Conditions | Yield |
---|---|
With multi-walled carbon nanotubes In solid byproducts: CO, H2, H2O; mixt. of multi-walled carbon nanotubes and H3BO3 taken in quartz tube, NH3 gas passed through with 10 sccm flow rate at 200 °C 2 h, temp.slowly raised to 1000 °C for 3 h; | 99% |
With pyrographite; iron In neat (no solvent) byproducts: CO, H2, H2O; mixt. of activated carbon, H3BO3 and ferric nitrate (mole ratio of 3:1:0.1) taken in quartz tube, dried in oven at 60 °C 6 h, NH3 gas passed through with 10 sccm flow rate, heating at 1300 °C for 4 h; | |
byproducts: H2O; synthesis of BN coating on the surfaces of carbon nanotubes and nanofibers around 1150°C using infiltration of nanotubes with boric acid and nitridation in ammonia; |
Conditions | Yield |
---|---|
over 600°C in N2 atmosphere; | 90% |
Ca3N2, hexagonal High Pressure; over 100kg/cm2, in N2 stream, 1700-2000°C, 5-9 min; washing with water; | 80% |
magnesium nitride High Pressure; over 100kg/cm2, in N2 stream, 1700-2000°C, 5-9 min; washing with water; | 80% |
Conditions | Yield |
---|---|
With Fe2O3 In neat (no solvent, solid phase) mixt. CaB6 and Fe2O3 was heated to 750°C for 10 min under Ar atm., heated to 1150°C at 6°C/min keeping for 6 h in NH3 atm.; react. mixt. was cooled to room temp., product was washe with HCl, filtered, washed with water and dried in vacuo at 80°C for 12 h; | 81.4% |
Conditions | Yield |
---|---|
With NH3 byproducts: H2; at 190°C, NH3:B2H6=9:1; | A 9% B n/a C 80% |
Conditions | Yield |
---|---|
Ca3N2, hexagonal High Pressure; over 100kg/cm2, in N2 stream, 1700-2000°C, 5-9 min; washing with water; | 80% |
magnesium nitride High Pressure; over 100kg/cm2, in N2 stream, 1700-2000°C, 5-9 min; washing with water; | 80% |
With ammonia heating at 900°C for 2-6 h under NH3 flow; |
Conditions | Yield |
---|---|
Ca3N2, hexagonal High Pressure; over 100kg/cm2, in N2 stream, 1700-2000°C, 5-9 min; washing with water; | 80% |
magnesium nitride High Pressure; over 100kg/cm2, in N2 stream, 1700-2000°C, 5-9 min; washing with water; | 80% |
500-900°C in NH3 stream, at 1650°C in N2 or NH3 stream; |
Conditions | Yield |
---|---|
excess of NH3 at ambient temp. in N2 or H2 atmosphere; heating in H2 at 1200°C; 1000°C in H2 stream or in vac.; or at 2000°C in N2; | 80% |
With hydrogen In gaseous matrix r. f. thermal plasma chemical vapour deposition (Ar carrier gas, Mo or Si substrate, substrate temp. 430-1100°C, deposition time 5 -10 min); secondary electron microscopy, X-ray diffraction; | |
BCl3 + NH3 flow (P(BCl3)/P(NH3) = 0.5) passed on support heated at 1323 K (3.5-4.5 min); BCl3 flow stopped; kept in Ar + 7% H2 atm (NH3 flow reduced by 1/2) for 30 min; total flow rate reduced; cooled to room temp.; XRD; |
poly(2-vinylpentaborane)
boron nitride
Conditions | Yield |
---|---|
With ammonia In not given byproducts: CH4, H2; slowly heating (2 °C/min) of B5H8CHCH2 from 25 to 350 °C under a flow of NH3 (100 mL/min), heating (10 °C/min) to 1000 °C, temp. maintained at 1000 ° C for 2 h;; elem. anal., the largely amorphous product changes at 1450 °C to crystalline BN;; | 72.2% |
Conditions | Yield |
---|---|
In melt 300-1000°C, 1 mole dicyandiamide, 2 mole NH4Cl, 2-4 mole H3BO3; | 65% |
Conditions | Yield |
---|---|
With NH3 byproducts: H2; at 400°C, NH3:B2H6=9:1; | A 30% B 65% |
