Conditions | Yield |
---|---|
In neat (no solvent) reaction at 100 °C for a longer period of time;; | 79% |
In neat (no solvent) reaction at 100 °C for a longer period of time;; | 79% |
Conditions | Yield |
---|---|
With hydrogenchloride In diethyl ether at 60℃; for 19h; Temperature; | A 5% B 17% C 76% |
With hydrogenchloride; diethyl ether In benzene-d6 at 80℃; Reagent/catalyst; Schlenk technique; Inert atmosphere; | A 16 %Spectr. B 36 %Spectr. C 40 %Spectr. |
hydrogenchloride
monosilane
A
chlorosilane
B
Dichlorosilane
Conditions | Yield |
---|---|
In diethyl ether at 60℃; for 20h; | A 73% B 27% |
In diethyl ether at 80℃; for 42h; | A 34% B 66% |
Conditions | Yield |
---|---|
With hydrogenchloride In diethyl ether at 80℃; for 15h; Solvent; Temperature; | A 64% B 36% |
With hydrogenchloride; diethyl ether In benzene-d6 at 80℃; for 15h; Reagent/catalyst; Schlenk technique; Inert atmosphere; | A 64 %Spectr. B 36 %Spectr. |
Conditions | Yield |
---|---|
With hydrogenchloride In diethyl ether at 60℃; for 20h; | A 42% B 13% |
With hydrogenchloride In diethyl ether at 80℃; for 42h; | A 20% B 33% |
With hydrogenchloride; diethyl ether In benzene-d6 at 60℃; for 20h; Reagent/catalyst; Schlenk technique; Inert atmosphere; | A 42 %Spectr. B 13 %Spectr. |
With hydrogenchloride; diethyl ether In benzene-d6 at 80℃; Reagent/catalyst; Schlenk technique; Inert atmosphere; | A 20 %Spectr. B 33 %Spectr. |
Conditions | Yield |
---|---|
With aluminium In neat (no solvent) passing a mixture of SiHCl3 and H2 (1:2) over Al at 350 °C;; separation by fractionated distillation;; | A 1-2 B 15% |
With Al In neat (no solvent) passing a mixture of SiHCl3 and H2 (1:2) over Al at 350 °C;; separation by fractionated distillation;; | A 1-2 B 15% |
Conditions | Yield |
---|---|
With hydrogenchloride; trichlorosilane; aluminium chloride | |
With trichlorosilane; aluminium chloride | |
With trichlorosilane; aluminium chloride |
dibromochlorosilane
trimethylstannane
A
dibromosilane
B
chlorosilane
C
Dichlorosilane
Conditions | Yield |
---|---|
In neat (no solvent) condensing of equimolar amts. of tinhydride and SiClHBr2 (trace of SiCl2HBr present) into cold finger, reaction at room temp. (30 min); further products; not isolated; IR spectroscopy; | A 0% B n/a C 0% |
trichlorosilane
trimethylstannane
A
trimethyltin(IV)chloride
B
monosilane
C
Dichlorosilane
Conditions | Yield |
---|---|
In neat (no solvent) inert atmosphere (N2, Ar or high vac.), room temperature, equimolar amts. of halosilane/tinhydride, reactn. time 12 h; not isolated; IR spectroscopy (identified 41% SiCl2H2 and 15% SiH4 in product mixt.); |
tetrachlorosilane
trimethylstannane
A
trichlorosilane
B
trimethyltin(IV)chloride
C
monosilane
D
Dichlorosilane
Conditions | Yield |
---|---|
In neat (no solvent) inert atmosphere (N2, Ar or high vac.), room temperature, equimolar amts. of halosilane/tinhydride, reactn. time 36 h; not isolated; IR spectroscopy (identified 25-30% SiCl3H, 15% SiCl2H2 and 10% SiH4 in product mixt.); |
calcium hydride
tetrachlorosilane
A
trichlorosilane
B
chlorosilane
C
Dichlorosilane
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: H2, HCl; passing SiCl4 vapor over CaH2 below red heat;; | A n/a B 0% C 0% |
In neat (no solvent) byproducts: H2, HCl; passing SiCl4 vapor over CaH2 below red heat;; | A n/a B 0% C 0% |
tetrachlorosilane
monosilane
A
trichlorosilane
B
chlorosilane
C
