Product Name

  • Name

    Tin powder

  • EINECS 231-141-8
  • CAS No. 7440-31-5
  • Article Data856
  • CAS DataBase
  • Density 7.3 g/cm3
  • Solubility soluble in water
  • Melting Point 231.9 °C(lit.)
  • Formula Sn
  • Boiling Point 2270 °C(lit.)
  • Molecular Weight 122.742
  • Flash Point 2270°C
  • Transport Information UN 3264 8/PG 2
  • Appearance silver-white to grey powder or lump
  • Safety 26-24/25-22-36/37/39-33-16-36/37
  • Risk Codes 36/37/38-36/37-11-36/38
  • Molecular Structure Molecular Structure of 7440-31-5 (Tin powder)
  • Hazard Symbols IrritantXi,FlammableF
  • Synonyms Stannum;Tin
  • PSA 0.00000
  • LogP -0.91620

Synthetic route

2C6H18NSi2(1-)*C12H22N2Si2(2-)*2Sn(2+)

2C6H18NSi2(1-)*C12H22N2Si2(2-)*2Sn(2+)

tin(ll) chloride

tin(ll) chloride

A

tin
7440-31-5

tin

B

{((CH3)3Si)2NSnCl2NSi(CH3)3}2C6H4
157201-33-7

{((CH3)3Si)2NSnCl2NSi(CH3)3}2C6H4

Conditions
ConditionsYield
In diethyl ether; benzene-d6 7 d at 20°C;A n/a
B 100%
tin(IV) oxide

tin(IV) oxide

Conditions
ConditionsYield
With aluminium In neat (no solvent) byproducts: Al2O3; reaction of SnO2 and Al to Sn and Al2O3 after passing in over a blower flame;;96%
With Al In neat (no solvent) byproducts: Al2O3; reaction of SnO2 and Al to Sn and Al2O3 after passing in over a blower flame;;96%
With carbon monoxide In neat (no solvent) intermediate formation of solid SnO at reduction with CO at 600-850°C;;
calcium metastannate

calcium metastannate

Conditions
ConditionsYield
With iron In not given pptn.; no Sb, no As, 0.16% Fe, 0.053% Al;95%
With Fe In not given pptn.; no Sb, no As, 0.16% Fe, 0.053% Al;95%
With hydrogenchloride; aluminium In hydrogenchloride leaching (HCl soln.) at ambient temp.; pptn. (Al plates); washing; melting; content: 0.89% Sb, 0.036% As, 0.022% Fe, 0.024% Al;94.5%
With HCl; Al In hydrogenchloride leaching (HCl soln.) at ambient temp.; pptn. (Al plates); washing; melting; content: 0.89% Sb, 0.036% As, 0.022% Fe, 0.024% Al;94.5%
stannous fluoride

stannous fluoride

Conditions
ConditionsYield
With chromium In melt byproducts: CrF2;95%
In hydrogen fluoride Electrolysis; Pt cathode, Sn anode; 29-30°C, 1 A/dm**2 with different additives;
With lithium fluoride In neat (no solvent) byproducts: Li3VF6; formation of Sn and Li3VF6 in a mixture with LiF with metallic V;;
sodium stannate(II)

sodium stannate(II)

tin(II) oxide

tin(II) oxide

Conditions
ConditionsYield
at 40℃; for 16h; Temperature;95%
vanadocene

vanadocene

dibutyltin dibenzoate
5847-54-1

dibutyltin dibenzoate

A

tin
7440-31-5

tin

B

2C5H5(1-)*2V(3+)*4OCOC6H5(1-) = [(C5H5)V(OCOC6H5)2]2

2C5H5(1-)*2V(3+)*4OCOC6H5(1-) = [(C5H5)V(OCOC6H5)2]2

C

(Benzoyloxy)tributylstannan
4342-36-3

(Benzoyloxy)tributylstannan

D

dibutyltin
1191-48-6

dibutyltin

E

cyclopenta-1,3-diene
542-92-7

cyclopenta-1,3-diene

Conditions
ConditionsYield
In toluene molar ratio Cp2V/Sn-compound 1/2, sealed ampoule, 20°C, 24 h;A n/a
B 94%
C n/a
D n/a
E 84%
3,4-dimercaptotoluene
496-74-2