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: NaCN, CO2, NH3; High Pressure; mixing of NaBH4 and CO(NH2)2, placing into stainless steel autoclave, sealing and heating at rate of 20°C/min in furnace to 550°C,heating at this temp. for 10 h, natural cooling to ambient temp.; washing with EtOH, dilute HCl and H2O several times, drying at 60°C for 10 h; | 65% |
boron nitride
Conditions | Yield |
---|---|
With NH3 In neat (no solvent) pyrolysis under NH3 to 1000 °C; detn. by elem. anal.; | 62.4% |
borazine
boron nitride
Conditions | Yield |
---|---|
In neat (no solvent) pyrolysis under pressure (100 MPa) at temperatures between 250°C and 700°C (N2), elem.anal.; | 60% |
In neat (no solvent) High Pressure; borazine sealed under N2 in a gold capsule, pyrolyzed at 250-700°C, 25-100MPa, heating rate 10°C/min; | |
In neat (no solvent) preparation of BN layers by induction heating of borazol; | |
In neat (no solvent, gas phase) byproducts: H2; deposition on varius substrates; | |
N2-carrying gas, chemical vapor deposition (graphite substrate, 1300-1800°C, 100-10000 Pa); detd. by IR spectroscopy; |
Conditions | Yield |
---|---|
at 400°C for 2 h; | A 50% B n/a |
at 260-300°C in high vac. for 18 h; |
Conditions | Yield |
---|---|
With H2; N2 In neat (no solvent) Electric Arc; pulse heating (plasma, puls repitition rate 5-12,5 Hz, N2 flow 0.2 - 1.65 l/min, H2 flow 1.13 - 3.5 l/min9; further products; X-ray diffraction; | A n/a B n/a C 50% D n/a E n/a |
Conditions | Yield |
---|---|
With MgO In neat (no solvent) 1:1 mixt. of B and MgO heated to 1300 °C using RF inducting furnace, vapour argon-transported in to reaction chamber with temp. ca. 1100 °C, NH3 flow introduced; detd. by XRD; | 40% |
With magnesium oxide In neat (no solvent) byproducts: Mg; 1:1 molar mixt. of B and MgO reacted at 1300 °C to form B2O2 and Mg vapor, Ar-transported into react. chamber kept at 1100 °C, NH3added, at 1100 °C BN produced; Mn and Cr impurities from MgO trapped during BN growth; | |
nickel boride In solid B and NiB/Al2O3 mixed by ball-milling 8 h, placed in alumina tube, heated in flowing argon at 1000-1500 °C, NH3 introduced at rate of 80 sccm 2 h, cooled to room temp.; |
boron trifluoride
boron trichloride
B
boron nitride
C
magnesium chloride
Conditions | Yield |
---|---|
700-1000°C; diluterd with N2; washing with HCl at 1000°C; | A n/a B 34% C n/a |
Conditions | Yield |
---|---|
byproducts: NH3, NaOH; mol ratio of B2O3:NaNH2 = 1:3; heating; reactn. starts at 210°C;; | 29.9% |
byproducts: NH3, NaOH; mol ratio of B2O3:NaNH2 = 1:3; heating; reactn. starts at 210°C;; | 29.9% |
byproducts: NH3, NaOH; mol ratio of B2O3:NaNH2 = 1:3; at 165°C in the presence of large amts. of NaOH; | |
byproducts: NH3, NaOH; mol ratio of B2O3:NaNH2 = 1:3; at 165°C in the presence of large amts. of NaOH; |
2,4,6-triazidoborazine
boron nitride
Conditions | Yield |
---|---|
In neat (no solvent) heating in Pt-crucible inside quartz tube (N2-stream, 1200.°C, 8 h); elem. anal.; | 15% |
aluminum oxide
nitrogen
aluminium
A
boron nitride
Conditions | Yield |
---|---|
With Fe impurity In neat (no solvent) AlB2 (contg. Al, Fe and Al2O3 impurities) powder pressed uniaxially at 60 MPa; nitrided with N2 (8 atm) at 1900°C for 1 h; detd. by X-ray diffraction; composite contg. AlN, BN, FeB49 (trace) and Al5O6N (trace) obtained; | A n/a B n/a C 1% D 1% |
With Fe impurity In neat (no solvent) AlB2 (contg. Al, Fe and Al2O3 impurities) powder pressed uniaxially at 60 MPa; nitrided with N2 (8 atm) at 1600°C for 1 h; detd. by X-ray diffraction; composite contg. AlN, BN, FeB49 and Al5O6N (trace) obtained; | A n/a B n/a C n/a D 1% |