Dichlorosilane
Conditions | Yield |
---|---|
In gas reactor temp.: 250 - 500°C; detn. by gas chromy.; |
tetrachlorosilane
hydrogen
A
aluminium trichloride
B
trichlorosilane
C
Dichlorosilane
Conditions | Yield |
---|---|
With aluminium In neat (no solvent) byproducts: SiCl4; reaction by passing SiCl4 vapor with H2 (1:1) over Al at 400 °C;; distn.;; | |
With Al In neat (no solvent) byproducts: SiCl4; reaction by passing SiCl4 vapor with H2 (1:1) over Al at 400 °C;; distn.;; |
tetrachlorosilane
hydrogen
A
trichlorosilane
B
Dichlorosilane
Conditions | Yield |
---|---|
With co-catalyst: pyrimidine or P(OPh)3; tri-n-butyl-tin hydride In toluene absence of air; H2-stream; further alternate co-catalysts: PCy3 or PBu3 or N-methylimidazole or pyridine or chinoline; gas chromy.; | |
tri-n-butyl-tin hydride In acetonitrile absence of air; H2-stream; gas chromy.; | |
With Al or Mg or Zn In neat (no solvent, gas phase) passing SiCl4 vapor and H2 over granulated Al, Mg or Zn at 350-450 °C;; condensation of the gaseous reaction product by dry ice, separation of the mixture by fractionation;; | |
With Al or Mg or Zn In gas passing SiCl4 vapor and H2 over granulated Al, Mg or Zn at 350-450 °C;; condensation of the gaseous reaction product by dry ice, separation of the mixture by fractionation;; |
tetrachlorosilane
hydrogen
A
trichlorosilane
B
monosilane
C
Dichlorosilane
Conditions | Yield |
---|---|
With co-catalyst: P(O(i)Pr)3 or PMe2Ph or PPh3; tri-n-butyl-tin hydride In toluene absence of air; H2-stream; further alternate co-catalysts: PCy3 or PBu3 or N-methylimidazole or pyridine or chinoline; gas chromy.; |
tetrachlorosilane
hydrogen
A
trichlorosilane
B
chlorosilane
C
Dichlorosilane
Conditions | Yield |
---|---|
With co-catalyst: P(OMe)3; tri-n-butyl-tin hydride In toluene absence of air; H2-stream; further alternate co-catalysts: PCy3 or PBu3 or N-methylimidazole or pyridine or chinoline; gas chromy.; |
tin(IV) chloride
monosilane
A
chlorosilane
B
Dichlorosilane
Conditions | Yield |
---|---|
In not given chlorination with SnCl4 leads to SiH3Cl at room temp.; no SnH2Cl2 formed;; | A n/a B 0% |
hydrogenchloride
monosilane
B
trichlorosilane
C
chlorosilane
D
hydrogen
E
Dichlorosilane
Conditions | Yield |
---|---|
In gas Kinetics; Irradiation (UV/VIS); infrared laser irrdn. of SiH4-HCl mixt. in pressure range of 28-60 torrand in temp. range of 295-414 K; analyzed by mass spectrometry; |
Dichloromethylsilane
A
trichlorosilane
B
chlorosilane
C
monosilane
D
Dichlorosilane
E
dimethylsilicon dichloride
Conditions | Yield |
---|---|
With AlCl3 In neat (no solvent) (CH3)SiHCl2 and AlCl3 at 325°C under pressure; further products;; | |
With AlCl3 In neat (no solvent) (CH3)SiHCl2 and AlCl3 at 325°C under pressure; further products;; |
Conditions | Yield |
---|---|
In neat (no solvent) reaction at rather low temperature;; | |
In neat (no solvent) heating of amorphous Si with HCl;; | |
In neat (no solvent) reaction at rather low temperature;; | |
In neat (no solvent) heating of amorphous Si with HCl;; |
Dimethyl ether
silicon
A
Methyltrichlorosilane
B
tetrachlorosilane
C
trichlorosilane
D
Dichlorosilane
Conditions | Yield |
---|---|
With hydrogenchloride; copper In neat (no solvent) Si-Cu (9:1) and a mixt. of CH3OCH3 and HCl (2:1) at 325°C;; |
calcium hydride
tetrachlorosilane
A
chlorosilane
B
Dichlorosilane
Conditions | Yield |
---|---|