3,4-dimercaptotoluene

tin(II) dimethylamide
55853-40-2

tin(II) dimethylamide

A

tin
7440-31-5

tin

[Me2NH2]2[Sn(toluene-3,4-dithiolato)3]

[Me2NH2]2[Sn(toluene-3,4-dithiolato)3]

Conditions
ConditionsYield
In tetrahydrofuran a soln. of Sn compd. added to a soln. of ligand at room temp.; filtered, crystd. at room temp. for 1 h; elem. anal.;A n/a
B 94%
1,2-dimethoxyethane
110-71-4

1,2-dimethoxyethane

ytterbium

ytterbium

diphenyltin(IV) dichloride
1135-99-5

diphenyltin(IV) dichloride

A

tin
7440-31-5

tin

B

YbCl2(tetrahydrofuran)2
145447-65-0

YbCl2(tetrahydrofuran)2

C

Yb2Cl2(CH3OCH2CH2OCH3)6(2+)*2((C6H5)3Sn)3Sn(1-)={Yb2Cl2(CH3OCH2CH2OCH3)6}{((C6H5)3Sn)3Sn}2

Yb2Cl2(CH3OCH2CH2OCH3)6(2+)*2((C6H5)3Sn)3Sn(1-)={Yb2Cl2(CH3OCH2CH2OCH3)6}{((C6H5)3Sn)3Sn}2

Conditions
ConditionsYield
In tetrahydrofuran absence of air; stirring (room temp., 12 h), evapn. (vac.), dissoln. in DME, then 10 h (room temp.); crystn. (-10°C, 24 h); elem. anal.;A 81.94%
B 92.54%
C 75.39%
phenyltin trichloride
1124-19-2

phenyltin trichloride

ytterbium

ytterbium

A

tin
7440-31-5

tin

bis(triphenylstannyl)tetrakis(tetrahydrofuran)ytterbium

bis(triphenylstannyl)tetrakis(tetrahydrofuran)ytterbium

C

YbCl2(tetrahydrofuran)2
145447-65-0

YbCl2(tetrahydrofuran)2

Conditions
ConditionsYield
With THF In tetrahydrofuran absence of air; stirring (room temp., 30 h); filtration off of YbCl2(THF)2 and Sn, evapn. (vac.), washing (hexane), recrystn. (THF);A 52.75%
B 65.59%
C 89.53%
bis(pentamethylcyclopentadienyl)Sn
68757-81-3

bis(pentamethylcyclopentadienyl)Sn

Conditions
ConditionsYield
With potassium In tetrahydrofuran byproducts: pentamethylcyclopentadiene; a stoich. amt. of cut-up K was added under Ar to a soln. of stannocene in THF, mixt. was stirred at room temp. for 45 min; no initial stannocene was observed after the reaction; solvent was evapd., residue was extd. with petroleum ether, ext. was analyzed for remaining stannocene by (1)H NMR, insoluble material was treated with MeOH, elemental Sn was filtered and dried, soln. was examined for C5Me5H spectroscopically;89%
With sodium In tetrahydrofuran byproducts: pentamethylcyclopentadiene; a stoich. amt. of cut-up Na was added under Ar to a soln. of stannocene in THF, mixt. was stirred at room temp. for 25 h; no initial stannocene was observed after the reaction; solvent was evapd., residue was extd. with petroleum ether, ext. was analyzed for remaining stannocene by (1)H NMR, insoluble material was treated with MeOH, elemental Sn was filtered and dried, soln. was examined for C5Me5H spectroscopically;81%
With lithium In tetrahydrofuran byproducts: pentamethylcyclopentadiene; a stoich. amt. of cut-up Li was added under Ar to a soln. of stannocene in THF, mixt. was stirred at room temp. for 7 d; 63% of initial material remained unchanged; solvent was evapd., residue was extd. with petroleum ether, ext. was analyzed for remaining stannocene by (1)H NMR, insoluble material was treated with MeOH, elemental Sn was filtered and dried, soln. was examined for C5Me5H spectroscopically;<1
sodium tetraphenyl borate
143-66-8

