A
tin
B
{((CH3)3Si)2NSnCl2NSi(CH3)3}2C6H4
Conditions | Yield |
---|---|
In diethyl ether; benzene-d6 7 d at 20°C; | A n/a B 100% |
tin
Conditions | Yield |
---|---|
With aluminium In neat (no solvent) byproducts: Al2O3; reaction of SnO2 and Al to Sn and Al2O3 after passing in over a blower flame;; | 96% |
With Al In neat (no solvent) byproducts: Al2O3; reaction of SnO2 and Al to Sn and Al2O3 after passing in over a blower flame;; | 96% |
With carbon monoxide In neat (no solvent) intermediate formation of solid SnO at reduction with CO at 600-850°C;; |
tin
Conditions | Yield |
---|---|
With iron In not given pptn.; no Sb, no As, 0.16% Fe, 0.053% Al; | 95% |
With Fe In not given pptn.; no Sb, no As, 0.16% Fe, 0.053% Al; | 95% |
With hydrogenchloride; aluminium In hydrogenchloride leaching (HCl soln.) at ambient temp.; pptn. (Al plates); washing; melting; content: 0.89% Sb, 0.036% As, 0.022% Fe, 0.024% Al; | 94.5% |
With HCl; Al In hydrogenchloride leaching (HCl soln.) at ambient temp.; pptn. (Al plates); washing; melting; content: 0.89% Sb, 0.036% As, 0.022% Fe, 0.024% Al; | 94.5% |
tin
Conditions | Yield |
---|---|
With chromium In melt byproducts: CrF2; | 95% |
In hydrogen fluoride Electrolysis; Pt cathode, Sn anode; 29-30°C, 1 A/dm**2 with different additives; | |
With lithium fluoride In neat (no solvent) byproducts: Li3VF6; formation of Sn and Li3VF6 in a mixture with LiF with metallic V;; |
Conditions | Yield |
---|---|
at 40℃; for 16h; Temperature; | 95% |
dibutyltin dibenzoate
A
tin
C
(Benzoyloxy)tributylstannan
D
dibutyltin
E
cyclopenta-1,3-diene
Conditions | Yield |
---|---|
In toluene molar ratio Cp2V/Sn-compound 1/2, sealed ampoule, 20°C, 24 h; | A n/a B 94% C n/a D n/a E 84% |
Conditions | Yield |
---|---|
In tetrahydrofuran a soln. of Sn compd. added to a soln. of ligand at room temp.; filtered, crystd. at room temp. for 1 h; elem. anal.; | A n/a B 94% |
1,2-dimethoxyethane
diphenyltin(IV) dichloride
A
tin
B
YbCl2(tetrahydrofuran)2
Conditions | Yield |
---|---|
In tetrahydrofuran absence of air; stirring (room temp., 12 h), evapn. (vac.), dissoln. in DME, then 10 h (room temp.); crystn. (-10°C, 24 h); elem. anal.; | A 81.94% B 92.54% C 75.39% |
Conditions | Yield |
---|---|
With THF In tetrahydrofuran absence of air; stirring (room temp., 30 h); filtration off of YbCl2(THF)2 and Sn, evapn. (vac.), washing (hexane), recrystn. (THF); | A 52.75% B 65.59% C 89.53% |
bis(pentamethylcyclopentadienyl)Sn
tin
Conditions | Yield |
---|---|
With potassium In tetrahydrofuran byproducts: pentamethylcyclopentadiene; a stoich. amt. of cut-up K was added under Ar to a soln. of stannocene in THF, mixt. was stirred at room temp. for 45 min; no initial stannocene was observed after the reaction; solvent was evapd., residue was extd. with petroleum ether, ext. was analyzed for remaining stannocene by (1)H NMR, insoluble material was treated with MeOH, elemental Sn was filtered and dried, soln. was examined for C5Me5H spectroscopically; | 89% |
With sodium In tetrahydrofuran byproducts: pentamethylcyclopentadiene; a stoich. amt. of cut-up Na was added under Ar to a soln. of stannocene in THF, mixt. was stirred at room temp. for 25 h; no initial stannocene was observed after the reaction; solvent was evapd., residue was extd. with petroleum ether, ext. was analyzed for remaining stannocene by (1)H NMR, insoluble material was treated with MeOH, elemental Sn was filtered and dried, soln. was examined for C5Me5H spectroscopically; | 81% |
With lithium In tetrahydrofuran byproducts: pentamethylcyclopentadiene; a stoich. amt. of cut-up Li was added under Ar to a soln. of stannocene in THF, mixt. was stirred at room temp. for 7 d; 63% of initial material remained unchanged; solvent was evapd., residue was extd. with petroleum ether, ext. was analyzed for remaining stannocene by (1)H NMR, insoluble material was treated with MeOH, elemental Sn was filtered and dried, soln. was examined for C5Me5H spectroscopically; | <1 |