In neat (no solvent) passing SiCl4 vapor over heated CaH2;; | A 0% B 0% |
In neat (no solvent) passing SiCl4 vapor over heated CaH2;; | A 0% B 0% |
trichlorosilane
Dichlorosilane
Conditions | Yield |
---|---|
With catalyst: anion exchange resin In gas Kinetics; byproducts: SiCl4; mixt. of Ar and SiHCl3 is passed over the catalyst (anion exchange resins AV17-12P with active group -N(+)Me3, AV27-10P with active group -N(+)Me2C2H5O, AN18-12P with active group -N(+)HMe2) at 388 K; react. is monitored by chromy.; |
trichlorosilane
A
chlorosilane
B
monosilane
C
Dichlorosilane
Conditions | Yield |
---|---|
With hydrogen; aluminium In neat (no solvent) byproducts: AlCl3; passing a mixture of SiHCl3 and H2 (1:2) over Al at 350 °C;; |
trichlorosilane
hydrogen
A
chlorosilane
B
monosilane
C
Dichlorosilane
Conditions | Yield |
---|---|
In neat (no solvent, gas phase) | |
In gas |
tetrachlorosilane
A
trichlorosilane
B
chlorosilane
C
monosilane
D
Dichlorosilane
Conditions | Yield |
---|---|
In tetrahydrofuran-d8 MgH2 and clorosilane (1.10:0.66 molar ratio) sealed under Ar; stored for 3 d at room temp., NMR; |
Conditions | Yield |
---|---|
With aluminium In neat (no solvent) passing a mixture of SiCl4 and H2 over Al at 400 °C;; | 3-5 |
With Al In neat (no solvent) passing a mixture of SiCl4 and H2 over Al at 400 °C;; | 3-5 |
Conditions | Yield |
---|---|
In gas Kinetics; helium buffer gas (total pressure 5 Torr), ambient temp.; high-resolution transient absorption spectroscopy (SiH2); |
Conditions | Yield |
---|---|
Prepd. by laser chemical vapor pptn. at atmospheric pressure.; | 100% |
In neat (no solvent) chemical vapor deposition with a mixt. of SiH2Cl2 and H2; | |
With hydrogen chemical vapor deposition (hot-wall reactor, basic pressure 10 or 76 Torr, 1223 K); |
Conditions | Yield |
---|---|
Prepd. by laser chemical vapor pptn. at atmospheric pressure.; | 100% |
In neat (no solvent) Kinetics; under Ar, in a low-pressure flow reactor at various condns.; | |
low pressure chemical vapor deposition at 820 °C; |
Conditions | Yield |
---|---|
In isopropyl alcohol | A 90% B n/a |
Conditions | Yield |
---|---|
In toluene at -78℃; for 23h; Inert atmosphere; | 90% |
Conditions | Yield |
---|---|
In diethyl ether H2SiCl2 and n-C3H7MgBr in ether; acidic hydrolysis;; | 88% |
In diethyl ether H2SiCl2 and n-C3H7MgBr in ether; acidic hydrolysis;; | 88% |
Cp(PMe3)2RuH
Dichlorosilane
A
RuCp(PMe3)SiH2Cl
B
[Cp(PMe3)2RuH2]Cl
Conditions | Yield |
---|---|
In diethyl ether Ar-atmosphere; -78°C; filtering, evapn.; elem. anal.; | A 81% B n/a |
antimony(III) fluoride
Dichlorosilane
A
difluorosilane
B
trifluorosilane
C
silicon tetrafluoride
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: H2; reaction in presence of SbCl5 at room temperature;; | A 80% B n/a C 10% |
antimony(III) fluoride
Dichlorosilane
A
difluorosilane
B
hydrogen
C
trifluorosilane
D
silicon tetrafluoride
Conditions | Yield |
---|---|
In neat (no solvent) fluorination of SiH2Cl2 with SbF3 at room temp. for a longer period of time;; | A 80% B n/a C n/a D n/a |
Conditions | Yield |
---|---|
In not given | 79% |
In not given | 79% |
Conditions | Yield |
---|---|
With C6H5MgBr In not given | 77% |
With C6H5MgBr In not given | 77% |
Conditions | Yield |
---|---|
In pentane at -70 - 35℃; for 16h; Temperature; Solvent; Inert atmosphere; Large scale; | 77% |
at 40℃; under 1277.21 - 2311.54 Torr; for 0.08h; Temperature; | 45.3 g |