sodium tetraphenyl borate

tin(ll) chloride

tin(ll) chloride

Conditions
ConditionsYield
In 1,2-dimethoxyethane Irradiation (UV/VIS); under Ar; mole ratio NaBPh4 : SnCl2 = 2 : 1; irradn. (254 nm) for 8 h gave deposition of Sn; deposit sepd., washed with acetone and water, and dried in vac. to give pure Sn;80%
stannous fluoride

stannous fluoride

silicon
7440-21-3

silicon

A

tin
7440-31-5

tin

B

silicon tetrafluoride
7783-61-1

silicon tetrafluoride

Conditions
ConditionsYield
In melt placing of mixt. of Si with SnF2 (molar ratio SnF2:Si=2.00) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.00 h at 250°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 76.8%
B n/a
trimethyltin(IV)chloride
1066-45-1

trimethyltin(IV)chloride

A

tin
7440-31-5

tin

B

hexamethyldistannane
661-69-8

hexamethyldistannane

C

trimethylstannane
1631-73-8

trimethylstannane

Conditions
ConditionsYield
With NdI2; THF In tetrahydrofuran Me3SnCl in THF added under stirring at -60°C to NdI2 in THF; warmed to room temp.; stirred for 30 min; filtered off; dried; dissolved in water again; analyzed by GLC;A 74%
B 11%
C 7%
tin(II) dimethylamide
55853-40-2

tin(II) dimethylamide

1,2-benzenedithiole
17534-15-5

1,2-benzenedithiole

A

tin
7440-31-5

tin

B

[Me2NH2]2[Sn(benzene-1,2-dithiolato)3]

[Me2NH2]2[Sn(benzene-1,2-dithiolato)3]

Conditions
ConditionsYield
In tetrahydrofuran a soln. of Sn compd. added to a soln. of ligand at -78°C; filtered, evapd. (vac.), dissolved in MeCN, crystd. at room temp. for 1 h; elem. anal.;A n/a
B 72%
vanadocene

vanadocene

dibutyltin dibenzoate
5847-54-1

dibutyltin dibenzoate

A

tin
7440-31-5

tin

B

2C5H5(1-)*2V(3+)*4OCOC6H5(1-) = [(C5H5)V(OCOC6H5)2]2

2C5H5(1-)*2V(3+)*4OCOC6H5(1-) = [(C5H5)V(OCOC6H5)2]2

C

(Benzoyloxy)tributylstannan
4342-36-3

(Benzoyloxy)tributylstannan

D

cyclopenta-1,3-diene
542-92-7

cyclopenta-1,3-diene

Conditions
ConditionsYield
In toluene molar ratio Cp2V/Sn-compound 1/1, sealed ampoule, 20°C, 24 h; ppt. of V-complex washing (toluene), drying; elem. anal.; solvent removal, fractioning;A n/a
B 67%
C 28%
D 37%
stannous fluoride

stannous fluoride

zirconium
7440-67-7

zirconium

A

tin
7440-31-5

tin

B

zirconium(IV) fluoride
851363-60-5, 7783-64-4

zirconium(IV) fluoride

Conditions
ConditionsYield
In melt placing of mixt. of Zr with SnF2 (molar ratio SnF2:Zr=2.10) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.50 h at 240°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 66.5%
B n/a
tetraethyltin
597-64-8

tetraethyltin

A

tin
7440-31-5

tin

B

ethane
74-84-0

ethane

C

ethene
74-85-1

ethene

D

n-butane
106-97-8

n-butane

Conditions
ConditionsYield
byproducts: H2; 400°C for 4 h in closed tube;A n/a
B 57%
C 4%
D 21.5%
other Radiation; X-ray;
Irradiation (UV/VIS); 80°C;
tin(II) oxide

tin(II) oxide

Conditions
ConditionsYield
With sodium stannate(II) at 20℃; for 120h;54%
With sodium hydroxide In sodium hydroxide Electrochem. Process; Sn electrodeposition from soln. of SnO in 4 M NaOH on Sn working electrode; Pt counter electrode, Ag/AgCl/satd. KCl reference eelctrode;
With silicon In neat (no solvent) Electric Arc; redn. of SnO by Si;;
tri-n-butyl-tin hydride
688-73-3

tri-n-butyl-tin hydride

13,13-Dimethyl-1,10-diphenyl-13-silatricyclo<8.2.1.0Δ2,9>trideca-11-en
86840-61-1