Conditions | Yield |
---|---|
In 1,2-dimethoxyethane Irradiation (UV/VIS); under Ar; mole ratio NaBPh4 : SnCl2 = 2 : 1; irradn. (254 nm) for 8 h gave deposition of Sn; deposit sepd., washed with acetone and water, and dried in vac. to give pure Sn; | 80% |
Conditions | Yield |
---|---|
In melt placing of mixt. of Si with SnF2 (molar ratio SnF2:Si=2.00) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.00 h at 250°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying; | A 76.8% B n/a |
trimethyltin(IV)chloride
A
tin
B
hexamethyldistannane
C
trimethylstannane
Conditions | Yield |
---|---|
With NdI2; THF In tetrahydrofuran Me3SnCl in THF added under stirring at -60°C to NdI2 in THF; warmed to room temp.; stirred for 30 min; filtered off; dried; dissolved in water again; analyzed by GLC; | A 74% B 11% C 7% |
Conditions | Yield |
---|---|
In tetrahydrofuran a soln. of Sn compd. added to a soln. of ligand at -78°C; filtered, evapd. (vac.), dissolved in MeCN, crystd. at room temp. for 1 h; elem. anal.; | A n/a B 72% |
dibutyltin dibenzoate
A
tin
C
(Benzoyloxy)tributylstannan
D
cyclopenta-1,3-diene
Conditions | Yield |
---|---|
In toluene molar ratio Cp2V/Sn-compound 1/1, sealed ampoule, 20°C, 24 h; ppt. of V-complex washing (toluene), drying; elem. anal.; solvent removal, fractioning; | A n/a B 67% C 28% D 37% |
Conditions | Yield |
---|---|
In melt placing of mixt. of Zr with SnF2 (molar ratio SnF2:Zr=2.10) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.50 h at 240°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying; | A 66.5% B n/a |
Conditions | Yield |
---|---|
byproducts: H2; 400°C for 4 h in closed tube; | A n/a B 57% C 4% D 21.5% |
other Radiation; X-ray; | |
Irradiation (UV/VIS); 80°C; |
tin
Conditions | Yield |
---|---|
With sodium stannate(II) at 20℃; for 120h; | 54% |
With sodium hydroxide In sodium hydroxide Electrochem. Process; Sn electrodeposition from soln. of SnO in 4 M NaOH on Sn working electrode; Pt counter electrode, Ag/AgCl/satd. KCl reference eelctrode; | |
With silicon In neat (no solvent) Electric Arc; redn. of SnO by Si;; |
sodium tetraphenyl borate
copper(ll) bromide
A
tin
B
copper
Conditions | Yield |
---|---|
In 1,2-dimethoxyethane Irradiation (UV/VIS); under Ar; mole ratios NaBPh4 : SnCl2 : CuBr2 = 4 : 1 : 1; irradn. (254 nm) for 14 h gave deposition of Co and Cu; | A 49% B 49% |
tri-n-butyl-tin hydride
13,13-Dimethyl-1,10-diphenyl-13-silatricyclo<8.2.1.0Δ2,9>trideca-11-en
A
tin
B
bis(tri-n-butyltin)
C
tetra-n-butyltin(IV)
D
(tri(n-butyl)stannyl)dimethylsilane
Conditions | Yield |
---|---|
In neat (no solvent) (Ar); 2.5 h at 200°C; dissolved (C6D6); Sn septd.; not isolated; detected by NMR; gas chromatography; | A 14% B 10% C <1 D 45% |
carbon oxide sulfide
bis(bis(trimethylsilyl)amido)tin(II)
A
tin
B
Sn4(μ4-O)(μ2-OSiMe3)5(η1-N=C=S)
Conditions | Yield |
---|---|
In hexane byproducts: ((CH3)3Si)2NH, (CH3)3SiOSi(CH3)3, (CH3)3SiNCS; (Ar); soln. of tin complex in hexane was placed in bomb at -100°C, OCS was added, stirred and warmed to 25°C, stirred overnight; cooled to -78°C excess OCS was removed in vac., filtered, washed with pentane, crystal were obtained from filtrate, elem. anal.; | A n/a B 39% |
Conditions | Yield |
---|---|
In melt placing of mixt. of V with SnF2 (molar ratio SnF2:V=2.68) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.50 h at 240°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying; | A 21.6% B n/a |
Conditions | Yield |
---|---|
In melt placing of mixt. of Nb with SnF2 (molar ratio SnF2:Nb=6.42) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.50 h at 240°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying; | A 19.8% B n/a |