Conditions | Yield |
---|---|
In hexane at -78 - 20℃; Inert atmosphere; | 76% |
Conditions | Yield |
---|---|
chloroplatinic acid | 72% |
Dichlorosilane
Conditions | Yield |
---|---|
With ammonia In dichloromethane byproducts: NH4Cl, H2; the silazane product formed in react. of SiH2Cl2 and gaseous NH3 in solvent, the product heated to 200°C for 1h under Ar then pyrolized at 1150°C for 12 under N2, Si formed only in traces; | 70% |
Conditions | Yield |
---|---|
In diethyl ether byproducts: NH4Cl, H2; the silazane product formed in react. of SiH2Cl2 and gaseous NH3 in solvent, the product heated to 200°C for 1h under Ar then pyrolized at 1150°C for 12 under N2, Si formed only in traces; | 70% |
Conditions | Yield |
---|---|
In diethyl ether byproducts: NaCl, B10H14; condensation of Et2O into borane at -196°C, then condensation of excess of Si-compd. at -196°C, stirring and warming to room temp.overnight; solvent removal (vac.), washing (i-Pr2O), extn. into THF, filtration, evapn. (vac.); | 70% |
Dichlorosilane
2.6-dimethylpiperidine
2,6-dimethylpiperidinochlorosilane
Conditions | Yield |
---|---|
With triethylamine In hexane at -20℃; | 66% |
1,4-di-tert-butyl-1,4-diazabutadiene
Dichlorosilane
Conditions | Yield |
---|---|
Stage #1: 1,4-di-tert-butyl-1,4-diazabutadiene With lithium In tetrahydrofuran at 0 - 20℃; for 4h; Stage #2: Dichlorosilane In tetrahydrofuran; toluene at -20 - 20℃; for 6h; | 65% |
Conditions | Yield |
---|---|
Stage #1: 1-dodecene; Dichlorosilane at -78 - 0℃; Inert atmosphere; Stage #2: dihydrogen hexachloroplatinate(IV) hexahydrate In isopropyl alcohol at 0 - 20℃; Inert atmosphere; | 62.5% |
Conditions | Yield |
---|---|
In diethyl ether H2SiCl2 and i-C3H7MgBr in ether; acidic hydrolysis;; | 60% |
In diethyl ether H2SiCl2 and i-C3H7MgBr in ether; acidic hydrolysis;; | 60% |
Dichlorosilane
A
{((CH3)3Si)(CH3)C2B4H4}Si
B
{((CH3)3Si)(CH3)C2H4B4}SiHCl
Conditions | Yield |
---|---|
With n-butyllithium In tetrahydrofuran addn. of a THF-soln. of 10.08mmol carborane to a soln. of 10.50mmol n-BuLi in THF in vac., react. with SiCl2H2 at -23°C for 2h, removal of THF in vac. at 0°C;; distn. at 0°C; elem. anal.; detn. by MS, IR, (1)H-, (11)B-, (13)C-, (29)Si-NMR;; | A n/a B 58% |
Dichlorosilane
zinc(II) carbonate
1,1,3,3,5,5,7,7,9,9,11,11-dodecahydro-cyclohexasiloxane
Conditions | Yield |
---|---|
In hexane Cooling; | 57.6% |
fac-(CO)3(2,2'-bipyridine)W(NCEt)
Dichlorosilane
fac-(CO)3(2,2'-bipyridine)W(H)(Cl)
Conditions | Yield |
---|---|
In dichloromethane N2; 1 equivalent; 10 min;; concd.; filtered; washed with cold CH2Cl2; recrystd. from acetone; elem. anal.;; | 54% |
Dichlorosilane
Conditions | Yield |
---|---|
In water at -40 - 20℃; for 1.5h; Inert atmosphere; | 51% |
o-Xylylene dichloride
Dichlorosilane
1-chloromethyl-2-(trichlorosilylmethyl)benzene
Conditions | Yield |
---|---|
triphenylphosphine In benzene | 50% |
(chloromethyl)triisopropoxysilane
Dichlorosilane
1,1,1,5,5,5-hexaisopropoxy-1,3,5-trisilapentane
Conditions | Yield |
---|---|
Stage #1: (chloromethyl)triisopropoxysilane With magnesium; ethylene dibromide In tetrahydrofuran at 25 - 35℃; for 8.5h; Stage #2: Dichlorosilane In tetrahydrofuran; n-heptane at 40 - 50℃; for 7h; | 50% |
Product Name: Dichlorosilane (CAS NO.4109-96-0)
Molecular Formula: Cl2H2Si
Molecular Weight: 101.01g/mol
Mol File: 4109-96-0.mol
Einecs: 223-888-3
Melting Point: -122 °C(lit.)