13,13-Dimethyl-1,10-diphenyl-13-silatricyclo<8.2.1.0Δ2,9>trideca-11-en

A

tin
7440-31-5

tin

B

bis(tri-n-butyltin)
813-19-4

bis(tri-n-butyltin)

C

tetra-n-butyltin(IV)
1461-25-2

tetra-n-butyltin(IV)

D

(tri(n-butyl)stannyl)dimethylsilane
27490-31-9

(tri(n-butyl)stannyl)dimethylsilane

Conditions
ConditionsYield
In neat (no solvent) (Ar); 2.5 h at 200°C; dissolved (C6D6); Sn septd.; not isolated; detected by NMR; gas chromatography;A 14%
B 10%
C <1
D 45%
carbon oxide sulfide
463-58-1

carbon oxide sulfide

bis(bis(trimethylsilyl)amido)tin(II)
55147-78-9

bis(bis(trimethylsilyl)amido)tin(II)

A

tin
7440-31-5

tin

B

Sn4(μ4-O)(μ2-OSiMe3)5(η1-N=C=S)
1257217-06-3

Sn4(μ4-O)(μ2-OSiMe3)5(η1-N=C=S)

Conditions
ConditionsYield
In hexane byproducts: ((CH3)3Si)2NH, (CH3)3SiOSi(CH3)3, (CH3)3SiNCS; (Ar); soln. of tin complex in hexane was placed in bomb at -100°C, OCS was added, stirred and warmed to 25°C, stirred overnight; cooled to -78°C excess OCS was removed in vac., filtered, washed with pentane, crystal were obtained from filtrate, elem. anal.;A n/a
B 39%
stannous fluoride

stannous fluoride

vanadium
7440-62-2

vanadium

A

tin
7440-31-5

tin

B

vanadium(III) fluoride
10049-12-4

vanadium(III) fluoride

Conditions
ConditionsYield
In melt placing of mixt. of V with SnF2 (molar ratio SnF2:V=2.68) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.50 h at 240°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 21.6%
B n/a
stannous fluoride

stannous fluoride

niobium

niobium

A

tin
7440-31-5

tin

B

niobium pentafluoride
7783-68-8

niobium pentafluoride

Conditions
ConditionsYield
In melt placing of mixt. of Nb with SnF2 (molar ratio SnF2:Nb=6.42) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.50 h at 240°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 19.8%
B n/a
stannous fluoride

stannous fluoride

titanium
7440-32-6

titanium

A

tin
7440-31-5

tin

B

titanium(IV) fluoride
7783-63-3

titanium(IV) fluoride

Conditions
ConditionsYield
In melt Kinetics; placing of mixt. of Ti with SnF2 (molar ratio SnF2:Ti=4.04) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.00 h at 230°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 13.8%
B n/a
tantalum

tantalum

stannous fluoride

stannous fluoride

A

tin
7440-31-5

tin

B

tantalum pentafluoride
7783-71-3

tantalum pentafluoride

Conditions
ConditionsYield
In melt placing of mixt. of Ta with SnF2 (molar ratio SnF2:Ta=1.46) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.00 h at 240°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 9.2%
B n/a
chromium(0) hexacarbonyl
199620-14-9, 13007-92-6

chromium(0) hexacarbonyl

[2.2.2]cryptande
23978-09-8

[2.2.2]cryptande

tin(ll) chloride

tin(ll) chloride

A

tin
7440-31-5

tin

B

2K(1+)*2C18H36N2O6*Cl2Sn(Cr(CO)5)2(2-)={K(C18H36N2O6)}2(Cl2Sn(Cr(CO)5)2)

2K(1+)*2C18H36N2O6*Cl2Sn(Cr(CO)5)2(2-)={K(C18H36N2O6)}2(Cl2Sn(Cr(CO)5)2)

