfangs in Kaeltemischung, zuletzt bei 80-90grad; |
polytetrafluoroethylene
A
perfluoropropylene
B
Hexafluoroethane
C
perfluoroisobutylene
D
Octafluorocyclobutane
Conditions | Yield |
---|---|
at 600℃; Dimerisierung.Pyrolysis; | |
at 650℃; Dimerisierung.Pyrolysis; |
Conditions | Yield |
---|---|
With hydrogen at 336.84 - 736.84℃; Product distribution / selectivity; Gas phase; Inert atmosphere; | 100% |
Conditions | Yield |
---|---|
Sonication; electric discharge, low pressure; | 90% |
Sonication; electric discharge, low pressure; | 90% |
Hexafluoroethane
tellurium(IV) tetrabromide
A
bis(trifluoromethyl) ditelluride
B
bis(trifluoromethyl)tellurium
Conditions | Yield |
---|---|
other Radiation; at 20°C (46 h); distn.; | A 20% B 33% |
other Radiation; at 20°C (46 h); distn.; | A 20% B 33% |
other Radiation; at 20°C (46 h); distn.; | A 20% B 33% |
other Radiation; at 20°C (46 h); distn.; | A 20% B 33% |
Conditions | Yield |
---|---|
other Radiation; converting BiI3 by radio frequency at 1 Torr into plasma then C2F3 adding continuously, reacting time 100 h; collecting of -78°C and -196°C traps, distn. at -55°C; | 32% |
Conditions | Yield |
---|---|
In solid matrix other Radiation; in special constructed rotating cold finger reactor; with W basket filled with Tl reactor evacuated, cold finger is cooled by liquid N2 and CF3CF3 added at rate 1-2 mmol/min, radio frequency power is set approx. 50 W and metal slowly evapd. during 3 h; condensed CH2Cl2, matrix dropped into bottom by warming with air, CF3CF3 distd. in vac. at -131 °C, pressurized with 500 mm of N2 and warmed to room temp. with stirring, soln. of Tl(CF3)3 siphonded into flask; | 25% |
Conditions | Yield |
---|---|
With dihydrogen peroxide; iodine monofluoride; bis(acetylacetonate)oxovanadium In water Product distribution / selectivity; Heating / reflux; | 15% |
With iodine monofluoride; palladium on activated carbon; copper on carbon; platinum on activated charcoal at 250 - 550℃; Product distribution / selectivity; Vapor phase; |
1,2-dimethoxyethane
Hexafluoroethane
cadmium
bis(trifluoromethyl)cadmium * dimethoxyethane
Conditions | Yield |
---|---|
In diethyl ether Cd was vaporized and condensed with CF3 radicals on a liquid N2 cooled surface, after 3 h reactor was warmed to -78°C to pump off the excess C2F6, ether and glyme were condensed into reactor; evapn. of volatiles, extn. of residue with Et2O (inert atmosphere); IR,NMR; | 11% |
indium
Hexafluoroethane
trimethylphosphane
tris(trifluoromethyl)indium(trimethylphosphine)
Conditions | Yield |
---|---|
In neat (no solvent) other Radiation; In was vaporized from a tungsten basket and condensed with CF3 radicals, generated from C2F6 by radio frequency glow discharge, at -196°C for 3 h; removal of C2F6 in vac. at -78°C; ether and P(CH3)3 were added by condensation; room temp.;; the volatiles were pumped off; extraction with ether; recrystn. from hexane; performed in an argon dry box;; | 9% |
Conditions | Yield |
---|---|
With pyridine In diethyl ether Zn was vaporized and condensed with CF3 radicals on a liquid N2 cooled surface, after 3 h reactor was warmed to -78°C to pump off the excess C2F6, ether and pyridine were condensed into reactor; warmed to room temp., extd. with CH2Cl2 and recrystd. from hexane; NMR; | 8% |
Hexafluoroethane
trimethylbismuthine
A
Dimethyl-trifluormethyl-wismut
B
Methyl-bis-trifluormethyl-wismut
Conditions | Yield |
---|---|
In gas other Radiation; radio frequency radiation of mixt. of educts in a special pyrex reactor,ratio of educts: C2F6/alkyl metal = 25/1, 2h, condensation of product on a liquid N2 filled cold finger, excess C2F6 removed by vac. distn. at -100°C; sepn. by gas chromy. (10% SE-30 on Chromosorb P); | A 5.1% B 0.9% |
Hexafluoroethane
dimethylmercury
A
bis(trifluoromethyl)mercury
B
methyl(trifluoromethyl)mercury
Conditions | Yield |
---|---|
In gas other Radiation; radio frequency radiation of mixt. of educts in a special pyrex reactor,ratio of educts: C2F6/alkyl metal = 25/1, 2h, condensation of product on a liquid N2 filled cold finger, excess C2F6 removed by vac. distn. at -100°C; sepn. by gas chromy. (10% SE-30 on Chromosorb P); | A 4.9% B 3.4% |
Reported in EPA TSCA Inventory.
The Hexafluoroethane ,its cas register number is 76-16-4.It also can be called as Perfluoroethane and the IUPAC name about this chemicals is 1,1,1,2,2,2-Hexafluoroethane .It belongs to the refrigerants and organics.Following are the chemical properties about this chemicals: (1)Index of Refraction: 1.202 ; (2)Molar Refractivity: 12.22 cm3 ; (3)Molar Volume: 94.3 cm3 ; (4)Surface Tension: 8 dyne/cm ; (5)Enthalpy of Vaporization: 16.15 kJ/mol ; (6)Vapour Pressure: 23700 mmHg at 25°C .It is chemically inert in many situations, but can react violently with strong reducing agents such as the very active metals and the active metals. Can react with strong oxidizing agents or weaker oxidizing agents under extremes of temperature.
The Hexafluoroethane is used as a versatile etchant in semiconductor manufacturing. It can be used for selective etching of metal silicides and oxides versus their metal substrates and also for etching of silicon dioxide over silicon. In the using process, you need to wear suitable respiratory equipment in case of insufficient ventilation. Except these safty informations, there are also exist other data like WGK Germany is 3,RTECS is KI4110000,Hazard Note is Irritant and TSCA is T ,also HazardClass about it is 2.2.
The Hexafluoroethane is a colorless, odorless gas and is relatively inert. The mixture is nonflammable and nontoxic, though asphyxiation may occur because of displacement of oxygen. Under prolonged exposure to fire or intense heat the containers may rupture violently and rocket. This chemicals is chemically inert in many situations, but can react violently with strong reducing agents such as the very active metals and the active metals. It also can react with strong oxidizing agents or weaker oxidizing agents under extremes of temperature.
This chemicals can be described computed from structure:
(1)Canonical SMILES: C(C(F)(F)F)(F)(F)F
(2)InChI: InChI=1S/C2F6/c3-1(4,5)2(6,7)8
(3)InChIKey: WMIYKQLTONQJES-UHFFFAOYSA-
The most important thing about Hexafluoroethane is the toxicity, following is the form:
Organism | Test Type | Route | Reported Dose (Normalized Dose) | Effect | Source |
---|---|---|---|---|---|
rat | LC | inhalation | > 20pph/2H (200000ppm) | Journal of Occupational Medicine. Vol. 4, Pg. 262, 1962. |
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