aluminum oxide
nitrogen
aluminium
A
boron nitride
Conditions | Yield |
---|---|
In neat (no solvent) AlB2 (contg. Al and Al2O3 impurities) powder pressed uniaxially at 60 MPa; nitrided with N2 (8 atm) at 2000°C for 1 h or at 1600°Cfor 5 h and then at 2000°C for 1 h; detd. by X-ray diffraction; composite contg. AlN, BN, Al1.67B22 (trace) and Al5O6N (trace) obtained; | A n/a B n/a C 1% D 1% |
aluminum oxide
nitrogen
aluminium
A
boron nitride
Conditions | Yield |
---|---|
In neat (no solvent) AlB2 (contg. Al and Al2O3 impurities) powder pressed uniaxially at 60 MPa; nitrided with N2 (8 atm) at 1600°C for 5 h and at 1900°C for 1 h; detd. by X-ray diffraction; composite contg. AlN, BN and Al5O6N (trace) obtained; | A n/a B n/a C 1% |
Conditions | Yield |
---|---|
In solid Reaction at higher temperatures and with glowing effects. Formation of various Mg compounds.; | |
In neat (no solvent, solid phase) Reaction at higher temperatures and with glowing effects. Formation of various Mg compounds.; |
Conditions | Yield |
---|---|
With sodium byproducts: O2; | |
With Na byproducts: O2; |
boron nitride
Conditions | Yield |
---|---|
With ammonia byproducts: H2O; formatin of BN on the surface by heating; | |
With potassium cyanide by glowing; | |
With ammonia In neat (no solvent) reaction at 600°C;; |
Conditions | Yield |
---|---|
With pyrographite In gaseous matrix byproducts: B4C; heating (1573-1773 K, 8 h, N2 or N2/H2), phase composition nad microstructure depending on temperature, time, starting B/C ratio, and gas composition; | |
With pyrographite In gas laser ablation of B2O3 in the presence of graphite in atmosphere of N2 (He carrier gas) in a pulsed supersonic jet; MS; | |
chemically vapor deposition on carbon nanotubes under flow of N2 at 1500°C; detn. by HRTEM; |
Conditions | Yield |
---|---|
byproducts: O2; | |
byproducts: O2; |
Conditions | Yield |
---|---|
by glowing; |
Conditions | Yield |
---|---|
byproducts: sodium borate; small amounts of BN are obtained;; |
Conditions | Yield |
---|---|
In neat (no solvent) reaction of mixture in N2 atmosphere;; | |
byproducts: CO; in N2 under pressure; | |
With ammonia by heating; |
Conditions | Yield |
---|---|
In neat (no solvent) heating (1200°C, 4 d, 1000°C, 4 d), cooling to room temp. (10 h); | A n/a B 80% |
Conditions | Yield |
---|---|
metal, halogenide, boron nitride and graphite are placed in niobium ampoules, heated at 950°C for 12 h, tempered at 800°C for 3 d; | 70% |
Conditions | Yield |
---|---|
metal, halogenide, boron nitride and graphite are placed in niobium ampoules, heated at 950°C for 12 h, tempered at 800°C for 3 d; | 70% |
Conditions | Yield |
---|---|
In neat (no solvent) heating (1200°C, 4 d, 1000°C, 4 d), cooling to room temp. (10 h); | 60% |
Conditions | Yield |
---|---|
With W In neat (no solvent) BN, Ba, W and BaCO3 were filled into a W-crucible under Ar, high-frequency furnace, heating under N2 up to 750 °C in 45 min, keeping at this temp. for 30 min, heating up to 1450 °C in 1 h, keeping at this temp. for 30 min; cooling to 200 °C in 39 h; | 50% |
Conditions | Yield |
---|---|
In trichlorofluoromethane byproducts: BF3; Sonication; condensing of a mixture of I2, BN and CCl3F into a quartz apparature (passivated with F2), addn. of F2 at -196°C, warming to -30°C for 2 h under shaking, exposur to ultrasonic waves for 5 min at -18°C (explosion danger); warming to -10°C, pumping of CCl3F at -50°C, sublimation at -20°C; | 30% |