C

2K(1+)*2C18H36N2O6*Sn6(Cr(CO)5)6(2-)={K(C18H36N2O6)}2Sn6(Cr(CO)5)6

2K(1+)*2C18H36N2O6*Sn6(Cr(CO)5)6(2-)={K(C18H36N2O6)}2Sn6(Cr(CO)5)6

Conditions
ConditionsYield
With KC8 In tetrahydrofuran add. of Cr(CO)6 to a suspension of KC8 under Ar at -70°C, stirring (-70°C, 1 h; 0°C, 2 h), addn. of anhydr. SnCl2 at -70°C, addn. of cryptand after 0.5 h stirring, warming to 0°C; filtn. through Kieselgur, concg. in high-vac., layering (15°C, Et2O, pentane), after 7 days Sn seperates;A n/a
B n/a
C 7%
stannous fluoride

stannous fluoride

chromium
7440-47-3

chromium

A

tin
7440-31-5

tin

B

chromium(III) fluoride
7788-97-8

chromium(III) fluoride

Conditions
ConditionsYield
In melt placing of mixt. of Cr with SnF2 (molar ratio SnF2:Cr=2.05) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.75 h at 230°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 6.8%
B n/a
cassiterite

cassiterite

Conditions
ConditionsYield
In melt in presence of WO3;1.5%
In melt in presence of WO3;1.5%
With anthracite 850-900°C;
stannous fluoride

stannous fluoride

aluminium
7429-90-5

aluminium

A

tin
7440-31-5

tin

B

aluminum(III) fluoride
7784-18-1

aluminum(III) fluoride

Conditions
ConditionsYield
In melt placing of mixt. of Al with SnF2 (molar ratio SnF2:Al=1.65) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.00 h at 250°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 1.5%
B n/a
oxygen
80937-33-3

oxygen

tin(II) oxide

tin(II) oxide

A

tin
7440-31-5

tin

B

tin(IV) oxide

tin(IV) oxide

Conditions
ConditionsYield
SnO was oxidized at 612-1030 K;A 1%
B n/a
methyl bromide
74-83-9

methyl bromide

tetramethylstannane
594-27-4

tetramethylstannane

Conditions
ConditionsYield
With {(C2H5)4N}Br In acetonitrile Electrolysis; Sn-cathode, 50°C;100%
With {(C2H5)4N}Br In acetonitrile Electrolysis; Sn-cathode, 50°C;100%
In water; acetonitrile Electrolysis; Sn-cathode, Pt-anode, 0.25 M Et4NClO4 in MeCN/water=7:1, 25°C, 10mA/cm**(-2); gas chromy.;
nickel
7440-02-0

nickel

sulfur
7704-34-9

sulfur

1,2-diaminopropan
78-90-0, 10424-38-1

1,2-diaminopropan

[Ni(1,2-diaminopropane)3]2Sn2S6*2H2O

[Ni(1,2-diaminopropane)3]2Sn2S6*2H2O

Conditions
ConditionsYield
In further solvent(s) High Pressure; prepd. under solvothermal conditions; reactants weighted in ratio of 1 Ni:1 Sn:3 S, heated in sealed Teflon-lined steel autoclave in pure 1,2-diaminopropane for 7 d at 140°C; elem. anal.;100%
selenium
7782-49-2

selenium

caesium selenide

caesium selenide

phosphorus

phosphorus

P4Se12Sn(4-)*4Cs(1+)

P4Se12Sn(4-)*4Cs(1+)

Conditions
ConditionsYield
at 250 - 650℃; for 20h; Sealed tube;100%
germanium
7440-56-4

germanium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.4Sn0.4Sb0.13Te

Ge0.4Sn0.4Sb0.13Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0286Sn0286In0143Sb0143Te

Ge0286Sn0286In0143Sb0143Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.72Sn0.08In0067Sb0067Te

Ge0.72Sn0.08In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.24Sn0.56In0067Sb0067Te

Ge0.24Sn0.56In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.08Sn0.72In0067Sb0067Te

Ge0.08Sn0.72In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.4Sn0.4In0067Sb0067Te

Ge0.4Sn0.4In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.35Sn0.35In0.1Sb0.1Te

Ge0.35Sn0.35In0.1Sb0.1Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.5Sn0.5InSbTe4