Boiling point: 8.3 °C at 760 mmHg
Flash Point: -37°C
Density: 1,22 g/cm3
Water Solubility: Decomposes
Stability: Stable. Extremely flammable; note very wide explosion limits. Reacts violently with water, alcohols, strong oxidizing agents, bases.
Enthalpy of Vaporization: 25 kJ/mol
Vapour Pressure: 1360 mmHg at 25°C
Product Categories: Chemical Synthesis; Compressed and Liquefied GasesMicro/Nanoelectronics; Electronic Chemicals; Gases; Synthetic Reagents
Dichlorosilane (CAS NO.4109-96-0) is used in semiconductor manufacturing, especially the epitaxy process as the silicon source.It is also used in the electronics industry in the poly-silicon epitaxial growth, as well as chemical vapor deposition silicon dioxide and silicon nitride.
TOXIC; may be fatal if inhaled or absorbed through skin. Contact with gas or liquefied gas may cause burns, severe injury and/or frostbite. Fire will produce irritating, corrosive and/or toxic gases. Runoff from fire control may cause pollution.
Organism | Test Type | Route | Reported Dose (Normalized Dose) | Effect | Source |
---|---|---|---|---|---|
mouse | LC50 | inhalation | 144ppm/4H (144ppm) | Archives of Toxicology. Vol. 70, Pg. 218, 1996. | |
rat | LC50 | inhalation | 215ppm (215ppm) | SENSE ORGANS AND SPECIAL SENSES: LACRIMATION: EYE LUNGS, THORAX, OR RESPIRATION: ACUTE PULMONARY EDEMA LUNGS, THORAX, OR RESPIRATION: DYSPNEA | Journal of Toxicological Sciences. Vol. 18, Pg. 394, 1993. |
Reported in EPA TSCA Inventory.
Flammable; may be ignited by heat, sparks or flames. May form explosive mixtures with air. Vapors from liquefied gas are initially heavier than air and spread along ground. Vapors may travel to source of ignition and flash back. Some of these materials may react violently with water. Cylinders exposed to fire may vent and release toxic and flammable gas through pressure relief devices. Containers may explode when heated. Ruptured cylinders may rocket. Runoff may create fire or explosion hazard.
Safety Information of Dichlorosilane (CAS NO.4109-96-0):
Hazard Codes: F+,T
Risk Statements: 12-14-23-34
12: Extremely Flammable
14: Reacts violently with water
23: Toxic by inhalation
34: Causes burns
Safety Statements: 26-36/37/39-45
26: In case of contact with eyes, rinse immediately with plenty of water and seek medical advice
36: Wear suitable protective clothing
37: Wear suitable gloves
39: Wear eye/face protection
45: In case of accident or if you feel unwell, seek medical advice immediately (show label where possible)
Dichlorosilane ,its CAS NO. is 4109-96-0,the synonyms is Dichloro-silan ; Siliconchloridehydride .
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