Conditions | Yield |
---|---|
In melt Kinetics; placing of mixt. of Ti with SnF2 (molar ratio SnF2:Ti=4.04) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.00 h at 230°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying; | A 13.8% B n/a |
Conditions | Yield |
---|---|
In melt placing of mixt. of Ta with SnF2 (molar ratio SnF2:Ta=1.46) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.00 h at 240°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying; | A 9.2% B n/a |
Conditions | Yield |
---|---|
With KC8 In tetrahydrofuran add. of Cr(CO)6 to a suspension of KC8 under Ar at -70°C, stirring (-70°C, 1 h; 0°C, 2 h), addn. of anhydr. SnCl2 at -70°C, addn. of cryptand after 0.5 h stirring, warming to 0°C; filtn. through Kieselgur, concg. in high-vac., layering (15°C, Et2O, pentane), after 7 days Sn seperates; | A n/a B n/a C 7% |
Conditions | Yield |
---|---|
In melt placing of mixt. of Cr with SnF2 (molar ratio SnF2:Cr=2.05) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.75 h at 230°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying; | A 6.8% B n/a |
tin
Conditions | Yield |
---|---|
In melt in presence of WO3; | 1.5% |
In melt in presence of WO3; | 1.5% |
With anthracite 850-900°C; |
Conditions | Yield |
---|---|
In melt placing of mixt. of Al with SnF2 (molar ratio SnF2:Al=1.65) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.00 h at 250°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying; | A 1.5% B n/a |
Conditions | Yield |
---|---|
SnO was oxidized at 612-1030 K; | A 1% B n/a |
Conditions | Yield |
---|---|
With {(C2H5)4N}Br In acetonitrile Electrolysis; Sn-cathode, 50°C; | 100% |
With {(C2H5)4N}Br In acetonitrile Electrolysis; Sn-cathode, 50°C; | 100% |
In water; acetonitrile Electrolysis; Sn-cathode, Pt-anode, 0.25 M Et4NClO4 in MeCN/water=7:1, 25°C, 10mA/cm**(-2); gas chromy.; |
Conditions | Yield |
---|---|
In further solvent(s) High Pressure; prepd. under solvothermal conditions; reactants weighted in ratio of 1 Ni:1 Sn:3 S, heated in sealed Teflon-lined steel autoclave in pure 1,2-diaminopropane for 7 d at 140°C; elem. anal.; | 100% |
Conditions | Yield |
---|---|
at 250 - 650℃; for 20h; Sealed tube; | 100% |
Conditions | Yield |
---|---|
at 590 - 900℃; for 120h; Inert atmosphere; | 100% |
Conditions | Yield |
---|---|
at 590 - 900℃; for 120h; Inert atmosphere; | 100% |
Conditions | Yield |
---|---|
at 590 - 900℃; for 120h; Inert atmosphere; | 100% |
Conditions | Yield |
---|---|
at 590 - 900℃; for 120h; Inert atmosphere; | 100% |
Conditions | Yield |
---|---|
at 590 - 900℃; for 120h; Inert atmosphere; | 100% |
Conditions | Yield |
---|---|
at 590 - 900℃; for 120h; Inert atmosphere; | 100% |
Conditions | Yield |
---|---|
at 590 - 900℃; for 120h; Inert atmosphere; | 100% |
Conditions | Yield |
---|---|
at 550 - 950℃; for 240h; Inert atmosphere; | 100% |
Conditions | Yield |
---|---|
at 350 - 950℃; for 240h; Inert atmosphere; | 100% |
Conditions | Yield |
---|---|
at 590 - 900℃; for 120h; Inert atmosphere; | 100% |
Conditions | Yield |
---|---|
at 590 - 900℃; for 120h; Inert atmosphere; | 100% |
Conditions | Yield |
---|---|
at 590 - 900℃; for 120h; Inert atmosphere; | 100% |
Conditions | Yield |
---|---|
Stage #1: bismuth; tin; lithium sulfide; sulfur at 800℃; under 0.00150015 Torr; for 10h; Inert atmosphere; Glovebox; Sealed tube; Stage #2: at 800℃; for 26h; | 100% |
tin
1-methyl-3-octylimidazolium tribromide
Conditions | Yield |
---|---|
at 125℃; for 72h; Schlenk technique; | 100% |
tin
n-Butyl chloride
A
dibutyltin chloride
B
tributyltin chloride
Conditions | Yield |
---|---|
With catalyst: dicyclohexyl-18-crown-6/n-C4H9I In N,N-dimethyl-formamide 120°C; 24 h; excess KI;; analyzed by GLC;; | A 99% B 1% |