Ge0.5Sn0.5InSbTe4

Conditions
ConditionsYield
at 550 - 950℃; for 240h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

GeSnInSbTe5

GeSnInSbTe5

Conditions
ConditionsYield
at 350 - 950℃; for 240h; Inert atmosphere;100%
antimony
7440-36-0

antimony

tellurium

tellurium

Sn0.8Sb0.13Te

Sn0.8Sb0.13Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Sn0.8In0067Sb0067Te

Sn0.8In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

tellurium

tellurium

Ge0.4Sn0.4In0.13Te

Ge0.4Sn0.4In0.13Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
bismuth
7440-69-9

bismuth

lithium sulfide

lithium sulfide

sulfur
7704-34-9

sulfur

Li0.97Sn2.06Bi4.97S10

Li0.97Sn2.06Bi4.97S10

Conditions
ConditionsYield
Stage #1: bismuth; tin; lithium sulfide; sulfur at 800℃; under 0.00150015 Torr; for 10h; Inert atmosphere; Glovebox; Sealed tube;
Stage #2: at 800℃; for 26h;
100%
1-methyl-3-octylimidazolium tribromide
1337952-48-3

1-methyl-3-octylimidazolium tribromide

1-methyl-3-octylimidazolium tribromidostannate(II)

1-methyl-3-octylimidazolium tribromidostannate(II)

Conditions
ConditionsYield
at 125℃; for 72h; Schlenk technique;100%
n-Butyl chloride
109-69-3

n-Butyl chloride

A

dibutyltin chloride
683-18-1

dibutyltin chloride

B

tributyltin chloride
1461-22-9

tributyltin chloride

Conditions
ConditionsYield
With catalyst: dicyclohexyl-18-crown-6/n-C4H9I In N,N-dimethyl-formamide 120°C; 24 h; excess KI;; analyzed by GLC;;A 99%
B 1%
With catalyst: dibenzo-18-crown-6/n-C4H9I In N,N-dimethyl-formamide 120°C; 24 h; excess KI;; analyzed by GLC;;A 98%
B 2%
With catalyst: dibenzo-18-crown-6/n-C8H17I In N,N-dimethyl-formamide 120°C; 24 h; excess KI;; analyzed by GLC;;A 98%
B 2%
iodine
7553-56-2

iodine

tin(II) iodide

tin(II) iodide

Conditions
ConditionsYield
With hydrogenchloride In water at 170℃; Inert atmosphere;99%
1260°C;
I2 in H2 stream;
trifluorormethanesulfonic acid
1493-13-6

trifluorormethanesulfonic acid

dimethyl sulfoxide
67-68-5

dimethyl sulfoxide

tin(IV) triflate - dimethylsulfoxide (1/6.1)

tin(IV) triflate - dimethylsulfoxide (1/6.1)

Conditions
ConditionsYield
With oxygen In dimethyl sulfoxide metal. Sn under O2 atm. treated with DMSO and triflic acid (4 equiv.) in3 portions, heated at 100°C for 24 h;99%
bis(trifluoromethanesulfonyl)amide
82113-65-3

bis(trifluoromethanesulfonyl)amide

dimethyl sulfoxide
67-68-5

dimethyl sulfoxide

tin(IV) triflimidate - dimethylsulfoxide (1/7.9)

tin(IV) triflimidate - dimethylsulfoxide (1/7.9)

Conditions
ConditionsYield
With oxygen In dimethyl sulfoxide metal. Sn under O2 atm. treated with DMSO and triflimidic acid (4 equiv.) in 3 portions, heated at 100°C for 7 h;99%
selenium
7782-49-2

selenium

barium
7440-39-3

barium

Ba2SnSe5

Ba2SnSe5

Conditions
ConditionsYield
In neat (no solvent) mixt. of Ba, Sn, Se in stoich. ratio 2:1:5 was placed into fused silica tube; sealed under vac.; put into furnace; heated to 750°C within3 ds; kept at 750°C for 4 ds; cooled to 700°C within 10 m in; annealed at 650°C for 4 ds; cooled to room temp. within 4 ds;99%
Stage #1: selenium; tin; barium at 750℃; for 150h; Sealed tube;
Stage #2: at 650℃; for 100h;
samarium
7440-19-9