boron nitride
boric acid
Conditions | Yield |
---|---|
With water after 1 hour reaction with boiling water; | 1.2% |
With H2O after 1 hour reaction with boiling water; | 1.2% |
With hydrogenchloride byproducts: NH4Cl; at 160-200°C in sealed tube; |
Conditions | Yield |
---|---|
low red heat; extraction of KCN with alcohol or H2O; | |
low red heat; extraction of KCN with alcohol or H2O; |
The Boron nitride with the cas number 10043-11-5, is also called azanylidyneborane named by IUPAC. It's system name is nitriloborane. It belongs to the following product categories: (1)Inorganics; (2)Ceramics; (3)Metal and Ceramic Science; (4)Nitrides. It's physical properties about Pregn-4-ene-3,20-dione,16,17-epoxy-11-hydroxy- are: (1)#H bond acceptors: 1 ; (2)#H bond donors: 0 ; (3)#Freely Rotating Bonds: 0 ; (4)Polar Surface Area: 23.79 Å2. It seems like white powder. It is stable but incompatible with oxidizing agents. When you are using this chemical, please be cautious about it as the following: boron nitride is quite irritating to eyes and respiratory system. Before you are using it , please wear suitable protective clothing. In case of contact with eyes, rinse immediately with plenty of water and seek medical advice.
Prepration of Boron nitride: Boron nitride has not been found in nature and therefore is produced synthetically. The most common raw materials for BN synthesis, boric acid and boron trioxide are produced on industrial scales by treating minerals borax and colemanite with sulfuric acid or hydrochloric acid:
Na2B4O7·10H2O (borax) + H2SO4 → 4 H3BO3 (boric acid) + Na2SO4 + 5 H2O
Hexagonal boron nitride is obtained by the reacting boron trioxide (B2O3) or boric acid (B(OH)3) with ammonia (NH3) or urea (CO(NH2)2) in nitrogen atmosphere:
B2O3 + 2 NH3 → 2 BN + 3 H2O (T = 900 °C)
B(OH)3 + 3 NH3 → BN + 2 NH3 + 3 H2O (T = 900 °C)
B2O3 + CO(NH2)2 → 2 BN + CO2 + 2 H2O (T > 1000 °C)
B2O3 + 3 CaB6 + 10 N2 → 20 BN + 3 CaO (T > 1500 °C)
Uses of Boron nitride: Boron nitride ceramics are traditionally used as parts of high-temperature equipment because of excellent thermal and chemical stability. Boron nitride has a great potential in nanotechnology. Nanotubes of BN can be produced that have a structure similar to that of carbon nanotubes. However the properties are very different: carbon nanotubes can be metallic or semiconducting depending on the rolling direction and radius, whereas a BN nanotube is an electrical insulator with a wide bandgap of ~5.5 eV (same as in diamond), which is almost independent of tube chirality and morphology. Similar to other BN forms, BN nanotubes are more thermally and chemically stable than carbon nanotubes which favors them for some applications.
You can still convert the following datas into molecular structure :
(1).SMILES: B#N
(2).InChI:InChI=1/BN/c1-2
Toxic information of Boron nitride can be showed as follows:
Organism | Test Type | Route | Reported Dose (Normalized Dose) | Effect | Source |
---|---|---|---|---|---|
rabbit | LD | skin | > 20mL/kg (20mL/kg) | Union Carbide Data Sheet. Vol. 7/20/1965, | |
rat | LD | oral | > 50gm/kg (50000mg/kg) | Union Carbide Data Sheet. Vol. 7/20/1965, |
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