With catalyst: dibenzo-18-crown-6/n-C4H9I In N,N-dimethyl-formamide 120°C; 24 h; excess KI;; analyzed by GLC;; | A 98% B 2% |
With catalyst: dibenzo-18-crown-6/n-C8H17I In N,N-dimethyl-formamide 120°C; 24 h; excess KI;; analyzed by GLC;; | A 98% B 2% |
Conditions | Yield |
---|---|
With hydrogenchloride In water at 170℃; Inert atmosphere; | 99% |
1260°C; | |
I2 in H2 stream; |
Conditions | Yield |
---|---|
With oxygen In dimethyl sulfoxide metal. Sn under O2 atm. treated with DMSO and triflic acid (4 equiv.) in3 portions, heated at 100°C for 24 h; | 99% |
Conditions | Yield |
---|---|
With oxygen In dimethyl sulfoxide metal. Sn under O2 atm. treated with DMSO and triflimidic acid (4 equiv.) in 3 portions, heated at 100°C for 7 h; | 99% |
Conditions | Yield |
---|---|
In neat (no solvent) mixt. of Ba, Sn, Se in stoich. ratio 2:1:5 was placed into fused silica tube; sealed under vac.; put into furnace; heated to 750°C within3 ds; kept at 750°C for 4 ds; cooled to 700°C within 10 m in; annealed at 650°C for 4 ds; cooled to room temp. within 4 ds; | 99% |
Stage #1: selenium; tin; barium at 750℃; for 150h; Sealed tube; Stage #2: at 650℃; for 100h; |
Conditions | Yield |
---|---|
In neat (no solvent, solid phase) mixt. of Sm, Ni, Sn loaded into Ta tube, heated at 970°C for 36 h, quenched in water, annealed at 700°C for 15 d; | 99% |
In neat (no solvent, solid phase) mixt. of Sm, Ni, Sn loaded into Nb tube, heated under dynamic vac. at 300°C for 1 d, heated at 950°C for 5 d, cooled to room temp.at 15°C/h; |
Conditions | Yield |
---|---|
In toluene; acetonitrile under dry N2, finely divided metal and o-quinone refluxed in toluene (24 h), filtration, addn. of Et4NBr in minimum amount of CH3CN (light-brown solid deposit), stirred (2 h, room temp.), addn. of diethyl ether, pptn.; filtration, evapn.; elem. anal.; | 99% |
Conditions | Yield |
---|---|
In toluene; acetonitrile under dry N2, finely divided metal and o-quinone refluxed in toluene (24 h), filtration, addn. of Ph4PCl in minimum amount of CH3CN (light-brown solid deposit), stirred (2 h, room temp.), addn. of diethyl ether, pptn.; filtration, evapn.; elem. anal.; | 99% |
Conditions | Yield |
---|---|
With lithium chloride In further solvent(s) Electrolysis; (N2 or Ar); using of Sn as anode and stainless steel plate as cathode; electrolysis for 1-1.5 h with soln. of electrolyte LiCl in MeOCH2CH2OH; removal of methyl cellosolve in vac., sepn. from LiCl by extn. with toluene; distn. in vac.; elem. anal.; | 99% |
Electrochem. Process; Dissolution of Sn anode at 110-220 V and 0.2-0.5 A.; Elem. anal.; |
Conditions | Yield |
---|---|
In neat (no solvent) mixt. Cs2Se, Sn, As2S3, and Se was heated at 500°C for 4 days andthen cooled to 250°C at rate 5°C/h followeed by rapid coo ling to room temp.; products were washed with DMF and ether; | 99% |
In neat (no solvent) mixt. Cs2Se, Sn, As2S3, and Se was heated at 550°C for 4 days andthen cooled to 250°C at rate 5°C/h followeed by rapid coo ling to room temp.; products were washed with DMF and ether; |
tin
copper
Conditions | Yield |
---|---|
at 399.84 - 699.84℃; for 408h; Sealed tube; | 98% |
In melt sealed in evacuated quartz ampoule; placed in vertical furnace; heated to 1150°C at 40°C/h; kept for 24 h, cooled at 10°C/hto 800°C, at 1°C/h to 640°C, to 500°C at 5. degree.C/h, annealed for 120 h; | |
In neat (no solvent) vac; 1350 K; |
Conditions | Yield |
---|---|
In toluene 1.5 equiv. of disulfide, 0.5 equiv. of I2 and Sn metal were refluxed in toluene for 4 h; mixt. was filtered through Celite, soln. was concd. in vac., cooled in ice-bath, solid was filtered off, washed with petroleum ether (60-80 °C), dried in vac., elem. anal.; | 98% |
Reported in EPA TSCA Inventory.