samarium

nickel
7440-02-0

nickel

Sm2NiSn4

Sm2NiSn4

Conditions
ConditionsYield
In neat (no solvent, solid phase) mixt. of Sm, Ni, Sn loaded into Ta tube, heated at 970°C for 36 h, quenched in water, annealed at 700°C for 15 d;99%
In neat (no solvent, solid phase) mixt. of Sm, Ni, Sn loaded into Nb tube, heated under dynamic vac. at 300°C for 1 d, heated at 950°C for 5 d, cooled to room temp.at 15°C/h;
o-tetrachloroquinone
2435-53-2

o-tetrachloroquinone

tetraethylammonium bromide
71-91-0

tetraethylammonium bromide

N(C2H5)4(1+)*SnBr(O2C6Cl4)2(1-)={(C2H5)4N}{SnBr(O2C6Cl4)2}

N(C2H5)4(1+)*SnBr(O2C6Cl4)2(1-)={(C2H5)4N}{SnBr(O2C6Cl4)2}

Conditions
ConditionsYield
In toluene; acetonitrile under dry N2, finely divided metal and o-quinone refluxed in toluene (24 h), filtration, addn. of Et4NBr in minimum amount of CH3CN (light-brown solid deposit), stirred (2 h, room temp.), addn. of diethyl ether, pptn.; filtration, evapn.; elem. anal.;99%
o-tetrachloroquinone
2435-53-2

o-tetrachloroquinone

tetraphenyl phosphonium chloride
2001-45-8

tetraphenyl phosphonium chloride

P(C6H5)4(1+)*SnCl(O2C6Cl4)2(1-)={P(C6H5)4}{SnCl(O2C6Cl4)2}

P(C6H5)4(1+)*SnCl(O2C6Cl4)2(1-)={P(C6H5)4}{SnCl(O2C6Cl4)2}

Conditions
ConditionsYield
In toluene; acetonitrile under dry N2, finely divided metal and o-quinone refluxed in toluene (24 h), filtration, addn. of Ph4PCl in minimum amount of CH3CN (light-brown solid deposit), stirred (2 h, room temp.), addn. of diethyl ether, pptn.; filtration, evapn.; elem. anal.;99%
2-methoxy-ethanol
109-86-4

2-methoxy-ethanol

Sn(2+)*2OC2H4OCH3(1-)=Sn(OC2H4OCH3)2

Sn(2+)*2OC2H4OCH3(1-)=Sn(OC2H4OCH3)2

Conditions
ConditionsYield
With lithium chloride In further solvent(s) Electrolysis; (N2 or Ar); using of Sn as anode and stainless steel plate as cathode; electrolysis for 1-1.5 h with soln. of electrolyte LiCl in MeOCH2CH2OH; removal of methyl cellosolve in vac., sepn. from LiCl by extn. with toluene; distn. in vac.; elem. anal.;99%
Electrochem. Process; Dissolution of Sn anode at 110-220 V and 0.2-0.5 A.; Elem. anal.;
selenium
7782-49-2

selenium

caesium selenide

caesium selenide

arsenic trisulfide

arsenic trisulfide

2Cs(1+)*SnAs2Se9(2-)=Cs2SnAs2Se9

2Cs(1+)*SnAs2Se9(2-)=Cs2SnAs2Se9

Conditions
ConditionsYield
In neat (no solvent) mixt. Cs2Se, Sn, As2S3, and Se was heated at 500°C for 4 days andthen cooled to 250°C at rate 5°C/h followeed by rapid coo ling to room temp.; products were washed with DMF and ether;99%
In neat (no solvent) mixt. Cs2Se, Sn, As2S3, and Se was heated at 550°C for 4 days andthen cooled to 250°C at rate 5°C/h followeed by rapid coo ling to room temp.; products were washed with DMF and ether;
Conditions
ConditionsYield
at 399.84 - 699.84℃; for 408h; Sealed tube;98%
In melt sealed in evacuated quartz ampoule; placed in vertical furnace; heated to 1150°C at 40°C/h; kept for 24 h, cooled at 10°C/hto 800°C, at 1°C/h to 640°C, to 500°C at 5. degree.C/h, annealed for 120 h;
In neat (no solvent) vac; 1350 K;
iodine
7553-56-2