OSHA PEL: Organic Compounds: TWA 0.1 mg(Sn)/m3 (skin); Inorganic Compounds (except oxides): TWA 2 mg/m3
ACGIH TLV: TWA metal, oxide, and inorganic compounds (except SnH4) as Sn 2 mg/m3; organic compounds TWA 0.1 mg(Sn)/m3; STEL 0.2 mg(Sn)/m3 (skin)
DFG MAK: Inorganic 2 mg/m3, organic 0.1 mg/m3
NIOSH REL: (Organotin Compounds) TWA 0.1 mg(Sn)/m3
For occupational chemical analysis use OSHA: #ID-125G or NIOSH: Elements (ICP) 7300; METALS in Urine (ICP) 8310.
The Tin, with the cas registry number 7440-31-5, is a kind of malleable, ductile, and highly crystalline silvery-white metal. This is sensitive and soluble in concentrated hydrochloric [chlorhydric] acid, sulfuric acid, aqua regia, concentrated nitric acid while is slow-soluble in cold diluted hydrochloric acid, diluted hydrochloric acid and hot dilute sulphuric acid.
Following are the basic information of this chemical: It is stable in air but is incompatible with strong oxidizing agents. What's more, its product categories are including Inorganics; Catalysis and Inorganic Chemistry; Chemical Synthesis; TinMetal and Ceramic Science; Metal and Ceramic Science; Metals; Tin; ACS GradeChemical Synthesis; Essential Chemicals; Routine Reagents; 50: Sn; TinNanomaterials; Materials Science; Nanomaterials; Nanoparticles: Metals and Metal AlloysMetal and Ceramic Science; Nanopowders and Nanoparticle Dispersions; AA Standard SolutionsSpectroscopy; AAS.
The characteristics of this chemical are as below: (1)#H bond acceptors: 0; (2)#H bond donors: 0; (3)Exact Mass: 119.902197; (4)MonoIsotopic Mass: 119.902197; (5)Topological Polar Surface Area: 0; (6)Heavy Atom Count: 1; (7)Covalently-Bonded Unit Count: 1.
The production method is as below: Firstly prepare the material of stannic chloride, and then hydrolyze to stannichydroxide after the vacuum distillation; Secondly, access the air to restore and then to get the high purified tin products. The reaction equation is below: Sn(OH)2+H2→Sn+2H2O.
As to its usage, it is widely applied in many ways. It could be used as high purity reagent in electronic industry, and as the reagent to test arsenic (As) and the phosphate, and then as the organic synthesis; Then it could also be usd in producing electrical carbon product, friction material, oil bearing and powder metallurgy material of construction; Lastly, it could be very useful in reducing agent.
When you are using this chemical, please be very cautious, and then take some measure to protect yourself. This is irritating to eyes, respiratory system and skin and then it is flammable. Therefore, you should take the following instructions. Wear suitable protective clothing, gloves and eye/face protection and avoid contacting with skin and eyes. If in case of contacting with eyes, rinse immediately with plenty of water and seek medical advice. Besides, take precautionary measures against static discharges and do not breathe dust while using. When to keep, keep this chemical away from sources of ignition.
Additionally, you could convert the following datas into the molecular structure:
(1)SMILES:[Sn]
(2)InChI:InChI=1/Sn
(3)InChIKey:ATJFFYVFTNAWJD-UHFFFAOYAJ
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