iodine

2-Aminophenyl disulfide
1141-88-4

2-Aminophenyl disulfide

Sn(SC6H4NH2-o)3I
369361-53-5

Sn(SC6H4NH2-o)3I

Conditions
ConditionsYield
In toluene 1.5 equiv. of disulfide, 0.5 equiv. of I2 and Sn metal were refluxed in toluene for 4 h; mixt. was filtered through Celite, soln. was concd. in vac., cooled in ice-bath, solid was filtered off, washed with petroleum ether (60-80 °C), dried in vac., elem. anal.;98%

Tin Consensus Reports

Reported in EPA TSCA Inventory.

Tin Standards and Recommendations

OSHA PEL: Organic Compounds: TWA 0.1 mg(Sn)/m3 (skin); Inorganic Compounds (except oxides): TWA 2 mg/m3
ACGIH TLV: TWA metal, oxide, and inorganic compounds (except SnH4) as Sn 2 mg/m3; organic compounds TWA 0.1 mg(Sn)/m3; STEL 0.2 mg(Sn)/m3 (skin)
DFG MAK: Inorganic 2 mg/m3, organic 0.1 mg/m3
NIOSH REL: (Organotin Compounds) TWA 0.1 mg(Sn)/m3

Tin Analytical Methods

For occupational chemical analysis use OSHA: #ID-125G or NIOSH: Elements (ICP) 7300; METALS in Urine (ICP) 8310.

Tin Specification

The Tin, with the cas registry number 7440-31-5, is a kind of malleable, ductile, and highly crystalline silvery-white metal. This is sensitive and soluble in concentrated hydrochloric [chlorhydric] acid, sulfuric acid, aqua regia, concentrated nitric acid while is slow-soluble in cold diluted hydrochloric acid, diluted hydrochloric acid and hot dilute sulphuric acid.

Following are the basic information of this chemical: It is stable in air but is incompatible with strong oxidizing agents. What's more, its product categories are including Inorganics; Catalysis and Inorganic Chemistry; Chemical Synthesis; TinMetal and Ceramic Science; Metal and Ceramic Science; Metals; Tin; ACS GradeChemical Synthesis; Essential Chemicals; Routine Reagents; 50: Sn; TinNanomaterials; Materials Science; Nanomaterials; Nanoparticles: Metals and Metal AlloysMetal and Ceramic Science; Nanopowders and Nanoparticle Dispersions; AA Standard SolutionsSpectroscopy; AAS.

The characteristics of this chemical are as below: (1)#H bond acceptors: 0; (2)#H bond donors: 0; (3)Exact Mass: 119.902197; (4)MonoIsotopic Mass: 119.902197; (5)Topological Polar Surface Area: 0; (6)Heavy Atom Count: 1; (7)Covalently-Bonded Unit Count: 1.

The production method is as below: Firstly prepare the material of stannic chloride, and then hydrolyze to stannichydroxide after the vacuum distillation; Secondly, access the air to restore and then to get the high purified tin products. The reaction equation is below: Sn(OH)2+H2→Sn+2H2O.

As to its usage, it is widely applied in many ways. It could be used as high purity reagent in electronic industry, and as the reagent to test arsenic (As) and the phosphate, and then as the organic synthesis; Then it could also be usd in producing electrical carbon product, friction material, oil bearing and powder metallurgy material of construction; Lastly, it could be very useful in reducing agent.

When you are using this chemical, please be very cautious, and then take some measure to protect yourself. This is irritating to eyes, respiratory system and skin and then it is flammable. Therefore, you should take the following instructions. Wear suitable protective clothing, gloves and eye/face protection and avoid contacting with skin and eyes. If in case of contacting with eyes, rinse immediately with plenty of water and seek medical advice. Besides, take precautionary measures against static discharges and do not breathe dust while using. When to keep, keep this chemical away from sources of ignition.

Additionally, you could convert the following datas into the molecular structure:
(1)SMILES:[Sn]
(2)InChI:InChI=1/Sn
(3)InChIKey:ATJFFYVFTNAWJD-UHFFFAOYAJ

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